Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
04/2006
04/04/2006US7023728 Semiconductor memory system including selection transistors
04/04/2006US7023721 Semiconductor integrated circuit device
04/04/2006US7023262 Negative voltage generator for a semiconductor memory device
04/04/2006US7023056 Memory cell structure
04/04/2006US7023048 Nonvolatile semiconductor memory devices and the fabrication process of them
04/04/2006US7023045 Layout of a flash memory having symmetric select transistors
04/04/2006US7023040 DRAM technology compatible processor/memory chips
04/04/2006US7023014 Non-volatile memory and fabrication method thereof
03/2006
03/30/2006WO2006033832A2 New compensated method to implement a high voltage discharge phase after erase pulse in a flash memory device
03/30/2006WO2006033719A2 Low voltage non-volatile memory cells using twin bit line current sensing
03/30/2006US20060069925 Content processing device, content accumulation medium, content processing method and content processing program
03/30/2006US20060069896 System and method for storing data
03/30/2006US20060068529 Self-aligned split-gate NAND flash memory and fabrication process
03/30/2006US20060067138 Semiconductor memory device having memory cells to store cell data and reference data
03/30/2006US20060067132 Nonvolatile semiconductor memory device which erases data in units of one block including a number of memory cells, and data erasing method of the nonvolatile semiconductor memory device
03/30/2006US20060067131 Non-volatile memory device and program method thereof
03/30/2006US20060067130 Nonvolatile memory devices including overlapped data sensing and verification and methods of verifying data in nonvolatile memory devices
03/30/2006US20060067129 Method for reading electrically programmable and erasable memory cells, with bit line precharge-ahead
03/30/2006US20060067128 Flash memory
03/30/2006US20060067127 Method of programming a monolithic three-dimensional memory
03/30/2006US20060067126 Floating-body memory cell write
03/30/2006US20060067125 Programming and erasing method for charge-trapping memory devices
03/30/2006US20060067124 Nonvolatile memory structure
03/30/2006US20060067123 Serial flash semiconductor memory
03/30/2006US20060067122 Charge-trapping memory cell
03/30/2006US20060067121 Variable current sinking for coarse/fine programming of non-volatile memory
03/30/2006US20060067120 Method and circuit arrangement for reading from a flash/EEPROM memory cell
03/30/2006US20060067119 Integrated memory circuit arrangement
03/30/2006US20060067118 Nonvolatile memory structure
03/30/2006US20060065920 Semiconductor memory device and method for producing the same
03/30/2006DE102005045664A1 Integrierte Schaltung, Halbleiterspeicherbauelement und Betriebsverfahren An integrated circuit, semiconductor memory device and method of operation
03/30/2006DE102004045903A1 Circuit to connect high and low voltage signals especially to control a semiconductor memory has low voltage logic unit holding memory and voltage increase circuit
03/29/2006EP1640995A1 A reading circuit and method for a nonvolatile memory device
03/29/2006EP1640994A1 A memory device with unipolar and bipolar selectors
03/29/2006EP1640872A1 Data transfer method and system
03/29/2006EP1588320A4 Method for counting beyond endurance limitations of non-volatile memories
03/29/2006CN1754230A Non-volatile semiconductor memory with large erase blocks storing cycle counts
03/29/2006CN1754229A Semiconductor storage device
03/29/2006CN1754228A Differential dual floating gate circuit and method for programming
03/29/2006CN1754180A Method for counting beyond endurance limitations of non-volatile memories
03/29/2006CN1753104A Booster circuit for erasable programmable read only storage device and boosting method
03/29/2006CN1248095C Entertainment device, information processor, and portable recorder
03/28/2006US7020739 Memory controller, flash memory system having memory controller and method for controlling flash memory device
03/28/2006US7020037 Nonvolatile semiconductor memory device
03/28/2006US7020028 Nonvolatile semiconductor memory device
03/28/2006US7020027 Programming method for nonvolatile memory cell
03/28/2006US7020026 Bitline governed approach for program control of non-volatile memory
03/28/2006US7020025 Nonvolatile semiconductor memory
03/28/2006US7020024 Methods and devices for increasing voltages on non-selected wordlines during erasure of a flash memory
03/28/2006US7020023 Semiconductor integrated circuit
03/28/2006US7020022 Method of reference cell design for optimized memory circuit yield
