Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2011
03/31/2011WO2011036999A1 Oxide semiconductor film and semiconductor device
03/31/2011WO2011036987A1 Display device
03/31/2011WO2011036981A1 Semiconductor device
03/31/2011WO2011036952A1 Electronic state calculation system and program
03/31/2011WO2011036921A1 Semiconductor device, field-effect transistor, and electronic device
03/31/2011WO2011036915A1 Semiconductor device manufacturing method and semiconductor device
03/31/2011WO2011036866A1 Organic thin-film transistor
03/31/2011WO2011036841A1 Semiconductor device and method for manufacturing same
03/31/2011WO2011036828A1 Method for manufacturing semiconductor device, and semiconductor device manufactured using same
03/31/2011WO2011036796A1 Magnetic memory
03/31/2011WO2011036779A1 Volatile semiconductor memory device
03/31/2011WO2011036775A1 Nonvolatile semiconductor memory
03/31/2011WO2011036770A1 Pass transistor circuit with memory function, and switching box circuit provided with pass transistor circuit
03/31/2011WO2011036752A1 Resonant tunneling magnetoresistance effect element, magnetic memory cell, and magnetic random access memory
03/31/2011WO2011036214A1 A memory device and a method of manufacturing the memory device
03/31/2011WO2011036037A1 Activation of graphene buffer layers on silicon carbide
03/31/2011WO2011035727A1 Method for fabricating trench dmos transistor
03/31/2011WO2011008531A3 Enhancement mode hemt for digital and analog applications
03/31/2011WO2010151857A3 Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation
03/31/2011WO2010148266A3 Vertical junction field effect transistors and diodes having graded doped regions and methods of making
03/31/2011WO2010123314A3 Novel epoxy resin and epoxy resin composition comprising the same
03/31/2011WO2010120704A3 Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
03/31/2011US20110076833 Method of manufacturing semiconductor device
03/31/2011US20110076818 Insulated gate type semiconductor device and method for fabricating the same
03/31/2011US20110075486 Charge trapping memory cell having bandgap engineered tunneling structure with oxynitride isolation layer
03/31/2011US20110075476 Spintronic device and information transmitting method
03/31/2011US20110075467 Ferroelectric memory devices and operating methods thereof
03/31/2011US20110074511 Layout and pad floor plan of power transistor for good performance of spu and stog
03/31/2011US20110074498 Electronic Devices and Systems, and Methods for Making and Using the Same
03/31/2011US20110074493 Configurable np channel lateral drain extended mos-based transistor
03/31/2011US20110074492 Charge Pump Circuit And A Novel Capacitor For A Memory Integrated Circuit
03/31/2011US20110074406 Three axis magnetic field sensor
03/31/2011US20110074381 Sensors using high electron mobility transistors
03/31/2011US20110074050 Film for semiconductor device
03/31/2011US20110074036 Via contact structures and methods for integrated circuits
03/31/2011US20110073995 Semiconductor device, fabrication method of the semiconductor devices
03/31/2011US20110073994 Trench capacitor and method for producing the same
03/31/2011US20110073993 Laminated thin-film device, manufacturing method thereof, and circuit
03/31/2011US20110073990 Capacitor and Method for Making Same
03/31/2011US20110073989 Optical modulator utilizing wafer bonding technology
03/31/2011US20110073987 Through Substrate Features in Semiconductor Substrates
03/31/2011US20110073985 Method of Generating Uniformly Aligned Well and Isolation Regions in a Substrate and Resulting Structure
03/31/2011US20110073984 Semiconductor power module package with temperature sensor mounted thereon and method of fabricating the same
03/31/2011US20110073981 Semiconductor device and method for manufacturing the same
03/31/2011US20110073970 Magnetoresistive element and magnetic memory
03/31/2011US20110073969 Sensor system and method for manufacturing same
03/31/2011US20110073968 Element array, electromechanical conversion device, and process for producing the same
03/31/2011US20110073967 Apparatus and method of forming a mems acoustic transducer with layer transfer processes
03/31/2011US20110073966 Indexing of electronic devices distributed on different chips
03/31/2011US20110073965 Gate pattern of semiconductor device and method for fabricating the same
