Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2006
03/07/2006US7009881 Semiconductor memory device
03/07/2006US7009880 Non-volatile memory architecture to improve read performance
03/07/2006US7009878 Data reprogramming/retrieval circuit for temporarily storing programmed/retrieved data for caching and multilevel logical functions in an EEPROM
03/07/2006US7009868 Memory device having a transistor and one resistant element as a storing means and method for driving the memory device
03/07/2006US7009862 Semiconductor device
03/07/2006US7009694 Indirect switching and sensing of phase change memory cells
03/07/2006US7009244 Scalable flash EEPROM memory cell with notched floating gate and graded source region
03/07/2006US7009241 Metal-poly integrated capacitor structure
03/07/2006US7008846 Non-volatile floating gate memory cell with floating gates formed as spacers, and an array thereof, and a method of manufacturing
03/02/2006WO2006022908A1 Flash memory unit and method of programming a flash memory device
03/02/2006WO2006021838A1 Method and system for accessing performance parameters in memory devices
03/02/2006WO2005096315A3 Thermally stable reference voltage generator for mram
03/02/2006US20060044933 Burst read addressing in a non-volatile memory device
03/02/2006US20060044881 Unified multilevel cell memory
03/02/2006US20060044877 Non-volatile memory device, and control method therefor
03/02/2006US20060044876 Programming and manufacturing method for split gate memory cell
03/02/2006US20060044874 Semiconductor memory device
03/02/2006US20060044873 Semiconductor device and a method of manufacturing the same
03/02/2006US20060044872 NAND flash depletion cell structure
03/02/2006US20060044871 Semiconductor integrated circuit
03/02/2006US20060044869 Data write circuit and data write method for semiconductor storage device
03/02/2006US20060043461 Process for manufacturing a byte selection transistor for a matrix of non volatile memory cells and corresponding structure
03/02/2006DE102004058132B3 Data storage circuit for computer has system for evaluation of data stores in CBRAM-resistor storage cell and has bit lines and word lines crossing at right-angles with evaluation circuit on each bit line
03/02/2006DE102004040296B3 Schreiben von Daten in einen nichtflüchtigen Speicher eines tragbaren Datenträgers Writing data into a nonvolatile memory of a portable data carrier
03/02/2006DE102004019860B4 Verfahren und Vorrichtung zur Programmierung von CBRAM-Speicherzellen Method and apparatus for programming the memory cells of the CBRAM
03/01/2006EP1630820A1 Memory cell programming method with detection of transconductance degradation
03/01/2006EP1630817A2 Resistive memory device, in particular CBRAM memory
03/01/2006EP1630816A2 Universal memory element and method of programming same
03/01/2006EP1630814A1 Method for reading electrically programmable and erasable memory cells with anticipated bit line precharge
03/01/2006EP1504334A4 Methods of computing with digital multistate phase change materials
03/01/2006CN1741195A Data update method for non-volatile memory
03/01/2006CN1741194A Nonvolatile semiconductor memory device and read method
03/01/2006CN1741193A Nonvolatile memory apparatus
03/01/2006CN1741192A Data write circuit and data write method for semiconductor storage device
03/01/2006CN1740959A A non-volatile memory device controlled by a micro-controller
03/01/2006CN1244235C Method of and apparatus for transmitting data for interactive TV applications
03/01/2006CN1244157C Nonvolatile semiconductor memory device
03/01/2006CN1244156C Nonvolatile semiconductor storage and its producing method and operating method
03/01/2006CN1244110C Semiconductor memory for secure data storage
02/2006
02/28/2006US7007140 Storage device, storage device controlling method, and program
02/28/2006US7007133 Synchronous memory open page register
02/28/2006US7007131 Method and apparatus including special programming mode circuitry which disables internal program verification operations by a memory
02/28/2006US7006388 Memory with reference-initiated sequential sensing
02/28/2006US7006386 Storage device employing a flash memory
02/28/2006US7006385 Semiconductor storage device
02/28/2006US7006384 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
02/28/2006US7006383 Nonvolatile semiconductor memory for management of a number of data writer/erase times
02/28/2006US7006382 Programming flash memories
02/28/2006US7006381 Semiconductor device having a byte-erasable EEPROM memory
