Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
03/1980
03/04/1980CA1073117A1 Process and apparatus for the preparation of semiconductor-grade silicon
02/1980
02/26/1980US4190640 Reaction of nitrogen oxide with bromocarbon
02/26/1980US4190470 Production of epitaxial layers by vapor deposition utilizing dynamically adjusted flow rates and gas phase concentrations
02/05/1980US4186684 Apparatus for vapor deposition of materials
02/05/1980CA1071068A1 Method of manufacturing single crystals by growth from the vapour phase
01/1980
01/09/1980EP0006118A1 Process for vapor-phase growing of gallium arsenide containing a large concentration of germanium
12/1979
12/25/1979US4180618 Thin silicon film electronic device
12/25/1979CA1068582A Continuous chemical vapor deposition reactor
12/18/1979US4179530 Process for the deposition of pure semiconductor material
12/18/1979US4179326 Flowing reaction gas over heated wafer
12/12/1979EP0005744A1 Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration
12/11/1979US4178197 Formation of epitaxial tunnels utilizing oriented growth techniques
12/04/1979US4177321 Reduction of difference in lattice constant
12/04/1979US4177094 Semiconductors
12/04/1979US4177084 Method for producing a low defect layer of silicon-on-sapphire wafer
11/1979
11/28/1979EP0005442A1 Process and apparatus for producing aluminium nitride useful for electronic applications
11/13/1979US4174422 Layer of nickel crystals intermediate between monocrystalline sodium chloride and silver
11/13/1979US4173944 Silverplated vapor deposition chamber
11/13/1979CA1066174A1 Method for producing compound thin films
10/1979
10/30/1979US4172756 Vapor deposition of monocrystalline gallium for semiconductors
10/30/1979US4172754 Reaction of aluminum monoselenide, formed from aluminum and selenium, with nitrogen
10/23/1979US4171996 Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
09/1979
09/25/1979US4168998 Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder
09/11/1979CA1062130A1 Process for producing large-size self-supporting plates of silicon
09/04/1979CA1061795A1 Process for the preparation of chlorosilanes
08/1979
08/08/1979EP0003425A1 A method for forming a crystalline film of a paramagnetic sodium thallium type intermetallic compound and apparatus for performing said method
08/07/1979CA1059880A2 Deposition of solid semiconductor compositions and novel semiconductor materials
06/1979
06/26/1979US4159354 Method for making thin film III-V compound semiconductors for solar cells involving the use of a molten intermediate layer
06/13/1979EP0002383A1 Method and apparatus for depositing semiconductor and other films
06/05/1979CA1055817A1 Reaction vessel for depositing semi-conductor material
05/1979
05/16/1979EP0001942A2 Process for manufacturing silicon for photovoltaic conversion
05/08/1979US4153486 Silicon tetrachloride epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers utilizing a preheating in hydrogen
05/01/1979US4152182 Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
04/1979
04/04/1979EP0001373A1 Method of forming smooth and pinhole-free silicon carbide films on a silicon substrate
04/03/1979US4147571 Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
03/1979
03/27/1979US4146774 Planar reactive evaporation apparatus for the deposition of compound semiconducting films
03/13/1979US4144116 Vapor deposition of single crystal gallium nitride
02/1979
02/27/1979US4141778 Vapor deposition, decomposition
02/20/1979US4140735 Process and apparatus for bubbling gas through a high purity liquid
02/06/1979US4138509 Disproportionation of binary silicon fluoride
02/06/1979US4138306 Apparatus for the treatment of semiconductors
01/1979
01/30/1979US4137108 Process for producing a semiconductor device by vapor growth of single crystal Al2 O3
01/02/1979US4132818 Layers of uniform thickness by varying flow rate and concentration of gases
01/02/1979US4132571 Silicides
12/1978
12/26/1978US4131659 Process for producing large-size, self-supporting plates of silicon
11/1978
11/21/1978US4126731 Sapphire single crystal substrate for semiconductor devices
10/1978
10/31/1978US4123571 Placing silicon substrate in susceptor having tantalum carbide surfaces, heating, cooling, addition of methane
10/10/1978US4119994 Heterojunction and process for fabricating same
10/03/1978US4118539 Super hard-highly pure silicon nitrides having a preferred crystal face orientation
09/1978
