Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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10/10/2012 | CN102723365A TFT (Thin Film Transistor), manufacturing method thereof, array substrate and display device |
10/10/2012 | CN102723364A Semiconductor device |
10/10/2012 | CN102723363A VDMOS device and manufacturing method thereof |
10/10/2012 | CN102723361A Self-aligned-technology-based tri-polycrystal SOI (Silicon On Insulator), SiGe and HBT (Heterojunction Bipolar Transistor) integrated device and preparation method thereof |
10/10/2012 | CN102723359A Thin-film transistor, manufacture method of thin-film transistor, array substrate and display device |
10/10/2012 | CN102723358A Isolated gate field effect transistor and manufacture method thereof |
10/10/2012 | CN102723357A Channel-type silicon carbide Schottky diode and manufacturing method for same |
10/10/2012 | CN102723354A High voltage power LDMOS device and manufacture method thereof |
10/10/2012 | CN102723353A High voltage power LDMOS device and manufacture method thereof |
10/10/2012 | CN102723344A Array substrate, manufacture method of array substrate and liquid crystal display |
10/10/2012 | CN102723343A Crystal plane-based Tri-polycrystal-plane Bi CMOS (Complentary Metal-Oxide-Semiconductor) integrated device and preparation method thereof |
10/10/2012 | CN102723342A Bi CMOS (Complementary Metal-Oxide-Semiconductor) integrated device with mixed crystal plane and vertical channel strain and preparation method thereof |
10/10/2012 | CN102723341A Bi CMOS (Complementary Metal-Oxide-Semiconductor) integrated device with mixed crystal plane and Si vertical channel and preparation method thereof |
10/10/2012 | CN102723340A SOI (Silicon-On-Insulator)-BJT (Bipolar Junction Transistor) double-strain-plane Bi CMOS (Complementary Metal-Oxide-Semiconductor) integrated device and preparation method thereof |
10/10/2012 | CN102723339A SOI (Silicon On Insulator)-BJT (Bipolar Junction Transistor) Bi CMOS (Complementary Metal-Oxide-Semiconductor) integrated device with strain SiGe clip-shaped channel and preparation method thereof |
10/10/2012 | CN102723338A Bi-polycrystal strain SiGe SOI (Silicon On Insulator) Bi CMOS (Complementary Metal-Oxide-Semiconductor) integrated device and preparation method thereof |
10/10/2012 | CN102723337A SOI (Silicon On Insulator) strain SiGe Bi CMOS (Complementary Metal-Oxide-Semiconductor) integrated device and preparation method thereof |
10/10/2012 | CN102723336A Bi-polycrystal SOI (Silicon On Insulator) Bi CMOS (Complementary Metal Oxide Semiconductor) integrated device with SiGe clip-shaped channel and preparation method thereof |
10/10/2012 | CN102723335A Double-strain mixed-crystal-plane SOI (Silicon On Insulator) Bi CMOS (Complementary Metal Oxide Semiconductor) integrated device and preparation method thereof |
10/10/2012 | CN102723334A Metal oxide thin-film transistor substrate, manufacture method thereof and liquid crystal display |
10/10/2012 | CN102723333A Non-volatile memory with P+ floating gate electrode and preparation method thereof |
10/10/2012 | CN102723332A Nano CMOS (Complementary Metal-Oxide-Semiconductor) integrated device with strain Si vertical clip-shaped channel and preparation method thereof |
10/10/2012 | CN102723331A Strain bipolar complementary metal oxide semiconductor (BiCMOS) integrated device based on strain Si return type channel process and preparation method of device |
10/10/2012 | CN102723330A Strain Si BiCMOS (Bipolar Complementary Metal-Oxide-Semiconductor) integrated device and preparation method thereof |
10/10/2012 | CN102723329A High-density submicro high-voltage binary-coded decimal (BCD) semiconductor device and manufacturing method thereof |
10/10/2012 | CN102723323A Structure for assaying plane growth rate of metal nickel silicon compound on hydrazinium and application thereof |
10/10/2012 | CN102723319A Semiconductor wire bonding structure and method |
10/10/2012 | CN102723317A Reliable solder bump coupling within a chip scale package |
10/10/2012 | CN102723314A Insulation TO220AB power device based on aluminum radiating fin and production method |
