Patents
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
01/2012
01/12/2012US20120008448 Anti-fuse circuit and semiconductor integrated circuit including the same
01/12/2012US20120008364 One time programmable memory and the manufacturing method and operation method thereof
01/12/2012US20120008363 Diode-Less Array for One-Time Programmable Memory
01/10/2012US8094510 Memory array incorporating noise detection line
01/05/2012WO2012003165A1 Non-volatile memory with split write and read bitlines
01/05/2012US20120001296 P-i-n diode crystallized adjacent to a silicide in series with a dielectric material
01/05/2012CA2802737A1 Non-volatile memory with split write and read bitlines
01/04/2012CN102308338A High reliability OTP memory
01/04/2012CN101377959B Selection method and device for restoring redundant bit line
01/03/2012US8089821 Memory device using antifuses
01/03/2012US8089798 Method for operating one-time programmable read-only memory
12/2011
12/29/2011US20110318911 Nonvolatile memory cell comprising a reduced height vertical diode
12/29/2011US20110317468 Non-Volatile Memory with Split Write and Read Bitlines
12/29/2011US20110317467 Semiconductor device and method of manufacturing the same
12/28/2011CN102298960A 具有可编程保险丝的集成电路及其保护方法 IC with programmable fuse and protection methods
12/28/2011CN101752382B 一次性可编程存储器、制造及编程读取方法 One-time programmable memory, manufacturing and programming method of reading
12/27/2011US8085571 High density prom
12/27/2011US8085570 Memory
12/21/2011EP2397976A2 Semiconductor storage device and storage system
12/21/2011CN102292777A 减少存储器装置中的泄漏电流 Reducing the leakage current in the memory device
12/21/2011CN101515478B 改进的三维只读存储器 Improved 3D read-only memory
12/21/2011CN101154466B 用于探测三种状态的一次可编程存储器件及其制造方法 A programmable memory device and manufacturing method for detecting the three states
12/15/2011WO2011153669A1 Low voltage and low power memory cell
12/14/2011CN101361139B 一次可编程存储器及其操作方法 A programmable memory and operating method
12/07/2011EP2392011A1 Reducing leakage current in a memory device
12/06/2011US8072832 Electronic equipment system and semiconductor integrated circuit controller
12/06/2011US8072831 Fuse element reading circuit
12/01/2011US20110292752 Semiconductor memory device having fuse elements programmed by irradiation with laser beam
12/01/2011US20110292711 Data encoding scheme to reduce sense current
12/01/2011US20110292710 Semiconductor device and control method therefor
12/01/2011DE102004047638B4 Nichtflüchtige Speicherzelle A non-volatile memory cell
11/2011
11/30/2011CN102262904A 多位元三维掩膜编程存储器 More than three-dimensional mask-programmable memory element
11/30/2011CN101620889B 熔丝感应电路 Fuse sensing circuit
11/30/2011CN101556825B 一种集成电路 An integrated circuit
11/29/2011US8068996 Electronic hybridization assay and sequence analysis
11/22/2011US8064239 Memory circuit with quantum well-type carrier storage
11/17/2011US20110280091 Memory repair systems and methods for a memory having redundant memory
11/16/2011EP1800323B1 LOW VOLTAGE PROGRAMMABLE eFUSE WITH DIFFERENTIAL SENSING SCHEME
11/16/2011CN1652151B Semiconductor device
11/15/2011US8059444 Large array of upward pointing P-I-N diodes having large and uniform current
11/15/2011US8056818 Integrated circuits with persistent data storage
11/10/2011US20110273950 Method and apparatus for programming an anti-fuse element in a high-voltage integrated circuit
11/10/2011US20110273949 Electrical fuse programming time control scheme
11/10/2011US20110273919 Read-Only Memory (ROM) Bitcell, Array, and Architecture
11/09/2011CN1797605B 半导体器件 Semiconductor devices
11/09/2011CN102237141A Method and apparatus for reading a programmable anti-fuse element in a high-voltage integrated circuit
11/09/2011CN102237140A Fuse programming circuit and fuse programming method
11/09/2011CN101364439B Flash memory device and method of operating the same
11/09/2011CN101313365B Semiconductor device and its operating method
11/08/2011US8054668 Method and apparatus for storing data in a write-once non-volatile memory
11/08/2011US8054667 Multilevel one-time programmable memory device
