| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 04/14/1982 | EP0049286A1 Methods of producing sheets of crystalline material and devices amde therefrom. |
| 03/31/1982 | EP0048546A1 Semiconductive grey tin |
| 03/30/1982 | US4322592 Susceptor for heating semiconductor substrates |
| 03/09/1982 | US4318889 Impermeable cooled closing plug for processing tubes, in particular in semiconductor manufacture |
| 02/24/1982 | EP0046355A1 Quartz tube for thermal processing of semiconductor substrates |
| 02/23/1982 | US4316430 Vapor phase deposition apparatus |
| 02/17/1982 | EP0046059A2 Method of plasma enhanced chemical vapour deposition of films |
| 02/16/1982 | CA1118536A1 Epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers |
| 02/10/1982 | EP0045600A1 Improved method for producing semiconductor grade silicon |
| 02/10/1982 | EP0045599A1 Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition |
| 02/09/1982 | US4314873 Method for depositing heteroepitaxially InP on GaAs semi-insulating substrates |
| 02/03/1982 | EP0045192A2 Process and apparatus for preparing bodies of semiconductor material |
| 02/03/1982 | EP0045191A1 Process and apparatus for the production of semiconductor bodies |
| 01/26/1982 | US4312924 Super hard highly pure silicon nitrides |
| 01/26/1982 | US4312923 Super hard-highly pure silicon nitrides, and a process and apparatus for producing the same |
| 01/26/1982 | US4312921 Hexagonal crystal structure, high density, high strength |
| 01/26/1982 | US4312294 Apparatus for thermal treatment of semiconductors |
| 01/19/1982 | US4311545 Method for the deposition of pure semiconductor material |
| 01/12/1982 | US4309961 Apparatus for thermal treatment of semiconductors |
| 01/05/1982 | US4309241 Gas curtain continuous chemical vapor deposition production of semiconductor bodies |
| 01/05/1982 | US4309240 Process for chemical vapor deposition of films on silicon wafers |
| 12/08/1981 | CA1113686A1 Method of manufacturing silicium for photovoltaic conversion |
| 12/02/1981 | EP0040939A1 Manufacture of cadmium mercury telluride |
| 12/02/1981 | EP0040646A1 Cooled closure for reaction tubes, especially in the manufacture of semiconductors |
| 11/26/1981 | WO1981003348A1 Process and apparatus for chemical vapor deposition of films on silicon wafers |
| 11/25/1981 | EP0040540A2 Chemical vapor delivery system and method for controlling the flow of vapor in a chemical vapor delivery system |
| 11/24/1981 | CA1112986A1 Growing epitaxial films when the misfit between film and substrate is large |
| 11/11/1981 | EP0039417A1 Process for producing silicon |
| 11/10/1981 | CA1112375A1 Method of treating a monocrystalline body |
| 10/15/1981 | WO1981002948A1 Methods of producing sheets of crystalline material and devices made therefrom |
| 10/07/1981 | EP0037199A1 Method of vapor phase growth of GaAs |
| 10/06/1981 | US4293755 Method of cooling induction-heated vapor deposition apparatus and cooling apparatus therefor |
| 10/06/1981 | US4293370 Method for the epitaxial growth of boron phosphorous semiconductors |
| 09/29/1981 | US4292374 Sapphire single crystal substrate for semiconductor devices |
| 09/29/1981 | US4292373 Layer having a more homogeneous crystal structure with that of dielectric; stress releiving |
| 09/29/1981 | US4292264 Vapor deposition of silicon on elongated foil substrates; continuous; efficiency |
| 09/23/1981 | EP0036360A1 Process for growing a single crystal in a closed ampoule |
| 09/22/1981 | US4290385 Vertical type vapor-phase growth apparatus |
| 09/22/1981 | CA1109568A1 Process for doping high purity silicon in an arc heater |
| 09/17/1981 | WO1981002590A1 Method for growing a single-crystal in a closed cylindrical housing and product obtained |
| 09/01/1981 | US4286545 Apparatus for vapor depositing a stoichiometric compound |
| 08/18/1981 | US4284867 Chemical vapor deposition reactor with infrared reflector |
| 08/18/1981 | US4284612 Reacting silica with carbonized fibers |
| 08/11/1981 | US4283375 Production of SiC whiskers |
| 08/04/1981 | US4282543 Semiconductor substrate and method for the preparation of the same |
| 08/04/1981 | US4282057 Vapor growth of mercury iodide for use as high energy detectors |
| 07/28/1981 | US4281029 Vaporization and impingement of the gases |
| 07/21/1981 | US4279689 Process for producing super hard-highly pure silicon nitrides |
| 07/21/1981 | US4279688 Method of improving silicon crystal perfection in silicon on sapphire devices |
