Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/2002
10/15/2002US6466671 Smartcard for use with a receiver of encrypted broadcast signals, and receiver
10/15/2002US6466508 Semiconductor memory device having high-speed read function
10/15/2002US6466503 Semiconductor memory with current distributor
10/15/2002US6466498 Discontinuity-based memory cell sensing
10/15/2002US6466488 Reduction of data dependent power supply noise when sensing the state of a memory cell
10/15/2002US6466487 Semiconductor device with impedance controllable output buffer
10/15/2002US6466486 Buffer circuit, and semiconductor device and semiconductor memory device including same
10/15/2002US6466484 Nonvolatile semiconductor memory device capable of suppressing reduction of bit line potential in write-back operation and erase method
10/15/2002US6466483 Piggyback programming using timing control for multi-level cell flash memory designs
10/15/2002US6466482 Semiconductor device
10/15/2002US6466481 Device and method for programming nonvolatile memory cells with automatic generation of programming voltage
10/15/2002US6466480 Method and apparatus for trimming non-volatile memory cells
10/15/2002US6466479 Non-volatile memory matrix architecture with vertical insulation strips between adjacent memory blocks
10/15/2002US6466478 Non-volatile semiconductor memory device
10/15/2002US6466477 Method of stabilizing reference bit of multi-bit memory cell
10/15/2002US6466059 Sense amplifier for low voltage memories
10/15/2002US6465818 Semiconductor memory device capable of performing data writing or erasing operation and data reading operation in parallel
10/15/2002US6465375 Single electron MOSFET memory device and method
10/10/2002WO2002080283A1 Nonvolatile memory array structure and its operating method
10/10/2002WO2002080182A2 Method, apparatus, and system to enhance negative voltage switching
10/10/2002WO2002080181A2 I/o partitioning system and methodology to reduce band-to-band tunneling current during erase
10/10/2002WO2002080178A2 System and method for achieving fast switching of analog voltages on a large capacitive load
10/10/2002WO2002029822A3 Portable programming system and control method therefor
10/10/2002US20020145931 Method and apparatus for storing data in an integrated circuit
10/10/2002US20020145918 Architecture and scheme for a non-strobed read sequence
10/10/2002US20020145916 Leakage detection in programming algorithm for a flash memory device
10/10/2002US20020145915 Process for making and programming and operating a dual-bit multi-level ballistic flash memory
10/10/2002US20020145914 Process for making and programming and operating a dual-bit multi-level ballistic flash memory
10/10/2002US20020145913 Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
10/10/2002US20020145912 Non-volatile memory device with erase register
10/10/2002US20020145911 Method for programming a reference cell
10/10/2002US20020145910 Evaluation circuit for reading out an information item stored in a memory cell
10/10/2002US20020145909 Device and method for timing the reading a nonvolatile memory with reduced switching noise
10/10/2002US20020145908 Non-volatile memory device having high speed page mode operation
10/10/2002US20020145907 Non-volatile semiconductor memory device having word line defect check circuit
10/10/2002US20020145906 Nonvolatile semiconductor memory with improved sense amplifier operating margin
10/10/2002US20020145466 Internal power voltage generating circuit of semiconductor device
10/10/2002US20020145161 Multi-level type nonvolatile semiconductor memory device
10/10/2002US20020145160 Nonvolatile memory cell
10/10/2002US20020145159 Semiconductor device
10/10/2002DE10110959C1 Memory cell programming voltage circuit has source-drain path between comparator input and generated voltage providing breakdown current when gate voltage exceeds breakdown voltage
10/09/2002EP1248268A1 Word-programmable EEPROM with double-function column selection latches
10/09/2002EP1248263A1 Method for programming a reference cell
10/09/2002EP1248260A1 Architecture and scheme for a non-strobed read sequence
10/09/2002EP1010331B1 Method of and apparatus for transmitting data for interactive tv applications
10/09/2002EP0784852B1 High speed, low voltage non-volatile memory
10/09/2002CN1373518A Nonvolatile flash memory cell with dual-bit-channel grid and its operating method
10/09/2002CN1373517A Embedded flash memory and its operating method
