Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
04/2003
04/03/2003US20030062530 Emitting portion made of a nitride semiconductor, and a light lead-out surface on which an embossment is formed to improve the external quantum efficiency of light emitted from said light emitting portion.
04/03/2003US20030062529 Light emitting element
04/03/2003US20030062526 Substrates having increased thermal conductivity for semiconductor structures
04/03/2003US20030062125 Cationic-polymerizable compound, a photocationic initiator and aromatic ether compound or an aliphatic thioether; liquid crystal or electroluminescent display having excellent adhesive strength and moisture permeation resistance
04/03/2003CA2462175A1 Light emitting diode with integrated heat dissipater
04/02/2003EP1298737A2 Organic light emitting diode having an interface layer between the hole-transporting layer and the light-emitting layer
04/02/2003EP1298734A2 Module for optical communications for converting light to differential signals
04/02/2003EP1298709A2 III-nitride epitaxial substrate, epitaxial substrate for III-nitride element and III-nitride element
04/02/2003EP1298481A2 Night-vision device for vehicles
04/02/2003EP1298461A1 Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR
04/02/2003EP1298382A1 Replaceable LED bulb with interchangeable lens optic
04/02/2003EP1297579A1 Radiation emitting semiconductor chip and a method for the production thereof
04/02/2003EP1297578A1 Luminescent diode
04/02/2003EP1297576A2 Optoelectronic device with integrated wavelength filtering
04/02/2003EP1297572A1 Led lamp
04/02/2003EP0796506B1 Arrays of optoelectronic devices and method of making same
04/02/2003CN2543209Y Lamp bulb
04/02/2003CN1407836A Luminous device
04/02/2003CN1407637A Nitride semiconductor light emission device and its manufacture
04/02/2003CN1407636A Gap semiconductor luminous assembly
04/02/2003CN1407360A Optical connector and element
04/02/2003CN1104729C Signaling device with light emitting diode
04/01/2003US6541800 High power LED
04/01/2003US6541799 High emission intensity pn-heterojunction structure type; reduced in the absorption of emission attributable to a single crystal substrate; group 3 borophosphide intermediate layer
04/01/2003US6541798 Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device
04/01/2003US6541797 Group-III nitride semiconductor light-emitting device
04/01/2003US6541796 Opto-electronic device with self-aligned ohmic contact layer
04/01/2003US6541293 Semiconductor light-emitting device and manufacturing method thereof
04/01/2003US6541291 Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer
03/2003
03/28/2003CA2399348A1 Replaceable led bulb with interchangeable lens optic
03/27/2003WO2003026355A2 Electroluminescent body
03/27/2003WO2003026031A1 Condensing element and forming method therefor and condensing element-carrying led lamp and linear light emitting device using led lamp as light source
03/27/2003WO2003026030A1 White light led with multicolor light-emitting layers of macroscopic structure widths, arranged on a light-diffusing glass
03/27/2003WO2003026029A1 Radiation-emitting semiconductor component and method for making same
03/27/2003WO2003025990A1 Method for cutting sapphire substrate for semiconductor device
03/27/2003WO2003025988A1 Method for the production of iii-v- nitride-conductor-based semiconductor layers
03/27/2003WO2003025985A1 Notched compound semiconductor wafer
03/27/2003WO2003025978A2 Method for separating two joined layers of material
03/27/2003WO2003025263A1 Nitride semiconductor substrate, its manufacturing method, and semiconductor optical device using the same
03/27/2003WO2003001575A3 Preparation of graded semiconductor films by the layer-by-layer assembly of nanoparticles
03/27/2003WO2003000964B1 METHOD FOR PREPARING GaN BASED COMPOUND SEMICONDUCTOR CRYSTAL
03/27/2003US20030059998 Semiconductor devices and methods
03/27/2003US20030059972 Light-emitting device and method for manufacturing the same
03/27/2003US20030059971 Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
03/27/2003US20030059970 Luminous diode based on soluble organic materials
03/27/2003US20030059178 Bidirectional optical transmission device
03/27/2003US20030059174 Optical communication module
03/27/2003US20030058650 Light emitting diode with integrated heat dissipater
03/27/2003US20030058641 Led indicator lamp
03/27/2003US20030058634 Spread illuminating apparatus with plurality of light conductive bars arrayed adjacently
