Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2005
06/02/2005US20050117400 System and method for programming cells in non-volatile integrated memory devices
06/02/2005US20050117399 Flash memory devices and methods for programming the same
06/02/2005US20050117397 Method of driving a non-volatile memory
06/02/2005US20050117396 Semiconductor storage apparatus and microcomputer having the same
06/02/2005US20050117395 Method for operating a memory device
06/02/2005US20050117388 Write driver circuit in phase change memory device and method for applying write current
06/02/2005US20050117387 Phase-change memory and method having restore function
06/02/2005US20050117381 Current difference divider circuit
06/02/2005US20050117380 FeRAM having single ended sensing architecture
06/02/2005US20050117378 Nonvolatile memory device for preventing bitline high voltage from discharge
06/02/2005US20050116286 Non-volatile two transistor semiconductor memory cell and method for producing the same
06/02/2005US20050116281 Multilayered dual bit memory device with improved write/erase characteristics and method of manufacturing
06/02/2005US20050116262 Method for programming P-channel EEPROM
06/02/2005DE10352785A1 Speichertransistor und Speichereinheit mit asymmetrischem Kanaldotierbereich Memory transistor and memory unit with asymmetrical Kanaldotierbereich
06/02/2005DE10345520A1 Charge-Trapping-Speicherzelle und Verfahren zum Betrieb einer Charge-Trapping-Speicherzelle Charge-trapping memory cell and method for operating a charge-trapping memory cell
06/02/2005DE102004030172A1 Manufacture of flash memory device e.g. NAND type flash memory device, involves etching conductive layers and dielectric layers in single etch apparatus using hard mask layer as mask, where a control gate and a floating gate are formed
06/01/2005EP1535336A2 High-density nrom-finfet
06/01/2005EP1535285A1 Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
06/01/2005EP1245030B1 Memory device
06/01/2005CN1623206A Noise reduction technique for transistors and small devices utilizing an episodic agitation
06/01/2005CN1622333A Memory cell and forming method thereof
06/01/2005CN1204627C Semiconductor component and semiconductor storage
06/01/2005CN1204561C Memory having plurality of threshold level in memory cell
06/01/2005CN1204497C Dual-ported cams for simultaneous operation flash memory
05/2005
05/31/2005US6901420 Method and apparatus for performing packed shift operations
05/31/2005US6901010 Erase method for a dual bit memory cell
05/31/2005US6901009 Booster circuit for non-volatile semiconductor memory device
05/31/2005US6901008 Flash memory with RDRAM interface
05/31/2005US6901006 Semiconductor integrated circuit device including first, second and third gates
05/31/2005US6900517 Non-volatile memory with phase-change recording layer
05/31/2005US6900499 Non-volatile memory and semiconductor device
05/31/2005US6900468 Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices
05/31/2005US6900098 Twin insulator charge storage device operation and its fabrication method
05/31/2005US6900089 Non-volatile memory device
05/26/2005WO2005048349A1 Memory transistor and memory element with an asymmetrical pocket doping region
05/26/2005WO2005048269A2 Flash memory programming using gate induced junction leakage current
05/26/2005WO2005048268A2 Nrom flash memory with self-aligned structural charge separation
05/26/2005WO2005048266A1 Nonvolatile semiconductor memory device
05/26/2005US20050114589 Wear leveling techniques for flash EEPROM systems
05/26/2005US20050114063 Semiconductor device and testing circuit which can carries out a verifying test effectively for non-volatile memory cells
05/26/2005US20050112896 Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory
05/26/2005US20050112815 Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same
05/26/2005US20050111290 Programmable sub-surface aggregating metallization structure and method of making same
05/26/2005US20050111288 Semiconductor memory device and storage method thereof
05/26/2005US20050111279 Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory
05/26/2005US20050111277 Non-volatile memory control techniques
05/26/2005US20050111269 Semiconductor memory with nonvolatile memory cell array and semiconductor device with nonvolatile memory cell array and logic device
05/26/2005US20050111266 Memory device having data paths with multiple speeds