| 07/21/1981 | US4279669 Semiconductor compounds |
| 07/14/1981 | CA1104909A2 Enhancing epitaxy and preferred orientation |
| 06/24/1981 | EP0030798A1 Low temperature process for depositing oxide layers by photochemical vapor deposition |
| 06/23/1981 | US4275282 Centering support for a rotatable wafer support susceptor |
| 06/02/1981 | CA1102223A1 Enhancing epitaxy and preferred orientation |
| 05/27/1981 | EP0029146A1 Vapor growth method |
| 04/21/1981 | US4263336 Reduced pressure induction heated reactor and method |
| 04/21/1981 | US4263087 Process for producing epitaxial layers |
| 04/21/1981 | US4262630 Method of applying layers of source substance over recipient and device for realizing same |
| 04/08/1981 | EP0026658A1 A vapor phase method of growing a semiconductor compound |
| 04/08/1981 | EP0026604A1 A method of vapour phase growth and apparatus therefor |
| 04/08/1981 | EP0026325A1 A wafer holder for use in growing liquid phase epitaxial films on wafers |
| 03/19/1981 | WO1981000681A1 Boat for wafer processing |
| 03/17/1981 | US4256229 Boat for wafer processing |
| 03/17/1981 | US4256052 Temperature gradient means in reactor tube of vapor deposition apparatus |
| 03/10/1981 | US4255208 Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer |
| 03/03/1981 | US4253887 Method of depositing layers of semi-insulating gallium arsenide |
| 02/24/1981 | US4252576 Epitaxial wafer for use in production of light emitting diode |
| 02/10/1981 | US4250205 Thermal decomposition of a coordination compound |
| 02/10/1981 | US4250148 Apparatus and method for producing polycrystalline ribbon |
| 02/03/1981 | US4248844 Production of SiC from rice hulls and silica |
| 01/27/1981 | US4247359 Preparation of epitaxial rare earth thin films |
| 01/06/1981 | CA1092905A1 Process for the deposition of polycrystalline silicon from the gas phase on heated carriers |
| 12/30/1980 | US4242374 Process for thin film deposition of metal and mixed metal chalcogenides displaying semi-conductor properties |
| 12/16/1980 | US4239819 Partial reduction of volatile halide, deposition as liquid, alloying |
| 12/16/1980 | CA1091817A1 Method for growing semiconductor crystal |
| 12/10/1980 | EP0020134A1 Method of enhancing epitaxy and preferred orientation in films deposited on solid substrates |
| 10/28/1980 | CA1088677A1 Growth of polycrystalline semiconductor film with intermetallic nucleating layer |
| 10/15/1980 | EP0016910A1 Method of forming epitaxial tunnels in crystalline structures |
| 10/14/1980 | CA1087718A1 Method for producing a layer of crystalline silicon |
| 10/07/1980 | US4226897 Method of forming semiconducting materials and barriers |
| 10/01/1980 | EP0016521A2 Process for producing a silicon epitaxial layer |
| 09/30/1980 | US4225367 Production of thin layers of polycrystalline silicon on a liquid layer containing a reducing agent |
| 09/30/1980 | CA1086611A1 Epitaxial growth of iiia-vb compounds at low temperatures |
| 09/30/1980 | CA1086610A1 Accelerated growth from the gaseous phase of gallium arsenide crystals |
| 09/23/1980 | US4224296 Super hard-highly pure silicon nitrides, and a process and apparatus for producing the same |
| 09/17/1980 | EP0015732A1 Silicon solar cells |
| 09/17/1980 | EP0015390A1 Method and apparatus for performing growth of thin films of a compound |
| 09/16/1980 | US4222814 Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound |
| 09/02/1980 | US4220488 Gas-phase process for the production of an epitaxial layer of indum phosphide |
| 09/02/1980 | US4220116 Reactant gas flow structure for a low pressure chemical vapor deposition system |
| 07/29/1980 | US4215154 Thermal decomposition |
| 07/29/1980 | US4214926 Method of doping IIb or VIb group elements into a boron phosphide semiconductor |
| 07/29/1980 | CA1082424A1 Method of preparing crystalline compounds a suiva xx b suvia xx |
| 07/08/1980 | US4211803 CVD Growth of magnetic oxide films having growth induced anisotropy |
| 05/27/1980 | US4204893 Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source |
| 05/20/1980 | US4203799 Method for monitoring thickness of epitaxial growth layer on substrate |
| 05/14/1980 | EP0010952A1 Method and apparatus for heating semiconductor wafers |
| 04/15/1980 | US4197814 Apparatus for forming compound semiconductor thin-films |
| 04/08/1980 | CA1075374A1 Semiconductor isolation method |
| 03/18/1980 | US4193835 Doped with a metallocene impurity |