| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 04/21/2011 | DE102010037703A1 Kondensator und Verfahren zu seiner Herstellung Capacitor and process for its preparation |
| 04/21/2011 | DE102007028798B4 Leistungshalbleitervorrichtung Power semiconductor device |
| 04/21/2011 | DE102007024355B4 Verfahren zum Herstellen einer Schutzstruktur A method for producing a protective structure |
| 04/21/2011 | DE102004043855B4 Verfahren zur Herstellung einer Magnet-Tunnel-Junction-Vorrichtung A method of manufacturing a magnetic tunnel junction device |
| 04/21/2011 | DE10151376B4 Dynamischer Halbleitergrößensensor zum Erfassen einer dynamischen Größe in zwei Achsen mit einem x-förmigen Massenabschnitt Dynamic semiconductor size sensor for detecting a dynamic quantity in two axes with an x-shaped ground portion |
| 04/21/2011 | DE10128577B4 Halbleiterdrucksensor mit Dehnungsmesser und Schaltungsabschnitt auf einem Halbleitersubstrat A semiconductor pressure sensor with strain gauges and circuit portion on a semiconductor substrate |
| 04/21/2011 | CA2759861A1 Method for manufacturing silicon carbide substrate and silicon carbide substrate |
| 04/21/2011 | CA2759856A1 Method for manufacturing silicon carbide substrate, silicon carbide substrate, and semiconductor device |
| 04/20/2011 | EP2312638A1 Semiconductor device manufacturing method and semiconductor device |
| 04/20/2011 | EP2312637A1 Organic transistor and method for manufacturing the same |
| 04/20/2011 | EP2312636A1 Organic thin film transistor, method for manufacturing the same, display member using the organic thin film transistor, and display |
| 04/20/2011 | EP2312635A2 Transistors with fluorine treatment |
| 04/20/2011 | EP2312634A2 Transistors with fluorine treatment |
| 04/20/2011 | EP2312633A1 Method and installation for producing a semiconductor device, and semiconductor device |
| 04/20/2011 | EP2312624A1 NOR EEPROM device comprising memory cells with one memory transistor and one selection transistor |
| 04/20/2011 | EP2312621A1 MOS transistor including extended LDD source-drain regions |
| 04/20/2011 | EP2312620A1 Flexible semiconductor device and method for manufacturing same |
| 04/20/2011 | EP2312560A1 Active matrix substrate, display panel, display device, and active matrix substrate manufacturing method |
| 04/20/2011 | EP2311915A1 Composition for insulating layer |
| 04/20/2011 | EP2311095A2 Normally-off semiconductor devices and methods of fabricating the same |
| 04/20/2011 | EP2311094A1 Multi-layer reconfigurable switches |
| 04/20/2011 | EP2311090A1 Buried assymetric junction esd protection device |
| 04/20/2011 | EP2311078A1 Patterned integrated circuit and method of production thereof |
| 04/20/2011 | EP2311077A1 Method of forming finned semiconductor devices with trench isolation |
| 04/20/2011 | EP2229690B1 Process for forming a wire portion in an integrated electronic circuit |
| 04/20/2011 | EP1463121B1 Semiconductor device and production method therefor |
| 04/20/2011 | EP1177583B1 Silicon carbide lateral mosfet and method of making the same |
| 04/20/2011 | CN201804874U MOS (metal oxide semiconductor) field effect transistor with diode protective circuit |
| 04/20/2011 | CN201804873U Silicon-controlled structure capable of shortening punch-through time |
| 04/20/2011 | CN201804872U Unidirectional silicon controlled structure for improving switching speed |
| 04/20/2011 | CN201804871U Silicon controlled penetrating structure formed by gallium diffusion |
| 04/20/2011 | CN201804870U Internal insulation type plastic package semi-conductor device |
| 04/20/2011 | CN201804869U Weather-resistant micro-triggered silicon controlled rectifier |
| 04/20/2011 | CN1912719B Thin film transistor array panel |
| 04/20/2011 | CN1894093B Vicinal gallium nitride substrate for high quality homoepitaxy |
| 04/20/2011 | CN1881537B Method for manufacturing active matrix display |
| 04/20/2011 | CN1828836B Epitaxial semiconductor substrate manufacturing method and semiconductor component production method |
| 04/20/2011 | CN1713299B Magnetic memory unit and fabricating method thereof |
| 04/20/2011 | CN1603924B Active matrix type liquid crystal electroptical device and camera possessing the device |
| 04/20/2011 | CN1574360B SONOS memory device having nanocrystal layer |
| 04/20/2011 | CN102027612A Carbon nanotube composite, organic semiconductor composite, and field-effect transistor |
| 04/20/2011 | CN102027589A Nonvolatile semiconductor memory device and manufacturing method thereof |
| 04/20/2011 | CN102027583A Methods of making lateral junction field effect transistors using selective epitaxial growth |
| 04/20/2011 | CN102027582A Contact forming method, semiconductor device manufacturing method and semiconductor device |
