Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
07/1999
07/06/1999US5920502 Nonvolatile semiconductor memory with fast data programming and erasing function using ECC
07/06/1999US5920501 Flash memory system and method for monitoring the disturb effect on memory cell blocks due to high voltage conditions of other memory cell blocks
07/06/1999US5920225 Negative voltage drive circuit
07/01/1999WO1999033060A1 Integrated program verify page buffer
07/01/1999WO1999033059A1 Method for reliably changing a value stored in a nonvolatile storage and circuit for said method
07/01/1999WO1999033057A1 Technique for increasing endurance of integrated circuit memory
07/01/1999WO1999018509A9 Moving sequential sectors within a block of information in a flash memory mass storage architecture
07/01/1999DE19857610A1 Method for programming power independent memory modules with cell matrix of NAND type
06/1999
06/30/1999EP0926737A2 A screened EEPROM cell
06/30/1999EP0926687A1 Self-test and correction of loss of charge errors in a flash memory, erasable and programmable by sectors thereof
06/30/1999EP0926686A1 Non-volatile, serial-flash, EPROM, EEPROM and flash-EEPROM type memory in AMG configuration
06/30/1999EP0926683A2 Semiconductor memory
06/30/1999EP0926601A1 Data protection method for a semiconductor memory and corresponding protected memory device
06/30/1999EP0925609A1 Stacked read-only memory
06/30/1999EP0925586A1 Fowler-nordheim (f-n) tunneling for pre-programming in a floating gate memory device
06/30/1999EP0925178A1 Memory device using movement of protons
06/30/1999EP0840929A4 Flash memory erase with controlled band-to-band tunneling current
06/30/1999EP0797827A4 Storage cell for analog recording and playback
06/30/1999CN1221193A Non-volatile semiconductor memory
06/30/1999CN1221124A Semiconductor display device, correcting system and correcting method of semiconductor display device
06/29/1999US5917768 Memory architecture for flexible reading management, particularly for non-volatile memories, having noise-immunity features, matching device performance, and having optimized throughout
06/29/1999US5917767 Semiconductor storage device
06/29/1999US5917757 Flash memory with high speed erasing structure using thin oxide semiconductor devices
06/29/1999US5917756 Nonvolatile semiconductor memory cell capable of saving overwritten cell and its saving method
06/29/1999US5917755 Flash memory system having fast erase operation
06/29/1999US5917754 Semiconductor memory having a current balancing circuit
06/29/1999US5917753 Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells
06/29/1999US5917752 Nonvolatile semiconductor memory device
06/29/1999US5917751 Nonvolatile semiconductor memory device
06/29/1999US5917750 Nonvolatile semiconductor memory with a protect circuit
06/29/1999US5917743 Content-addressable memory (CAM) for a FLASH memory array
06/29/1999US5917366 Voltage booster circuit and a voltage drop circuit with changeable operating levels
06/29/1999US5917354 Circuit for resetting output of positive/negative high voltage generating circuit to VCC/VSS
06/29/1999US5917178 Identifier token with electronic circuitry and conductor means in the token external to the circuitry for realizing an identifier code
06/24/1999WO1999031779A1 High voltage nmos switch design
06/24/1999WO1999031670A2 A symmetric segmented memory array architecture
06/24/1999WO1999031669A1 Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices
06/24/1999WO1999031668A1 Reprogrammable memory device with variable page size
06/24/1999WO1999031666A1 High speed, noise immune, single ended sensing scheme for non-volatile memories
06/24/1999DE19858683A1 Step-up voltage converter circuit for erasing and writing EEPROM data in computer system
06/23/1999EP0924768A2 Nonvolatile semiconductor memory device and method for driving the same
06/23/1999CN1220469A Programmable ROM having on-chip error recovery circuit
06/23/1999CN1220466A Semiconductor memory having hierarchical bit line and/or word line architecture
06/23/1999CN1220424A External storage apparatus and data processing method
06/22/1999US5915080 Reprogramming device of a flash memory
06/22/1999US5914903 Semiconductor memory device
06/22/1999US5914901 Integrated circuit for generating initialization signals for memory cell sensing circuits