02/28/2006US7006380 Non-volatile semiconductor memory device reading and writing multi-value data from and into pair-cell
02/28/2006US7006379 Semiconductor memory
02/28/2006US7006378 Array architecture and operation methods for a nonvolatile memory
02/28/2006US7006377 Apparatus and method for booting NAND flash memory of a mobile terminal
02/28/2006US7006376 Tunable cantilever apparatus and method for making same
02/28/2006US7006371 Semiconductor memory device and method for programming and erasing a memory cell
02/28/2006US7006025 Method for generating a reference current for sense amplifiers and corresponding generator
02/28/2006US7005697 Method of forming a non-volatile electron storage memory and the resulting device
02/28/2006US7005666 Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby
02/28/2006US7005350 Method for fabricating programmable memory array structures incorporating series-connected transistor strings
02/28/2006US7005344 Method of forming a device with a gallium nitride or gallium aluminum nitride gate
02/23/2006WO2006019653A2 A novel nvram memory cell architecture that integrates conventional sram and flash cells
02/23/2006WO2006018947A1 Test device and test method
02/23/2006US20060039225 Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used
02/23/2006US20060039208 Metal-poly integrated capacitor structure
02/23/2006US20060039207 Self-adaptive program delay circuitry for programmable memories
02/23/2006US20060039199 Method for reading uniform channel program (UCP) flash memory cells
02/23/2006US20060039198 Bitline governed approach for coarse/fine programming
02/23/2006US20060039197 Page buffer for a programmable memory device
02/23/2006US20060039196 Corrected data storage and handling methods
02/23/2006US20060039195 Semiconductor memory device
02/23/2006DE102005029493A1 Integrierte Speicherschaltungsanordnung und Verfahren Integrated circuit memory device and method
02/23/2006DE102004043517A1 Halbleiterspeichergerät mit Speicherzellen mit Floating-Gate-Elektrode und Herstellungsverfahren A semiconductor memory device having memory cells with floating gate electrode and production method
02/22/2006EP1456853B1 Flash device operating from a power-supply-in-package (psip) or from a power supply on chip
02/22/2006CN1739165A Programmable interconnect cell for configuring a field programmable gate array
02/22/2006CN1739163A 浮动栅模拟电压反馈电路 Analog floating gate voltage feedback circuit
02/21/2006US7003621 Methods of sanitizing a flash-based data storage device
02/21/2006US7003620 Appliance, including a flash memory, that is robust under power failure
02/21/2006US7002869 Voltage regulator circuit
02/21/2006US7002865 Nonvolatile semiconductor memory device
02/21/2006US7002861 Memory device for controlling programming setup time
02/21/2006US7002853 Memory card having a buffer memory for storing testing instruction
02/21/2006US7002852 Data output circuits for synchronous integrated circuit memory devices
02/21/2006US7002851 Storage device employing a flash memory
02/21/2006US7002850 System and method for over erase reduction of nitride read only memory
02/21/2006US7002849 Method for programming and erasing non-volatile memory with nitride tunneling layer
02/21/2006US7002848 Nonvolatile semiconductor memory device
02/21/2006US7002847 Electrically alterable non-volatile multi-level memory device and method of operating such a device
02/21/2006US7002846 Non-volatile semiconductor memory device with memory transistor
02/21/2006US7002845 Semiconductor memory device capable of realizing a chip with high operation reliability and high yield
02/21/2006US7002844 Method of repairing a failed wordline
02/21/2006US7002843 Variable current sinking for coarse/fine programming of non-volatile memory
02/21/2006US7002833 Complementary bit resistance memory sensor and method of operation
02/21/2006US7002828 Flash cell fuse circuit
02/21/2006US7002203 Semiconductor memory with nonvolatile memory cell array and semiconductor device with nonvolatile memory cell array and logic device
02/16/2006WO2005078729A3 High voltage driver circuit with fast reading operation
02/16/2006US20060034141 Nonvolatile semiconductor memory
02/16/2006US20060034129 Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
02/16/2006US20060034128 Non-volatile memory device and erase method of the same
02/16/2006US20060034127 Flash memory device having multi-level cell and reading and programming method thereof
02/16/2006US20060034126 Preconditioning of defective and redundant columns in a memory device