Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2011
04/07/2011US20110079852 Method of fabricating a semiconductor device
04/07/2011US20110079851 Split level shallow trench isolation for area efficient body contacts in soi mosfets
04/07/2011US20110079850 Semiconductor structure including high voltage device
04/07/2011US20110079849 Lateral-diffusion metal-oxide-semiconductor device
04/07/2011US20110079848 Semiconductor device with dummy gate electrode and corresponding integrated circuit and manufacturing method
04/07/2011US20110079847 Semiconductor Device
04/07/2011US20110079846 High voltage devices, systems, and methods for forming the high voltage devices
04/07/2011US20110079843 POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH Embedded Dielectric Layers Containing Permanent Charges
04/07/2011US20110079842 Semiconductor device
04/07/2011US20110079840 Memory cell and manufacturing method thereof and memory structure
04/07/2011US20110079839 Non-Volatile Memory Devices Having Reduced Susceptibility to Leakage of Stored Charges and Methods of Forming Same
04/07/2011US20110079838 Non-volatile memory device
04/07/2011US20110079835 Semiconductor device including memory cell having charge accumulation layer
04/07/2011US20110079834 Semiconductor integrated circuit device
04/07/2011US20110079831 Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Including Recessed Channel Regions
04/07/2011US20110079830 Metal gate structure and method of manufacturing same
04/07/2011US20110079829 Finfets and methods for forming the same
04/07/2011US20110079828 Metal gate fet having reduced threshold voltage roll-off
04/07/2011US20110079827 Structure and method to create a damascene local interconnect during metal gate deposition
04/07/2011US20110079826 Semiconductor device, method for fabricating the same and apparatus for fabricating the same
04/07/2011US20110079825 Cascoded high voltage junction field effect transistor
04/07/2011US20110079824 Alternate 4-terminal jfet geometry to reduce gate to source capacitance
04/07/2011US20110079823 Vertical transistor and array of vertical transistor
04/07/2011US20110079822 Compound semiconductor device and manufacturing method
04/07/2011US20110079820 Device with self aligned stressor and method of making same
04/07/2011US20110079819 Igbt with fast reverse recovery time rectifier and manufacturing method thereof
04/07/2011US20110079818 Semiconductor circuit including electrostatic discharge circuit having protection element and trigger transistor
04/07/2011US20110079793 Semiconductor substrate and its manufacturing method
04/07/2011US20110079792 Semiconductor device and method of fabricating the semiconductor device
04/07/2011US20110079790 Group iii nitride semiconductor element and epitaxial wafer
04/07/2011US20110079788 Semiconductor device and manufacturing method thereof
04/07/2011US20110079786 Organic light emitting diode display and method of manufacturing the same
04/07/2011US20110079784 Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device having thin film transistor
04/07/2011US20110079780 Method of crystallizing amorphous semiconductor film, thin-film transistor, semiconductor device, display device, and method of manufacturing the same
04/07/2011US20110079778 Semiconductor device and manufacturing method thereof
04/07/2011US20110079777 Semiconductor device and method for manufacturing the same
04/07/2011US20110079771 Compound semiconductor device and method of manufacturing the same
04/07/2011US20110079770 Preparation of Thin Film Transistors (TFTs) or Radio Frequency Identification (RFID) Tags or Other Printable Electronics Using Ink-Jet Printer and Carbon Nanotube Inks
04/07/2011US20110079769 Nanometric MOS Transistor With Maximized Ration Between On-State Current and Off-State Current
04/07/2011US20110079768 Photoactive materials containing bulk and quantum-confined semiconductor structures and optoelectronic devices made therefrom
04/07/2011US20110079710 Microscopy support structures
04/07/2011DE102010041547A1 Halbleitervorrichtung mit einem SOI-Substrat und Verfahren zur Herstellung derselben A semiconductor device comprising an SOI substrate and method of manufacturing the same
04/07/2011DE102009047891A1 Verbesserte Füllbedingungen in einem Austauschgateverfahren durch Eckenverrundung vor dem vollständigen Entfernen eines Platzhaltermaterials Improved filling conditions in an exchange gate process by corner rounding before complete removal of a placeholder material
04/07/2011DE102009045178A1 Zündstufenthyristor mit entkoppelter Zündstufe Zündstufenthyristor with decoupled ignition stage
04/07/2011DE102006044808B4 Halbleitervorrichtung Semiconductor device
04/07/2011DE10101568B4 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
