Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
04/2000
04/18/2000US6052315 Semiconductor memory having electrically erasable and programmable nonvolatile semiconductor memory cells
04/18/2000US6052314 EEPROM device
04/18/2000US6052313 Semiconductor integrated circuit device
04/18/2000US6052311 Electrically erasable programmable read only flash memory
04/18/2000US6052310 Method for tightening erase threshold voltage distribution in flash electrically erasable programmable read-only memory (EEPROM)
04/18/2000US6052309 Nonvolatile configuration cells and cell arrays
04/18/2000US6052308 Balanced sensing arrangement for flash EEPROM
04/18/2000US6052307 Leakage tolerant sense amplifier
04/18/2000US6052306 Method and device for automatic determination of the required high voltage for programming/erasing an EEPROM
04/18/2000US6052305 Erasing circuit for a flash memory device having a triple well structure
04/18/2000US6052304 Non-volatile storage element and method for manufacturing using standard processing
04/13/2000WO2000021094A1 Wordline driver for flash electrically erasable programmable read only memory (eeprom)
04/13/2000WO2000021092A1 Semiconductor device
04/12/2000EP0992998A1 Nonvolatile memory device and inspection method thereof
04/12/2000EP0992997A1 Intelligent refreshing method and apparatus for increasing multi-level non-volatile memory charge retention reliability
04/11/2000US6049899 Soft errors handling in EEPROM devices
04/11/2000US6049503 Wordline driving circuit in semiconductor memory
04/11/2000US6049501 Memory data bus architecture and method of configuring multi-wide word memories
04/11/2000US6049498 Double transistor switch for supplying multiple voltages to flash memory wordlines
04/11/2000US6049494 Semiconductor memory device
04/11/2000US6049491 Bitline bias circuit for non-volatile memory devices
04/11/2000US6049486 Triple mode erase scheme for improving flash EEPROM cell threshold voltage (VT) cycling closure effect
04/11/2000US6049484 Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase
04/11/2000US6049483 Nonvolatile memory device having program and/or erase voltage clamp
04/11/2000US6049482 Non-volatile semiconductor memory device
04/11/2000US6049481 Multiple-valued mask programmable read only memory semiconductor device with improved word level generator
04/11/2000US6049480 Circuit for performing auto-verifying program on non-volatile memory device
04/11/2000US6049479 Operational approach for the suppression of bi-directional tunnel oxide stress of a flash cell
04/11/2000US6049477 Ferroelectric memory device in which the channel region has the same conductivity type as the diffusion region
04/11/2000US6049243 Voltage level converter circuit improved in operation reliability
04/06/2000WO2000019436A1 Decoder element for producing an output signal with three different potentials and operating method for said decoder element
04/06/2000WO2000019384A1 Circuit and method for authenticating the content of a memory location
04/05/2000EP0991081A1 Emulated EEPROM memory device and corresponding method
04/05/2000EP0991080A2 Non-volatile semiconductor memory device
04/05/2000EP0991075A1 Circuit device for providing a hierarchical row decoding in semiconductor memory devices
04/05/2000EP0990989A2 Microcomputer provided with flash memory and method of storing program into flash memory
04/05/2000EP0990987A2 Electric device with flash memory built-in
04/05/2000EP0990235A2 Electrically addressable passive device, method for electrical addressing of the same and uses of the device and the method
04/05/2000CN1249843A Precision programming of nonvolatile memory cells
04/05/2000CN1249828A Memory with redundancy circuit
04/05/2000CN1249519A Non-volatile memory device and its testing method
04/05/2000CN1249518A Non-volatile semiconductor memory device
04/05/2000CN1249463A Microcomputer provided with flash memory and its program store method
04/04/2000US6047352 Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
04/04/2000US6047302 Memory storing redundant binary codes and arithmetic unit and discrete cosine transformer using such memory
04/04/2000US6046941 Non-volatile semiconductor memory device
04/04/2000US6046940 Nonvolatile semiconductor memory device
04/04/2000US6046939 Nonvolatile semiconductor memory with fast data programming and erasing function using ECC
04/04/2000US6046938 Structure of a flash memory
04/04/2000US6046937 Electronic control unit and method for storing rewrite count of nonvolatile memory
04/04/2000US6046936 Semiconductor, memory card, and data processing system
