Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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03/03/1994 | WO1994006529A1 Liquid gasification apparatus |
03/03/1994 | DE4327814A1 Address decoder for repair of memory device - has voltage line connected to multiple repair connections which may be selectively removed by laser beam |
03/03/1994 | DE4307564A1 Memory access control with generator of address, control etc. signals - has programming device of memory signal time mode, responding to given time control signals |
03/02/1994 | EP0585153A1 Integrated memory circuit with output preliminory precharge |
03/02/1994 | EP0585150A1 Memory read circuit, with precharging and equilibrating before reading |
03/02/1994 | EP0584832A2 Integrated memory circuit device |
03/02/1994 | EP0584688A2 Memory device |
03/02/1994 | EP0584390A1 Circuit for the amplification and holding of data with different supply voltages |
03/01/1994 | US5291456 Data storage control device |
03/01/1994 | US5291455 Memory having distributed reference and bias voltages |
03/01/1994 | US5291454 Semiconductor memory device |
03/01/1994 | US5291453 Serial memory apparatus having units for presetting reading bit lines to a given voltage |
03/01/1994 | US5291452 Sensing amplifier circuit for data readout from a semiconductor memory device |
03/01/1994 | US5291451 Automatic inspecting apparatus for precharge of data line in memory device |
03/01/1994 | US5291450 Read circuit of dynamic random access memory |
03/01/1994 | US5291447 Semiconductor memory device having function of controlling sense amplifiers |
03/01/1994 | US5291444 Combination DRAM and SRAM memory array |
03/01/1994 | US5291443 Simultaneous read and refresh of different rows in a dram |
03/01/1994 | US5291437 Shared dummy cell |
03/01/1994 | US5291436 Ferroelectric memory with multiple-value storage states |
03/01/1994 | US5291435 Read-only memory cell |
03/01/1994 | US5291432 Semiconductor memory device |
02/24/1994 | DE4326133A1 Rapid sense amplifier for integrated memory circuit - has two MOS transistors acting as diodes in series between power rails, and inverter responsive to voltage at input node to provide output logic state determined by input current |
02/23/1994 | EP0541683B1 Reduction processor |
02/22/1994 | US5289475 Semiconductor memory with inverted write-back capability and method of testing a memory using inverted write-back |
02/22/1994 | US5289432 Dual-port static random access memory cell |
02/22/1994 | US5289431 Semiconductor memory device divided into blocks and operable to read and write data through different data lines and operation method of the same |
02/22/1994 | US5289429 Address decoder which variably selects multiple rows and/or columns and semiconductor memory device using same |
02/22/1994 | US5289428 Semiconductor memory device |
02/22/1994 | US5289426 Dual port memory having address conversion function |
02/22/1994 | US5289424 Pseudo-static random access memory |
02/22/1994 | US5289421 Dynamic random access memory with low noise characteristics |
02/22/1994 | US5289419 Static random access memory device with high speed differential amplifier coupled with digit line pair through capacitors |
02/22/1994 | US5289416 Semiconductor integrated device and wiring correction arrangement therefor |
02/22/1994 | US5289415 Sense amplifier and latching circuit for an SRAM |
02/22/1994 | US5289410 Non-volatile magnetic random access memory |
02/22/1994 | US5289409 Bipolar transistor memory cell and method |
02/22/1994 | US5289406 Read only memory for storing multi-data |
02/22/1994 | US5289405 Semiconductor memory circuit device having memory cells constructed on a Bicmos gate array |
02/22/1994 | US5289404 Semiconductor memory device |
02/22/1994 | US5289401 Analog storage device for artificial neural network system |
02/22/1994 | US5289061 Output gate for a semiconductor IC |
02/22/1994 | CA2021585C Integrated mos circuit with adjustable voltage level |
02/17/1994 | WO1994003899A1 Nonvolatile random access memory |
02/17/1994 | WO1994003898A1 Dram cell assembly |
02/17/1994 | DE4325362A1 Semiconductor memory with data preset function - has memory cell matrix and several word and bit lines, with storage capacitor in each cell, with switching controlled by external signal |
02/17/1994 | CA2141566A1 Cubic metal oxide thin film epitaxially grown on silicon |
02/16/1994 | EP0583108A2 Entity-relation database |
02/16/1994 | EP0582974A2 Current sensing circuit of a semiconductor memory device |
02/16/1994 | EP0582767A1 Latch-up immune CMOS output driver |
02/15/1994 | US5287533 Apparatus for changing individual weight value of corresponding synaptic connection for succeeding learning process when past weight values satisfying predetermined condition |
