Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2011
03/17/2011US20110062512 Nonplanar device with thinned lower body portion and method of fabrication
03/17/2011US20110062511 Device having complex oxide nanodots
03/17/2011US20110062510 3d non-volatile memory device and method for fabricating the same
03/17/2011US20110062509 Semiconductor device having upper layer portion of semiconductor substrate divided into a plurality of active areas
03/17/2011US20110062508 Semiconductor device including resistor and method of fabricating the same
03/17/2011US20110062507 Semiconductor device and a method of fabricating the same
03/17/2011US20110062502 Semiconductor device and method for manufacturing the same
03/17/2011US20110062501 Method for self-aligning a stop layer to a replacement gate for self-aligned contact integration
03/17/2011US20110062500 Semiconductor device and fabrication method thereof
03/17/2011US20110062498 Embedded silicon germanium source drain structure with reduced silicide encroachment and contact resistance and enhanced channel mobility
03/17/2011US20110062497 Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure
03/17/2011US20110062496 Methods and Compositions for Preparing Ge/Si Semiconductor Substrates
03/17/2011US20110062495 Field Effect Transistor with Access Region Recharge
03/17/2011US20110062494 Structure with isotropic silicon recess profile in nanoscale dimensions
03/17/2011US20110062493 Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure
03/17/2011US20110062492 High-Quality Hetero-Epitaxy by Using Nano-Scale Epitaxy Technology
03/17/2011US20110062491 Power semiconductor module
03/17/2011US20110062489 Power device with self-aligned silicide contact
03/17/2011US20110062466 AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs
03/17/2011US20110062450 Silicon carbide semiconductor device
03/17/2011US20110062448 Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices
03/17/2011US20110062446 <100> or 45 degrees-rotated <100>, semiconductor-based, large-area, flexible, electronic devices
03/17/2011US20110062445 Display substrate and method for manufacturing the same
03/17/2011US20110062443 Thin body semiconductor devices having improved contact resistance and methods for the fabrication thereof
03/17/2011US20110062440 Zinc-Oxide Based Epitaxial Layers and Devices
03/17/2011US20110062439 Semiconductor device
03/17/2011US20110062438 Field-Effect Semiconductor Device
03/17/2011US20110062437 Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates
03/17/2011US20110062436 Transistor and display device
03/17/2011US20110062435 Semiconductor device and method for manufacturing the same
03/17/2011US20110062434 Light-emitting device and manufacturing method thereof
03/17/2011US20110062433 Semiconductor device and manufacturing method thereof
03/17/2011US20110062432 Semiconductor device and manufacturing method thereof
03/17/2011US20110062431 Laser annealing of metal oxide semiconductor on temperature sensitive substrate formations
03/17/2011US20110062422 Systems And Methods For Forming Defects On Graphitic Materials And Curing Radiation-Damaged Graphitic Materials
03/17/2011US20110062421 Semiconductor device and manufacturing method thereof
03/17/2011US20110062420 Quantum well thermoelectric module
03/17/2011US20110062419 Field effect transistor and method for manufacturing the same
03/17/2011US20110062418 Molecular transistor driving of nanoscale actuators from differential amplifier circuits compatible with carbon nanotube sensors and transducers
03/17/2011US20110062417 Semiconductor device and manufacturing method thereof
03/17/2011US20110062415 Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
03/17/2011US20110062411 MOSFET with a Nanowire Channel and Fully Silicided (FUSI) Wrapped Around Gate
03/17/2011US20110062410 Method for morphological control and encapsulation of materials for electronics and energy applications
03/17/2011DE102010026996A1 Halbleitervorrichtung Semiconductor device
03/17/2011DE102009015715B4 Verfahren zur Herstellung eines Transistorbauelements mit Bewahren der Integrität eines Gatestapel mit großem ε durch einen Versatzabstandshalter, der zum Bestimmen eines Abstands einer verformungsinduzierenden Halbleiterlegierung verwendet wird, und Transistorbauelement A process for producing a transistor device with preserving the integrity of a gate stack with large ε offset by a spacer that is used for determining a distance of a strain-inducing semiconductor alloy, and transistor device
03/17/2011DE102008001209B4 Halbleiterbauelemente und Verfahren zu deren Herstellung Semiconductor devices and processes for their preparation
03/17/2011DE102006049043B4 Durch Feldeffekt steuerbares Halbleiterbauelement und Verfahren zu dessen Herstellung Field effect-controllable semiconductor component and process for its preparation