05/26/2005US20050111264 Flash memory device
05/26/2005US20050111262 Non-volatile memory and method of operation
05/26/2005US20050111261 Non-volatile semiconductor memory device having sense amplifier with increased speed
05/26/2005US20050111260 Boosted substrate/tub programming for flash memories
05/26/2005US20050111259 Non-volatile semiconductor memory device and electric device with the same
05/26/2005US20050111258 Non-voltatile memory cell techniques
05/26/2005US20050111257 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
05/26/2005US20050111251 Memory cell structure
05/26/2005US20050110648 System and method for detecting motion of a body
05/26/2005US20050110073 Low voltage EEPROM memory arrays
05/25/2005EP1533703A2 Method for controlling non-volatile semiconductor memory system
05/25/2005EP1532689A1 Non-volatile semiconductor memory element and corresponding production and operation method
05/25/2005EP1532635A1 Method of programming a multi-level memory device
05/25/2005EP1532634A1 Row decoder circuit for use in programming a memory device
05/25/2005EP1344223A4 Organic bistable device and organic memory cells
05/25/2005EP0675502B1 Multiple sector erase flash EEPROM system
05/25/2005CN1620703A Novel method and structure for efficient data verification operation for non-volatile memories
05/25/2005CN1620702A Method and system for programming and inhibiting multi-level, non-volatile memory cells
05/25/2005CN1620699A A programmable conductor random access memory and a method for writing thereto
05/25/2005CN1619706A Memory cell signal window testing apparatus
05/25/2005CN1619704A Programming method of a non-volatile memory device having a charge storage layer
05/25/2005CN1619703A Methods of code programming a mask ROM
05/25/2005CN1619702A Method of over-erase prevention in a non-volatile memory device and related structure
05/25/2005CN1619701A Method of measuring threshold voltage for a NAND flash memory device
05/25/2005CN1203552C Non-volatile memory control circuit and its control method
05/25/2005CN1203551C Nonvolatile semiconductor memory device
05/25/2005CN1203550C Memory, recording device, reading-out device, recording method and reading-out method
05/24/2005US6898680 Minimization of overhead of non-volatile memory operation
05/24/2005US6898538 Method and system for the adjustment of an internal timing signal or a corresponding reference in an integrated circuit, and corresponding integrated circuit
05/24/2005US6898490 Vehicle controller for controlling rewriting data in a nonvolatile memory
05/24/2005US6898131 Voltage and temperature compensated pulse generator
05/24/2005US6898129 Erase of a memory having a non-conductive storage medium
05/24/2005US6898128 Programming of a memory with discrete charge storage elements
05/24/2005US6898127 Method for fabricating embedded flash ROM structure having code cells and data cells and operations for the same
05/24/2005US6898126 Method of programming a flash memory through boosting a voltage level of a source line
05/24/2005US6898125 Semiconductor device and method for driving the same
05/24/2005US6898124 Efficient and accurate sensing circuit and technique for low voltage flash memory devices
05/24/2005US6898121 Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
05/24/2005US6898120 Nonvolatile semiconductor memory device
05/24/2005US6898119 Nonvolatile semiconductor memory and its test method
05/24/2005US6898117 Multi-bit-per-cell flash EEPROM memory with refresh
05/24/2005US6897710 Voltage supply distribution architecture for a plurality of memory modules
05/24/2005US6897708 Semiconductor booster circuit requiring no transistor elements having a breakdown voltage of substantially twice the power supply voltage
05/24/2005US6897533 Multi-bit silicon nitride charge-trapping non-volatile memory cell
05/24/2005US6897522 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
05/24/2005US6897517 Multibit non-volatile memory and method
05/24/2005US6897515 Semiconductor memory and semiconductor device
05/24/2005US6897511 Metal-poly integrated capacitor structure
05/19/2005WO2005045847A1 Phase change memory element with improved cyclability
05/19/2005WO2005027194A3 Method of making nonvolatile transistor pairs with shared control gate
05/19/2005WO2005013281A3 Nonvolatile memory and method of making same
05/19/2005US20050108467 System and method for operating dual bank read-while-write flash
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