03/27/2003US20030058382 Plane light source apparatus
03/27/2003US20030058329 Optical writing head comprising self-scanning light-emitting element array
03/27/2003US20030057888 Illumination control system
03/27/2003US20030057829 Illumination device with at least one LED as light source
03/27/2003US20030057509 Light-emitting element array
03/27/2003US20030057451 Aggregate of Semicnductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
03/27/2003US20030057444 Semiconductor light emitting device
03/27/2003US20030057434 Semiconductor device having improved buffer layers
03/27/2003US20030057433 Light-emitting semiconductor device using group iii nitride compound
03/27/2003US20030057430 Comprises package including circuit board housing attached to a printed circuit board for supporting diode
03/27/2003US20030057425 Active matrix display device
03/27/2003US20030057421 High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate
03/27/2003US20030056719 Low temperature epitaxial growth of quaternary wide bandgap semiconductors
03/26/2003EP1296383A2 Radiation unit with at least one LED
03/26/2003EP1296376A2 Illumination device with at least one LED as the light source
03/26/2003EP1296363A1 Method of manufacturing group-iii nitride compound semiconductor device
03/26/2003EP1296362A2 Single crystal GaN substrate, method of growing same and method of producing same
03/26/2003EP1296169A2 Bidirectional optical transmission device
03/26/2003EP1296094A1 Plane light source apparatus
03/26/2003EP1295348A1 Led comprising a coupling-out structure
03/26/2003EP1295347A1 A white light emitting phosphor blend for led devices
03/26/2003EP1056993B1 Led luminaire
03/26/2003CN1406450A LED luminaire with electrically adjusted color balance
03/26/2003CN1405903A Single Crystal gallium nitride base board and its growth method and manufacture method
03/26/2003CN1405902A Erbium-doped zinc oxide near-infrared light source
03/26/2003CN1405901A Method for packaging electroluminescence element
03/26/2003CN1405585A Optical communication module for changing optical signals and differential signals
03/26/2003CN1104038C Semiconductor substrate production process
03/25/2003US6538394 Current source methods and apparatus for light emitting diodes
03/25/2003US6538371 System comprising radiation source and luminescent material; emission spectra of radiation source and luminescent material represent first and second points on CIE chromaticity diagram; line connecting points approximates black body locus thereon
03/25/2003US6538265 Indium aluminum nitride based light emitter active layer with indium rich and aluminum rich areas
03/25/2003US6537839 Nitride semiconductor light emitting device and manufacturing method thereof
03/25/2003US6537838 Forming semiconductor structures including activated acceptors in buried p-type III-V layers
03/25/2003US6537513 Depositing such as gallium or aluminum buffer layer at a temperature below crystalization point; lower defects
03/25/2003US6536913 Flat display apparatus
03/20/2003WO2003023857A2 Led-luminous panel and carrier plate
03/20/2003WO2003023838A1 n ELECTRODE FOR III GROUP NITRIDE BASED COMPOUND SEMICONDUCTOR ELEMENT
03/20/2003WO2003023834A2 Method of manufacturing optical devices and related improvements
03/20/2003WO2003023748A2 Illuminated panel comprising led diodes
03/20/2003WO2003022857A1 Rare-earth complex and photofunctional material and luminescent device each employing the same
03/20/2003WO2003003397A3 Electroluminescent panel having controllable transparency
03/20/2003WO2002063348A3 IMPROVED LIGHT EXTRACTION EFFICIENCY OF GaN BASED LEDs
03/20/2003WO2002032022A3 Optical communications apparatus
03/20/2003US20030054581 Method of mounting light emitting element
03/20/2003US20030053789 Tuning a band-gap by intermixing an impurity with one Quantum Well in the at least two areas to different values; copper or a copper alloy impurity; high-speed diffusion; dopes
03/20/2003US20030053559 Frequency offset estimation for communication systems method and device for inter symbol interference
03/20/2003US20030052599 White light LED illumination apparatus
03/20/2003US20030052595 Illumination unit having at least one LED as light source
03/20/2003US20030052594 Lighting apparatus whose light emitting elements are hard to be taken off
03/20/2003US20030052584 Lighting apparatus with enhanced capability of removing heat
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