04/04/2000US6046934 Method and device for multi-level programming of a memory cell
04/04/2000US6046933 Nonvolatile semiconductor memory device and IC memory card using same
04/04/2000US6046932 Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM
04/04/2000US6046928 Non-volatile semiconductor memory device
04/04/2000US6046626 Voltage transfer circuit and a booster circuit, and an IC card comprising the same
03/2000
03/30/2000WO2000017886A1 Bank selector circuit for a simultaneous operation flash memory device with a flexible bank partition architecture
03/30/2000WO2000017885A1 Memory address decoding circuit for a simultaneous operation flash memory device with a flexible bank partition architecture
03/30/2000WO2000017884A1 Simultaneous operation flash memory device with a flexible bank partition architecture
03/30/2000WO2000017882A1 Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture
03/30/2000DE19844666C1 Decoderelement zur Erzeugung eines Ausgangssignals mit drei unterschiedlichen Potentialen und Betriebsverfahren für das Decoderelement Decoder element for generating an output signal with three different potentials and operating procedures for the decoder element
03/29/2000EP0989495A1 Electronic circuit for protecting data contained in a semiconductor device
03/29/2000EP0988633A1 Control circuit for a non-volatile semi-conductor memory system
03/29/2000EP0925178A4 Memory device using movement of protons
03/29/2000EP0761004B1 Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash eeproms
03/29/2000EP0616335B1 Nonvolatile semiconductor memory device having a status register and test method for the same
03/29/2000EP0596198B1 Flash eprom with erase verification and address scrambling architecture
03/29/2000CN1050937C Electrically erasable memory elements characterized by reduced current and improved thermal stability
03/28/2000US6044443 Portable computer with memory management system and method for prolonging the lifetime of internal battery
03/28/2000US6044346 System and method for operating a digital voice recognition processor with flash memory storage
03/28/2000US6044033 NOR-type nonvolatile semiconductor memory device and a method for reading therefrom
03/28/2000US6044022 Programmable configuration for EEPROMS including 2-bit non-volatile memory cell arrays
03/28/2000US6044021 Programmable read-only memory with improved access time
03/28/2000US6044020 Nonvolatile semiconductor memory device with a row decoder circuit
03/28/2000US6044019 Non-volatile memory with improved sensing and method therefor
03/28/2000US6044018 Single-poly flash memory cell for embedded application and related methods
03/28/2000US6044017 Flash memory device
03/28/2000US6044015 Method of programming a flash EEPROM memory cell array optimized for low power consumption
03/28/2000US6044014 Electronic control unit and method for storing rewrite count of nonvolatile memory
03/28/2000US6044013 Nonvolatile semiconductor memory device
03/28/2000US6044006 Method for programming a ROM cell arrangement
03/28/2000US6043530 Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
03/23/2000WO2000016399A1 Semiconductor circuit
03/23/2000WO2000016338A1 Flash memory array with internal refresh
03/23/2000CA2341706A1 Flash memory array with internal refresh
03/22/2000EP0987716A2 Method of securing data in an EPROM
03/22/2000EP0987715A1 Method for maintaining the memory of non-volatile memory cells
03/22/2000EP0914658A4 Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
03/22/2000CN2370527Y Micro full electronic sound interview machine
03/22/2000CN2370526Y Device for on-line programming small memory unit
03/22/2000CN1050699C Flash EEPROM cell and manufacturing method thereof
03/21/2000US6041221 Circuit and method for verifying data of a wireless communications device
03/21/2000US6041014 Nonvolatile semiconductor memory device having row decoder
03/21/2000US6041012 Semiconductor integrated circuit device having a booster circuit and a storage device
03/21/2000US6041011 Booster circuit and semiconductor memory device having the same
03/21/2000US6041009 Apparatus for stabilizing an antifuse used for a memory device
03/21/2000US6041007 Device with programmable memory and method of programming
03/21/2000US6041001 Method of increasing data reliability of a flash memory device without compromising compatibility
03/21/2000US6040999 Semiconductor memory device
03/21/2000US6040997 Flash memory leveling architecture having no external latch
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