Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/2000
10/25/2000EP1047078A1 Method for differentiating the programming and erasing voltages in non volatile memory devices and corresponding memory device manufacturing process
10/25/2000EP1047077A1 Nonvolatile memory device with double hierarchical decoding
10/25/2000EP1046173A2 Method of erasing a non-volatile memory
10/25/2000EP1046121A1 Automatic test process with non-volatile result table store
10/25/2000CN1271406A Two stage reciprocating compressors and asosciated HVAC systems and methods
10/24/2000US6138059 Vehicle control system and unit for preventing power supply cutoff during re-programming mode
10/24/2000US6137744 Memory device with reduced power consumption
10/24/2000US6137741 Sense amplifier with cascode output
10/24/2000US6137738 Method for in-system programming of serially configured EEPROMS using a JTAG interface of a field programmable gate array
10/24/2000US6137733 Boosting circuit using 2-step boosting operation
10/24/2000US6137732 Semiconductor memory device having voltage boosting circuit
10/24/2000US6137731 Semiconductor memory including an intermediate potential circuit capable of providing reduced current flow
10/24/2000US6137729 Method for erasing memory cells in a flash memory device
10/24/2000US6137728 Nonvolatile reprogrammable interconnect cell with programmable buried source/drain in sense transistor
10/24/2000US6137727 Reduction of oxide stress through the use of forward biased body voltage
10/24/2000US6137726 Multi-level memory devices having memory cell referenced word line voltage generations
10/24/2000US6137725 Row decoding circuit for a semiconductor non-volatile electrically programmable memory and corresponding method
10/24/2000US6137724 Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages
10/24/2000US6137723 Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure
10/24/2000US6137722 Memory array having Frohmann-Bentchkowsky EPROM cells with a reduced number of access transistors
10/24/2000US6137721 Memory device having erasable frohmann-bentchkowsky EPROM cells that use a plate-to-floating gate coupled voltage during erasure
10/24/2000US6137720 Semiconductor reference voltage generator having a non-volatile memory structure
10/24/2000US6137719 Nonvolatile semiconductor memory device storing multi-bit data
10/24/2000US6137718 Method for operating a non-volatile memory cell arrangement
10/24/2000US6137717 Nonvolatile memory and writing circuit for same
10/24/2000US6137716 Memory system using multiple storage mechanisms to enable storage and retrieval of more than two states in a memory cell
10/24/2000US6137344 High speed charge pump circuit having field effect transistors possessing an improved charge transfer efficiency
10/24/2000US6137315 Drive circuit for a non-volatile semiconductor storage configuration
10/24/2000US6136652 Preventing dielectric thickening over a channel area of a split-gate transistor
10/19/2000WO2000062301A1 Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
10/19/2000WO2000062166A1 Programmable read-only memory and method for operating said read-only memory
10/19/2000DE19916065A1 Programmierbarer Festwertspeicher und Verfahren zum Betreiben des Festwertspeichers Programmable read-only memory and method for operating the read-only memory
10/19/2000CA2332867A1 Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
10/18/2000EP1044452A2 Programmable sub-surface aggregating metallization structure and method of making same
10/18/2000CN1270394A Non-volatile semiconductor memroy device and control method for data erasion
10/17/2000US6134628 Method and computer-based system for rewriting a nonvolatile rewritable memory
10/17/2000US6134157 Nonvolatile semiconductor memory device capable of preventing data from being written in error
10/17/2000US6134156 Method for initiating a retrieval procedure in virtual ground arrays
10/17/2000US6134151 Space management for managing high capacity nonvolatile memory
10/17/2000US6134150 Erase condition for flash memory
10/17/2000US6134149 Method and apparatus for reducing high current during chip erase in flash memories
10/17/2000US6134148 Semiconductor integrated circuit and data processing system
10/17/2000US6134147 Non-volatile semiconductor memory device
10/17/2000US6134146 Wordline driver for flash electrically erasable programmable read-only memory (EEPROM)
10/17/2000US6134145 High data rate write process for non-volatile flash memories
10/17/2000US6134144 Flash memory array
10/17/2000US6134143 Multi-state flash memory defect management
