Patents
Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133)
08/2006
08/17/2006WO2006086580A2 System and method for dynamic checking
08/17/2006US20060181932 Device and method for pulse width control in a phase change memory device
08/17/2006DE102006005674A1 Anti fuse circuit for forming internal connections has gate electrode and field control unit to apply separate electrical fields to two transition regions
08/16/2006EP1691373A1 ROM-device and programming method
08/16/2006CN1270244C Memory and memory access limiting method
08/15/2006US7092273 Low voltage non-volatile memory transistor
08/15/2006US7091564 Semiconductor chip with fuse unit
08/15/2006US7091067 Current limiting antifuse programming path
08/10/2006US20060176750 Circuit and method for reading an antifuse
08/10/2006US20060176724 Phase change memory device
08/09/2006CN1815630A Semiconductor memory device
08/09/2006CN1269139C Semiconductor memory
08/08/2006US7089136 Method for reduced electrical fusing time
08/08/2006US7087974 Semiconductor integrated circuit including anti-fuse and method for manufacturing the same
08/03/2006WO2006079215A1 Magnetic memory composition and method of manufacture
08/03/2006US20060171229 Semiconductor device
08/03/2006US20060171228 Semiconductor device
08/03/2006CA2596128A1 Magnetic memory composition and method of manufacture
08/02/2006EP1685571A2 A method circuit and system for determining a reference voltage
08/01/2006US7085182 Fuse blowing interface for a memory chip
08/01/2006US7085181 Semiconductor device having storage circuit which stores data in nonvolatile manner by using fuse element
08/01/2006US7085158 Nonvolatile semiconductor memory device and one-time programming control method thereof
08/01/2006US7085154 Device and method for pulse width control in a phase change memory device
08/01/2006US7085149 Method and apparatus for reducing leakage current in a read only memory device using transistor bias
08/01/2006US7084696 Circuits associated with fusible elements for establishing and detecting of the states of those elements
08/01/2006US7084007 Fabrication and assembly structures and methods for memory devices
07/2006
07/27/2006WO2006078505A2 A non-volatile memory cell comprising a dielectric layer and a phase change material in series
07/27/2006US20060164906 Semiconductor integrated circuit and IC card
07/27/2006DE10214529B4 ROM-Speicheranordnung ROM memory device
07/26/2006EP1684309A1 Transistor antifuse device
07/26/2006EP1683161A2 Stress assisted current driven switching for magnetic memory applications
07/26/2006EP1683160A2 A method circuit and system for read error detection in a non-volatile memory array
07/26/2006CN1266761C Self-timed and self-tested fuse blow
07/25/2006US7082045 Offset compensated sensing for magnetic random access memory
07/20/2006WO2006017416A3 Programmable semi-fusible link read only memory and method of margin testing same
07/20/2006US20060158951 Nonvolatile semiconductor memory device with wired-or structure blocking data transmission from defective page buffer
07/20/2006US20060158920 Electrical fuse circuit
07/20/2006US20060157775 Byte-operational nonvolatile semiconductor memory device
07/18/2006US7079418 Semiconductor storage apparatus and microcomputer having the same
07/18/2006US7079412 Programmable MOS device formed by stressing polycrystalline silicon
07/13/2006US20060152991 Non-volatile memory storage of fuse information
07/13/2006US20060152990 Multiple-time electrical fuse programming circuit
07/13/2006US20060152975 Multiple use memory chip
07/13/2006US20060152959 Multi-time programmable semiconductor memory device and multi-time programming method therefor
07/13/2006US20060152958 ROM memory cell having defined bit line voltages
07/13/2006DE102005062022A1 Halbleiterbauelement mit Schmelzsicherung Semiconductor component with fuse
07/11/2006US7075848 Redundancy circuit in semiconductor memory device having a multiblock structure
07/11/2006US7075843 Sense amplifier for mask read only memory
07/11/2006US7075835 Redundancy control circuit which surely programs program elements and semiconductor memory using the same
07/11/2006US7075809 Memory cell structure of metal programmable read only memory having bit cells with a shared transistor cell
07/11/2006US7075675 Memory management apparatus and communication apparatus
07/06/2006WO2006012137A3 Reduced area, reduced programming voltage cmos efuse-based scannable non-volatile memory bitcell
07/06/2006US20060146620 Semiconductor memory having a spare memory cell
