Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2000
08/31/2000WO2000050997A1 Memory card, method for allotting logical address, and method for writing data
08/30/2000EP1032034A1 Method of making memory device
08/30/2000EP1031993A2 One-chip microcomputer and method of refreshing its data
08/30/2000EP1031992A2 Flash EEPROM system
08/30/2000EP1031991A1 Method for reading a multilevel nonvolatile memory and multilevel nonvolatile memory
08/30/2000EP1031929A2 Use of erasable non-volatile memory for storage of changing information
08/30/2000EP0715736B1 Memory device with switching of data stream modes
08/29/2000US6111815 Synchronous burst nonvolatile semiconductor memory
08/29/2000US6111792 Non-volatile semiconductor memory device for selective cell flash erasing/programming
08/29/2000US6111791 Circuit device and corresponding method for programming a nonvolatile memory cell having a single voltage supply
08/29/2000US6111789 Nonvolatile semiconductor memory device
08/29/2000US6111788 Method for programming and erasing a triple-poly split-gate flash
08/29/2000US6111787 Address transistion detect timing architecture for a simultaneous operation flash memory device
08/29/2000US6111786 Semiconductor electrically erasable and programmable read only memory device for concurrently writing data bits into memory cells selected from sectors and method for controlling the multi-write operation
08/29/2000US6111785 Nonvolatile semiconductor memory device capable of decreasing layout area for writing defective address
08/23/2000EP1029326A1 Programmable access protection in a flash memory device
08/23/2000EP1029278A1 Moving sequential sectors within a block of information in a flash memory mass storage architecture
08/23/2000CN1264488A Semiconductor memory with non-volatile dual transistor memory cells
08/23/2000CN1264128A Dynamic access memory capable of selecting memory module self-refresh operation
08/22/2000US6108263 Memory system, method for verifying data stored in a memory system after a write cycle and method for writing to a memory system
08/22/2000US6108259 Nonvolatile semiconductor memory device
08/22/2000US6108247 Voltage generation circuit for multivalued cell type mask ROM
08/22/2000US6108246 Semiconductor memory device
08/22/2000US6108241 Leakage detection in flash memory cell
08/22/2000US6108240 Implementation of EEPROM using intermediate gate voltage to avoid disturb conditions
08/22/2000US6108239 High-density nonvolatile memory cell
08/22/2000US6108238 Programmable semiconductor memory device having program voltages and verify voltages
08/22/2000US6108237 Fast-sensing amplifier for flash memory
08/22/2000US6108235 Memory device
08/22/2000US6108234 Semiconductor memory device capable of carrying out a read-out operation at a high speed
08/22/2000US6107659 Nonvolatile semiconductor memory device operable at high speed with low power supply voltage while preventing overerasing/overwriting
08/22/2000US6107658 Non-volatile semiconductor memory device
08/22/2000US6107141 Flash EEPROM
08/17/2000WO2000048196A1 Programmable microelectronic devices and methods of forming and programming same
08/17/2000WO2000016338A9 Flash memory array with internal refresh
08/17/2000CA2362283A1 Programmable microelectronic devices and methods of forming and programming same
08/16/2000EP1028433A1 Nonvolatile memory and reading method therefor
08/16/2000EP0896763A4 Stabilization circuits for multiple digital bits
08/16/2000CN1055568C Nonvolatile semiconductor memory storage
08/15/2000US6104668 Programmable mode register for use in synchronized memory device
08/15/2000US6104667 Clock control circuit for generating an internal clock signal with one or more external clock cycles being blocked out and a synchronous flash memory device using the same
08/15/2000US6104665 Enhanced word line driver to reduce gate capacitance for low voltage applications
08/15/2000US6104655 Semiconductor storage device
08/15/2000US6104644 Circuit for the detection of changes of address
08/15/2000US6104638 Use of erasable non-volatile memory for storage of changing information
08/15/2000US6104637 Apparatus for programming threshold voltage for non-volatile memory cell and method therefor
08/15/2000US6104636 Semiconductor memory which can store two or more bits of data in each memory cell
08/15/2000US6104635 Non-volatile memory device readable write data latch, and internal control thereof
