Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
01/2006
01/10/2006US6985386 Programming method for nonvolatile memory cell
01/10/2006US6985378 Programmable microelectronic device, structure, and system and method of forming the same
01/10/2006US6985376 Nonvolatile semiconductor storage apparatus having reduced variance in resistance values of each of the storage states
01/10/2006US6984863 Semiconductor decive and semiconductor memory using the same
01/10/2006US6984567 Nonvolatile semiconductor memory device and manufacturing method thereof
01/05/2006WO2006001979A1 Concurrent programming of non-volatile memory
01/05/2006WO2006001850A1 Erase algorithm multi-level bit flash memory
01/05/2006WO2006001058A1 Semiconductor device and source voltage control method
01/05/2006US20060004960 Faster method of erasing flash memory
01/05/2006US20060003516 Flash memory devices on silicon carbide
01/05/2006US20060002214 Semiconductor storage device having page copying function
01/05/2006US20060002213 Semiconductor storage device having page copying function
01/05/2006US20060002197 Method and apparatus to detect invalid data in a nonvolatile memory following a loss of power
01/05/2006US20060002195 System and method for a high-speed access architecture for semiconductor memory
01/05/2006US20060002194 Faster method of erasing flash memory
01/05/2006US20060002193 System and method for determining the value of a memory element
01/05/2006US20060002192 Integrated circuit memory device and method
01/05/2006US20060002189 System and method for determining service availability and soliciting customers
01/05/2006US20060002188 Write once read only memory employing floating gates
01/05/2006US20060002187 Programmable fuse and antifuse and method therefor
01/05/2006US20060002166 Semiconductor memory device, electronic card and electronic device
01/05/2006US20060001080 Write once read only memory employing floating gates
01/05/2006US20060001049 Service programmable logic arrays with low tunnel barrier interpoly insulators
01/05/2006US20060001045 Integrated circuit structures for increasing resistance to single event upset
01/05/2006DE102005016101A1 Elektroniksteuereinheit Electronic control unit
01/05/2006DE102004028934B3 Entladeschaltung für eine kapazitive Last Discharge circuit for a capacitive load
01/05/2006DE102004010840B4 Verfahren zum Betreiben einer elektrischen beschreib- und löschbaren nicht flüchtigen Speicherzelle und eine Speichereinrichtung zum elektrischen nicht flüchtigen Speichern A method of operating an electrical writable and erasable non-volatile memory cell and a memory device for storing nonvolatile electric
01/04/2006EP1612806A2 Semiconductor memory device
01/04/2006EP1611515A2 Program-controlled unit
01/04/2006EP1444822A4 Image sensing apparatus including a microcontroller
01/04/2006CN1717748A Method of driving a non-volatile memory
01/04/2006CN1717662A Memory module, memory system, and information device
01/04/2006CN1717661A Data recording apparatus
01/04/2006CN1716781A Application-specific integrated circuit equivalents of programmable logic and associated methods
01/04/2006CN1716616A Nonvolatile memory unit and its array
01/04/2006CN1716611A Nonvolatile memory device
01/04/2006CN1716455A Apparatus for generating internal voltage in test mode and its method
01/04/2006CN1716454A Flash memory device including bit line voltage clamp circuit for controlling bit line voltage during programming, and bit line voltage control method thereof
01/04/2006CN1716453A Multi-port memory device for buffering between hosts and non-volatile memory devices
01/04/2006CN1716452A Method for programing single layer compound crystal silicon read-only storage unit
01/04/2006CN1716451A Separable mobile storage device
01/04/2006CN1716450A Method for managing access to flash storage data
01/04/2006CN1716200A Integrated in-circuit programming device and method
01/04/2006CN1235229C Voltage hoisting circuit with no affect of bulk effect
01/04/2006CN1235228C Bit line controlling decoder circuit, semiconductor storage device and data reading method thereof
01/04/2006CN1235152C Semiconductor device and driving method of semiconductor device
01/04/2006CN1235054C Circuit for detecting low power of supplied voltage
01/03/2006US6983428 Highly compact non-volatile memory and method thereof
01/03/2006US6982919 Memory card and data processing system
01/03/2006US6982913 Data read circuit for use in a semiconductor memory and a memory thereof
01/03/2006US6982907 Retention improvement technique for one time programmable non-volatile memory
01/03/2006US6982906 Electrically programmable and electrically erasable semiconductor memory device
01/03/2006US6982905 Method and apparatus for reading NAND flash memory array
