Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
07/1984
07/18/1984EP0113518A2 Bubbler cylinder and dip tube device
06/1984
06/27/1984EP0111510A1 Low temperature process for depositing epitaxial layers.
06/19/1984US4454835 Apparatus for growing epitaxial layers by proteolysis
05/1984
05/29/1984US4451499 From oxygen and beryllium ionized vapors
05/29/1984US4451391 Germanium
05/15/1984US4449037 Method and apparatus for heating semiconductor wafers
05/15/1984US4448797 Masking techniques in chemical vapor deposition
05/08/1984US4447904 Semiconductor devices with nonplanar characteristics produced in chemical vapor deposition
05/08/1984US4447497 Heat treatment, deoxygenation of substrate surface, lowering temperature, and vapor deposition of semiconductor
05/08/1984US4446817 Apparatus for vapor deposition of a film on a substrate
05/08/1984CA1166937A1 Method and apparatus for performing growth of compound thin films
05/02/1984EP0107344A1 Susceptor for radiant absorption heater system
05/02/1984EP0036859B1 Boat for wafer processing
05/01/1984US4445965 Method for making thin film cadmium telluride and related semiconductors for solar cells
04/1984
04/24/1984US4445129 Semiconductor device with a gray tin layer and a method of making the same
04/24/1984US4444812 Combination gas curtains for continuous chemical vapor deposition production of silicon bodies
04/17/1984US4443488 Semiconductors, multistage, thin films, extraction, coalescing
04/17/1984US4443410 Integrated circuits, thin films, cassettes
04/04/1984EP0104405A1 Silicon carbide materials
03/1984
03/27/1984US4439267 Vapor-phase method for growing mercury cadmium telluride
03/21/1984EP0103470A1 Titanium disulfide thin film and process for fabricating the same
03/13/1984US4436769 Metal organic vapor deposition procedure for preparing group III--V compounds on a heated substrate
03/13/1984US4436674 Vapor mass flow control system
03/13/1984CA1163538A1 Holder for liquid phase epitaxial growth
03/06/1984US4434742 Installation for depositing thin layers in the reactive vapor phase
02/1984
02/14/1984US4431475 Process for making doped semiconductors
02/14/1984US4430959 Semiconductor vapor phase growing apparatus
02/07/1984US4430149 Chemical vapor deposition of epitaxial silicon
02/02/1984WO1984000353A1 Ultra-pure epitaxial silicon
01/1984
01/19/1984WO1984000178A1 Low temperature process for depositing epitaxial layers
01/03/1984US4424193 Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members
01/03/1984CA1159629A1 Method for producing pre-shaped alpha-silicon nitride whisker compacts and loose whiskers for composite material reinforcement
12/1983
12/27/1983US4422888 Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition
12/20/1983US4421786 Chemical vapor deposition reactor for silicon epitaxial processes
12/20/1983US4421592 Without contamination by alkali halide substrate
12/06/1983US4419332 Semiconductors, heating pipe
12/06/1983US4419179 Method of vapor phase growth
12/06/1983US4419178 Endless belts, monocrystals
12/06/1983CA1158109A1 Coating of semiconductor wafers and apparatus therefor
11/1983
11/01/1983US4413022 Vapor reactions
10/1983
10/26/1983EP0092435A1 A method of, and a susceptor for use in, vapour deposition of films
10/25/1983US4411729 Positioning of crystalline substrate and dummy substrate in gas flow to control doping and growth
10/12/1983EP0090817A1 Thin films of compounds and alloy compounds of group iii and group v elements.