08/15/2000US6104057 Electrically alterable non-volatile semiconductor memory device
08/15/2000US6104056 Semiconductor element and semiconductor memory device using the same
08/15/2000US6103574 Method of manufacturing non-volatile semiconductor memory device having reduced electrical resistance of a source diffusion layer
08/10/2000WO2000046857A1 Two transistor eeprom cell
08/10/2000WO2000046809A1 Semiconductor integrated circuit and nonvolatile memory element
08/10/2000WO2000046808A1 Method for initiating a retrieval procedure in virtual ground arrays
08/10/2000WO2000046807A1 Improved word line boost circuit
08/09/2000CN1262754A Computer memory organization
08/08/2000US6101587 Data protection circuit for semiconductor memory device
08/08/2000US6101131 Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
08/08/2000US6101130 Semiconductor device memory cell and method for selectively erasing the same
08/08/2000US6101129 Fast chip erase mode for non-volatile memory
08/08/2000US6101128 Nonvolatile semiconductor memory and driving method and fabrication method of the same
08/08/2000US6101127 Operating voltage selection circuit for non-volatile semiconductor memories
08/08/2000US6101126 Nonvolatile semiconductor memory device with a level shifter circuit
08/08/2000US6101125 Electrically programmable memory and method of programming
08/08/2000US6101124 Memory block for realizing semiconductor memory devices and corresponding manufacturing process
08/08/2000US6101123 Nonvolatile semiconductor memory with programming and erasing verification
08/08/2000US6101122 Data latch circuit
08/08/2000US6101121 Multi-level memory circuit with regulated reading voltage
08/08/2000US6101118 Voltage regulator for single feed voltage memory circuits, and flash type memory in particular
08/08/2000US6100746 Electrically programmable fuse
08/03/2000WO2000045438A1 Two transistor eeprom cell using p-well for tunneling across a channel
08/02/2000EP1023731A1 Sense amplifier for flash memories
08/01/2000US6097666 Nonvolatile semiconductor memory device whose addresses are selected in a multiple access
08/01/2000US6097653 Circuit and method for selectively overdriving a sense amplifier
08/01/2000US6097639 System and method for programming nonvolatile memory
08/01/2000US6097638 Semiconductor memory device
08/01/2000US6097637 Dynamic single bit per cell to multiple bit per cell memory
08/01/2000US6097636 Word line and source line driver circuitries
08/01/2000US6097635 Sensing circuit for programming/reading multilevel flash memory
08/01/2000US6097634 Latch-type sensing circuit and program-verify circuit
08/01/2000US6097633 Read circuit for non-volatile memories
08/01/2000US6097632 Source regulation circuit for an erase operation of flash memory
08/01/2000US6097631 Electrically erasable floating-gate memory organized in words
08/01/2000US6097630 Non-volatile semiconductor storage device selecting bit lines on voltage divided from word line selection voltage
08/01/2000US6097628 Multi-level memory circuit with regulated writing voltage
08/01/2000US6097213 Switching circuit with an output voltage changing among four possible values
08/01/2000US6097161 Charge pump type booster circuit
08/01/2000US6097059 Transistor, transistor array, method for manufacturing transistor array, and nonvolatile semiconductor memory
07/2000
07/27/2000WO2000044001A1 Nonvolatile semiconductor storage device
07/27/2000DE19952667A1 Non-volatile ferroelectric memory has main cell array with sub-cell arrays with global main, reference bit lines, local main, reference bit lines, switches, controllers, part word line driver
07/26/2000EP1022780A2 Method of forming a flash memory cell
07/26/2000EP1022746A2 Method of operating a two-transistor flash memory cell
07/26/2000EP1022745A2 Flash memory cell array
07/26/2000EP1022659A2 Circuit for electronic data management
07/26/2000EP0888618A4 Second-layer phase change memory array on top of a logic device
07/26/2000EP0846343A4 Electrically erasable memory elements characterized by reduced current and improved thermal stability
07/26/2000CN1261455A Synchronous page-mode non-volatile memory
07/26/2000CN1054945C An eeprom circuit, a memory device having the eeprom circuit and an iccard having the eeprom circuit
07/25/2000US6094394 Sense amplifier for non-volatile memory devices
07/25/2000US6094385 Repairable memory cell for a memory cell array
1 ... 365 366 367 368 369 370 371 372 373 374 375 376 377 378 379 380 381 382 383 384 385 ... 444