| Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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| 03/08/2001 | WO2001017030A1 Non-volatile memory structure for twin-bit storage and methods of making same |
| 03/08/2001 | WO2001017018A1 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
| 03/08/2001 | WO2001016961A1 Electric/electronic circuit device |
| 03/08/2001 | WO2001016960A1 1 transistor cell for eeprom application |
| 03/08/2001 | WO2001016959A1 Floating gate storage cell |
| 03/08/2001 | CA2382715A1 Electric/electronic circuit device |
| 03/07/2001 | EP1081835A2 MOS charge pump generation and regulation method and apparatus |
| 03/07/2001 | EP1081710A1 Semiconductor memory apparatus which can make read speed of memory cell faster |
| 03/07/2001 | EP1081595A2 Semiconductor apparatus |
| 03/07/2001 | EP0861491A4 Method and system for soft programming algorithm |
| 03/07/2001 | EP0686978B1 A method for in-factory testing of flash EEPROM devices |
| 03/07/2001 | CN1286794A Enhanced word line driver to reduce gate capacitance for low voltage applications |
| 03/07/2001 | CN1286793A Flash memory array |
| 03/06/2001 | US6198685 Word-line driving circuit and semiconductor memory device |
| 03/06/2001 | US6198672 Voltage phase generator with increased driving capacity |
| 03/06/2001 | US6198664 APDE scheme for flash memory application |
| 03/06/2001 | US6198663 Non-volatile semiconductor memory IC |
| 03/06/2001 | US6198662 Circuit and method for pre-erasing/erasing flash memory array |
| 03/06/2001 | US6198661 Sensing circuit for semiconductor device and sensing method using the same |
| 03/06/2001 | US6198659 Defective address data storage circuit for nonvolatile semiconductor memory device having redundant function and method of writing defective address data |
| 03/06/2001 | US6198657 Nonvolatile semiconductor memory device and method of manufacturing the same |
| 03/06/2001 | US6198648 Semiconductor memory device with hierarchical bit line architecture |
| 03/06/2001 | US6198342 Charge pump circuit simple in construction and free from trouble even at low voltage |
| 03/06/2001 | US6198331 Voltage level converter circuit improved in operation reliability |
| 03/06/2001 | US6198319 Power-on circuit built in IC |
| 03/06/2001 | CA2207004C Storage cell for analog recording and playback |
| 03/01/2001 | WO2001015172A2 Flash memory with externally triggered detection and repair of leaky cells |
| 03/01/2001 | WO2001015171A2 Flash memory architecture employing three layer metal interconnect |
| 03/01/2001 | DE19935497A1 Verfahren und Schaltungsanordnung zum Korrigieren von Speicherfehlern Method and circuit for correcting memory errors |
| 03/01/2001 | DE10037950A1 Non-volatile ferroelectric memory device arrangement, includes pairs of a control-line and a read-line formed in the direction intersecting the word-lines at fixed intervals |
| 03/01/2001 | DE10035690A1 Semiconductor memory device has input/output mode set by shifting levels of signals received at contacts of mode setting circuit |
| 02/28/2001 | EP1079396A1 Nonvolatile semiconductor memory device and overerase correction method |
| 02/28/2001 | EP1079395A1 Method for programming EEPROM memory devices with improved reliability, and corresponding EEPROM memory device |
| 02/28/2001 | EP1079394A1 Semiconductor memory |
| 02/28/2001 | EP1079372A1 Recording device, recording method, reproducing device and reproducing method |
| 02/28/2001 | EP1078370A1 Sense amplifier with zero power idle mode |
| 02/28/2001 | EP1058870A4 Internal cmos reference generator and voltage regulator |
| 02/27/2001 | US6195307 Booster circuit and semiconductor memory device having the same |
| 02/27/2001 | US6195297 Semiconductor memory device having pull-down function for non-selected bit lines |
| 02/27/2001 | US6195295 Segmented column memory device voltage steering technique |
| 02/27/2001 | US6195293 Method and circuit of erasing a flash memory |
| 02/27/2001 | US6195292 Semiconductor memory with floating gate type FET |
| 02/27/2001 | US6195291 Flash EEPROM with on-chip erase source voltage generator |
| 02/27/2001 | US6195290 Method of avoiding disturbance during the step of programming and erasing an electrically programmable, semiconductor non-volatile storage device |
| 02/27/2001 | US6195289 Device for reading analog nonvolatile memory cells, in particular flash cells |
| 02/27/2001 | US6195288 Nonvolatile semiconductor memory device |
| 02/27/2001 | US6195287 Data programming method for a nonvolatile semiconductor storage |
| 02/27/2001 | US6195286 Circuit and method for reading a non-volatile memory |
| 02/27/2001 | US6195285 EEPROM device having a constant data writing duration |
| 02/27/2001 | US6195284 Semiconductor memory device |
| 02/27/2001 | US6194829 Micro vacuum tube with cap seal |
| 02/27/2001 | US6194767 X-ROM semiconductor memory device |
| 02/27/2001 | US6194759 Semiconductor memory device |
