Patents for G11C 17 - Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards (10,133) |
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02/14/2006 | US7000160 Semiconductor integrated circuit and a method of testing the same |
02/14/2006 | US6999351 Computer systems, processes for turning a SRAM cell off, and processes for writing a SRAM cell and processes for reading data from a SRAM cell |
02/14/2006 | US6999334 System and method for determining the logic state of a memory cell in a magnetic tunnel junction memory device |
02/14/2006 | US6999333 Method and apparatus for assessing one-time programmable cells |
02/14/2006 | US6998878 Semiconductor integrated circuit and semiconductor logic circuit used in the integrated circuit |
02/09/2006 | US20060028895 Silver island anti-fuse |
02/09/2006 | US20060028894 Programmable semi-fusible link read only memory and method of margin testing same |
02/09/2006 | US20060028878 Programming and evaluating through PMOS injection |
02/09/2006 | US20060028854 Charge pump circuit |
02/09/2006 | CA2575557A1 Prognosis of breast cancer patients |
02/08/2006 | CN1241205C Address generating circuit |
02/07/2006 | US6996475 Computer software products for nucleic acid hybridization analysis |
02/07/2006 | US6996023 Semiconductor memory device capable of reducing current consumption in active mode |
02/07/2006 | US6996021 ROM embedded DRAM with bias sensing |
02/07/2006 | US6995601 Fuse state detection circuit |
02/02/2006 | WO2006012137A2 Reduced area, reduced programming voltage cmos efuse-based scannable non-volatile memory bitcell |
02/02/2006 | US20060023549 Fuse data storage system using core memory |
02/01/2006 | CN1240132C Memory device mfg. and assembling structure and method |
01/31/2006 | US6992948 Memory device having address generating circuit using phase adjustment by sampling divided clock to generate address signal of several bits having one bit changed in sequential order |
01/31/2006 | US6992945 Fuse circuit |
01/31/2006 | US6992941 Semiconductor memory device |
01/31/2006 | US6992932 Method circuit and system for read error detection in a non-volatile memory array |
01/31/2006 | US6992925 High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline |
01/31/2006 | US6992909 Multi-bit ROM cell, for storing one of n>4 possible states and having bi-directional read, an array of such cells, and a method for making the array |
01/31/2006 | US6992359 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
01/31/2006 | US6991970 Method and apparatus for circuit completion through the use of ball bonds or other connections during the formation of semiconductor device |
01/26/2006 | US20060018153 Operating array cells with matched reference cells |
01/25/2006 | EP1123556B1 Fuse circuit having zero power draw for partially blown condition |
01/24/2006 | US6990018 Non-volatile semiconductor memory device, electronic card using the same and electronic apparatus |
01/24/2006 | US6989707 Semiconductor circuit and initialization method |
01/19/2006 | US20060013032 Nonvolatile semiconductor storage device |
01/19/2006 | US20060012458 Fuse structure |
01/18/2006 | CN1723508A One-time programmable memory device |
01/17/2006 | US6987703 Nonvolatile semiconductor storage device and write time determining method therefor |
01/17/2006 | US6987297 Semiconductor memory device and manufacturing method thereof |
01/12/2006 | US20060007724 Double-cell memory device |
01/12/2006 | US20060007723 Electro-optical device, signal processing circuit thereof, signal processing method thereof and electronic apparatus |
01/12/2006 | DE19727378B4 Leseverstärker eines Halbleiterspeicher-Bauelements Sense amplifier of a semiconductor memory device |
01/11/2006 | EP1614120A1 Magnetic memory cell including a fuse element for disconnecting the defective magnetic element |
01/11/2006 | CN1720591A Programmable non-volatile semiconductor memory device |
01/10/2006 | US6985387 System and method for one-time programmed memory through direct-tunneling oxide breakdown |
01/10/2006 | US6984548 Method of making a nonvolatile memory programmable by a heat induced chemical reaction |
01/05/2006 | US20060002227 Fuse box, semiconductor memory device having the same and setting method thereof |
01/05/2006 | US20060002212 Semiconductor device |
01/05/2006 | US20060002167 Minimizing adjacent wordline disturb in a memory device |
01/05/2006 | DE10126567B4 Integrierte Schaltung Integrated circuit |
01/04/2006 | CN1235289C Fuse circuit used for semiconductor integrated circuit |
