Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
05/2012
05/15/2012US8179709 Semiconductor device including antifuse element
05/15/2012US8179708 Anti-cross-talk circuitry for ROM arrays
05/10/2012WO2012061664A1 Integrated circuit chip customization using backside access
05/09/2012EP2449591A1 Cross point non-volatile memory devices with a plurality of pillars having rounded corners and method of manufacturing
05/09/2012CN102449703A Switchable electronic device and method of switching said device
05/08/2012US8174922 Anti-fuse memory cell and semiconductor memory device
05/08/2012US8174913 Semiconductor memory device and driving method of the same
05/08/2012US8174863 Circuits and methods for multiple programmable memory using one-time programmable memory
05/08/2012US8174862 Fuse circuit and redundancy circuit
05/03/2012US20120106279 Semiconductor memory apparatus, memory system, and programming method thereof
05/03/2012US20120106253 Three-dimensional memory device incorporating segmented array line memory array
05/03/2012US20120106231 Low-pin-count non-volatile memory interface
05/02/2012CN101976579B Memory bitcell
04/2012
04/26/2012US20120099361 Semiconductor capacitor, one time programmable memory cell and fabricating method and operating method thereof
04/25/2012EP2444972A1 Semiconductor device
04/24/2012US8165818 Method and apparatus for searching molecular structure databases
04/24/2012US8164935 Memory modules and methods for modifying memory subsystem performance
04/19/2012US20120092947 Fuse circuit and memory device including the same
04/19/2012US20120092917 Rom memory device
04/19/2012US20120092916 Built-In Self Test for One-Time-Programmable Memory
04/19/2012DE102006051290B4 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
04/18/2012EP2206151B1 Method for integrating nvm circuitry with logic circuitry
04/18/2012CN101253573B 随机存取e-fuse rom Random access e-fuse rom
04/17/2012US8159894 One time programmable memory
04/12/2012US20120087170 Single Polysilicon Non-Volatile Memory
04/11/2012EP2439746A1 Single polysilicon non-volatile memory
04/10/2012US8154941 Non-volatile semiconductor memory device and method of writing data therein
04/10/2012US8154902 Bit line decoder architecture for NOR-type memory array
04/05/2012US20120081942 Test cells for an unprogrammed otp memory array
04/04/2012CN102403041A Data programming circuit and method for OTP memory
04/03/2012US8150631 Method, apparatus and system for quantifying the content of genetically modified material in a sample
04/03/2012US8149607 Rewritable memory device with multi-level, write-once memory cells
03/2012
03/28/2012EP2434544A1 Integrated circuit
03/28/2012CN101488368B Memory
03/22/2012WO2012012711A4 Apparatus and method for testing one-time-programmable memory
03/22/2012US20120069690 Semiconductor integrated circuit and control method
03/22/2012US20120069629 Semiconductor memory device
03/22/2012US20120069621 Integrated Circuits Using Non Volatile Resistivity Sensitive Memory For Emulation Of Embedded Flash Memory
03/21/2012CN102385932A One-time programmable memor, electric system, electric fuse memory and method
03/21/2012CN102385931A Semiconductor memory device and operating method thereof
03/21/2012CN101548376B One-time-programmable logic bit with multiple logic elements
03/20/2012US8139392 Nonvolatile semiconductor memory device and writing method of the same
03/15/2012US20120063191 Performing Data Operations Using Non Volatile Third Dimension Memory
03/14/2012CN101553878B Magnetic tunnel junction antifuse circuit including reference magnetic tunnel junctions coupled in parallel for providing optimal reference impedance
03/14/2012CN101506901B Circuit configurations and methods for manufacturing five-volt one time programmable (otp) memory arrays
03/13/2012US8134882 Semiconductor device including an anti-fuse element
03/13/2012US8134854 Efuse device
03/08/2012US20120057423 Electrical fuse memory arrays
03/06/2012US8130565 Semiconductor device
03/06/2012US8130532 High speed OTP sensing scheme
03/01/2012US20120051163 Semiconductor memory device and operating method thereof
03/01/2012US20120051154 Fuse circuit, fuse array, semiconductor memory device and method of manufacturing semiconductor device
02/2012
