Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2003
06/11/2003EP1317756A2 Compressed event counting technique and application to a flash memory system
06/11/2003EP0888618B1 Second-layer phase change memory array on top of a logic device
06/11/2003CN1423343A Semiconductor of storage unit storage unit storing multiple places and driving method thereof
06/11/2003CN1423334A Storage device with storage unit with four states
06/11/2003CN1423278A High-density integrated circuit with memory array
06/11/2003CN1111118C Memory expansion circuit for ink jet print head identification circuit
06/10/2003US6578124 Serial command port method, circuit, and system including main and command clock generators to filter signals of less than a predetermined duration
06/10/2003US6577555 Apparatus for externally timing high voltage cycles of non-volatile memory system
06/10/2003US6577540 Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
06/10/2003US6577539 Non-volatile semiconductor memory device with programming voltage generating system and data programming method
06/10/2003US6577538 Channel-erase nonvolatile semiconductor memory device
06/10/2003US6577537 Flash memory cell for high efficiency programming
06/10/2003US6577536 Flat-cell nonvolatile semiconductor memory
06/10/2003US6577535 Method and system for distributed power generation in multi-chip memory systems
06/10/2003US6577534 Non-volatile semiconductor memory device having a low defective rate
06/10/2003US6577533 Nonvolatile semiconductor memory and method of manufacturing the same
06/10/2003US6577532 Method for performing analog over-program and under-program detection for a multistate memory cell
06/10/2003US6577531 Nonvolatile memory and semiconductor device
06/10/2003US6577530 Semiconductor memory device having memory cells each capable of storing three or more values
06/10/2003US6577162 Step-up circuit
06/10/2003US6577161 One cell programmable switch using non-volatile cell with unidirectional and bidirectional states
06/10/2003US6576943 Semiconductor device for reducing leak currents and controlling a threshold voltage and using a thin channel structure
06/10/2003US6576921 By coupling the gate of the MOS transistor to the row line, reverse bias current in unselected cells or in the standby mode may be reduced
06/05/2003WO2003047163A2 Semiconductor device having a byte-erasable eeprom memory
06/05/2003WO2003047100A1 Oscillator circuit, booster circuit, nonvolatile memory device, and semiconductor device
06/05/2003WO2002049039A3 Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory
06/05/2003US20030105941 Fast programming method for nonvolatile memories, in particular flash memories, and relative memory architecture
06/05/2003US20030105916 Semiconductor memory device
06/05/2003US20030103406 Digital multilevel memory system having multistage autozero sensing
06/05/2003US20030103400 Multistage autozero sensing for a multilevel non-volatile memory integrated circuit system
06/05/2003US20030103398 Sub-volt sensing for digital multilevel flash memory
06/05/2003US20030103394 Semiconductor storage device and method for remedying defects of memory cells
06/05/2003US20030103392 Method of controlling the operation of non-volatile semiconductor memory chips
06/05/2003US20030103388 Non-volatile semiconductor memory apparatus
06/05/2003US20030103385 Method pf processing a write command
06/05/2003US20030103384 Semiconductor memory and method of driving the same
06/05/2003US20030103383 Method for programming and erasing non-volatile memory with nitride tunneling layer
06/05/2003US20030103382 Nonvolatile semiconductor memory device and manufacturing method thereof
06/05/2003US20030103381 Threshold voltage convergence
06/05/2003US20030103380 Programming methods for multi-level flash EEPROMs
06/05/2003US20030103379 Semiconductor memory device
06/04/2003EP1316965A1 Nonvolatile semiconductor memory device and overerase correction method
06/04/2003EP1316964A2 Non-volatile semiconductor memory device and memory system using the same
06/04/2003EP1316963A2 Non-volatile semiconductor memory device and memory system using the same
06/04/2003EP1038298A4 Integrated circuit with flag register for block selection of nonvolatile cells for bulk operations
06/04/2003EP0861491B1 Method and system for soft programming algorithm
06/04/2003CN1421997A Semiconductor boosted circuit of transistor without breakdown voltage being two times of power supply voltage
