Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/1979
11/20/1979US4175010 Method of reinforcing a conductive base pattern by electroplating and device obtained by means of the method
11/20/1979US4174982 Capless annealing compound semiconductors
11/20/1979US4174562 Process for forming metallic ground grid for integrated circuits
11/20/1979CA1066816A1 Impact sound stressing for semiconductor devices
11/20/1979CA1066815A1 Integrated circuit isolation structure and method for producing the isolation structure
11/20/1979CA1066814A1 Semiconductor varactor device and electronic tuner using the same
11/15/1979WO1979000968A1 High mobility multilayered heterojunction devices employing modulated doping
11/15/1979WO1979000900A1 Low-density pattern in a photoresist
11/14/1979EP0005351A1 A method of making a narrow gate MESFET
11/14/1979EP0005265A2 Method for making contact on the adhesive side of the electrode of an electrical device
11/14/1979EP0005185A1 Method for simultaneously forming Schottky-barrier diodes and ohmic contacts on doped semiconductor regions
11/14/1979EP0005181A1 Method of making a semiconductor device comprising components of the field effect type
11/14/1979EP0005166A1 Method of manufacturing semiconductor devices with insulated areas of polycrystalline silicon and semiconductor devices thus produced
11/14/1979EP0005165A1 Method of manufacturing insulated conductors of polycrystalline silicon as well as correspondingly constructed semiconductor devices with field effect elements
11/14/1979EP0005164A1 Process for manufacturing integrated implanted logic circuits with a hardened photoresist mask
11/14/1979EP0005163A1 Method for forming a Pt-Si Schottky barrier contact
11/13/1979USRE30147 Method of coating a glass ribbon on a liquid float bath
11/13/1979US4174521 Palladium silicide layer on single crystal silicon substrate, second layer of amorphous silicon and third layer of contact material
11/13/1979US4174422 Layer of nickel crystals intermediate between monocrystalline sodium chloride and silver
11/13/1979US4174252 Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
11/13/1979US4174251 Method of selective gas etching on a silicon nitride layer
11/13/1979US4174219 Method of making a negative exposure mask
11/13/1979US4174217 Method for making semiconductor structure
11/13/1979US4173821 Method of producing semiconductor devices
11/13/1979US4173819 Method of manufacturing a dynamic random access memory using MOS FETS
11/13/1979US4173818 Multistage masking, etching, and doping
11/13/1979CA1066432A1 Method for improving the crystallinity of semiconductor films by laser beam scanning
11/13/1979CA1066431A1 Semiconductor device manufacture
11/13/1979CA1066209A1 Microdevice substrate and method for making micropattern devices
11/13/1979CA1066208A1 Microsubstrates and method for making micropattern devices
11/13/1979CA1066174A1 Method for producing compound thin films
11/13/1979CA1066144A1 Process for the production of fine structures consisting of a vapor-deposited material on a base
11/06/1979US4173791 Insulated gate field-effect transistor read-only memory array
11/06/1979US4173766 Insulated gate field-effect transistor read-only memory cell
11/06/1979US4173764 Field effect transistor on a support having a wide forbidden band
11/06/1979US4173763 Heterojunction tunneling base transistor
11/06/1979US4173734 Voltage dividing integrated circuit device
11/06/1979US4173683 Organosilicon compound
11/06/1979US4173674 Flat, polished outer surface
11/06/1979US4173661 Method for depositing thin layers of materials by decomposing a gas to yield a plasma
11/06/1979US4173064 Split gate electrode, self-aligned antiblooming structure and method of making same
11/06/1979US4173063 Fabrication of a semiconductor component element having a Schottky contact and little series resistance utilizing special masking in combination with ion implantation
11/01/1979WO1979000876A1 Automatic photomask inspection system and apparatus
10/1979
10/31/1979EP0005125A1 Method for manufacturing contacts on semiconductor devices and devices made by this method
10/31/1979EP0005059A2 A semiconductor device having a layered structure and a method of making it
10/31/1979EP0004872A2 Solution for the etching of silicon wafers having a well-defined etching rate and method resulting therefrom