02/15/1994 | US5287527 Logical signal output drivers for integrated circuit interconnection |
02/15/1994 | US5287485 Digital processing system including plural memory devices and data transfer circuitry |
02/15/1994 | US5287327 Synchronous dynamic random access memory |
02/15/1994 | US5287325 Semiconductor memory device having a driver unit for boosting a word line twice |
02/15/1994 | US5287324 Multiport DRAM |
02/15/1994 | US5287323 Semiconductor memory device |
02/15/1994 | US5287322 Integrated circuit dual-port memory device having reduced capacitance |
02/15/1994 | US5287320 Timing coinciding circuit simultaneously supplying two power supply voltages applied in different timing |
02/15/1994 | US5287319 Nonvolatile semiconductor memory device |
02/15/1994 | US5287312 Dynamic random access memory |
02/15/1994 | US5287311 Method and apparatus for implementing ×2 parity DRAM for 16 bit systems from ×4 parity DRAM |
02/15/1994 | US5287308 Undershoot resisting input circuit for semi-conductor device |
02/15/1994 | US5287306 Semiconductor memory device |
02/15/1994 | US5287305 Memory device including two-valued/n-valued conversion unit |
02/15/1994 | US5287304 Memory cell circuit and array |
02/15/1994 | US5287303 SCR type memory apparatus |
02/15/1994 | US5287301 Static RAM cell |
02/15/1994 | US5287012 Semiconductor integrated circuit equipped with diagnostic circuit for checking reference voltage signal supplied to internal step-down circuit |
02/15/1994 | US5287011 Power-on detecting circuit desirable for integrated circuit equipped with internal step-down circuit |
02/10/1994 | DE4314321A1 Pulse signal generator for semiconductor memory - produces internal voltage dependent on operating temperature, for driving inverters of ring oscillator |
02/09/1994 | EP0582414A2 Multiple array memory device with staggered read/write for high speed data access |
02/09/1994 | EP0582294A2 Memory device |
02/08/1994 | US5285418 Semiconductor device having a temperature detection circuit |
02/08/1994 | US5285416 Semiconductor memory device with restricted potential amplitude of data lines and operation method thereof |
02/08/1994 | US5285414 Semiconductor memory having transistors which drive data lines in accordance with values of write data and column select signal |
02/08/1994 | US5285413 Semiconductor memory device having selective and simultaneous write function |
02/08/1994 | US5285412 Semiconductor memory device with step-down transistor for external signal |
02/08/1994 | US5285408 Method and apparatus for providing a faster ones voltage level restore operation in a dram |
02/08/1994 | US5285292 Dynamic random access memory device with flash write mode carrying out for selected memory cell arrays |
02/08/1994 | US5285117 Output circuit with output enabling inputs |
02/08/1994 | US5285080 Method of selective light detection |
02/08/1994 | CA2024433C Main memory control system |
02/03/1994 | DE4325677A1 NAND-type volatile DRAM matrix - comprises MOSFET-capacitor cells and static storage register groups for temporarily storing data for re-writing-in or reading-out data from cells for each column of matrix |
02/03/1994 | DE4323010A1 Voltage generator circuit for dynamic random access memory - has inverters connected via capacitors to NMOS and PMOS field effect transistors |
02/02/1994 | EP0581465A2 Address transition detection |
02/02/1994 | EP0581443A2 Memory cell with known state on power-up |
02/02/1994 | EP0581309A2 Burn-in test enable circuit of a semiconductor memory device and burn-in test method |
02/02/1994 | EP0580748A1 Low power voltage sensing circuit |
02/01/1994 | US5283885 For use with data processing apparatus |
02/01/1994 | US5283838 Neural network apparatus |
02/01/1994 | US5283765 Address input buffer circuit for a semi-conductor storage device |
02/01/1994 | US5283764 Refresh timer for providing a constant refresh timer regardless of variations in the operating voltage |
02/01/1994 | US5283763 Memory control system and method |
02/01/1994 | US5283761 Method of multi-level storage in DRAM |
02/01/1994 | US5283760 Data transmission circuit |
02/01/1994 | US5283757 High speed BiCMOS memory having large noise margin and repeatable read port |
02/01/1994 | US5283478 Fast capacitive-load driving circuit particularly memories |
02/01/1994 | CA1326624C Liquid-phase-epitaxy deposition method in the manufacture of devices |
01/27/1994 | DE4322359A1 Semiconductor DRAM with several inputs and outputs - has WE buffer converting write enable signal at TTL level into one with CMOS level, and buffer protection circuit |