Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/2012
08/30/2012US20120217501 Peeling Method and Method of Manufacturing Semiconductor Device
08/30/2012US20120217500 Wiring, thin film transistor, thin film transistor panel and methods for manufacturing the same
08/30/2012US20120217499 Semiconductor device and method for manufacturing semiconductor device
08/30/2012US20120217497 Manufacturing method for semiconductor device, manufacturing apparatus for semiconductor device, and semiconductor device
08/30/2012US20120217480 Method for manufacturing graphene electronics
08/30/2012US20120217468 Silicon Nanotube MOSFET
08/30/2012US20120217467 Buried channel finfet sonos with improved p/e cycling endurance
08/30/2012US20120217462 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
08/30/2012US20120217461 Semiconductor memory device and method of manufacturing the same
08/30/2012US20120217421 Method and system for forming patterns using charged particle beam lithography with overlapping shots
08/30/2012US20120217210 Support method, high-temperature treatment method using same, and support jig
08/30/2012US20120216954 Apparatus and method for fabricating semiconductor devices and substrates
08/30/2012US20120216743 Attachment for substrates having different diameters, substrate processing apparatus, and method of manufacturing substrate or semiconductor device
08/30/2012DE112010004205T5 MOSFET mit hohem Betriebsstrom MOSFET with high operating current
08/30/2012DE112010004204T5 Koaxiale Silizium-Durchkontaktierung Coaxial Through-silicon via
08/30/2012DE112010003900T5 Lösung zum Ätzen von Silizium und Ätz-Verfahren Solution for etching silicon and etching method
08/30/2012DE112010003696T5 Polierverfahren und Poliervorrichtung Polishing method and polishing apparatus
08/30/2012DE112010002901T5 Verbindungsanordnungen und Verfahren zum Herstellen und Verwenden derselben Connection assemblies and methods of making and using the same
08/30/2012DE112010002354T5 3D-Kanalarchitektur für Halbleitervorrichtungen 3D channel architecture for semiconductor devices
08/30/2012DE112010000781T5 Plasmaverarbeitungsvorrichtung Plasma processing apparatus
08/30/2012DE112010000447T5 Elektronische Schaltungsvorrichtung An electronic circuit device
08/30/2012DE112009004402T5 Pyrometrie zur Substratverarbeitung Pyrometry for substrate processing
08/30/2012DE112006001048B4 Herstellungsverfahren für Schaltungsteile Production method for circuit parts
08/30/2012DE112005000704B4 Nicht-planarer Bulk-Transistor mit verspanntem Kanal mit erhöhter Mobilität und Verfahren zur Herstellung Non-planar bulk transistor having strained channel with increased mobility and process for preparing
08/30/2012DE112004003055B4 Flüssige Zusammensetzung mit dispergierten Diamantpartikeln, Herstellungsverfahren dafür und Verwendung zum Herstellen eines Abrasivstoffes A liquid composition with dispersed diamond particles, processes for its preparation and use for producing an abrasive substance
08/30/2012DE102012203038A1 System und Verfahren zur Verteilungsanalyse von integrierten Stapel-Die-Schaltungen System and method for distribution analysis of integrated circuits, the stack-
08/30/2012DE102012202961A1 Halbleiterbauelement mit verbessertem Dynamikverhalten Semiconductor device with improved dynamic behavior
08/30/2012DE102011012608A1 Verfahren zur Herstellung von Lichtauskoppelstrukturen in einem Halbleiterkörper und Licht emittierender Halbleiterkörper A process for preparing Lichtauskoppelstrukturen in a semiconductor body and light emitting semiconductor body
08/30/2012DE102011012275A1 Cutting solar cell panel, comprises providing solar cell substrate comprising P-type layer and N-type layer, using laser for incising trench on P-type layer surface and using hot air along trench on surface of P-type layer to produce break
08/30/2012DE102011004757A1 Vertikale Speichertransistoren mit sich frei einstellendem Körperpotential, die in Vollsubstratbauelementen hergestellt sind und vergrabene Fühler- und Wortleitungen aufweisen Vertical storage transistors with free one setting body potential, which are produced in bulk devices and have buried sensor and word lines
