Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2005
08/18/2005US20050180213 NAND-structured flash memory
08/18/2005US20050180212 Non-volatile semiconductor memory device
08/18/2005US20050180211 Novel multi-state memory
08/18/2005US20050180210 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
08/18/2005US20050180209 Method of managing a multi-bit-cell flash memory
08/18/2005US20050180189 Memory device electrode with a surface structure
08/18/2005US20050180188 Phase-change memory device with overvoltage protection and method for protecting a phase-change memory device against overvoltages
08/18/2005US20050180186 Shield plate for limiting cross coupling between floating gates
08/18/2005US20050179095 Non-volatile memory cell
08/18/2005US20050179079 Nor-type channel-program channel-erase contactless flash memory on SOI
08/18/2005US20050178846 Data storage device incorporating a two-dimensional code
08/18/2005DE60013044T2 Fehlerdetektion und -korrektur Schaltung in eimem Flash-Speicher Error detection and correction circuit in the flash memory eimem
08/18/2005DE10297786T5 Programmierung eines Phasenübergangsmaterialspeichers Programming a phase change material storage
08/18/2005DE102004039235A1 Read operation performing method for use in memory cell string, involves applying write sense current across magnetic random access memory cell, and determining whether one voltage across string differs from another voltage
08/18/2005CA2540365A1 Memory interface controller
08/17/2005EP1564887A1 Time limit function utilization apparatus
08/17/2005EP1564754A2 Method and device for managing data in a non-volatile memory
08/17/2005EP1564753A1 Nand-type non-volatile memory cell and method for operating same
08/17/2005EP1564752A1 Multi-level memory
08/17/2005EP1564747A1 Semiconductor memory device comprising simultaneous block activation means and method of testing semiconductor memory device
08/17/2005EP1563507A1 Cascode amplifier circuit for producing a fast, stable and accurate bit line voltage
08/17/2005CN2718679Y Integrating device for computer point displacement control and data access
08/17/2005CN1656614A Dense array structure for non-volatile semiconductor memories
08/17/2005CN1656567A Method of erasing a flashing memory using a pre-erasing step
08/17/2005CN1656566A Device for reducing the effects of leakage current within electronic devices
08/17/2005CN1656433A Providing in package power supplies for integrated circuits
08/17/2005CN1655633A Mobile communicator, its memory device and access flow process
08/17/2005CN1655360A Electronic circuit, system, nonvolatile memory and operating method thereof
08/17/2005CN1655358A Storage device
08/17/2005CN1655357A Semiconductor memory device and method for making same
08/17/2005CN1655282A Nonvolatile semiconductor memory devices
08/17/2005CN1655281A Bias voltage applying circuit and semiconductor memory device
08/17/2005CN1655266A Data storage device
08/16/2005US6931498 Status register architecture for flexible read-while-write device
08/16/2005US6931480 Method and apparatus for refreshing memory to preserve data integrity
08/16/2005US6930954 Non-volatile semiconductor memory device
08/16/2005US6930928 Method of over-erase prevention in a non-volatile memory device and related structure
08/16/2005US6930927 Line selector for a matrix of memory elements
08/16/2005US6930926 Method for erasing a flash EEPROM
08/16/2005US6930925 Suspend-resume programming method for flash memory
08/16/2005US6930924 Nonvolatile memory and method of programming the same memory
08/16/2005US6930923 Flash memory capable of utilizing one driving voltage output circuit to drive a plurality of word line drivers
08/16/2005US6930922 Reading circuit, reference circuit, and semiconductor memory device
08/16/2005US6930921 NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages
08/16/2005US6930919 NAND-type flash memory device having array of status cells for storing block erase/program information
08/16/2005US6930917 Programming an electronic device including a non-volatile memory, in particular for adjusting the features of an oscillator
08/16/2005US6930916 High speed low voltage driver
