Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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12/25/1979 | US4180825 Heteroepitaxial deposition of GaP on silicon substrates |
12/25/1979 | US4180772 Large-scale integrated circuit with integral bi-directional test circuit |
12/25/1979 | US4180749 Input buffer for integrated injection logic circuits |
12/25/1979 | US4180618 Thin silicon film electronic device |
12/25/1979 | US4180604 Two layer resist system |
12/25/1979 | US4180596 Method for providing a metal silicide layer on a substrate |
12/25/1979 | US4180432 Process for etching SiO2 layers to silicon in a moderate vacuum gas plasma |
12/25/1979 | US4180423 Method of manufacturing red light-emitting gallium phosphide device |
12/25/1979 | US4180422 Method of making semiconductor diodes |
12/25/1979 | US4180416 Thermal migration-porous silicon technique for forming deep dielectric isolation |
12/25/1979 | US4180161 Carrier structure integral with an electronic package and method of construction |
12/25/1979 | US4179802 Studded chip attachment process |
12/25/1979 | US4179794 Process of manufacturing semiconductor devices |
12/25/1979 | US4179793 Method of making a charge transfer device |
12/25/1979 | US4179792 Low temperature CMOS/SOS process using dry pressure oxidation |
12/25/1979 | CA1068830A Ion implanted bubble propagation structure |
12/25/1979 | CA1068829A Integrated test and assembly device |
12/25/1979 | CA1068583A Method of producing homogeneously doped semiconductor material of p-conductivity |
12/18/1979 | US4179622 Method and system for in situ control of material removal processes |
12/18/1979 | US4179534 Gold-tin-gold ohmic contact to N-type group III-V semiconductors |
12/18/1979 | US4179533 Multi-refractory films for gallium arsenide devices |
12/18/1979 | US4179528 Vacuum deposition of monocrystallone silicon |
12/18/1979 | US4179324 Superimposing on substrate, electrostatically bonding, removal from substrate |
12/18/1979 | US4179317 Liquid phase epitaxial growth, group iii-v crystals, two element single crystal substrate |
12/18/1979 | US4179312 Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition |
12/18/1979 | US4179311 Method of stabilizing semiconductor device by converting doped poly-Si to polyoxides |
12/18/1979 | US4179310 Laser trim protection process |
12/18/1979 | US4178877 Apparatus for plasma treatment of semiconductor materials |
12/18/1979 | US4178674 Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor |
12/12/1979 | EP0006025A1 Process for manufacturing a thin-film CdS/CdTe photovoltaic cell having enhanced conversion efficiency and photovoltaic cell produced by this process |
12/12/1979 | EP0006003A1 Improvements in or relating to field effect devices and their fabrication |
12/12/1979 | EP0006002A1 Method of fabricating a field effect transistor |
12/12/1979 | EP0006001A1 Improvements in or relating to field effect devices and their fabrication |
12/12/1979 | EP0005775A1 Article comprising a substrate and an overlying processing layer of actinic radiation-sensitive material and process for fabrication of the article |
12/12/1979 | EP0005762A1 Method to apply a tension with an electron beam |
12/12/1979 | EP0005750A1 Photopolymerisable mixture and light-sensitive coating material |
12/12/1979 | EP0005744A1 Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration |
12/12/1979 | EP0005741A1 A process for providing ion-implanted regions in a semiconductive substrate |
12/12/1979 | EP0005739A1 Method of making cross-over interconnections for integrated RC networks |
12/12/1979 | EP0005728A1 Method for making a lateral PNP or NPN transistor with a high gain and transistor so produced |
12/12/1979 | EP0005727A1 Sensing probe for determining location of conductive spots |
12/12/1979 | EP0005723A1 Large scale integrated circuit and method of fabricating the same |
12/12/1979 | EP0005721A1 Method for fabricating a bipolar transistor having a polysilicon base contact and a polysilicon or metal emitter contact |
12/12/1979 | EP0005720A1 Method of making a field effect transistor with insulated gate and very narrow effective channel |
12/11/1979 | US4178605 Complementary MOS inverter structure |
12/11/1979 | US4178603 Schottky transistor with low residual voltage |
12/11/1979 | US4178584 Integrated injection logic digital-to-analog converter employing feedback regulation and method |
12/11/1979 | US4178415 Codeposition of alkali metal with mixed silicon oxides |
