Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/2005
10/12/2005CN1681046A 快闪存储器 Flash memory
10/12/2005CN1681045A Semiconductor integrated circuit device including OPT memory, and method of programming OPT memory
10/12/2005CN1681044A Semiconductor memory device capable of carrying out stable operation
10/12/2005CN1681043A Nonvolatile semiconductor memory device
10/12/2005CN1223003C Non-volatile semiconductor memory
10/12/2005CN1222951C Real-time processing method for flash storage
10/11/2005US6954400 Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
10/11/2005US6954395 String programmable nonvolatile memory with NOR architecture
10/11/2005US6954393 Reading array cell with matched reference cell
10/11/2005US6954385 Method and apparatus for sensing resistive memory state
10/11/2005US6954383 On-system programmable and off-system programmable chip
10/11/2005US6954382 Multiple use memory chip
10/11/2005US6954381 EEPROM with split gate source side injection with sidewall spacers
10/11/2005US6954380 Programming method of nonvolatile semiconductor memory device
10/11/2005US6954379 Power-on reset circuit for erasing of split gate flash memory reference cells
10/11/2005US6954378 Nonvolatile semiconductor memory device and data write method thereof
10/11/2005US6954376 Non-volatile semiconductor memory array structure and operations
10/11/2005US6954102 Fast dynamic mirror sense amplifier with separate comparison equalization and evaluation paths
10/11/2005US6954101 Potential detector and semiconductor integrated circuit
10/11/2005US6953974 EEPROM device and method for providing lower programming voltage
10/11/2005US6953967 Semiconductor device and method of manufacturing the same
10/11/2005US6953324 Adjustable crankpin throw structure having improved throw stabilization means
10/06/2005WO2005093839A2 Electric device comprising phase change material
10/06/2005WO2005093762A1 Memory defect detection and self-repair technique
10/06/2005WO2005093760A1 Semiconductor device and method for writing data in semiconductor device
10/06/2005WO2005073975A3 Efficient verification for coarse/fine programming of non-volatile memory
10/06/2005US20050223268 Method of writing non-volatile memory that avoids corrupting the vital initialization code
10/06/2005US20050223152 Semiconductor memory device and method of outputting data signals
10/06/2005US20050219932 Rewriteable electronic fuses
10/06/2005US20050219931 Rewriteable electronic fuses
10/06/2005US20050219923 EEPROM and method of testing same
10/06/2005US20050219921 Semiconductor system
10/06/2005US20050219920 Semiconductor memory and method for manufacturing the same
10/06/2005US20050219919 Reconstruction of signal timing in integrated circuits
10/06/2005US20050219914 Method and apparatus for compensating for bitline leakage current
10/06/2005US20050219913 Non-volatile memory array
10/06/2005US20050219911 Non-volatile memory circuit and semiconductor device
10/06/2005US20050219910 Highly compact non-volatile memory and method thereof
10/06/2005US20050219909 Non-volatile semiconductor memory device, method for sub-block erase and electric device with the same
10/06/2005US20050219908 Programming flash memories
10/06/2005US20050219907 Synchronous flash memory with concurrent write and read operation
10/06/2005US20050219906 Operation scheme for programming charge trapping non-volatile memory
10/06/2005US20050219905 Memory device for improved reference current configuration
10/06/2005US20050219904 Non volatile memory
10/06/2005US20050219903 Method and apparatus for a dual power supply to embedded non-volatile memory
10/06/2005US20050219902 Voltage booster
10/06/2005US20050219901 Non-volatile memory structure
10/06/2005US20050219900 Semiconductor integrated circuit
10/06/2005US20050219899 Control system; control apparatus; storage device and computer program product
10/06/2005US20050219898 Dedicated redundancy circuits for different operations in a flash memory device
10/06/2005US20050219897 Method and apparatus for providing packed shift operations in a processor
10/06/2005US20050219896 Variable programming of non-volatile memory
10/06/2005US20050219885 Thin film magnetic memory device storing program information efficiently and stably
10/06/2005US20050218962 Voltage switching circuit
10/06/2005US20050218922 Method and apparatus for testing defective portion of semiconductor device
10/06/2005US20050218460 Semiconductor integrated circuit device with a stacked gate including a floating gate and a control gate
10/06/2005US20050218444 Non-volatile memory device
10/06/2005US20050218405 Non-volatile memory and semiconductor device
10/06/2005US20050218322 Data storage device including nanotube electron sources
10/06/2005US20050218236 Document having an encoded data structure
10/06/2005DE102005005584A1 1R1D-MRAM-Blockarchitektur 1R1D MRAM block architecture
10/05/2005EP1583239A2 Combination field programmable gate array allowing dynamic reprogrammability
10/05/2005EP1583102A1 A sequential program-verify method with result buffering
10/05/2005EP1583101A1 Integrated code and data flash memory
10/05/2005CN1679118A Built-in-self-test of flash memory cells
10/05/2005CN1679117A Method of programming a multi-level memory device
10/05/2005CN1679116A PCRAM rewrite prevention
10/05/2005CN1679110A Differential floating gate nonvolatile memories
10/05/2005CN1677680A Nonvolatile semiconductor memory and driving method the same
10/05/2005CN1677678A Flash memory unit and mfg. method
10/05/2005CN1677675A Nonvolatile semiconductor memory device
10/05/2005CN1677674A Multi-exponent storage unit
10/05/2005CN1677669A Integrated circuit device and mfg. and method for storing document and programme
10/05/2005CN1677648A Structure of non-volatile memory and its making method
10/05/2005CN1677638A Method and apparatus for testing defective portion of semiconductor device
10/05/2005CN1677574A Non-volatile memory circuit and semiconductor device
10/05/2005CN1677573A Semiconductor memory and method for manufacturing the same
10/05/2005CN1677572A Nonvolatile semiconductor memory device
10/05/2005CN1677571A Nonvolatile memory apparatus
10/05/2005CN1677570A Nonvolatile semiconductor memory device for writing multivalued data
10/05/2005CN1677569A NAND flash memory device and method of reading the same
10/05/2005CN1677568A Flash-storage two-position memory cell structure
10/05/2005CN1677565A Method and device for conducting cache memory reading and writing
10/05/2005CN1677561A Semiconductor memory device and method of outputting data signals
10/05/2005CN1221981C Flash memory array with internal refresh
10/05/2005CN1221980C Character line driver having separated bias wire in non- volatile memory
10/04/2005US6952623 Permanent chip ID using FeRAM
10/04/2005US6952369 Method for operating a NAND-array memory module composed of P-type memory cells
10/04/2005US6952368 Semiconductor device with non-volatile memory and random access memory
10/04/2005US6952365 Reducing the effects of noise in non-volatile memories through multiple reads
10/04/2005US6952033 Semiconductor memory array of floating gate memory cells with buried bit-line and raised source line
10/04/2005US6952032 Programmable array logic or memory devices with asymmetrical tunnel barriers
10/04/2005US6952031 Nonvolatile semiconductor memory and method of operating the same
10/04/2005US6951790 Method of forming select lines for NAND memory devices
10/04/2005US6951782 Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
09/2005
09/29/2005WO2005091303A1 Reprogramming a non-volatile solid state memory system
09/29/2005WO2005091302A1 Reprogramming a non-volatile solid state memory system
09/29/2005WO2004081617A3 Chalcogenide glass constant current device, and its method of fabrication and operation
09/29/2005US20050216723 Non-volatile semiconductor memory device
09/29/2005US20050215002 Method of forming select lines for nand memory devices
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