Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
11/2005
11/03/2005US20050242391 Two bit/four bit SONOS flash memory cell
11/03/2005US20050242388 Flash memory cell, flash memory device and manufacturing method thereof
11/03/2005US20050242337 Switching device for reconfigurable interconnect and method for making the same
11/03/2005DE10327284B4 Prüflesevorrichtung für Speicher Check reader for memory
11/03/2005DE102004015890A1 Memory system for e.g. laptop computer, has set of volatile memory modules and one nonvolatile memory module that stores identifiers, which indicate assignment of volatile memory modules` characteristics in set of volatile memory modules
11/02/2005EP1592024A2 Operation scheme with charge balancing erase for charge trapping non-volatile memory
11/02/2005EP1590811A1 System and method for programming cells in non-volatile integrated memory devices
11/02/2005EP1590810A2 Improved method for reading a non-volatile memory cell adjacent to an inactive region of a non-volatile memory cell array
11/02/2005CN2738357Y Program storing circuit
11/02/2005CN1692452A Semiconductor device and method of controlling the semiconductor device
11/02/2005CN1692451A Semiconductor memory device and method for controlling semiconductor memory device
11/02/2005CN1692450A Non-volatile memory and write method of the same
11/02/2005CN1692448A Method of recovering overerased bits in a memory device
11/02/2005CN1692327A Automatic power savings stand-by control for non-volatile memory
11/02/2005CN1691338A Nonvolatile memory element
11/02/2005CN1691333A Memory device including a dielectric multilayer structure and method of fabricating the same
11/02/2005CN1691331A Semiconductor integrated circuit element
11/02/2005CN1691207A Circuit and method for preventing non-volatile memory from over-erasing
11/02/2005CN1691206A Non-volatile semiconductor storage device
11/02/2005CN1691205A Minitype EEPROM matrix structure
11/02/2005CN1225741C Adjusting device and method for flash memory array after erasion
11/02/2005CN1225740C Circuit and method for adjusting current level of flash memory reference unit
11/01/2005US6961890 Dynamic variable-length error correction code
11/01/2005US6961805 Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous reading writing or erasure
11/01/2005US6961279 Floating gate nonvolatile memory circuits and methods
11/01/2005US6961277 Method of refreshing a PCRAM memory device
11/01/2005US6961274 Sense amplifier
11/01/2005US6961269 Memory device having data paths with multiple speeds
11/01/2005US6961268 Nonvolatile semiconductor memory device with MOS transistors each having a floating gate and a control gate
11/01/2005US6961267 Method and device for programming cells in a memory array in a narrow distribution
11/01/2005US6961266 Method of programming/reading multi-level flash memory using sensing circuit
11/01/2005US6960805 Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell
11/01/2005CA2284681C Transmission and reception of television programmes and other data
10/2005
10/27/2005WO2005101424A1 Variable programming of non-volatile memory
10/27/2005WO2005101423A1 Sector protection circuit and sector protection method for non-volatile semiconductor storage device, and non-volatile semiconductor storage device
10/27/2005WO2005101422A2 Non-volatile memory array
10/27/2005WO2005101420A1 Thin film memory device having a variable resistance
10/27/2005US20050240721 Flash memory management method that is resistant to data corruption by power loss
10/27/2005US20050240720 Microcomputer with built-in flash memory
10/27/2005US20050239250 Ultra dense non-volatile memory array
10/27/2005US20050239245 Nonvolatile semiconductor memory and method of operating the same
10/27/2005US20050237842 Semiconductor integrated circuit device
10/27/2005US20050237840 Rewriteable electronic fuses
10/27/2005US20050237829 Non-volatile semiconductor memory device
10/27/2005US20050237826 Nonvolatile semiconductor memory device
10/27/2005US20050237825 Data processing apparatus
10/27/2005US20050237824 Semiconductor memory device including floating gates and control gates, control method for the same, and memory card including the same
10/27/2005US20050237817 Semiconductor memory device with MOS transistors, each having a floating gate and a control gate, and memory card including the same
10/27/2005US20050237816 Operation scheme for spectrum shift in charge trapping non-volatile memory
10/27/2005US20050237815 Operation scheme with charge balancing erase for charge trapping non-volatile memory
10/27/2005US20050237814 Non-volatile memory and control with improved partial page program capability
10/27/2005US20050237813 Method and system for self-convergent erase in charge trapping memory cells
10/27/2005US20050237810 Sense amplifier for a non-volatile memory device