12/11/1979 | US4178396 Multistep heat treatment in oxidizing atmosphere; semiconductors |
12/11/1979 | US4178197 Formation of epitaxial tunnels utilizing oriented growth techniques |
12/11/1979 | US4178196 Antimony trisulfide porous film |
12/11/1979 | US4178195 Semiconductor structure |
12/11/1979 | US4178192 Promotion of surface film stability during initiation of thermal migration |
12/11/1979 | US4178191 Process of making a planar MOS silicon-on-insulating substrate device |
12/11/1979 | US4178190 Method of making a bipolar transistor with high-low emitter impurity concentration |
12/11/1979 | US4178113 Buffer storage apparatus for semiconductor wafer processing |
12/11/1979 | US4177554 Assembling leads to a substrate |
12/11/1979 | CA1068012A1 Metal semiconductor contracts for high frequency devices |
12/11/1979 | CA1068011A1 Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation |
12/11/1979 | CA1068010A1 Semiconductor devices using genetically grown films of silicon nitride |
12/11/1979 | CA1068009A1 Impact sound stressing for semiconductors |
12/11/1979 | CA1068001A1 Single igfet memory cell with buried storage element |
12/11/1979 | CA1067800A1 Control of oxygen in silicon crystals |
12/04/1979 | US4177477 Semiconductor switching device |
12/04/1979 | US4177372 Method and apparatus for laser zone melting |
12/04/1979 | US4177321 Reduction of difference in lattice constant |
12/04/1979 | US4177298 Reducing current noise, good signal-to-noise ratio |
12/04/1979 | US4177096 Method for manufacturing a semiconductor integrated circuit device |
12/04/1979 | US4177095 Semiconductors |
12/04/1979 | US4177094 Semiconductors |
12/04/1979 | US4177093 Semiconductors, indium-tin oxide or tin oxide coating, highly efficient cell |
12/04/1979 | US4177084 Method for producing a low defect layer of silicon-on-sapphire wafer |
12/04/1979 | US4176751 Container apparatus for handling semiconductor wafers |
12/04/1979 | US4176443 Method of connecting semiconductor structure to external circuits |
12/04/1979 | US4176442 Method for producing a semiconductor fixed value ROM |
12/04/1979 | CA1067332A1 Dissolving baked novolak resin based photoresist with aqueous solution of permanganate and phosphoric acid |
11/28/1979 | EP0005551A2 Article comprising a substrate and an overlying layer of electron beam radiation-sensitive material and process for fabrication thereof |
11/28/1979 | EP0005491A1 Process for the preparation of low temperature silicon nitride films by photochemical vapor deposition |
11/28/1979 | EP0005461A1 Metal semiconductor field effect transistor(MESFET)and method for its manufacture |
11/28/1979 | EP0005442A1 Process and apparatus for producing aluminium nitride useful for electronic applications |
11/27/1979 | US4176372 Semiconductor device having oxygen doped polycrystalline passivation layer |
11/27/1979 | US4176370 Photovoltaic converter |
11/27/1979 | US4176369 Image sensor having improved moving target discernment capabilities |
11/27/1979 | US4176281 Method for adjusting a semiconductor disk relative to a radiation mask in x-ray photolithography |
11/27/1979 | US4176206 Oxidation in water containing oxidizer gas |
11/27/1979 | US4176029 Subminiature bore and conductor formation |
11/27/1979 | US4176016 Forming electrically insulating layers by sputter deposition |
11/27/1979 | US4176004 In thyristors, etching to reduce firing current with ionizable gas |
11/27/1979 | US4176003 Method for enhancing the adhesion of photoresist to polysilicon |
11/27/1979 | US4175988 Melt-formed polycrystalline ceramics and dopant hosts containing phosphorus |
11/27/1979 | US4175983 Process for the production of a high frequency transistor |
11/27/1979 | US4175971 Light-sensitive photopolymerizable composition |
11/27/1979 | US4175530 Pneumatic governor control apparatus for engine fuel injection system |
11/27/1979 | US4175317 Method for manufacturing junction type field-effect transistors |
11/27/1979 | CA1067210A1 Method of making mos device |
11/27/1979 | CA1067208A1 Insulated gate field-effect transistor read-only memory array |
11/27/1979 | CA1067160A1 Threshold i2l circuit with hysteresis |
11/27/1979 | CA1067038A1 Planarizing insulative layers by resputtering |
11/20/1979 | US4175240 Integrated logic circuit with a current source made as a field-effect transistor |
11/20/1979 | US4175235 Apparatus for the plasma treatment of semiconductors |