Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2011
03/31/2011US20110073873 Compound semiconductor device using sic substrate and its manufacture
03/31/2011US20110073871 Gallium nitride substrate
03/31/2011US20110073869 Method to reduce dislocation density in silicon using stress
03/31/2011US20110073863 Organic light emitting diode display
03/31/2011US20110073861 Integrated circuit device and method for manufacturing integrated circuit device
03/31/2011US20110073860 Semiconductor device and display device
03/31/2011US20110073859 Reduced Stiction MEMS Device with Exposed Silicon Carbide
03/31/2011US20110073857 Semiconductor device, its manufacture method and template substrate
03/31/2011US20110073856 Thin film transistor
03/31/2011US20110073842 Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor
03/31/2011US20110073841 Nano line structures in microelectronic devices
03/31/2011US20110073840 Radial contact for nanowires
03/31/2011US20110073839 Ii-vi semiconductor nanowires
03/31/2011US20110073835 Semiconductor nanocrystal film
03/31/2011US20110073834 Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation
03/31/2011US20110073829 Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same
03/31/2011US20110073168 Layered Structure
03/31/2011DE10331826B4 Transflektives Flüssigkristalldisplay und Verfahren zur Herstellung desselben A transflective liquid crystal display and method of manufacturing the same
03/31/2011DE10219107B4 SOI-Transistorelement mit einem verbesserten Rückseitenkontakt und ein Verfahren zur Herstellung desselben und Verfahren zur Herstellung eines Ohmschen Kontaktes auf einem Substrat SOI transistor of the same element having an improved back-side contact and a method of manufacturing and methods of making an ohmic contact on a substrate
03/31/2011DE102010046770A1 Halbleiteranordnung Semiconductor device
03/31/2011DE102009047890A1 Verbessertes Füllverhalten in einem Austauschgateverfahren durch Eckenverrundung auf der Grundlage eines Opferfüllmaterials Improved filling behavior in a replacement gate process by corner rounding on the basis of a sacrificial filler
03/31/2011DE102009045037A1 Elektrooptisches Bauelement, Verwendung und Herstellung des Bauelements Electro-optical device, use and production of the component
03/31/2011DE102009043329A1 Verspannungstechnologie in einer Kontaktebene von Halbleiterbauelementen mittels verspannter leitender Schichten und einem Isolierabstandshalter Bracing technology in a contact plane of semiconductor devices using strained conductive layers and an insulating spacer
03/31/2011DE102009041642A1 Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle Quantum wire array field-effect (power -) - QFET transistor (especially magnetic - MQFET, but not electrically or optically driven) at room temperature, based on polyacetylene-like molecules
03/31/2011DE102005060642B4 Halbleiterdrucksensor Semiconductor pressure sensor
03/31/2011DE102005039564B4 Verfahren zum Herstellen eines Halbleiterbauteils A method of manufacturing a semiconductor device
03/31/2011DE102005029313B4 Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device
03/31/2011DE102004031440B4 Kompensationsfilm, Herstellverfahren für einen solchen sowie LCD unter Verwendung eines solchen Compensation film, production method for such an LCD and using such
03/31/2011CA2775324A1 Passivated nanoparticles
03/31/2011CA2763055A1 Silicon carbide ingot, silicon carbide substrate, manufacturing method thereof, crucible, and semiconductor substrate
03/30/2011EP2302687A2 Gallium nitride semiconductor devices
03/30/2011EP2302686A2 Guard ring for semiconductor devices
03/30/2011EP2302685A2 Oxide semiconductor and thin film transistor including same
03/30/2011EP2302684A2 Power MOS device
03/30/2011EP2302683A1 Field effect semiconductor device and manufacturing method thereof
03/30/2011EP2302677A1 Method for manufacturing a semiconductor device
03/30/2011EP2302668A2 Semiconductor device having tipless epitaxial source/drain regions
03/30/2011EP2302665A1 Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
03/30/2011EP2302108A1 Nanostructures and methods for manufacturing the same
03/30/2011EP2301983A1 Phenoxazine polymeric compound and light-emitting element comprising same
03/30/2011EP1026754B1 Diode
03/30/2011CN1967359B Multi-field vertical assigned LCD panel
03/30/2011CN1577019B Liquid crystal display and thin film transistor array panel therefor
03/30/2011CN101999171A Applying trenched transient voltage suppressor (TVS) technology for distributed low pass filters
03/30/2011CN101999168A Method of creating alignment/centering guides for small diameter, high density through-wafer via die stacking