06/04/2003CN1110819C High read speed multivalued read only memory device
06/03/2003US6574162 Semiconductor memory device utilizing access to memory area located outside main memory area
06/03/2003US6574152 Circuit design for accepting multiple input voltages for flash EEPROM memory operations
06/03/2003US6574149 Semiconductor memory and its usage
06/03/2003US6574148 Dual bit line driver for memory
06/03/2003US6574147 Electrically erasable and programmable nonvolatile semiconductor memory with automatic write-verify controller
06/03/2003US6574143 Memory device using hot charge carrier converters
06/03/2003US6574142 Integrated circuit with flash memory
06/03/2003US6574141 Differential redundancy multiplexor for flash memory devices
06/03/2003US6574140 Low voltage single supply CMOS electrically erasable read-only memory
06/03/2003US6574139 Method and device for reading dual bit memory cells using multiple reference cells with two side read
05/2003
05/30/2003WO2003044869A1 Transistor and semiconductor memory comprising it
05/30/2003WO2003044868A1 Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
05/30/2003WO2003044803A2 Sense amplifier for multilevel non-volatile integrated memory devices
05/30/2003WO2003044802A2 Complementary bit pcram (programmable conductor ram) and method of operation
05/29/2003US20030101405 Semiconductor memory device
05/29/2003US20030101390 Background block erase check for flash memories
05/29/2003US20030100980 Method and device for programming a control unit
05/29/2003US20030099134 Detecting partially erased units in flash devices
05/29/2003US20030099133 Flash memory device
05/29/2003US20030099132 Semiconductor memory device including bit select circuit
05/29/2003US20030098737 Semiconductor booster circuit requiring no transistor elements having a breakdown voltage of substantially twice the power supply voltage
05/28/2003EP1315214A2 Semiconductor memory having storage cells storing multiple bits and a method of driving the same
05/28/2003EP1315171A2 Non-volatile semiconductor memory device and memory system using the same
05/28/2003EP1315170A2 Multibit memory device
05/28/2003EP1315169A2 Booster circuit for semiconductor device
05/28/2003EP1314087A1 Nonvolatile fuse in redundancy circuit for low-voltage flash memories
05/28/2003EP1070323B1 Page mode erase in a flash memory array
05/28/2003EP0813751B1 Series capacitor charge pump
05/28/2003CN1420500A Fast-access memory rewriting circuit and method
05/28/2003CN1110053C Method for writing data in EEPROM array
05/27/2003US6571312 Data storage method and data processing device using an erasure block buffer and write buffer for writing and erasing data in memory
05/27/2003US6571311 Programmable nonvolatile memory apparatus and microcomputer using the same
05/27/2003US6571307 Multiple purpose bus for a simultaneous operation flash memory device
05/27/2003US6570810 Contactless flash memory with buried diffusion bit/virtual ground lines
05/27/2003US6570809 Real-time multitasking flash memory with quick data duplication
05/27/2003US6570791 Flash memory with DDRAM interface
05/27/2003US6570790 Highly compact EPROM and flash EEPROM devices
05/27/2003US6570789 Load for non-volatile memory drain bias
05/27/2003US6570788 Semiconductor device and method of driving and method of producing the same
05/27/2003US6570787 Programming with floating source for low power, low leakage and high density flash memory devices
05/27/2003US6570786 NAND-type memory array and method of reading, programming and erasing using the same
05/27/2003US6570785 Method of reducing disturbs in non-volatile memory
05/27/2003US6570784 Programming a phase-change material memory
05/27/2003US6570212 Complementary avalanche injection EEPROM cell
05/27/2003US6568510 Flash memory including means of checking memory cell threshold voltages
05/22/2003WO2003043014A1 Voltage booster for non-volatile memories
05/22/2003WO2003042827A2 Comparison of replicated data
05/22/2003US20030097609 Flash EEprom system
05/22/2003US20030097605 Range check cell and a method for the use thereof
05/22/2003US20030095463 Non-volatile semiconductor memory device with enhanced erase/write cycle endurance
05/22/2003US20030095455 Semiconductor integrated circuit
05/22/2003US20030095453 Read amplifier with a low current consumption differential output stage