Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
03/2003
03/11/2003US6532579 Semiconductor integrated circuit and design method and manufacturing method of the same
03/11/2003US6532514 System and method for handling a power supply interruption in a non-volatile memory
03/11/2003US6532186 Semiconductor memory device having sensing power driver
03/11/2003US6532181 Semiconductor memory device having redundant circuitry for replacing defective memory cell
03/11/2003US6532178 Reducing level shifter standby power consumption
03/11/2003US6532176 Non-volatile memory array with equalized bit line potentials
03/11/2003US6532175 Method and apparatus for soft program verification in a memory device
03/11/2003US6532174 Semiconductor memory device having high speed data read operation
03/11/2003US6532173 Nonvolatile semiconductor memory device with mechanism to prevent leak current
03/11/2003US6532172 Steering gate and bit line segmentation in non-volatile memories
03/11/2003US6532171 Nonvolatile semiconductor memory capable of selectively erasing a plurality of elemental memory units
03/11/2003US6532170 Nonvolatile configuration cells and cell arrays
03/11/2003US6532169 SONOS latch and application
03/11/2003US6531887 One cell programmable switch using non-volatile cell
03/11/2003US6531735 Semiconductor integrated circuit
03/11/2003US6531734 Self-aligned split-gate flash memory cell having an integrated source-side erase structure and its contactless flash memory arrays
03/11/2003US6531732 Nonvolatile semiconductor memory device, process of manufacturing the same and method of operating the same
03/11/2003US6531373 Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements
03/06/2003WO2003019664A2 Non-volatile semiconductor memory
03/06/2003WO2003019573A1 Non-volatile semiconductor memory and method of operating the same
03/06/2003WO2003019565A2 Non-volatile memory with block erase
03/06/2003WO2002082447A3 Soft program and soft program verify of the core cells in flash memory array
03/06/2003US20030046631 Error correction scheme for use in flash memory allowing bit alterability
03/06/2003US20030046603 Flash EEprom system
03/06/2003US20030046504 ROM-data read-protection-cancellation device with improved access authority check
03/06/2003US20030046487 Refresh algorithm for memories
03/06/2003US20030046483 Bit inversion in memory devices
03/06/2003US20030046481 Method and apparatus for reducing the number of programmed bits in a memory array
03/06/2003US20030046480 Integrated circuit with programmable locking circuit
03/06/2003US20030045082 Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
03/06/2003US20030045037 Thin film transistor memory device
03/06/2003US20030043686 Non-volatile semiconductor memory device having shared row selection circuit
03/06/2003US20030043670 Memory control apparatus for serial memory
03/06/2003US20030043661 Non-volatile memory with test rows for disturb detection
03/06/2003US20030043651 Semiconductor storage device and setting method thereof
03/06/2003US20030043647 Non-volatile semiconductor memory device
03/06/2003US20030043636 Non-volatile memory with address descrambling
03/06/2003US20030043635 Method of erasing data stored in a nonvolatile memory
03/06/2003US20030043634 Semiconductor memory device with block-unit erase type nonvolatile memory
03/06/2003US20030043633 Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
03/06/2003US20030043632 Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
03/06/2003US20030043631 Method of retaining memory state in a programmable conductor RAM
03/06/2003US20030043630 Low tunnel barrier intergate insulator includes insulator comprising oxide of nickel, aluminum, tantalum, titantium, zirconium, niobium, yttrium, gadolinium; strontium orlead titanate; lead zirconate; or strontium-bismuth tantalate
03/06/2003US20030043629 Nonvolatile semiconductor memory device that can suppress effect of threshold voltage variation of memory cell transistor
03/06/2003US20030043628 Non-volatile semiconductor memory device with accelerated column scanning scheme
03/06/2003US20030043627 Internal data transfer
03/06/2003US20030043626 Flash memory
03/06/2003US20030043625 Flash memory with RDRAM interface
03/06/2003US20030043624 Flash memory with DDRAM interface
03/06/2003US20030043623 Nonvolatile semiconductor memory device