03/30/2011CN101999162A Methods for formation of substrate elements
03/30/2011CN101999081A Acceleration sensor
03/30/2011CN101997037A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
03/30/2011CN101997036A 半导体装置及其制造方法 Semiconductor device and manufacturing method
03/30/2011CN101997035A 薄膜晶体管 The thin film transistor
03/30/2011CN101997034A Power semiconductor device
03/30/2011CN101997033A Shielded gate trench mosfet device and fabrication
03/30/2011CN101997032A Semiconductor device and manufacturing method thereof
03/30/2011CN101997031A Input/output electrostatic discharge devic and cascade input/output electrostatic discharge device
03/30/2011CN101997030A Trench metal-oxide-semiconductor field effect transistor (MOSFET) with shallow trench structure and manufacturing method thereof
03/30/2011CN101997029A High-mobility quantum-dot field effect transistor and manufacturing method thereof
03/30/2011CN101997028A Bipolar junction transistor and bipolar CMOS (Complementary Metal Oxide Semiconductor) integrated circuit as well as manufacturing method
03/30/2011CN101997027A Field effect transistor and gate structure thereof
03/30/2011CN101997026A Substrate structure processed by a substrate and manufacturing method thereof
03/30/2011CN101997020A High-voltage transistor device with integrated resistor
03/30/2011CN101997010A Digital X-ray detection panel and manufacturing method thereof
03/30/2011CN101997007A Semiconductor device and method for manufacturing semiconductor device
03/30/2011CN101997006A Semiconductor device and method for manufacturing the same
03/30/2011CN101997005A Semiconductor device and method for manufacturing the same
03/30/2011CN101997004A Semiconductor device and method for manufacturing the same
03/30/2011CN101996996A CMOS (complementary metaloxide semiconductor) device and manufacturing method thereof
03/30/2011CN101996995A Semiconductor device and method for manufacturing the same
03/30/2011CN101996994A Semiconductor and manufacturing method thereof
03/30/2011CN101996992A Diode structure and manufacture method
03/30/2011CN101996951A Nonvolatile memory structure and forming method thereof
03/30/2011CN101996885A Metal oxide semiconductor (MOS) transistor and manufacturing method thereof
03/30/2011CN101996874A Semiconductor device and method for manufacturing the same
03/30/2011CN101996864A Method for fabricating MIM capacitor in semiconductor chip and MIM capacitor
03/30/2011CN101995724A Display device
03/30/2011CN101993035A Switch element for graphene sodium electromechanical system
03/30/2011CN101536167B Sb-based CMOS devices
03/30/2011CN101479843B Semiconductor device and semiconductor manufacturing method
03/30/2011CN101447486B High frequency switch circuit device
03/30/2011CN101436611B Sensitive triggering unidirection-controlled silicon
03/30/2011CN101410963B Nanowire transistor with surrounding gate and its manufacture method
03/30/2011CN101409307B Semiconductor device and method of manufacturing the same
03/30/2011CN101405849B Stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors and its manufacture method
03/30/2011CN101366123B JFET with modification implant and its production method
03/30/2011CN101326643B MOS transistor and a method of manufacturing an MOS transistor
03/30/2011CN101326631B Complementary metal oxide semiconductor
03/30/2011CN101299122B Liquid crystal display panel and manufacture method thereof
03/30/2011CN101286526B Semiconductor device and method for fabricating the same
03/30/2011CN101243556B High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same
03/30/2011CN101154683B Transistor structure and its manufacturing method
03/30/2011CN101103465B Memory device having trapezoidal bitlines and method of fabricating same
03/30/2011CN101065811B Method of fabricating a tunneling nanotube field effect transistor
03/29/2011US7916232 Electro-optical device and method for driving the same
03/29/2011US7916230 Thin film transistor-liquid crystal display having an insulating layer exposing portions of a gate island
03/29/2011US7915744 Bond pad structures and semiconductor devices using the same
03/29/2011US7915743 Adhesive for electronic components, method for manufacturing semiconductor chip laminate, and semiconductor device
03/29/2011US7915742 Determining the placement of semiconductor components on an integrated circuit
03/29/2011US7915741 Solder bump UBM structure
03/29/2011US7915740 Semiconductor device
03/29/2011US7915738 Stackable multi-chip package system with support structure
03/29/2011US7915735 Selective metal deposition over dielectric layers