07/06/2006US20060146617 Programming and evaluating through PMOS injection
07/06/2006US20060146587 Method for eliminating crosstalk in a metal programmable read only memory
07/06/2006DE112004001527T5 Verfahren und Lasersysteme zur Verbindungsbearbeitung unter Verwendung von Laserimpulsen mit speziell zugeschnittenen Leistungsprofilen The method and laser systems for call processing using laser pulses with specially tailored power profiles
07/05/2006EP1254367A4 Structure identification methods using mass measurements
07/05/2006EP1252126A4 Nonredundant split/pool synthesis of combinatorial libraries
07/05/2006CN1797605A Semiconductor device
07/05/2006CN1263135C Integrated circuit and mfg. method thereof
07/04/2006US7072241 Semiconductor memory device and multi-chip module comprising the semiconductor memory device
07/04/2006US7072210 Memory array
07/04/2006US7071729 Dual-purpose shift register
06/2006
06/29/2006US20060141679 Vertically stacked field programmable nonvolatile memory and method of fabrication
06/29/2006US20060139985 Non-volatile semiconductor storage device performing ROM read operation upon power-on
06/29/2006DE10112281B4 Leseverstärkeranordnungen für eine Halbleiterspeichereinrichtung Sense amplifier arrangement for a semiconductor memory device
06/28/2006CN1262015C Ultra-late programming ROM and method of manufacture
06/22/2006US20060134837 Vertically stacked field programmable nonvolatile memory and method of fabrication
06/22/2006US20060133175 RFID tags with electronic fuses for storing component configuration data
06/22/2006US20060133161 Memory with storage cells biased in groups
06/22/2006US20060133128 Method and storage device for the permanent storage of data
06/22/2006US20060133127 Nonvolatile semiconductor memory device to which information can be written only once
06/21/2006EP1031992B1 Flash EEPROM system
06/20/2006US7064973 Combination field programmable gate array allowing dynamic reprogrammability
06/20/2006US7064628 Crossbar switch
06/15/2006US20060126373 Three-state memory cell
06/14/2006DE102004056459A1 ROM cell of ROM memory provides first given potential or second given potential in accessed state cell output depending on programming condition of ROM cell
06/13/2006US7061304 Fuse latch with compensated programmable resistive trip point
06/08/2006US20060123299 Semiconductor integrated circuit and a method of testing the same
06/08/2006US20060121650 Method and apparatus for circuit completion through the use of ball bonds or other connections during the formation of a semiconductor device
06/08/2006US20060120186 Semiconductor memory device with shift redundancy circuits
06/08/2006US20060120158 Non-volatile semiconductor memory device adapted to store a multi-valued in a single memory cell
06/08/2006US20060120133 Semiconductor ROM device and manufacturing method thereof
06/07/2006CN1783342A System and method for achieving reliable WORM storage using WMRM storage
06/06/2006US7057947 Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used
06/06/2006US7057941 Three-state memory cell
06/06/2006US7057916 Small size ROM
06/06/2006US7057258 Resistive memory device and method for making the same
06/01/2006US20060114718 Nonvolatile semiconductor memory device which stores multi-value information
06/01/2006US20060114708 Semiconductor memory device
06/01/2006DE102004020306B4 Verfahren zum Programmieren einer Speicheranordnung und programmierte Speicheranordnung A method for programming a memory array and programmed memory device
05/2006
05/30/2006US7054180 Method and circuit for adjusting a resistance in an integrated circuit
05/24/2006DE102004053574A1 Data storage method for permanent storage of data uses multiple memory cells addressed by word/bit lines with non-inverted/inverted allocation of memory cell conditions
05/23/2006US7050354 Low-power compiler-programmable memory with fast access timing
05/18/2006WO2002041323A8 Circuit arrangement
05/18/2006US20060104105 Method of determining optimal voltages for operating two-side non-volatile memory and the operating methods
05/18/2006US20060104104 Methods for accelerated erase operations in non-volatile memory devices and related devices
05/17/2006EP1657722A1 Integrated circuit chip having non-volatile on-chip memories for providing programmable functions and features
05/16/2006US7046573 Semiconductor integrated circuit and IC card
05/16/2006US7046569 Semiconductor integrated circuit device including OTP memory, and method of programming OTP memory
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