03/17/2011DE102005001134B4 Knotenpunkt-Kontaktstrukturen in Halbleitervorrichtungen, insbesondere SRAM-Vorrichtungen, und Verfahren zur Herstellung derselben Node contact structures in semiconductor devices, in particular SRAM devices and methods of manufacturing the same
03/17/2011CA2772676A1 Semiconductor device and method of manufacturing semiconductor device
03/16/2011EP2296180A1 Process of stabilisation of germanium nanowires obtained by condensation
03/16/2011EP2296176A1 SRAM cell with four SGTs and manufacturing method thereof
03/16/2011EP2296173A1 A hemt device and a manufacturing of the hemt device
03/16/2011EP2296172A2 Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure
03/16/2011EP2294638A2 Triple-gate or multi-gate component based on the tunneling effect
03/16/2011EP2294637A1 Field effect superconductor transistor and method for making such transistor
03/16/2011EP2294621A1 Method of forming a power semiconductor device and power semiconductor device
03/16/2011EP2294620A1 Method for led-module assembly
03/16/2011EP2294610A2 Methods of providing electrical isolation and semiconductor structures including same
03/16/2011EP2294609A1 Interfacial layer regrowth control in high-k gate structure for field effect transistor
03/16/2011EP1517364B1 Semiconductor device and its producing method
03/16/2011CN201766079U Silicon carbide high-voltage N-type metal oxide semiconductor tube with floating buried layer
03/16/2011CN201766078U Silicon controlled rectifier structure capable of eliminating harm of photoetching pinholes
03/16/2011CN1985374B Improved strained-silicon CMOS device and method
03/16/2011CN1886838B Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect
03/16/2011CN1822389B Semiconductor device having deep trench charge compensation regions and method
03/16/2011CN1722022B Endless belt type transferring apparatus and image forming apparatus
03/16/2011CN101986435A Metal oxide semiconductor (MOS) device structure for preventing floating body and self-heating effect and manufacturing method thereof
03/16/2011CN101986434A Transverse bipolar transistor and manufacturing method thereof
03/16/2011CN101986433A Bipolar junction transistor based on silicon-on-insulator and manufacturing method thereof
03/16/2011CN101986431A Quad transistor CMOS image sensor and design method thereof
03/16/2011CN101986423A Method for forming high germanium concentration sige stressor and integrated circuit transistor structure
03/16/2011CN101740640B Pellet electrode type diode
03/16/2011CN101582454B Double bit U-shaped memory structure and manufacturing method thereof
03/16/2011CN101552278B An optical detection device, an electro-optical device and electronic equipment and an optical deterioration amending method
03/16/2011CN101490822B Semiconductor devices and methods of manufacture thereof
03/16/2011CN101465373B Semiconductor device and method for manufacturing the device
03/16/2011CN101442075B Flash memory
03/16/2011CN101325180B Systems and methods for self convergence during erase of a non-volatile memory
03/16/2011CN101312606B Display device
03/16/2011CN101281926B Semiconductor structure
03/16/2011CN101106159B Multi-grid electric crystal and its making method
03/16/2011CN101057338B Field effect transistor employing an amorphous oxide
03/16/2011CN101038406B Thin film transistor array substrate, liquid crystal display panel and LCD
03/15/2011USRE42223 Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit
03/15/2011US7907434 Semiconductor apparatus having a large-size bus connection
03/15/2011US7907226 Method of fabricating an array substrate for liquid crystal display device
03/15/2011US7907225 Liquid crystal display device
03/15/2011US7907197 Solid-state imaging device and solid-state imaging apparatus
03/15/2011US7907024 Resonant tunneling diode oscillation device and inspection apparatus
03/15/2011US7906858 Contact securing element for bonding a contact wire and for establishing an electrical connection
03/15/2011US7906856 Semiconductor device and method for manufacturing semiconductor device
03/15/2011US7906850 Structure of circuit board and method for fabricating same
03/15/2011US7906849 Chip structure and process for forming the same
03/15/2011US7906831 Semiconductor device with capacitor arrangement electrically coupled to inductor coil
03/15/2011US7906830 Epitaxial silicon growth
03/15/2011US7906823 MEMS apparatus and method of manufacturing the same
03/15/2011US7906822 Packaged device and method of manufacturing the same
03/15/2011US7906821 Semiconductor device
03/15/2011US7906820 Source offset MOSFET optimized for current voltage characteristic invariance with respect to changing temperatures
03/15/2011US7906817 High compressive stress carbon liners for MOS devices