09/1983
09/06/1983US4402771 Substrate for silicon solar cells
08/1983
08/30/1983US4401687 Plasma deposition of silicon
08/30/1983US4401507 Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
08/30/1983US4401506 Process for producing semiconductor device
08/10/1983EP0085397A2 Semiconductor vapor phase growing apparatus
08/09/1983US4397897 Bell of translucent fused silica for the precipitation of polysilicon
07/1983
07/19/1983US4394401 Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film
07/12/1983US4393013 Vapor mass flow control system
07/12/1983US4392453 Molecular beam converters for vacuum coating systems
06/1983
06/28/1983US4389973 Apparatus for performing growth of compound thin films
06/23/1983WO1983002108A1 Continuous silicon carbide whisker production
06/21/1983US4389273 Vapor deposition, heat treatment
06/14/1983US4388342 Method for chemical vapor deposition
06/14/1983US4388255 Method for producing pre-shaped α-silicon nitride whisker compacts and loose whiskers for composite material reinforcement
05/1983
05/31/1983US4386255 Susceptor for rotary disc reactor
05/10/1983US4382837 Single crystals by heating in the presence of flowing nitrogen and hydrogen gases; solid solutions; process control; semiconductors
05/10/1983US4382776 Quartz tube for thermal processing of semiconductor substrates
04/1983
04/28/1983WO1983001466A1 Thin films of compounds and alloy compounds of group iii and group v elements
04/27/1983EP0077408A1 A method and apparatus for the heat treatment of semiconductor articles
04/19/1983CA1145065A1 Semiconductor device made by epitaxial growth
04/06/1983EP0075889A2 Process for making thin silicon films
03/1983
03/22/1983US4377564 Plasma in a gas flow where silicon compound reacts
03/22/1983CA1143259A1 Method of cleaning a reactor
03/15/1983CA1143074A1 Boat for wafer processing
02/1983
02/16/1983EP0072226A1 Vapor phase deposition of semiconductor material
01/1983
01/25/1983US4370288 On a layer of graphite applied to substrate from a colloidal suspension
01/12/1983EP0069206A1 Single crystals of xSiC.(1-x)AlN
01/11/1983US4368098 Epitaxial composite and method of making
01/11/1983US4368072 Iodide cell vapor pressure control
01/11/1983US4367768 Refractory protective tube for the heat treatment of semiconductor components
01/11/1983CA1139453A1 Improving graphoepitaxy
01/05/1983EP0068839A1 Method and apparatus for vapor phase growth of a semiconductor
12/1982
12/28/1982US4365588 Fixture for VPE reactor
11/1982
11/30/1982CA1136413A1 Carbonaceous material and process for producing a high btu gas from this material
11/16/1982CA1135601A1 Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound
10/1982
10/19/1982US4354455 Apparatus for oscillating a gas manifold in a rotary disc reactor
10/19/1982CA1134059A1 Method of providing an epitaxial layer
10/06/1982EP0061611A1 Method for producing pre-shaped alpha-silicon nitride whisker compacts and loose whiskers for composite material reinforcement
10/05/1982US4352713 Vapor growth method
09/1982
09/14/1982US4348981 Vertical type vapor-phase growth apparatus
08/1982
08/24/1982CA1130474A1 Epitaxial tunnels
08/11/1982EP0057587A2 Semiconductor deposition method
08/10/1982US4343963 Substrate for silicon solar cells
08/05/1982EP0049286A4 Methods of producing sheets of crystalline material and devices amde therefrom.
07/1982
07/27/1982US4341107 Calibratable system for measuring fluid flow
07/21/1982EP0056326A2 Coating of semiconductor wafers and apparatus therefor
07/20/1982US4340568 Blow pipe assembly
07/13/1982US4339300 Process for smoothing surfaces of crystalline materials
06/1982
06/22/1982US4336099 Method for producing gallium arsenide single crystal ribbons
06/15/1982US4335160 Chemical process
06/08/1982US4333989 Sapphire single crystal substrate consisting essentially of Ga2 O.sub.3
06/08/1982US4333792 Enhancing epitaxy and preferred orientation
06/02/1982EP0052979A1 Improvements in the manufacture of group IIIB-VB compounds
05/1982
05/19/1982EP0051677A1 Process and apparatus for chemical vapor deposition of films on silicon wafers
05/18/1982US4330360 Molecular beam deposition technique using gaseous sources of group V elements
05/18/1982US4330182 Method of forming semiconducting materials and barriers
05/04/1982CA1122859A1 Electronic grade aluminum nitride materials