09/26/1978US4117504 Heterogeneous semiconductor structure with composition gradient and method for producing same
09/26/1978US4116751 Methods and apparatus for producing unsupported monocrystalline films of silicon and of other materials
09/19/1978US4115625 Sodium thallium type crystal on crystalline layer
09/12/1978US4113547 Formation of epitaxial layers on substrate wafers utilizing an inert heat radiation ring to promote uniform heating
09/12/1978US4113513 Method of manufacturing a semiconductor device by non-selectively implanting a zone of pre-determined low resistivity
08/1978
08/15/1978CA1036470A1 Deposition of solid semiconductor compositions and novel semiconductor materials
07/1978
07/25/1978US4102766 Alkali metal or an alkaline-earth metal reductant, silicon halide, doping agent reacted to produce metal salts and liquid silicon
07/25/1978US4102298 Device for deposition of semi-conductor material
07/18/1978US4100879 Device for epitaxial growing of semiconductor periodic structures from gas phase
05/1978
05/16/1978US4089735 Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors
05/09/1978US4088515 Method of making semiconductor superlattices free of misfit dislocations
04/1978
04/25/1978US4086109 Method for the epitaxial growth of III-V compounds at homogeneous low temperature utilizing a single flat temperature zone
04/04/1978US4082865 Method for chemical vapor deposition
03/1978
03/28/1978US4081313 Process for preparing semiconductor wafers with substantially no crystallographic slip
01/1978
01/03/1978US4066481 Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
12/1977
12/27/1977US4065533 Process for the continuous production of silicon rods or tubes by gaseous deposition into a flexible wound band
12/20/1977US4063974 Planar reactive evaporation method for the deposition of compound semiconducting films
12/20/1977US4063529 Device for epitaxial growing of semiconductor periodic structures from gas phase
12/13/1977US4062706 Process for III-V compound epitaxial crystals utilizing inert carrier gas
12/13/1977US4062318 Apparatus for chemical vapor deposition
11/1977
11/15/1977US4058430 Method for producing compound thin films
11/15/1977US4058418 Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth
10/1977
10/11/1977US4053326 Photovoltaic cell
10/11/1977US4052782 Tubular solar cell and method of making same
09/1977
09/13/1977US4047496 Epitaxial radiation heated reactor
08/1977
08/16/1977US4042447 Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate
07/1977
07/12/1977US4035460 Shaped bodies and production of semiconductor material
07/12/1977US4034705 Shaped bodies and production of semiconductor material
06/1977
06/07/1977US4028149 Process for forming monocrystalline silicon carbide on silicon substrates
05/1977
05/17/1977US4023520 Reaction container for deposition of elemental silicon
04/1977
04/19/1977US4018183 Apparatus for treating a plurality of semiconductor slices to a reacting gas current
03/1977
03/29/1977US4014980 Method for manufacturing graphite whiskers using condensed polycyclic hydrocarbons
03/22/1977US4013503 Filamentary silicon carbide crystals by VLS growth in molten iron
01/1977
01/11/1977US4002725 Process for growing acicula of rare earth pentaphosphates
01/04/1977US4000716 Epitaxial growth device
11/1976
11/23/1976US3993533 Method for making semiconductors for solar cells
09/1976
09/14/1976US3980942 Apparatus for the control of electrical heating of a semiconductor rod
09/14/1976US3980686 Process for the preparation of chlorosilane
09/07/1976US3979271 Deposition of solid semiconductor compositions and novel semiconductor materials
09/07/1976US3979235 Depositing doped material on a substrate
08/1976
08/17/1976US3974561 Method of producing directly heatable hollow semiconductor bodies
06/1976
06/29/1976US3966513 Method of growing by epitaxy from the vapor phase a material on substrate of a material which is not stable in air
06/22/1976US3964430 Semi-conductor manufacturing reactor instrument with improved reactor tube cooling
06/01/1976US3960619 Reduction or thermal decomposition of a silane compound and a hydrocarbon
05/1976
05/11/1976US3956037 Method of forming semiconductor layers by vapor growth
05/11/1976US3956032 Silicon carbide
04/1976
04/27/1976US3953876 Silicon solar cell array
03/1976
03/30/1976US3947562 Production of a form of alumina whiskers
03/23/1976US3945935 Radiation detectors
03/23/1976US3945864 Method of growing thick expitaxial layers of silicon
03/02/1976US3941900 Method for producing highly pure silicon