10/09/2002CN1373507A Low-voltage flash memory cell erased/written via channel and its preparing process
10/08/2002US6463516 Variable sector size for a high density flash memory device
10/08/2002US6463004 VPX bank architecture
10/08/2002US6462995 Semiconductor memory device capable of recovering defective bit and a system having the same semiconductor memory device
10/08/2002US6462992 Flash EEprom system
10/08/2002US6462991 Method of erasing data stored in a nonvolatile memory
10/08/2002US6462990 Post erase repair to enhance performance in a flash memory
10/08/2002US6462988 Highly compact EPROM and flash EEPROM devices
10/08/2002US6462987 Direct-comparison reading circuit for a nonvolatile memory array
10/08/2002US6462986 Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
10/08/2002US6462985 Non-volatile semiconductor memory for storing initially-setting data
10/08/2002US6461916 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the device
10/03/2002WO2002078102A2 Fabricating a molecular electronic device having a protective barrier layer
10/03/2002WO2002078008A2 Independent asynchronous boot block for synchronous non-volatile memory devices
10/03/2002WO2002078007A1 Integrated logic circuit
10/03/2002WO2002077787A2 Method, apparatus, and system to enhance an interface of a flash memory device
10/03/2002WO2002058074A9 Partial block data programming and reading operations in a non-volatile memory
10/03/2002US20020144066 Status register architecture for flexible read-while-write device
10/03/2002US20020144052 Microcomputer
10/03/2002US20020144051 Memory arrangement and method for reading from a memory arrangement
10/03/2002US20020144035 Microcomputer and data processing device
10/03/2002US20020141263 Semiconductor memory
10/03/2002US20020141250 Method, apparatus, and system to enhance negative voltage switching
10/03/2002US20020141249 Method, apparatus, and system to enhance negative voltage switching
10/03/2002US20020141246 Output buffer capable of adjusting current drivability and semiconductor integrated circuit device having the same
10/03/2002US20020141244 Parallel erase operations in memory systems
10/03/2002US20020141243 Nonvolatile semiconductor memory device achieving shorter erasure time
10/03/2002US20020141242 Data writing method for semiconductor memory device and semiconductor memory device
10/03/2002US20020141241 Testing method for a reading operation in a non volatile memory
10/03/2002US20020141240 Semiconductor device and a integrated circuit card
10/03/2002US20020141239 Split common source on eeprom array
10/03/2002US20020141238 Method and system for distributed power generation in multi-chip memory systems
10/03/2002US20020141237 Semiconductor memory
10/03/2002US20020141236 Non-volatile semiconductor memory device conducting data write and erase operations based on a prescribed unit region
10/03/2002US20020141235 Method and apparatus for trimming non-volatile memory cells
10/03/2002US20020140490 System and method for achieving fast switching of analog voltages on a large capacitive load
10/03/2002US20020140463 Programmable soft-start control for charge pump
10/03/2002US20020140051 Three-dimensional memory array and method of fabrication
10/03/2002US20020139999 Nonvolatile semiconductor memory device and method of erasing the same
10/03/2002CA2441898A1 Independent asynchronous boot block for synchronous non-volatile memory devices
10/02/2002EP1246201A2 Semiconductor memory
10/02/2002EP1246198A1 Nonvolatile semiconductor memory device achieving shorter erasure time
10/02/2002EP1246197A1 Circuit and method for erasing or programming a memory cell
10/02/2002EP1246196A2 Twin MONOS memory cell usage for wide program bandwidth
10/02/2002EP1246195A2 Non-volatile semiconductor memory and its driving method
10/02/2002EP1246193A2 Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
10/02/2002EP1245030A1 Memory device
10/02/2002EP0961289B1 Flash memory with improved erasability and its circuitry
10/02/2002EP0699345B1 A fast access amg eprom with segment select transistors which have an increased width and method of manufacture
10/02/2002CN1372689A Single transistor cell of EEPROM application
10/02/2002CN1372326A Indium surfide and gallium surfide for ultrahigh density data storage device and phase transformation meidum of indium-gallium surfide
10/01/2002US6460145 Storage device data processing system and data writing and readout method
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