08/30/2012DE102011004672A1 SOI-Halbleiterbauelement mit einer Substratdiode mit reduzierter Metallsilizidleckage SOI semiconductor device with a substrate diode with reduced Metallsilizidleckage
08/30/2012DE102011000973A1 Verfahren zur flächigen Gasphasenbehandlng von Halbleiterbauelementen A process for flat Gasphasenbehandlng of semiconductor devices
08/30/2012DE102010064280B4 Verfahren zur Verringerung der Defektraten in PFET-Transistoren, die ein Si/GE Halbleitermaterial aufweisen, durch Vorsehen einer graduellen Ge-Konzentration, und entsprechende PFET-Transistoren A method of reducing the defect rate in PFET transistors having a Si / Ge semiconductor material, by providing a gradual Ge concentration, and corresponding PFET transistors
08/30/2012DE102010038744B4 Erhöhung der Robustheit in einem Doppelverspannungsschichtenverfahren in einem Halbleiterbauelement durch Anwenden einer Nasschemie Increase the robustness in a double stress layers method in a semiconductor device by applying a wet chemistry
08/30/2012DE102010006315B4 Verfahren zur lokalen Hochdotierung und Kontaktierung einer Halbleiterstruktur, welche eine Solarzelle oder eine Vorstufe einer Solarzelle ist A method for local high doping and bonding a semiconductor structure is a solar cell or a precursor of a solar cell
08/30/2012DE102009032037B4 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
08/30/2012DE102009005650B4 Elektronikmodul und Verfahren zur Herstellung eines Elektronikmoduls Electronic module and method for producing an electronic module
08/30/2012DE102009004392B9 Datenerzeugungsverfahren für Halbleitervorrichtung und Elektronenstrahlbelichtungssystem Data forming method for the semiconductor device and electron beam exposure system
08/30/2012DE102007063272B4 Dielektrisches Zwischenschichtmaterial in einem Halbleiterbauelement mit verspannten Schichten mit einem Zwischenpuffermaterial Interlayer dielectric material in a semiconductor device with strained layers with an intermediate buffer material
08/30/2012DE102007034247B4 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
08/30/2012DE102007025950B4 Halbleitervorrichtung und ihr Herstellungsverfahren A semiconductor device and its manufacturing method
08/30/2012DE102006053958B4 Verbindungsverfahren für ein Halbleitersubstrat und eine Schicht, sowie Herstellungsverfahren von Halbleiterchips unter Verwendung hiervon Bonding method for a semiconductor substrate and a layer, and production method of semiconductor chips using thereof
08/30/2012DE102006044836B4 Module mit einem Abschirm- und/oder Wärmeableitungselement und Verfahren zu ihrer Herstellung Modules with a shield and / or heat dissipation element and process for their preparation
08/30/2012DE102004019886B4 Integrierte Hochspannungsschaltung A high voltage IC
08/30/2012DE10133448B4 Ausrichtungsverfahren und -vorrichtung zum Ausrichten eines Schneidmessers in einer Dicing-Maschine Alignment method and apparatus for aligning a cutting blade in a dicing machine
08/29/2012EP2492965A2 Merged PN/Schokky diode
08/29/2012EP2492963A2 Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
08/29/2012EP2492959A1 Electrical component having an electrical connection arrangement and method for the manufacture thereof
08/29/2012EP2492956A1 Process for production of electronic device, electronic device, and device for production of electronic device
08/29/2012EP2492955A1 Plasma etching method, semiconductor device manufacturing method and computer-readable storage medium
08/29/2012EP2492954A2 Method for producing an oxide layer on a semiconductor element
08/29/2012EP2492953A2 Nitride based light emitting device using patterned lattice buffer layer and method of manufacturing the same
08/29/2012EP2492952A2 Nitride based light emitting device with excellent crystallinity and brightness and method of manufacturing the same
08/29/2012EP2492951A2 Nitride based light emitting device using silicon substrate and method of manufacturing the same
