Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2005
12/15/2005US20050276107 Nand flash memory and blank page search method therefor
12/15/2005US20050276106 NAND flash memory with nitride charge storage gates and fabrication process
12/15/2005US20050276105 Nand-type non-volatile memory cell and method for operating same
12/15/2005US20050276103 Non-volatile semiconductor memory device
12/15/2005US20050276101 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
12/15/2005US20050276091 Semiconductor memory device
12/15/2005US20050275433 Low-current and high-speed phase-change memory devices and methods of driving the same
12/15/2005US20050275009 Nonvolatile memory device
12/15/2005US20050275008 [non-volatile memory and fabrication thereof]
12/15/2005US20050275004 Semiconductor integrated circuit, booster circuitry, and non-volatile semiconductor memory device
12/15/2005US20050275002 Vertical split gate memory cell and manufacturing method thereof
12/15/2005US20050274942 Nanoscale programmable structures and methods of forming and using same
12/15/2005DE102005022611A1 Programmierverfahren für ein nichtflüchtiges Speicherbauelement A programming method for a non-volatile memory device
12/15/2005DE102005022575A1 Non-volatile semiconductor memory e.g. flash memory, has floating gate whose two side surfaces are wave-shaped along lengthwise of channel region formed between source and floating junction regions
12/15/2005DE102004060350A1 Redundancy circuit for NAND flash memory device, applies external data to main page buffer unit or redundancy page buffer unit according to redundancy control signal from contact addressable memory cell
12/14/2005EP1605469A2 Reduced power programming of non-volatile cells
12/14/2005CN1708812A Improved system for programming a non-volatile memory cell
12/14/2005CN1707803A Nonvolatile semiconductor memory device for increasing coupling ratio, and fabrication method thereof
12/14/2005CN1707799A Semiconductor integrated circuit, booster circuitry, and capacitor
12/14/2005CN1707798A Nonvolatile semiconductor memory device and manufacturing method thereof
12/14/2005CN1707796A Nonvolatile semiconductor memory device and a method of the same
12/14/2005CN1707688A Sensing amplifier with low-power consumption
12/14/2005CN1707446A Nonvolatile memory apparatus
12/14/2005CN1231921C Nonvolatile semiconductor memory device
12/14/2005CN1231920C Quick low voltage-current mode identification circuit for multi-stage flash memory
12/13/2005US6975559 Device and method for reading non-volatile memories having at least one pseudo-parallel communication interface
12/13/2005US6975549 Low power dissipating sense amplifier
12/13/2005US6975547 Flash memory devices that support efficient memory locking operations and methods of operating flash memory devices
12/13/2005US6975545 Non-volatile memory cell
12/13/2005US6975544 Voltage discharge technique for controlling threshold-voltage characteristics of floating-gate transistor in circuitry such as flash EPROM
12/13/2005US6975543 Nonvolatile semiconductor memory device which stores two bits per memory cell
12/13/2005US6975542 NAND flash memory with improved read and verification threshold uniformity
12/13/2005US6975541 Alternating application of pulses on two sides of a cell
12/13/2005US6975540 Semiconductor memory device for differential data amplification and method therefor
12/13/2005US6975539 Digital multilevel non-volatile memory system
12/13/2005US6975538 Memory block erasing in a flash memory device
12/13/2005US6975537 Source side self boosting technique for non-volatile memory
12/13/2005US6975536 Mass storage array and methods for operation thereof
12/13/2005US6975535 Electronic memory, such as flash EPROM, with bitwise-adjusted writing current or/and voltage
12/13/2005US6975528 Read only memory device
12/13/2005US6974979 Nonvolatile semiconductor memory
12/13/2005US6974708 Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM
12/08/2005WO2005117118A1 Semiconductor device
12/08/2005WO2005117026A1 Resistive memory cell arrangement
12/08/2005WO2005041107A3 A method circuit and system for determining a reference voltage
12/08/2005US20050273549 Memory device with user configurable density/performance
12/08/2005US20050273548 Memory system with user configurable density/performance option
12/08/2005US20050273547 Method for balancing data access to non-volatile memory
12/08/2005US20050270892 Synchronous memory device with reduced power consumption
12/08/2005US20050270888 Stored data rewriting system for on-board control unit
