Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
01/2003
01/09/2003US20030007387 CG-WL voltage boosting scheme for twin MONOS
01/09/2003US20030007386 Nonvolatile nor semiconductor memory device and method for programming the memory device
01/09/2003US20030007385 Non-volatile semiconductor memory
01/09/2003US20030007384 Nonvolatile semiconductor memory device
01/09/2003US20030007383 Memory device with non-volatile reference memory cell trimming capabilities
01/09/2003US20030007379 Directional coupling memory module
01/09/2003US20030006825 Charge pump circuit for use in high voltage generating circuit
01/09/2003US20030006823 Semiconductor integrated circuit device having boosting circuit
01/09/2003US20030006805 Tunable circuit for detection of negative voltages
01/09/2003US20030006742 Memory circuit including booster pump for programming voltage generation
01/09/2003US20030006450 Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure
01/09/2003US20030006432 Nonvolatile semiconductor memory device
01/08/2003EP1274097A2 Verification of data in a memory device
01/08/2003EP1274096A2 Control gate and word line voltage boosting scheme for twin MONOS memory cells
01/08/2003EP1274095A2 Twin MONOS cell array metal bitline organization and single cell operation
01/08/2003EP1274094A2 Bit line decoding scheme and circuit for dual bit memory with a dual bit selection
01/08/2003EP1274093A2 A control gate decoder for twin MONOS memory with two bit erase capability
01/08/2003EP1274092A2 Data storage device with array of nanotubes as electron sources
01/08/2003EP1274091A1 Nonvolatile semiconductor memory device with block architecture and minimized load on the internal voltage supply
01/08/2003EP1274090A1 Non-volatile semiconductor memory device and information apparatus
01/08/2003EP1272935A1 Unauthorised modification of values stored in flash memory
01/08/2003EP1272109A1 Physiological condition monitors utilizing very low frequency acoustic signals
01/08/2003EP1125302B1 A scheme for page erase and erase verify in a non-volatile memory array
01/08/2003CN2530328Y Portable fast flash memory of USB
01/08/2003CN1390354A Controlling burst sequence in synchronous memories
01/08/2003CN1389927A 半导体器件及电子装置 Semiconductor devices and electronic equipment
01/08/2003CN1389925A Nonvolatile semiconductor memory
01/08/2003CN1389924A Nonvolatile semiconductor memory device
01/08/2003CN1389923A Nonvolatile semiconductor memory device
01/08/2003CN1389921A Nonvolatile semiconductor memory device
01/08/2003CN1389876A Programmed single unit switching device
01/08/2003CN1389875A Inner connecting element capable of programming bus and I/O pads in one of four states
01/08/2003CN1389874A Programmand non-volatile unit switching device
01/08/2003CN1389873A 半导体存储器 Semiconductor memory
01/08/2003CN1389790A Flash storage management method
01/07/2003US6505280 Memory writing device for an electronic device
01/07/2003US6504791 Method for page mode writing in an electrically erasable/programmable non-volatile memory and corresponding architecture
01/07/2003US6504789 Semiconductor memory device
01/07/2003US6504778 Semiconductor memory device
01/07/2003US6504773 Memory testing method and memory testing apparatus
01/07/2003US6504765 Flash memory device and method of erasing the same
01/07/2003US6504764 Non-volatile memory device
01/07/2003US6504763 Nonvolatile semiconductor memory capable of random programming
01/07/2003US6504762 Highly compact EPROM and flash EEPROM devices
01/07/2003US6504761 Non-volatile semiconductor memory device improved sense amplification configuration
01/07/2003US6504760 Charging a capacitance of a memory cell and charger
01/07/2003US6504759 Double-bit non-volatile memory unit and corresponding data read/write method
01/07/2003US6504758 Control circuit for a variable-voltage regulator of a nonvolatile memory with hierarchical row decoding
01/07/2003US6504757 Double boosting scheme for NAND to improve program inhibit characteristics
01/07/2003US6504756 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation
01/07/2003US6504755 Semiconductor memory device
01/07/2003US6504754 Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
01/07/2003US6504748 Ferroelectric random access memory device
01/07/2003US6504207 Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same
01/07/2003US6504206 Polysilicon sidewalls on a semiconductor substrate
01/07/2003US6504191 Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor
01/07/2003US6503785 Flash memory cell with contactless bit line, and process of fabrication
01/03/2003WO2003001530A2 Erase method for dual bit virtual ground flash
01/03/2003WO2003001348A2 Control unit
01/02/2003US20030005184 Soft programming for recovery of overerasure
01/02/2003US20030003691 Reduced area intersection between electrode and programming element
01/02/2003US20030002375 Memory arrangement
01/02/2003US20030002374 Charging a capacitance of a memory cell and charger
01/02/2003US20030002372 Charging circuit and semiconductor memory device using the same
01/02/2003US20030002366 Life warning generation system and method of semiconductor storage device equipped with flash memory
01/02/2003US20030002352 Circuit for clamping word-line voltage
01/02/2003US20030002348 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
01/02/2003US20030002347 Nonvolatile semiconductor memory device
01/02/2003US20030002346 Electrically erasable programmable read-only memory
01/02/2003US20030002345 Programming and erasing methods for an NROM array
01/02/2003US20030002344 Programming method for non-volatile semiconductor memory device
01/02/2003US20030002343 Programming method for non-volatile semiconductor memory device
01/02/2003US20030002342 Method and apparatus for sen-ref equalization
01/02/2003US20030002341 Charging a capacitance of a memory cell and charger
01/02/2003US20030002340 NAND-type memory array and method of reading, programming and erasing using the same
01/02/2003US20030002339 Global/local memory decode with independent program and read paths and shared local decode
01/02/2003US20030002337 Flash memory device
01/02/2003US20030002335 Nonvolatile memory, cell array thereof, and method for sensing data therefrom
01/02/2003US20030002334 Method of programming/reading multi-level flash memory using sensing circuit
01/02/2003US20030002332 Programming a phase-change material memory
01/02/2003US20030002331 Programming a phase-change memory with slow quench time
01/02/2003US20030001230 Three dimensional programmable device and method for fabricating the same
01/02/2003US20030001195 Non-volatile semiconductor memory having a decreased gate length and manufacturing method thereof
01/02/2003EP1271553A2 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory in multiple-data states
01/02/2003EP1271552A2 A method of refreshing an electrically erasable and programmable non-volatile memory
01/02/2003EP1271551A2 Semiconductor memory device and information device
01/02/2003EP1271550A2 Method and device for reading dual bit memory cells using multiple reference cells with two side read
01/02/2003EP1271549A1 Eeprom circuit, voltage reference circuit and method for providing a low temperature-coefficient voltage reference
01/02/2003EP1271544A1 Charging circuit and semiconductor memory device using the same
01/02/2003EP1271541A2 Data storing circuit and data processing apparatus
01/02/2003EP1269478A2 Page mode erase in a flash memory array
01/02/2003EP1269477A2 Memory cell with doped nanocrystals, method of formation, and operation
01/02/2003EP1269476A2 Synchronous flash memory
01/02/2003EP1269474A2 Symmetrical protection scheme for first and last sectors of synchronous flash memory
01/02/2003EP1269473A2 Synchronous flash memory with non-volatile mode register
01/02/2003EP1269472A2 Elimination of precharge operation in synchronous flash memory
01/02/2003EP1082763A4 Nrom cell with improved programming, erasing and cycling
01/02/2003EP0979489A4 Memory driver with variable voltage modes
01/01/2003CN1388576A Method of determining characteristics of split-gate memory cell
01/01/2003CN1388575A Method for clearing FAMOS storing cell and related store cell