03/06/2003US20030042532 In service programmable logic arrays with low tunnel barrier interpoly insulators
03/06/2003US20030042527 Programmable array logic or memory devices with asymmetrical tunnel barriers
03/06/2003US20030042523 Semiconductor integrated circuit device having link element
03/05/2003EP1289024A1 FAMOS memory cell with several programmation logic levels
03/05/2003EP1289023A2 Nonvolatile semiconductor memory device, fabricating method thereof and operation method thereof
03/05/2003EP1289018A2 Nonvolatile semiconductor memory device having divided bit lines
03/05/2003EP1288965A2 Nonvolatile semiconductor memory devices
03/05/2003EP1288964A2 Non-volatile semiconductor memory
03/05/2003EP1288963A2 Semiconductor integrated circuit
03/05/2003EP1288956A2 Memory expansion circuit
03/05/2003EP1288840A1 SIM card backup system
03/05/2003EP1287530A1 Reduction of data dependent power supply noise when sensing the state of a memory cell
03/05/2003EP1287527A2 Programming of nonvolatile memory cells
03/05/2003EP1203378B1 Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash eeprom
03/05/2003CN1400608A 非挥发性存储器电路 Non-volatile memory circuit
03/04/2003US6529441 Memory and a data processor including a memory
03/04/2003US6529420 Redundant decoder circuit
03/04/2003US6529418 Non-volatile semiconductor memory device conducting data write and erase operations based on a prescribed unit region
03/04/2003US6529417 Source regulation circuit for flash memory erasure
03/04/2003US6529416 Parallel erase operations in memory systems
03/04/2003US6529415 Nonvolatile semiconductor memory device achieving shorter erasure time
03/04/2003US6529414 Nonvolatile semiconductor memory device including a circuit for providing a boosted potential
03/04/2003US6529413 Method for preventing over-erasing of memory cells and flash memory device using the same
03/04/2003US6529412 Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge
03/04/2003US6529411 Reference voltage generator circuit for nonvolatile memory
03/04/2003US6529410 NAND array structure and method with buried layer
03/04/2003US6529409 Integrated circuit for concurrent flash memory with uneven array architecture
03/04/2003US6529408 Semiconductor storage device and method for evaluating the same
03/04/2003US6529407 Semiconductor device with improved latch arrangement
03/04/2003US6529405 Circuit and method for programming and reading multi-level flash memory
03/04/2003US6528896 Scalable two transistor memory device
03/04/2003US6528845 Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
03/04/2003US6528843 Self-aligned split-gate flash memory cell having a single-side tip-shaped floating-gate structure and its contactless flash memory arrays
03/04/2003US6528842 Electronically erasable memory cell using CMOS technology
03/04/2003US6528839 Semiconductor integrated circuit and nonvolatile memory element
02/2003
02/27/2003WO2003017350A2 Ic-chip with protective structure
02/27/2003WO2003017285A1 Nonvolatile memory on soi and compound semiconductor substrates and methods of fabrication
02/27/2003WO2003017284A1 Programming an electronic device including a non-volatile memory, in particular for adjusting the features of an oscillator
02/27/2003WO2003017283A1 Synchronous flash memory with virtual segment architecture
02/27/2003WO2003017108A1 Storage device having non-volatile memory
02/27/2003WO2003003219A1 Non-volatile memory control method
02/27/2003WO2002095592A3 Method and apparatus to provide real-time access to flash memory features
02/27/2003WO2002067269A3 Method and system for distributed power generation in multi-chip memory systems
02/27/2003WO2002067265A3 Electronic circuit and method for accessing non-volatile memory
02/27/2003US20030041299 Memory controller for multilevel cell memory
02/27/2003US20030041217 Memory writing device for an electronic device
02/27/2003US20030040157 Vertical transistor with horizontal gate layers
02/27/2003US20030040140 Semiconductor memory device and method of manufacturing semiconductor device with chip on chip structure
02/27/2003US20030039924 Method for making programmable resistance memory element using silylated photoresist
02/27/2003US20030039153 EEPROM array and method for operation thereof
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