11/03/2011WO2011136948A2 Circuit for verifying the write enable of a one time programmable memory
11/03/2011US20110267869 Circuit for verifying the write enable of a one time programmable memory
11/01/2011US8050872 System and method for rapid searching of highly similar protein-coding sequences using bipartite graph matching
11/01/2011US8050077 Semiconductor device with transistor-based fuses and related programming method
11/01/2011US8050076 One-time programmable memory cell with shiftable threshold voltage transistor
11/01/2011US8050075 Memory
11/01/2011US8049135 Systems and methods for alignment of laser beam(s) for semiconductor link processing
10/2011
10/26/2011EP2381476A2 Semiconductor device
10/26/2011CN202018827U Antifuse memory unit suitable for memorizer
10/26/2011CN202018826U Antifuse unit structure adopting gate oxide breakdown manner
10/25/2011US8045415 Memory devices having programmable elements with accurate operating parameters stored thereon
10/25/2011US8045414 Non-volatile semiconductor memory device
10/20/2011US20110255327 Method and system for split threshold voltage programmable bitcells
10/19/2011EP2286450B1 Read-only memory with eeprom structure
10/19/2011EP1880420B1 Two-terminal nanotube devices and systems and methods of making same
10/13/2011WO2011125455A1 Oxide semiconductor memory device
10/13/2011US20110249502 Semiconductor device
10/13/2011US20110248089 Paper money, coin, valuable instrument, certificates, tag, label, card, packing containers, documents, respectively installed with integrated circuit
10/12/2011CN102214485A Read-only memory and operating method thereof
10/05/2011CN102208211A Semiconductor apparatus
10/04/2011US8031506 One-time programmable memory cell
09/2011
09/29/2011WO2011118351A1 Semiconductor device
09/29/2011US20110235453 Fuse circuit and repair control circuit using the same
09/29/2011US20110235452 Semiconductor memory device and method for operating the same
09/29/2011US20110235389 Semiconductor device
09/29/2011US20110235388 Nonvolatile semiconductor storage device
09/29/2011US20110235387 Semiconductor memory device
09/28/2011CN201994076U 一种otp eprom读取电路 One kind otp eprom read circuit
09/28/2011CN101447214B Multichip package
09/20/2011US8023354 Semiconductor memory device including a fuse set and a current controlling unit
09/20/2011US8023308 Non-volatile memory circuit using ferroelectric capacitor storage element
09/15/2011US20110222330 Nonvolatile memory device comprising one-time-programmable lock bit register
09/15/2011US20110220725 Semiconductor device
09/14/2011EP2365488A1 Apparatus and method for testing semiconductor integrated circuits, and a non-transitory computer-readable medium having a semiconductor integrated circuit testing program
09/14/2011EP2118904B1 Electronic fuse apparatus and methodology including addressable virtual electronic fuses
09/13/2011US8018754 Non-volatile memory circuit using ferroelectric capacitor storage element
09/13/2011US8018025 Nonvolatile memory cell comprising a reduced height vertical diode
09/13/2011US8018024 P-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse
09/08/2011US20110216572 Electrically programmable fuse bit
09/07/2011CN102176456A Two-terminal nanotube devices and systems and methods of making same
09/07/2011CN101427322B Method for programming an electronic circuit and electronic circuit
09/06/2011US8014223 Semiconductor device
09/06/2011US8014185 Multiple series passive element matrix cell for three-dimensional arrays
09/01/2011US20110211382 High density and low variability read only memory
08/2011
08/31/2011CN102169726A Universal byte circuit applied to FPGAs (Field Programmable Gate Arrays) and programming method
08/30/2011US8009457 Write current compensation using word line boosting circuitry
08/30/2011US8008700 Non-volatile memory cell with embedded antifuse
08/25/2011US20110209011 Method for error test, recordation and repair
08/25/2011US20110205778 Current detection circuit for detecting read current from a memory cell
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