10/31/1979EP0004871A1 Monolithic integrated semiconductor device with at least one I2L structure, memory cell using such device and memory matrix using such memory cell
10/30/1979US4172907 Coating with heat curable resin
10/30/1979US4172906 Thermal conersion of surface layer having specially provided composition
10/30/1979US4172756 Vapor deposition of monocrystalline gallium for semiconductors
10/30/1979US4172741 Method for laser trimming of bi-FET circuits
10/30/1979US4172698 Pressure gas operated pump
10/30/1979US4172656 Method of positioning a thin semiconductor plate and patterns to be projected thereon in a photorepeater and a photorepeater for carrying out this method
10/30/1979US4172544 Wire tensioning and feeding device
10/30/1979CA1065499A1 Semiconductor component with electric contacts and process for making the same
10/30/1979CA1065498A1 Open tube gallium diffusion process for semiconductor devices
10/30/1979CA1065497A1 Method of forming recessed oxide isolation
10/30/1979CA1065460A1 Buried-heterostructure diode injection laser
10/30/1979CA1065233A1 Heat treatment of cadmium mercury telluride
10/23/1979US4172279 Integrated current supply circuits
10/23/1979US4172261 Semiconductor device having a highly air-tight package
10/23/1979US4172260 Insulated gate field effect transistor with source field shield extending over multiple region channel
10/23/1979US4172158 Protective cotaings for semiconductors
10/23/1979US4172005 Method of etching a semiconductor substrate
10/23/1979US4172004 Method for forming dense dry etched multi-level metallurgy with non-overlapped vias
10/23/1979US4171997 Method of producing polycrystalline silicon components, particularly solar elements
10/23/1979US4171996 Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
10/23/1979US4171995 Epitaxial deposition process for producing an electrostatic induction type thyristor
10/23/1979US4171990 Migration of uniform fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
10/23/1979US4171871 Achromatic unit magnification optical system
10/23/1979US4171740 Wafer packaging system
10/23/1979CA1064862A1 Gas discharge apparatus
10/18/1979WO1979000776A1 Amorphous semiconductors equivalent to crystalline semiconductors
10/17/1979EP0004787A2 Heated semiconductor bonding tool
10/17/1979EP0004563A1 Transversal filter
10/17/1979EP0004556A1 Method and device for manufacturing an intermediate mounting element for semiconductor chips
10/17/1979EP0004555A2 Electron sensitive resin containing a metallic methacrylate salt and its application in electron-beam lithography
10/16/1979US4171492 Temperature compensated zener diode arrangement
10/16/1979US4171489 Boron nitride
10/16/1979US4171477 Micro-surface welding
10/16/1979US4171424 Polyesters containing units derived from metal salts of N-hydroxyalkylated branched α-aminoacids
10/16/1979US4171242 Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
10/16/1979US4171234 Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
10/16/1979US4171229 Improved process to form bucket brigade device
10/16/1979US4171162 System for positioning an object in an optical projection system
10/16/1979US4171049 Magazine and a method of storing electronic components
10/16/1979US4170818 Barrier height voltage reference
10/16/1979CA1064624A1 High density semiconductor circuit layout
10/16/1979CA1064601A1 Manufacture of semiconductor ribbon
10/09/1979US4170677 Anisotropic resistance bonding technique
10/09/1979US4170666 Method for reducing surface recombination velocities in III-V compound semiconductors
10/09/1979US4170502 Method of manufacturing a gate turn-off thyristor
10/09/1979US4170501 Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition
10/09/1979US4170500 Process for forming field dielectric regions in semiconductor structures without encroaching on device regions
10/09/1979US4170496 Semiconductors
10/09/1979US4170492 Method of selective oxidation in manufacture of semiconductor devices
10/09/1979US4170491 Semiconductors
10/09/1979US4170490 Process for thermal gradient zone melting utilizing a beveled wafer edge
10/09/1979US4170418 Alignment apparatus
10/09/1979CA1064164A1 Method for controlling lateral doping profiles in semiconductor device