06/22/1999US5914896 Flash memory with high speed erasing structure using thin oxide and thick oxide semiconductor devices
06/22/1999US5914514 Two transistor flash EPROM cell
06/22/1999US5914509 Two-terminal electrically-reprogrammable programmable logic element
06/22/1999CA2158959C Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
06/17/1999WO1999030326A1 Memory driver with variable voltage modes
06/17/1999WO1999030324A1 Integrated circuit with flag register for block selection of nonvolatile cells for bulk operations
06/17/1999WO1999030219A1 Method and apparatus for in-system programming
06/17/1999WO1999030216A1 Internal cmos reference generator and voltage regulator
06/17/1999CA2294797A1 Integrated circuit with flag register for block selection of nonvolatile cells for bulk operations
06/16/1999EP0923135A1 Ferroelectric memory device
06/16/1999EP0923082A2 Semiconductor memory having a sense amplifier
06/16/1999EP0923081A2 Method for writing and/or erasing a flash EPROM
06/16/1999EP0852056B1 Sram storage cell
06/16/1999EP0783756A4 Non-volatile electrically alterable semiconductor memory for analog and digital storage
06/16/1999EP0549374B1 Nonvolatile semiconductor memory
06/15/1999US5912937 CMOS flip-flop having non-volatile storage
06/15/1999US5912849 Semiconductor memory device
06/15/1999US5912848 Methods and apparatus for efficiently managing flash memory
06/15/1999US5912845 Method and circuit for substrate current induced hot e- injection (SCIHE) approach for VT convergence at low VCC voltage
06/15/1999US5912844 Method for flash EEPROM data writing
06/15/1999US5912843 Scalable flash EEPROM memory cell, method of manufacturing and operation thereof
06/15/1999US5912842 Nonvolatile PMOS two transistor memory cell and array
06/15/1999US5912841 Repair fuse circuit performing complete latch operation using flash memory cell
06/15/1999US5912840 Memory cell architecture utilizing a transistor having a dual access gate
06/15/1999US5912839 Parallel processing network
06/15/1999US5912838 Apparatus for reading state of multistate non-volatile memory cells
06/15/1999US5912837 Bitline disturb reduction
06/15/1999US5912836 Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array
06/15/1999US5912835 Non-volatile ferroelectric memory device for storing data bits restored upon power-on and intermittently refreshed
06/15/1999US5912489 Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory
06/15/1999US5912488 Stacked-gate flash EEPROM memory devices having mid-channel injection characteristics for high speed programming
06/10/1999WO1999028914A2 Programmable sub-surface aggregating metallization structure and method of making same
06/10/1999WO1999009319A8 Two stage reciprocating compressors and associated hvac systems and methods
06/10/1999DE19825744A1 Semiconductor integrated circuit, manufactured using CMOS process
06/09/1999EP0875063B1 Voltage multiplier
06/09/1999EP0860011B1 Method and device for automatic determination of the required high voltage for programming/erasing an eeprom
06/09/1999EP0819308B1 Flash programming of flash eeprom array
06/08/1999US5910925 EEPROM with split gate source side injection
06/08/1999US5910920 High speed input buffer
06/08/1999US5910918 Data writing circuit for a nonvolatile semiconductor memory
06/08/1999US5910917 Multi-chip IC memory device with a single command controller and signal clock generator
06/08/1999US5910916 Flash-erasable semiconductor memory device having improved reliability
06/08/1999US5910915 EEPROM with split gate source side injection
06/08/1999US5910914 Sensing circuit for a floating gate memory device having multiple levels of storage in a cell
06/08/1999US5910913 Non-volatile semiconductor memory
06/08/1999US5910912 Flash EEPROM with dual-sidewall gate
06/08/1999US5910016 Scalable EPROM array
06/03/1999WO1999027539A1 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
06/03/1999WO1999027538A1 Zero power high speed configuration memory
06/03/1999WO1999027537A1 On chip voltage generation for low power integrated circuits
06/03/1999WO1999027453A1 Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
06/03/1999WO1999014672A3 Method and device for monitoring an automatic process to ensure that it is executed correctly
06/03/1999CA2278615A1 Zero power high speed configuration memory
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