02/29/2012CN202153440U 用于校准模拟集成电路的装置 Means for calibrating analog integrated circuits
02/28/2012US8125815 Transistor bit cell ROM architecture
02/28/2012US8125039 One-time programmable, non-volatile field effect devices and methods of making same
02/28/2012US8125003 High-performance one-transistor memory cell
02/23/2012US20120044741 Semiconductor device having memory unit, method of writing to or reading from memory unit, and semiconductor device manufacturing method
02/23/2012US20120044740 One-time programmable memories using junction diodes as program selectors
02/23/2012US20120044739 Circuit and system of using junction diode as program selector for one-time programmable devices
02/23/2012US20120044738 One-time programmable memories using polysilicon diodes as program selectors
02/23/2012US20120044737 Circuit and system of using polysilicon diode as program selector for one-time programmable devices
02/22/2012EP2421003A2 Antifuse circuit
02/21/2012US8122304 JTAG controlled self-repair after packaging
02/21/2012US8120982 Semiconductor device, control method for semiconductor device, and electronic device
02/21/2012US8120981 Semiconductor integrated circuit device with fuse elements and control method therefore
02/21/2012US8120939 ROM cell having an isolation transistor formed between first and second pass transistors and connected between a differential bitline pair
02/16/2012US20120039140 Fuse circuit and semiconductor memory device including the same
02/16/2012US20120039108 One-Time Programmable Memory Cell
02/16/2012US20120039107 Circuit and System of Aggregated Area Anti-Fuse in CMOS Processes
02/16/2012US20120039106 Programmable Memory Cell with Shiftable Threshold Voltage Transistor
02/16/2012US20120039105 Semiconductor device
02/14/2012US8116163 Semiconductor memory device
02/14/2012US8116152 Nonvolatile semiconductor memory device capable of preventing write-disturb and method of programming
02/14/2012US8116116 Resistance RAM having oxide layer and solid electrolyte layer, and method for operating the same
02/14/2012US8114719 Memory device and manufacturing method of the same
02/09/2012WO2012018918A2 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
02/09/2012CA2807392A1 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
02/08/2012CN102347080A 存储元件以及内存结构 Storage element and a memory structure
02/07/2012US8112681 Method and apparatus for handling fuse data for repairing faulty elements within an IC
02/07/2012US8110775 Systems and methods for distinguishing reflections of multiple laser beams for calibration for semiconductor structure processing
02/02/2012WO2011136948A3 Circuit for verifying the write enable of a one time programmable memory
02/02/2012US20120026822 Semiconductor device and method of driving the same
02/02/2012US20120026775 Method of operating semiconductor memory device
02/01/2012CN102339949A High-reliability one-time programmable (OTP) memory unit, memory and manufacturing method thereof
02/01/2012CN102339645A Electrical fuse memory
02/01/2012CN101375345B 电性可编程熔丝位 Electrically programmable fuses
01/2012
01/26/2012WO2012012720A1 Built-in self test for one-time-programmable memory
01/26/2012WO2012012711A1 Apparatus and method for testing one-time-programmable memory
01/26/2012US20120020177 Electrical fuse memory
01/26/2012US20120020139 Apparatus and Method for Testing One-Time-Programmable Memory
01/25/2012EP1889262B1 Anti-fuse memory device
01/25/2012CN102332454A One-time programmable memory cell, memory and preparation method thereof
01/24/2012US8101938 Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method
01/19/2012WO2012006868A1 One-time programmable memory cell, memory, and manufacturing method thereof
01/19/2012US20120014200 Multi-Time Programmable Memory
01/19/2012US20120014158 Memory devices
01/18/2012EP2408001A2 Memory element comprising a fuse in parallel with an anti-fuse
01/18/2012CN102324428A One time programmable storage unit and manufacturing method thereof as well as one time programmable storage array
01/18/2012CN102324252A Method and apparatus for programming an anti-fuse element in a high-voltage integrated circuit
01/18/2012CN101546605B Improved three-dimensional masking film program read-only memory
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