08/29/2012EP2492331A1 Photosensitive adhesive composition, photosensitive adhesive sheet, and semiconductor devices using same
08/29/2012EP2491593A2 Split gate semiconductor device with curved gate oxide profile
08/29/2012EP2491592A2 Split gate field effect transistor
08/29/2012EP2491586A1 Semiconductor device
08/29/2012EP2491585A1 Semiconductor device
08/29/2012EP2491584A1 Method and device for treating a substrate surface of a substrate
08/29/2012EP2491583A1 Apparatus for processing continuous lengths of flexible foil
08/29/2012EP2491582A1 Method for producing vias
08/29/2012EP2491581A2 Super-high density power trench mosfet
08/29/2012EP2491580A2 Semiconductor wafer having scribe lane alignment marks for reducing crack propagation
08/29/2012EP2491579A1 Self-aligned barrier and capping layers for interconnects
08/29/2012EP2491578A1 Stepped masking for patterned implantation
08/29/2012EP2491577A1 Method for forming a dopant profile
08/29/2012EP2491576A1 Method for producing a multilayer film including at least one ultrathin layer of crystalline silicon, and devices obtained by means of said method
08/29/2012EP2491458A2 Methods of making patterned structures of fluorine-containing polymeric materials and fluorine-containing polymers
08/29/2012EP2491425A2 3d-trench electrode detectors
08/29/2012EP2491166A2 Method for the light-induced, galvanic pulsed deposition for forming a seed layer for a metal contact of a solar cell and for the subsequent reinforcement of said seed layer or said metal contact and arrangement for carrying out the method
08/29/2012CN202405243U Automatic material box clamping device used in LED die bonder
08/29/2012CN202405242U Wafer overturning machine
08/29/2012CN202405241U Heat-insulation protection case and heat-insulation protection system with constant-temperature and constant-humidity supply wind source
08/29/2012CN202405240U Semiconductor integrated block automatic plane pin adjuster pin-adjusting guide rail
08/29/2012CN202405239U High-frequency rotation mechanism and lead bonding machine
08/29/2012CN202405238U Movable operation platform of packaging pressing machine
08/29/2012CN202405237U Heat pipe type heat dissipation platform for comprehensive aging system of high power transistor
08/29/2012CN1992293B Thin film transistor array substrate and method for manufacturing the same
08/29/2012CN1979336B Apparatus for transferring a pattern with intermediate stamp
08/29/2012CN1970168B Coating device and method
08/29/2012CN1949539B Nitride read only memory device with buried diffusion spacers and method for making the same
08/29/2012CN1915598B Polishing pad and method of manufacture
08/29/2012CN1839216B Ceramic article having corrosion-resistant layer, semiconductor processing apparatus incorporating same, and method for forming same
08/29/2012CN1823404B Process for producing semiconductor device and substrate treating apparatus
08/29/2012CN1767707B 显示器件 Display Devices
08/29/2012CN102652364A Isolation for nanowire devices
08/29/2012CN102652363A Conductivity improvements for iii-v semiconductor devices
08/29/2012CN102652362A Semiconductor device and process for production thereof
08/29/2012CN102652361A Silicon carbide semiconductor device and method of manufacturing same
08/29/2012CN102652356A Semiconductor device
08/29/2012CN102652355A Wet oxidation process performed on a dielectric material formed from a flowable CVD process
08/29/2012CN102652354A Process for recycling a substrate
08/29/2012CN102652353A Novel gap fill integration
08/29/2012CN102652352A Adjusting substrate temperature to improve CD uniformity
08/29/2012CN102652351A Enhanced passivation process to protect silicon prior to high dose implant strip
08/29/2012CN102652350A Methodology for cleaning of surface metal contamination from an upper electrode used in a plasma chamber
08/29/2012CN102652349A Liquid immersion member, method for manufacturing liquid immersion member, exposure apparatus, and device manufacturing method
08/29/2012CN102652348A On chip integrated inductor and manufacturing method therefor
08/29/2012CN102652347A Bonded wafer manufacturing method