10/10/2012 | CN102723313A Technological preparation method of SRAM |
10/10/2012 | CN102723312A Method for forming silicon dioxide spacer with uniform thickness |
10/10/2012 | CN102723311A Array substrate measuring method |
10/10/2012 | CN102723310A Array substrate manufacturing method, array substrate and liquid crystal display device |
10/10/2012 | CN102723309A Array substrate and manufacturing method thereof as well as display device |
10/10/2012 | CN102723308A Array substrate, manufacturing method thereof and display device |
10/10/2012 | CN102723307A Preparation method of array substrate and TFT structure |
10/10/2012 | CN102723306A Microwave multi-chip packaging structure using silicon through hole and manufacture method thereof |
10/10/2012 | CN102723305A Processing method and storage medium |
10/10/2012 | CN102723304A Preparation method of N-trap high-voltage gate driving chip for directly driving power device |
10/10/2012 | CN102723303A Air flotation locating platform with X coordinate and Y coordinate |
10/10/2012 | CN102723302A Fully-automatic loading and unloading device used in processing semiconductor chips by laser and application method thereof |
10/10/2012 | CN102723301A Quartz boat for diffusion |
10/10/2012 | CN102723300A Automatic charging device for solar cells |
10/10/2012 | CN102723299A XY precision motion platform capable of suppressing vibration by utilizing piezoelectric ceramic |
10/10/2012 | CN102723298A Electromagnetic preload XY precision motion platform |
10/10/2012 | CN102723297A XY precision motion platform provided with terminal load support and symmetrical structure |
10/10/2012 | CN102723296A XY motion platform driven by double-layer linear motor |
10/10/2012 | CN102723295A Component in processing chamber of substrate processing apparatus and method of measuring temperature of the component |
10/10/2012 | CN102723294A Method for detecting registration between contact hole and polycrystalline silicon gate |
10/10/2012 | CN102723293A Etching-first and packaging-later manufacturing method for chip inversion single-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit |
10/10/2012 | CN102723292A Flip chip double-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip double-faced three-dimensional circuit encapsulation structure |
10/10/2012 | CN102723291A Flip chip double-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip double-faced three-dimensional circuit encapsulation structure |
10/10/2012 | CN102723290A Packaging-first and etching-later manufacturing method for chip formal single-surface three-dimensional circuit and packaging structure of chip formal single-surface three-dimensional circuit |
10/10/2012 | CN102723289A Normal chip single-faced three-dimensional circuit manufacture method by encapsulation prior to etching and normal chip single-faced three-dimensional circuit encapsulation structure |
10/10/2012 | CN102723288A Flip chip single-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip single-faced three-dimensional circuit encapsulation structure |
10/10/2012 | CN102723287A Packaging-first and etching-later manufacturing method for chip formal double-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit |
10/10/2012 | CN102723286A Packaging-first and etching-later manufacturing method for chip formal double-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit |
10/10/2012 | CN102723285A Etching-first and packaging-later manufacturing method for chip formal single-surface three-dimensional circuit and packaging structure of chip formal single-surface three-dimensional circuit |
10/10/2012 | CN102723284A Method for manufacturing front-mounted three-dimensional line on single side of chip by using first etching and later packaging and packaging structure of three-dimensional line |
10/10/2012 | CN102723283A Etching-first and packaging-later manufacturing method for chip formal double-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit |
10/10/2012 | CN102723282A Etching-first and packaging-later manufacturing method for chip formal double-surface three-dimensional circuit and packaging structure of chip formal double-surface three-dimensional circuit |
10/10/2012 | CN102723281A Flip chip double-faced three-dimensional circuit manufacture method by encapsulation prior to etching and flip chip double-faced three-dimensional circuit encapsulation structure |
10/10/2012 | CN102723280A Flip-chip single-face three-dimensional circuit fabrication method by etching-first and packaging-second and packaging structure of flip-chip single-face three-dimensional circuit |
10/10/2012 | CN102723279A Manufacturing method for metal oxide thin film transistor |
10/10/2012 | CN102723278A Semiconductor structure formation method |
10/10/2012 | CN102723277A Fabrication of trench dmos device having thick bottom shielding oxide |
10/10/2012 | CN102723276A Preparation method of printed flexible carbon nanotubes thin film transistor |
10/10/2012 | CN102723275A Method for manufacturing NMOS-based OTP device |
10/10/2012 | CN102723274A Integration method for improving cyclic voltammetry (CV) hysteresis and substrate interface state of Ge channel device |
10/10/2012 | CN102723273A Method for enlarging corrosion defect process window of dry etching of aluminum wire |
10/10/2012 | CN102723272A Method for manufacturing semiconductor |
10/10/2012 | CN102723271A Method for forming silicon dioxide side wall with uniform thickness |
10/10/2012 | CN102723270A Method for flattening surface of flexible material layer |
10/10/2012 | CN102723269A Array base plate, method for manufacturing same, and display device |
10/10/2012 | CN102723268A Method for preparing self-aligned nickel-silicide |
10/10/2012 | CN102723267A Method for manufacturing crystalline silicon solar cell and secondary laser sintering method |
10/10/2012 | CN102723266A Solar battery diffusion method |
10/10/2012 | CN102723265A Aluminum doping method for silicon wafer |
10/10/2012 | CN102723264A Preparation method for substrate with nanometer microstructure |
10/10/2012 | CN102723263A Semi-conductor manufacturing method and power device manufacturing method |
10/10/2012 | CN102723262A Semiconductor capacitor formation method |
10/10/2012 | CN102723261A Semiconductor capacitor formation method |
10/10/2012 | CN102723260A Method for growing self-liftoff nitride semiconductor material |
10/10/2012 | CN102723259A UV-LIGA (Ultraviolet-Lithografie, Galvanoformung, Abformung) method for manufacturing multi layers of mini-type inductance coils on silicon substrate |
10/10/2012 | CN102723258A Method for preparing structured graphene by taking SiC as substrate |
10/10/2012 | CN102723257A Substrate processing apparatus and substrate processing method |
10/10/2012 | CN102723256A Silicon wafer cleaning machine spray water heating device |
10/10/2012 | CN102723252A Ion implantation method and ion implantation apparatus |
10/10/2012 | CN102722089A Non-contact coarse-motion and fine-motion cascading SDOF (six-degree of freedom) positioning device |
10/10/2012 | CN102722086A Non-contact single-degree-of-freedom positioning device and synchronous movement control method thereof |
10/10/2012 | CN102722082A Mask and overlay measuring method |
10/10/2012 | CN102722058A Liquid crystal array substrate, manufacturing method and repair method of liquid crystal array substrate |
10/10/2012 | CN102722057A Pixel array substrate, liquid crystal display device and method for repairing pixel array substrate |
10/10/2012 | CN102722056A A color light-filtering array base plate, a manufacture method thereof, and a liquid-crystal display panel |
10/10/2012 | CN102719893A Method for preparing p-type zinc oxide material |
10/10/2012 | CN102719887A Method for growing high-quality gallium nitride epitaxial film on basis of gallium nitride substrate |
10/10/2012 | CN102719806A Deposition device |
10/10/2012 | CN102718207A Preparation method of structured grapheme based on Cu membrane annealing and Cl2 reaction |
10/10/2012 | CN102717469A Method of resin molding and resin molding apparatus |
10/10/2012 | CN102717392A Multifunctional clamp for component encapsulating robot |