08/16/2005US6930909 Memory device and methods of controlling resistance variation and resistance profile drift
08/16/2005US6930536 Voltage booster
08/16/2005US6930348 Dual bit split gate flash memory
08/16/2005US6930343 Nonvolatile memory device utilizing a vertical nanotube
08/16/2005US6930003 Method of manufacturing semiconductor device
08/16/2005US6930002 Method for programming single-poly EPROM at low operation voltages
08/16/2005US6929993 Methods of forming memory cells and arrays having underlying source-line connections
08/16/2005CA2317765C A microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors
08/16/2005CA2262995C Non-contact integrated circuit comprising a charge pump
08/11/2005WO2005073981A1 Programming non-volatile memory
08/11/2005WO2005073980A1 Charge packet metering for coarse /fine programming of non-volatile memory
08/11/2005WO2005073979A1 Non-volatile memory cell using high-k material and inter-gate programming
08/11/2005WO2005073978A1 Method of reading nand memory to compensate for coupling between storage elements
08/11/2005WO2005073977A2 Variable current sinking for coarse/fine programming of non-volatile memory
08/11/2005WO2005073975A2 Efficient verification for coarse/fine programming of non-volatile memory
08/11/2005WO2005072472A2 Method of manufacturing non-volatile dram
08/11/2005US20050175318 Editting apparatus and editting method
08/11/2005US20050174868 Nonvolatile semiconductor memory device
08/11/2005US20050174862 Semiconductor memory device and method of testing semiconductor memory device
08/11/2005US20050174859 Bias voltage applying circuit and semiconductor memory device
08/11/2005US20050174857 Nonvolatile memory controlling method and nonvolatile memory controlling apparatus
08/11/2005US20050174856 Program correction methods and devices using the same
08/11/2005US20050174855 Method for erasing an NROM cell
08/11/2005US20050174854 Memory device
08/11/2005US20050174853 Two-phase programming of a flash memory
08/11/2005US20050174852 Self-boosting system for flash memory cells
08/11/2005US20050174851 Nonvolatile memory cell with multiple floating gates formed after the select gate
08/11/2005US20050174850 Method for erasing an NROM cell
08/11/2005US20050174849 Method of remapping flash memory
08/11/2005US20050174845 Semiconductor device
08/11/2005US20050174844 Multi-bit-per-cell flash EEPROM memory with refresh
08/11/2005US20050174843 Semiconductor memory device having memory cells with floating gates and memory cell threshold voltage control method
08/11/2005US20050174842 EEPROMS using carbon nanotubes for cell storage
08/11/2005US20050174840 Memory device
08/11/2005US20050174709 Method and apparatus for adjusting a load
08/11/2005US20050173751 Semiconductor memory device
08/11/2005US20050173540 System and method of authentifying
08/11/2005DE10324612B4 Halbleiterspeicher mit Charge-Trapping-Speicherzellen und Virtual-Ground-Architektur Semiconductor memory having charge trapping memory cells and virtual ground architecture
08/11/2005DE102004063581A1 Halbleiterelement Semiconductor element
08/11/2005DE102004060712A1 Datenspeichervorrichtung The data storage device
08/11/2005DE102004026811A1 Semiconductor element comprises a matrix unit with gaps running in one direction, a doped source/drain region, and a storage layer
08/10/2005EP1562201A2 Bias voltage applying circuit and semiconductor memory device
08/10/2005EP1562200A2 Nonvolatile semiconductor memory device
08/10/2005EP1562122A2 Method of remapping flash memory
08/10/2005EP1562121A2 Data management apparatus and method used for flash memory
08/10/2005EP1561222A2 A combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
08/10/2005EP1008041B1 Processor with embedded in-circuit programming structures
08/10/2005EP0997913B1 Method and circuit for testing virgin memory cells in a multilevel memory device
08/10/2005CN1653616A Flash memory cell and fabrication method
08/10/2005CN1653554A Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
08/10/2005CN1653494A System and method of authentifying
08/10/2005CN1652670A Low thickness memory device with USB interface connecting unit
08/10/2005CN1652338A Trap read only non-volatile memory (TROM)