01/03/2006US6982904 Non-volatile semiconductor memory device and electric device with the same
01/03/2006US6982903 Field effect devices having a source controlled via a nanotube switching element
12/2005
12/29/2005WO2005124788A2 Nanoscale programmable structures and methods of forming and using same
12/29/2005WO2005124787A2 Electrical device having a programmable resistor connected in series to a punch-through diode and method of manufacturing therefor
12/29/2005WO2005081769A3 Nor-type channel-program channel-erase contactless flash memory on soi
12/29/2005US20050289389 Storage device employing a flash memory
12/29/2005US20050289313 Synchronous flash memory with status burst output
12/29/2005US20050289290 In-circuit programming architecture with processor and delegable flash controller
12/29/2005US20050286855 Data recording apparatus
12/29/2005US20050286337 Handling defective memory blocks of NAND memory devices
12/29/2005US20050286336 Flash EEprom system
12/29/2005US20050286328 Semiconductor device and source voltage control method
12/29/2005US20050286324 Semiconductor memory device
12/29/2005US20050286316 Memory device with multistage sense amplifier
12/29/2005US20050286315 Methods for erasing flash memory
12/29/2005US20050286314 Methods for erasing flash memory
12/29/2005US20050286313 Methods for erasing flash memory
12/29/2005US20050286312 Method of identifying logical information in a programming and erasing cell by on-side reading scheme
12/29/2005US20050286310 Charge pump circuitry having adjustable current outputs
12/29/2005US20050286309 Bit refresh circuit for refreshing register bit values, integrated circuit device having the same, and method of refreshing register bit values
12/29/2005US20050286308 Non-volatile semiconductor memory device
12/29/2005US20050286305 Sensing circuit for flash memory device operating at low power supply voltage
12/29/2005US20050286304 Flash memory with coarse/fine gate step programming
12/29/2005US20050286303 Floating-gate MOS transistor with double control gate
12/29/2005US20050286302 Flash memory device including bit line voltage clamp circuit for controlling bit line voltage during programming, and bit line voltage control method thereof
12/29/2005US20050286301 Semiconductor memory device
12/29/2005US20050286299 Flash memory and program verify method for flash memory
12/29/2005US20050286298 Operating a storage component
12/29/2005US20050286297 Multiple level cell memory device with single bit per cell, re-mappable memory block
12/29/2005US20050286287 Complementary nonvolatile memory device, methods of operating and manufacturing the same, logic device and semiconductor device including the same, and reading circuit for the same
12/29/2005US20050286284 Method and system for expanding flash storage device capacity
12/29/2005US20050286283 Method and system for expanding flash storage device capacity
12/29/2005US20050286211 Solid electrolyte switching element
12/29/2005US20050285183 Scalable two-transistor memory devices having metal source/drain regions and methods of fabricating the same
12/29/2005US20050285181 Non-volatil semiconductor memory device and writing method thereof
12/29/2005US20050285177 Vertical memory cell and manufacturing method thereof
12/29/2005US20050285096 Programmable structure, an array including the structure, and methods of forming the same
12/29/2005DE69732637T2 Selbsttest und Korrektur von Ladungsverlustfehlern in einem Sektorenlöschbaren und-programmierbaren Flashspeicher Self-test and correction of errors in a loss of charge and Sektorenlöschbaren-programmable Flash memory
12/29/2005DE19939092B4 Speicherbereich eines EEPROM sowie bereichsspezifische Programmier- und Löschverfahren Memory area of ​​the EEPROM and domain-specific programming and erasing method
12/29/2005DE102005026636A1 Non-volatile memory e.g. flash memory, device, has multiplexer circuit with program controller generating step control signals such that increment of voltage is varied according to mode of operation
12/29/2005DE102004046549A1 High voltage generating circuit for use in semiconductor memory device, has ripple reduction circuit limiting voltage level of high voltage applied from pumping output terminal of pump when pump is in one operating mode
12/29/2005DE102004024610B3 Festkörperelektrolytschaltelement Solid electrolyte switching element
12/28/2005EP1610344A1 Product and method preventing incorrect storage of data in case of power-down
12/28/2005EP1610343A1 An improved page buffer for a programmable memory device
12/28/2005EP1610338A1 Steering gate and bit line segmentation in non-volatile memories
12/28/2005EP1610335A2 Non-volatile memory and its sensing method
12/28/2005EP1609154A1 Phase change memory device