03/31/2011US20110073964 Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same
03/31/2011US20110073963 Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a placeholder material
03/31/2011US20110073962 Method and apparatus for forming a semiconductor gate
03/31/2011US20110073961 Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakage
03/31/2011US20110073960 Integrated device with raised locos insulation regions and process for manufacturing such device
03/31/2011US20110073959 Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacer
03/31/2011US20110073957 Metal gate transistor with resistor
03/31/2011US20110073952 Controlling the Shape of Source/Drain Regions in FinFETs
03/31/2011US20110073951 Enhanced stress-retention fin-fet devices and methods of fabricating enhanced stress retention fin-fet devices
03/31/2011US20110073950 Semiconductor device and method of manufacturing the same
03/31/2011US20110073947 Semiconductor device
03/31/2011US20110073946 Ldmos transistor
03/31/2011US20110073945 Process for manufacturing an integrated device with "damascene" field insulation, and integrated device made by such process
03/31/2011US20110073944 Semiconductor device and method of manufacturing the semiconductor device
03/31/2011US20110073942 High-voltage transistor structure with reduced gate capacitance
03/31/2011US20110073940 Semiconductor device with one-side-contact and method for fabricating the same
03/31/2011US20110073939 Semiconductor device
03/31/2011US20110073938 Field-effect semiconductor device and method of producing the same
03/31/2011US20110073937 Method for Fabricating a Charge Trapping Memory Device
03/31/2011US20110073936 Nanocrystal memory with differential energy bands and method of formation
03/31/2011US20110073935 Nonvolatile semiconductor memory device
03/31/2011US20110073934 Semiconductor device and manufacturing method thereof
03/31/2011US20110073933 Semiconductor device and method of manufacturing the same
03/31/2011US20110073932 Non volatile semiconductor memory device
03/31/2011US20110073931 Semiconductor device manufacturing method
03/31/2011US20110073930 Non-volatile memory devices and methods of manufacturing the same
03/31/2011US20110073929 High coupling memory cell
03/31/2011US20110073928 Non-Volatile Memory Devices Having Semiconductor Barrier Patterns and Methods of Forming Such Devices
03/31/2011US20110073927 Non-volatile memory device and method for manufacturing the same
03/31/2011US20110073924 Non-Volatile Memory Cell and Layout Structure of Non-Volatile Memory Device
03/31/2011US20110073922 Contact forming method, semiconductor device manufacturing method, and semiconductor device
03/31/2011US20110073921 Semiconductor device and manufacturing method of the same
03/31/2011US20110073920 Superior fill conditions in a replacement gate approach by corner rounding based on a sacrificial fill material
03/31/2011US20110073919 Method of fabricating finfet device
03/31/2011US20110073918 Semiconductor device and manufacturing method thereof
03/31/2011US20110073917 Method of high density memory fabrication
03/31/2011US20110073913 Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails
03/31/2011US20110073912 AlGaN/GaN hemt with normally-off threshold minimized and method of manufacturing the same
03/31/2011US20110073911 Semiconductor device
03/31/2011US20110073910 Nitride semiconductor material, semiconductor element, and manufacturing method thereof
03/31/2011US20110073909 Replacement spacer for tunnel fets
03/31/2011US20110073908 III-V Semiconductor Device Structures
03/31/2011US20110073907 Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
03/31/2011US20110073906 High voltage MOSFET diode reverse recovery by minimizing P-body charges
03/31/2011US20110073904 Semiconductor device having SOI substrate and method for manufacturing the same
03/31/2011US20110073903 Semiconductor device
03/31/2011US20110073902 Semiconductor Body and Method of Producing a Semiconductor Body
03/31/2011US20110073888 Group iii nitride semiconductor optical device, epitaxial substrate, and method of making group iii nitride semiconductor light-emitting device
03/31/2011US20110073887 Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter
03/31/2011US20110073874 Method of reducing memory effects in semiconductor epitaxy