12/08/2005US20050270882 High voltage generators having an integrated discharge path for use in non-volatile semiconductor memory devices
12/08/2005US20050270879 No-precharge FAMOS cell and latch circuit in a memory device
12/08/2005US20050270878 Nonvolatile semiconductor memory and method of operating the same
12/08/2005US20050270872 Low power dissipating sense amplifier
12/08/2005US20050270860 Erase verify for non-volatile memory
12/08/2005US20050270851 Data processing device
12/08/2005US20050270850 Nonvolatile flash memory and method of operating the same
12/08/2005US20050270849 Program/erase method for p-channel charge trapping memory device
12/08/2005US20050270848 Non-volatile memory device capable of changing increment of program voltage according to mode of operation
12/08/2005US20050270846 Nonvolatile semiconductor memory
12/08/2005US20050270845 Nonvolatile semiconductor memory device and manufacturing method thereof
12/08/2005US20050270843 Methods of sanitizing a flash-based data storage device
12/08/2005US20050270842 Nonvolatile memory
12/08/2005US20050270840 Component for security module
12/08/2005US20050270839 Erase verify for non-volatile memory
12/08/2005US20050270838 Erase verify for non-volatile memory
12/08/2005US20050270837 Erase verify for non-volatile memory
12/08/2005US20050270836 Erase verify for non-volatile memory
12/08/2005US20050270835 Erase verify for non-volatile memory
12/08/2005US20050270834 Erase verify for non-volatile memory
12/08/2005US20050270833 Reading circuit for reading a memory cell
12/08/2005US20050270832 High-density phase change cell array and phase change memory device having the same
12/08/2005US20050270817 Semiconductor memory device having first and second memory cell arrays and a program method thereof
12/08/2005US20050269626 Vertical NAND flash memory device
12/08/2005US20050269623 Nonvolatile semiconductor memory device and a method of the same
12/08/2005US20050269622 Semiconductor memory array of floating gate memory cells with program/erase and select gates, and methods of making and operating same
12/08/2005US20050269621 Flash memory devices on silicon carbide
12/08/2005US20050269566 Programmable structure, an array including the structure, and methods of forming the same
12/08/2005DE102005017828A1 Verfahren zum Lesen von Speicherfeldern A method of reading memory arrays
12/08/2005DE102004060421A1 NAND Flashspeicherbauelement und Verfahren zur Bildung eines Reservoirs eines NAND Flashspeicherbauelements NAND flash memory device and method for forming a reservoir of a NAND flash memory device
12/08/2005DE102004059411A1 Flash-Speichervorrichtung und Verfahren zur Steuerung derselben A flash memory device and method for controlling the same
12/08/2005DE102004059410A1 Semiconductor memory device e.g. NAND flash memory device, input/output repair method, involves positioning main and redundancy page buffers in main and redundancy array, respectively
12/07/2005EP1603138A1 Non-volatile memory with memory cell reading falsifying means
12/07/2005EP1603137A2 Program/erase method for p-channel charge trapping memory device
12/07/2005EP1603088A1 Component for a security module
12/07/2005EP1602109A1 Circuit for fast and accurate memory read operations
12/07/2005EP1415302B1 Soft program and soft program verify of the core cells in flash memory array
12/07/2005EP1196924A4 Method of programming phase-change memory element
12/07/2005CN1706000A Improved pre-charge method for reading a non-volatile memory cell
12/07/2005CN1705101A Program/erase method for p-channel charge trapping memory device
12/07/2005CN1705041A Method for implementing user program booting based on NAND flash memory
12/07/2005CN1705040A Method for implementing data access of flash memory
12/07/2005CN1705039A Method for programmed single bit element storage of SONOS type memory
12/07/2005CN1231061C Broadcast and reception system, and conditional access system therefor
12/07/2005CN1230904C Non--volatile semiconductor memory
12/07/2005CN1230829C Data processing method in quick electric erasing and writing programmable read-only memory system
12/07/2005CN1230826C Firmware copy protection system, method, and device
12/07/2005CN1230825C EEPROM memory chip with multiple use pinouts
12/06/2005US6973531 Tracking the most frequently erased blocks in non-volatile memory systems
12/06/2005US6973530 Method for writing and erasing a non-volatile memory area
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