10/17/2000US6134142 Redundancy method and a device for a non-volatile semiconductor memory
10/17/2000US6134141 Dynamic write process for high bandwidth multi-bit-per-cell and analog/multi-level non-volatile memories
10/17/2000US6134140 Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells
10/17/2000US6133604 NOR array architecture and operation methods for ETOX cells capable of full EEPROM functions
10/17/2000US6133098 Process for making and programming and operating a dual-bit multi-level ballistic flash memory
10/17/2000US6132177 Two stage reciprocating compressors and associated HVAC systems and methods
10/17/2000CA2162197C Communication system for programmable devices
10/12/2000WO2000060605A1 Space management for managing high capacity nonvolatile memory
10/12/2000DE19914781A1 Electronic apparatus especially field apparatus
10/12/2000DE10015370A1 Halbleiterspeicherbauelement mit aktivierbaren und deaktivierbaren Wortleitungen Semiconductor memory device with and deactuable word lines
10/11/2000EP1043860A2 Security units, memory units, data processing units and data encryption methods
10/11/2000EP1043729A2 Memory and data processing units, and data processing methods
10/11/2000CN1269906A Integrated circuit with flag register for block selection of nonvolatile cells for bulk operations
10/10/2000US6130841 Semiconductor nonvolatile memory apparatus and computer system using the same
10/10/2000US6130840 Memory cell having an erasable Frohmann-Bentchkowsky memory transistor
10/10/2000US6130839 Methods of programming, erasing and reading a flash memory
10/10/2000US6130837 Storage device employing a flash memory
10/10/2000US6130836 Semiconductor IC device having a control register for designating memory blocks for erasure
10/10/2000US6130574 Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump
10/10/2000US6130560 Sense amplifier circuit
10/10/2000US6130131 Method for fabricating a flash memory
10/10/2000US6130126 Self-planarizing DRAM chip avoids edge flaking
10/05/2000WO2000059032A1 Nonvolatile memory
10/05/2000WO2000058969A1 Device with embedded flash and eeprom memories
10/05/2000DE19930117A1 Transistorised non-volatile memory cell configuration e.g. for automobile engineering applications
10/04/2000EP1041577A2 Non-volatile semiconductor memory device and data erase controlling method for use therein
10/04/2000EP1041576A2 Non-volatile record medium, recording medium, and recording apparatus
10/04/2000EP1041575A2 Editing apparatus and editing method
10/04/2000EP1041574A2 Nonvolatile memory
10/04/2000EP1041573A2 Reproducing apparatus and reproducing method
10/04/2000EP1041572A2 Nonvolatile memory and nonvolatile memory reproducing apparatus
10/04/2000EP1041570A1 Semiconductor memory
10/04/2000EP1040487A1 Method for reliably changing a value stored in a nonvolatile storage and circuit for said method
10/04/2000EP1040486A1 Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices
10/04/2000EP0931289A4 Nonvolatile writeable memory with program suspend command
10/04/2000CN1268848A Nonvolatile storage
10/04/2000CN1268847A Editing device and editing method
10/04/2000CN1268751A Non-volatile recording medium, recording method and recording device
10/04/2000CN1268706A Non volatile momory and device for reproducing same
10/04/2000CN1268437A Semi-conductor storage means
10/04/2000CN1057171C Low voltage one transistor flash EEPROM cell
10/03/2000US6128695 Identification and verification of a sector within a block of mass storage flash memory
10/03/2000US6128242 Power supply circuit and semiconductor memory device having the same
10/03/2000US6128239 MRAM device including analog sense amplifiers
10/03/2000US6128232 Method for erasing a non-volatile memory array
10/03/2000US6128231 Nonvolatile semiconductor memory device capable of optimizing program time
10/03/2000US6128230 Semiconductor memory with PN junction potential reduction in a writing mode
10/03/2000US6128229 Non-volatile semiconductor memory and method of verifying after writing and reading the same
10/03/2000US6128228 Circuit for high-precision analog reading of nonvolatile memory cells, in particular analog or multilevel flash or EEPROM memory cells
10/03/2000US6128227 Sense amplifier circuit in a flash memory device
10/03/2000US6128226 Method and apparatus for operating with a close to ground signal
10/03/2000US6128225 Method and circuit for reading low-supply-voltage nonvolatile memory cells
10/03/2000US6128224 Method and apparatus for writing an erasable non-volatile memory
1 ... 363 364 365 366 367 368 369 370 371 372 373 374 375 376 377 378 379 380 381 382 383 ... 444