10/27/2005US20050237809 Operation scheme with high work function gate and charge balancing for charge trapping non-volatile memory
10/27/2005US20050237808 Semiconductor memory device with MOS transistors, each including floating gate and control gate, and memory card including the same
10/27/2005US20050237807 Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
10/27/2005US20050237806 Circuit and method for detecting skew of transistor in semiconductor device
10/27/2005US20050237805 Semiconductor non-volatile storage device
10/27/2005US20050237804 Chip protection register unlocking
10/27/2005US20050237803 Nonvolatile memory and method of programming the same memory
10/27/2005US20050237802 Device for controlling electric actuators, with automatic current measurement offset compensation, and relative operation method
10/27/2005US20050237801 Operation scheme with charge balancing for charge trapping non-volatile memory
10/27/2005US20050237800 Sector protection circuit for non-volatile semiconductor memory, sector protection method and non-volatile semiconductor memory
10/27/2005US20050237799 Nonvolatile semiconductor memory
10/27/2005US20050237798 Nonvolatile semiconductor memory device and method of rewriting data thereof
10/27/2005US20050237797 Memory array
10/27/2005US20050237783 Electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage
10/27/2005US20050237781 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
10/27/2005US20050237777 Nonvolatile memory device and method for fabricating the same
10/27/2005US20050236662 Flash memory device and method for fabricating the same, and programming and erasing method thereof
10/27/2005DE102005014815A1 Semiconductor memory device e.g. dynamic RAM, data reading method for e.g. PDA, involves concurrently transferring data from pair of buffers to host, and transferring another data from page buffers into another pair of buffers
10/27/2005DE102005006131A1 Load adjustment circuit for non-volatile memory array e.g. erasable programmable ROM, has control unit enabled to decrease power supplied to load if power supplied to load is greater than maximum threshold
10/27/2005DE102004017768B3 Elektrisch programmierbare Speicherzelle und Verfahren zum Programmieren und Auslesen einer solchen Speicherzelle An electrically programmable memory cell and method for programming and reading such a memory cell,
10/27/2005DE102004015928A1 Schreib-/Lösch-Verfahren für resistiv schaltende Speicherbauelemente Write / erase method for resistive switching memory devices
10/27/2005DE102004015868A1 Rekonstruktion der Signalzeitgebung in integrierten Schaltungen Reconstruction of the signal timing in integrated circuits
10/27/2005DE102004014965A1 Memory cell production method for a non-volatile memory cell has a solid-state electrolyte area as a memory element activated by building in a fundamental rule
10/26/2005EP1588379A1 Non-volatile semiconductor memory with large erase blocks storing cycle counts
10/26/2005EP1588378A1 Column-decoding and precharging in a flash memory device
10/26/2005EP1588374A2 Floating gate analog voltage feedback circuit
10/26/2005EP1588320A2 Method for counting beyond endurance limitations of non-volatile memories
10/26/2005CN1689162A High-density NROM-FINFET
10/26/2005CN1689159A Semiconductor integrated circuit device and method for controlling semiconductor integrated circuit device
10/26/2005CN1689117A Memory
10/26/2005CN1689116A Flash memory and memory control method
10/26/2005CN1689115A Flash memory architecture with page mode erase using NMOS and PMOS row decoding scheme
10/26/2005CN1224976C Booster circuit
10/26/2005CN1224975C Coupling circuit for preventing collapse of grid contact face in flash memory and its storae circuit
10/26/2005CN1224895C Method of programmatic quick flashing storage element
10/25/2005US6958940 Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array
10/25/2005US6958939 Flash memory cell having multi-program channels
10/25/2005US6958938 Data writing method for semiconductor memory device and semiconductor memory device
10/25/2005US6958936 Erase inhibit in non-volatile memories
10/25/2005US6958935 Nonvolatile semiconductor memory with X8/X16 operation mode using address control
10/25/2005US6958510 Process for fabricating a dual charge storage location memory cell
10/25/2005US6958271 Method of fabricating a dual-level stacked flash memory cell with a MOSFET storage transistor
10/20/2005WO2005098952A1 Semiconductor storage
10/20/2005WO2005098867A2 Rewriteable electronic fuses
10/20/2005WO2005098866A1 Rewriteable electronic fuses
10/20/2005WO2005098865A2 Rewriteable electronic fuses
10/20/2005WO2005098864A2 Circuit for accessing a chalcogenide memory array
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