| 04/20/2011 | CN102027580A Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semicomductor device |
| 04/20/2011 | CN102024852A Oxide thin film transistor and manufacturing method thereof |
| 04/20/2011 | CN102024851A Semiconductor device |
| 04/20/2011 | CN102024850A Metal oxide semiconductor field effect transistor (mosfet) and manufacturing method thereof |
| 04/20/2011 | CN102024849A Metal oxide semiconductor field effect transistor and manufacturing method thereof |
| 04/20/2011 | CN102024848A Trench structure for power device and manufacturing method thereof |
| 04/20/2011 | CN102024847A High-voltage power device structure |
| 04/20/2011 | CN102024846A 3-terminal electronic device and 2-terminal electronic device |
| 04/20/2011 | CN102024845A Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structure |
| 04/20/2011 | CN102024842A Display and method for manufacturing the same |
| 04/20/2011 | CN102024824A Array field effect transistor |
| 04/20/2011 | CN102024821A Non-volatile memory device as well as non-volatile memory and manufacturing method thereof |
| 04/20/2011 | CN102024820A Memory cell and manufacture method thereof and memory structure |
| 04/20/2011 | CN102024819A Apparatus for providing SRAM and CAM bit cell |
| 04/20/2011 | CN102024818A Semiconductor memory device |
| 04/20/2011 | CN102024817A Semiconductor device |
| 04/20/2011 | CN102024813A Semiconductor device, complementary oxide semiconductor device and integrated circuit |
| 04/20/2011 | CN102024812A Semiconductor device and method of manufacturing the same |
| 04/20/2011 | CN102024811A Electrostatic discharge protection circuit |
| 04/20/2011 | CN102024809A Integrated circuit device with capacitor structure and manufacturing method thereof |
| 04/20/2011 | CN102024806A Metal-oxide layer-metal capacitor with low parasitic capacitance |
| 04/20/2011 | CN102024793A Semiconductor component |
| 04/20/2011 | CN102024792A Semiconductor device for electrostatic discharge protection |
| 04/20/2011 | CN102024774A Contact pad |
| 04/20/2011 | CN102024759A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
| 04/20/2011 | CN102024757A 像素结构及其制造方法 Pixel structure and its manufacturing method |
| 04/20/2011 | CN102024744A Semiconductor device and manufacture method thereof |
| 04/20/2011 | CN102024743A Semiconductor structures and methods for forming isolation between fin structures of finfet devices |
| 04/20/2011 | CN102024705A Semiconductor and method for producing same |
| 04/20/2011 | CN102024565A Capacitor structure |
| 04/20/2011 | CN102024494A Green transistor, resistive random access memory and drive method thereof |
| 04/20/2011 | CN101859703B Low turn-on voltage diode preparation method |
| 04/20/2011 | CN101771081B N-type super-junction transverse double-diffusion semiconductor metallic oxide transistor |
| 04/20/2011 | CN101647095B Patterning method and method for fabricating electronic element |
| 04/20/2011 | CN101626031B Semiconductor structure |
| 04/20/2011 | CN101621071B Metal oxide semiconductor device and manufacturing method thereof |
| 04/20/2011 | CN101593751B Integrated circuit structure |
| 04/20/2011 | CN101567394B Vertical surrounding grid junction type field effect transistor, preparation method and applications thereof |
| 04/20/2011 | CN101563784B Low forward voltage drop transient voltage suppressor and method of fabricating |
| 04/20/2011 | CN101556955B Structure for measuring body pinch resistance of high density trench MOSFET array |
| 04/20/2011 | CN101526709B Liquid crystal display divice |
| 04/20/2011 | CN101523614B Semiconductor device and its drive method |
| 04/20/2011 | CN101512727B Method for improving inversion layer mobility in a silicon carbide MOSFET |
| 04/20/2011 | CN101442008B Insulated gate semiconductor device and novel self-alignment manufacture method thereof |
| 04/20/2011 | CN101419984B Semiconductor structure and method for fabricating same |
| 04/20/2011 | CN101416319B Vertical-channel junction field-effect transistors having buried gates and methods of making |
| 04/20/2011 | CN101414553B Method of processing semiconductor wafer |
| 04/20/2011 | CN101388363B Non-volatile memory and preparation thereof |
| 04/20/2011 | CN101371344B 场效应晶体管 FET |
| 04/20/2011 | CN101369401B Display device and electronic apparatus |
| 04/20/2011 | CN101364611B High-voltage metal oxide semiconductor transistor |
| 04/20/2011 | CN101364543B Semiconductor device and method for manufacturing same |
| 04/20/2011 | CN101350309B Plane double diffusion metal oxide semiconductor device and preparation method |
| 04/20/2011 | CN101339957B Power FET with low on-resistance using merged metal layers |
| 04/20/2011 | CN101308849B Semi-conductor apparatus and forming method thereof |
| 04/20/2011 | CN101246288B Liquid crystal display device |