01/03/2006 | US6983404 Method and apparatus for checking the resistance of programmable elements |
01/03/2006 | US6982903 Field effect devices having a source controlled via a nanotube switching element |
12/29/2005 | WO2005117114A3 Programming semiconductor dies for pin map compatibility |
12/29/2005 | WO2005082061A3 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
12/29/2005 | US20050286336 Flash EEprom system |
12/29/2005 | US20050286332 Reduced area, reduced programming voltage CMOS eFUSE-based scannable non-volatile memory bitcell |
12/29/2005 | US20050285663 Static, low-voltage fuse-based cell with high-voltage programming |
12/29/2005 | US20050285223 Fuse structure |
12/28/2005 | EP1046121B1 Automatic test process with non-volatile result table store |
12/28/2005 | CN1714403A Using a MOS select gate for a phase change memory |
12/27/2005 | US6981237 Command user interface with programmable decoder |
12/27/2005 | US6980465 Addressing circuit for a cross-point memory array including cross-point resistive elements |
12/27/2005 | US6980457 Thyristor-based device having a reduced-resistance contact to a buried emitter region |
12/27/2005 | US6980456 Memory with low and fixed pre-charge loading |
12/27/2005 | US6980455 Remote sensed pre-amplifier for cross-point arrays |
12/22/2005 | WO2005098867A3 Rewriteable electronic fuses |
12/22/2005 | US20050281102 Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling |
12/22/2005 | US20050281101 Semiconductor structure processing using multiple laterally spaced laser beam spots with on-axis offset |
12/22/2005 | US20050281072 Non-volatile, high-density integrated circuit memory |
12/22/2005 | US20050281069 Computer systems, processes for turning a SRAM cell off, and processes for writing a SRAM cell |
12/22/2005 | US20050280495 Fuse-data reading circuit |
12/22/2005 | DE4344293B4 Sensorcharakteristik-Abgleichschaltung zum Abgleichen der Ausgangscharakteristik eines Halbleitersensors Sensor characteristic adjustment circuit for matching the output characteristics of a semiconductor sensor |
12/20/2005 | US6977852 ROM-based controller monitor in a memory device |
12/20/2005 | US6977836 Memory device that can be irreversibly programmed electrically |
12/20/2005 | CA2269857C Memory element with energy control mechanism |
12/15/2005 | WO2005119779A1 Memory device and manufacturing method of the same |
12/15/2005 | US20050276089 Plateline voltage pulsing to reduce storage node disturbance in ferroelectric memory |
12/15/2005 | US20050274966 Fuse and write method for fuse |
12/14/2005 | CN1707697A Method for programming a memory arrangement and programmed memory arrangement |
12/14/2005 | CN1231922C Shaded ROM and internal storage containing the same |
12/13/2005 | US6975528 Read only memory device |
12/08/2005 | WO2005117114A2 Programming semiconductor dies for pin map compatibility |
12/08/2005 | WO2005116720A1 Mems device having time-varying control |
12/08/2005 | WO2005041107A3 A method circuit and system for determining a reference voltage |
12/08/2005 | US20050270879 No-precharge FAMOS cell and latch circuit in a memory device |
12/08/2005 | US20050270833 Reading circuit for reading a memory cell |
12/08/2005 | US20050270820 Molecular memory |
12/08/2005 | US20050270085 Method and circuit for fuse programming and endpoint detection |
12/08/2005 | US20050269646 Memory |
12/08/2005 | DE19730762B4 Flash-Speicherzelle und Verfahren zu deren Herstellung Flash memory cell and method for producing them |
12/08/2005 | DE102004021541A1 Passivierung von Brennstrecken Passivation of focal distances |
12/06/2005 | US6973629 Circuit arrangement |
12/06/2005 | US6972614 Circuits associated with fusible elements for establishing and detecting of the states of those elements |
12/06/2005 | US6972613 Fuse latch circuit with non-disruptive re-interrogation |
12/06/2005 | US6972612 Semiconductor device with malfunction control circuit and controlling method thereof |
12/06/2005 | US6972587 Built-in self repair for an integrated circuit |
11/30/2005 | EP1008183B1 Memory location arrangement and method for producing the same |
11/30/2005 | CN1229806C Storage unit read-out based on non-continuous property |
11/29/2005 | US6970394 Programming method for electrical fuse cell and circuit thereof |
11/29/2005 | US6970370 Ferroelectric write once read only memory for archival storage |
11/24/2005 | WO2005059953A3 Solid state magnetic memory system and method |
11/24/2005 | US20050259495 Multiple-time programmable resistance circuit |
11/24/2005 | US20050258861 Programming semiconductor dies for pin map compatibility |