03/28/2006US7020021 Ramped soft programming for control of erase voltage distributions in flash memory devices
03/28/2006US7020020 Low voltage non-volatile memory cells using twin bit line current sensing
03/28/2006US7020019 System and method for destructive purge of memory device
03/28/2006US7020018 Nonvolatile memory device and method for fabricating the same
03/28/2006US7020017 Variable programming of non-volatile memory
03/28/2006US7020014 Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices
03/28/2006US7020007 Non-volatile static random access memory
03/28/2006US7020006 Discharge of conductive array lines in fast memory
03/28/2006US7020001 Multi-level semiconductor memory architecture and method of forming the same
03/28/2006US7019998 Unified multilevel cell memory
03/28/2006US7019355 Nonvolatile semiconductor memory and a fabrication method thereof
03/28/2006US7018898 Non-volatile two transistor semiconductor memory cell and method for producing the same
03/28/2006US7018895 Nonvolatile memory cell with multiple floating gates formed after the select gate
03/23/2006WO2006031503A1 One time programmable phase change memory
03/23/2006WO2006029594A1 Semiconductor memory element
03/23/2006WO2005077025A3 Secured phase-change devices
03/23/2006WO2005073977A3 Variable current sinking for coarse/fine programming of non-volatile memory
03/23/2006WO2005072472A3 Method of manufacturing non-volatile dram
03/23/2006US20060064539 Memory controller, flash memory system employing memory controller and method for controlling flash memory device
03/23/2006US20060062063 Compensated method to implement a high voltage discharge phase after erase pulse in a flash memory device
03/23/2006US20060062052 Memory card and data processing system
03/23/2006US20060062050 Low voltage non-volatile memory cells using twin bit line current sensing
03/23/2006US20060062049 Methods for programming user data and confirmation information in nonvolatile memory devices
03/23/2006US20060062047 Memory module decoder
03/23/2006US20060062046 Data control unit capable of correcting boot errors, and corresponding self-correction method
03/23/2006US20060062045 Semiconductor memory having electrically erasable and programmable semiconductor memory cells
03/23/2006US20060060912 Semiconductor memory device and manufacturing method thereof
03/23/2006DE19860506B4 System und Verfahren zum Programmieren eines nichtflüchtigen Speichers System and method of programming a non-volatile memory
03/23/2006DE19724221B4 Nichtflüchtiger Speicher Non-volatile memory
03/23/2006DE102005041374A1 Halbleiterbauelement mit Generatorschaltung für hohe Spannung A semiconductor device comprising generator circuit for high voltage
03/23/2006DE102005036819A1 Leseverstärkerschaltung Sense amplifier circuit
03/23/2006DE102005036555A1 Programmieren programmierbarer resistiver Speichervorrichtungen Programming of programmable resistive memory devices
03/23/2006DE102005036135A1 Betriebsverfahren und nichtflüchtiges Speicherbauelement Method of operation and non-volatile memory device
03/23/2006DE102005035518A1 Flash memory device has power level detector arranged between power supply pads provided at upper and lower regions of power supply unit
03/23/2006DE102004041907B3 Resistive Speicheranordnung, insbesondere CBRAM-Speicher Resistive memory device, in particular CBRAM
03/23/2006DE102004037152A1 Memory cell, forming base of invention comprises selection element with threshold-value characteristic in addition to memory element with phase change material as memory medium
03/22/2006EP1638110A1 Method and apparatus for operating a string of charge trapping memory cells
03/22/2006EP1636849A2 Mirror image non-volatile memory cell transistor pairs with single poly layer
03/22/2006EP1636803A2 Source controlled operation of non-volatile memories
03/22/2006EP1636802A2 Tracking cells for a memory system
03/22/2006EP1636801A1 Multibit memory with dynamic reference voltage generation
03/22/2006EP1535285B1 Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
03/22/2006CN2766291Y Non-contact induction card with storage function
03/22/2006CN1751437A Analog floating gate voltage sense during dual conduction programming
03/22/2006CN1751395A Method and apparatus for dual conduction analog programming
03/22/2006CN1751361A Electronic circuit with array of programmable logic cells
03/22/2006CN1751296A Recording medium recording control method and recording control device
03/22/2006CN1750172A Nonvolatile memory devices with test data buffers and methods for testing same
03/22/2006CN1750170A Integrated memory device and process