| 02/22/2001 | WO2001013378A1 Multiple-bit nonvolatile memory using non-conductive charge trap gate |
| 02/22/2001 | WO2001013377A1 Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash eeprom |
| 02/22/2001 | WO2001013214A1 External storage using nonvolatile semiconductor memory |
| 02/22/2001 | DE10027097A1 Halbleiterspeichervorrichtung und eine solche Halbleiterspeichervorrichtung verwendender Sensor A semiconductor memory device, and such a semiconductor memory device using measuring sensor |
| 02/22/2001 | DE10026993A1 Semiconductor memory device e.g. EEPROM, has write-in driver circuit that substitutes the defect data in primary row with the data of secondary row selected by redundancy selector |
| 02/21/2001 | EP1077450A2 NAND type nonvolatile memory |
| 02/20/2001 | US6192445 System and method for programming EPROM cells using shorter duration pulse(s) in repeating the programming process of a particular cell |
| 02/20/2001 | US6191982 Address comparing for non-precharged redundancy address matching with redundancy disable mode |
| 02/20/2001 | US6191980 Single-poly non-volatile memory cell having low-capacitance erase gate |
| 02/20/2001 | US6191979 Semiconductor memory device with reduced precharging time for bit lines |
| 02/20/2001 | US6191978 Non-volatile semiconductor memory device |
| 02/20/2001 | US6191977 Sense circuit for a multi-level flash memory cell |
| 02/20/2001 | US6191976 Flash memory margin mode enhancements |
| 02/20/2001 | US6191975 Non-volatile NAND type semiconductor memory device with stacked gate memory cells and a stacked gate select transistor |
| 02/20/2001 | US6191974 Nonvolatile semiconductor memory |
| 02/20/2001 | US6191445 Nonvolatile semiconductor memory device and method of reading a data therefrom |
| 02/15/2001 | WO2001011687A1 Gate isolated triple-well non-volatile cell |
| 02/15/2001 | WO2001011631A1 Ramped gate technique for soft programming to tighten the vt distribution |
| 02/15/2001 | DE10034743A1 Programming method for flash memory element involves sequentially programming selected memory cells until threshold voltage is reached that is lower than target threshold voltage |
| 02/14/2001 | CN1284199A Programmable sub-surface aggregating metallization structure and method of making same |
| 02/13/2001 | US6189081 Non-volatile semiconductor storage with memory requirement and availability comparison means and method |
| 02/13/2001 | US6189070 Apparatus and method for suspending operation to read code in a nonvolatile writable semiconductor memory |
| 02/13/2001 | US6188621 Test circuit for flash memory device and method thereof |
| 02/13/2001 | US6188614 Structure of a channel write/erase flash memory cell and manufacturing method and operating method thereof |
| 02/13/2001 | US6188613 Device and method in a semiconductor memory for erasing/programming memory cells using erase/program speeds stored for each cell |
| 02/13/2001 | US6188612 Semiconductor memory |
| 02/13/2001 | US6188611 Non-volatile semiconductor memory device |
| 02/13/2001 | US6188610 Electrically erasable and programmable nonvolatile semiconductor memory device having data holding function and data holding method |
| 02/13/2001 | US6188609 Ramped or stepped gate channel erase for flash memory application |
| 02/13/2001 | US6188608 Nonvolatile semiconductor memory device |
| 02/13/2001 | US6188607 Integrated circuit memory having divided-well architecture |
| 02/13/2001 | US6188605 Non-volatile semiconductor memory using split bit lines |
| 02/13/2001 | US6188604 Flash memory cell & array with improved pre-program and erase characteristics |
| 02/13/2001 | US6188603 Nonvolatile memory device |
| 02/13/2001 | US6188602 Mechanism to commit data to a memory device with read-only access |
| 02/13/2001 | US6188599 Circuit for driving nonvolatile ferroelectric memory |
| 02/13/2001 | US6188293 Low power oscillation circuit and non-volatile semiconductor memory having ring oscillator |
| 02/13/2001 | US6188265 High-voltage NMOS switch |
| 02/13/2001 | US6188102 Non-volatile semiconductor memory device having multiple different sized floating gates |
| 02/13/2001 | US6187635 Channel hot electron programmed memory device having improved reliability and operability |
| 02/08/2001 | WO2001009902A1 Method and circuit for the correction of memory errors |
| 02/08/2001 | WO2001009901A1 Semiconductor integrated device and electronic apparatus mounted with the device |
| 02/07/2001 | EP1074995A1 Method for programming multi-level non-volatile memories by controlling the gate voltage |
| 02/07/2001 | EP0864203A4 High voltage level shifting cmos buffer |
| 02/06/2001 | US6185142 Apparatus for a semiconductor memory with independent reference voltage |
| 02/06/2001 | US6185134 Flash memory control method, flash memory system using the control method and flash memory device using the control method |
| 02/06/2001 | US6185133 Flash EPROM using junction hot hole injection for erase |