04/07/2011DE10051049B4 Aluminium-Nickel-Kontaktmetallisierung für p-dotiertes SiC und Herstellungsverfahren dafür Aluminum-nickel contact metallization for p-doped SiC and production method thereof
04/07/2011CA2779609A1 Extremely low resistance films and methods for modifying or creating same
04/06/2011EP2306626A1 Voltage conversion circuit
04/06/2011EP2306543A1 Functionalized molecular element, manufacturing method thereof, and functionalized molecular device
04/06/2011EP2306510A1 Magnetic memory element and its driving method and nonvolatile memory device
04/06/2011EP2306509A1 Process for manufacturing an integrated device with "damascene" field insulation, and integrated device made by such process
04/06/2011EP2306508A1 Integrated device with raised LOCOS insulation regions and process for manufacturing such device
04/06/2011EP2306500A2 Compound semiconductor device and method of manufacturing the same
04/06/2011EP2306497A1 Method for manufacturing a low defect interface between a dielectric and a III/V compound
04/06/2011EP2304802A1 Semiconductor material
04/06/2011EP2304420A2 Methods and apparatus for detecting molecular interactions using fet arrays
04/06/2011EP2042917B1 Array substrate, method for correcting the same, and liquid crystal display
04/06/2011EP1714330B1 Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
04/06/2011EP1678767B1 Method for producing a vertical field effect transistor
04/06/2011EP1616435B1 Improved imager light shield
04/06/2011EP1433200B1 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
04/06/2011CN201788977U Silicone epitaxial planar transistor structure capable of reducing thermal noise
04/06/2011CN201788976U Rectifier diode
04/06/2011CN201788968U Rectifier with single-layer lead frame
04/06/2011CN1885507B Method of producing a semiconductor device
04/06/2011CN1846313B Metal grid structure of transistor of integrated circuit and its manufacture method
04/06/2011CN1828937B Single metal gate complementary type MOS element
04/06/2011CN1806319B Mis transistor and cmos transistor
04/06/2011CN1790162B Method of forming pattern having step difference and method of making thin film transistor and liquid crystal display using the same
04/06/2011CN102007598A Thin film transistor and active matrix display
04/06/2011CN102007597A Low temperature thin film transistor process, device property, and device stability improvement
04/06/2011CN102007596A Semiconductor device
04/06/2011CN102007595A Semiconductor device and method of manufacturing the same
04/06/2011CN102007586A Thin film transistor and method for manufacturing the same
04/06/2011CN102007585A Thin film transistor and method for manufacturing the same
04/06/2011CN102007584A Semiconductor device structures and related processes
04/06/2011CN102007583A Processes for producing dielectric film and semiconductor device, dielectric film, and recording medium
04/06/2011CN102007571A Deposition and selective removal of conducting helplayer for nanostructure processing
04/06/2011CN102007068A Planar tape
04/06/2011CN102007067A Nanowire wrap gate devices
04/06/2011CN102005483A Thin-film transistor
04/06/2011CN102005482A Tft
04/06/2011CN102005481A Tunneling field effect transistor with T-shaped grid structure and low power consumption
04/06/2011CN102005480A High-voltage low-on-resistance LDMOS device and manufacturing method thereof
04/06/2011CN102005479A GaAs MOS (Metal Oxide Semiconductor) device with oxygen-absorbing titanium cap layer and manufacturing method thereof
04/06/2011CN102005478A Gate-enhanced power MOSFET device integrating Hottky rectifier
04/06/2011CN102005477A Integrated circuit, fin field effect transistor (finfet) and fabrication method thereof
04/06/2011CN102005476A Power metal oxide semiconductor field-effect transistor and manufacturing method thereof
04/06/2011CN102005475A Insulated gate bipolar transistor (IGBT) with improved terminal and manufacturing method thereof
04/06/2011CN102005474A Semiconductor device and method for manufacturing the same
04/06/2011CN102005473A IGBT (insulated gate bipolar translator) with improved terminal
04/06/2011CN102005472A Power semiconductor device and manufacturing method thereof
04/06/2011CN102005471A Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
04/06/2011CN102005470A Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device
04/06/2011CN102005469A Semiconductor device and method of manufacturing the same
04/06/2011CN102005468A Terminal of power semiconductor and manufacturing method of terminal
04/06/2011CN102005467A Field ring terminal of power semiconductor device and manufacturing method thereof
04/06/2011CN102005458A Integrated circuit device, memory device and manufacturing method thereof
04/06/2011CN102005454A Silicon on insulator complementary metal oxide semiconductor field effect transistor