Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
09/2003
09/11/2003US20030169625 Programmable conductor random access memory and method for sensing same
09/11/2003US20030169624 Microcomputer with nonvolatile memory protected against false erasing or writing
09/11/2003US20030169623 System for setting memory voltage threshold
09/11/2003US20030169622 Semiconductor memory device
09/11/2003US20030169621 Nonvolatile multilevel cell memory
09/10/2003EP1343172A2 Memory system
09/10/2003EP1342244A1 Page-erasable flash memory
09/10/2003EP1264315B1 Reference cell trimming verification circuit
09/10/2003EP1254459B1 Voltage boost level clamping circuit for a flash memory
09/10/2003EP1084495A4 Eeprom
09/10/2003EP0830686B1 Negative voltage switching circuit
09/10/2003CN1441480A Programming and erasing method for non-volatile memory unit
09/10/2003CN1441440A Regulating system and method for obtaining uniform wear in flash storage device
09/10/2003CN1441439A Non-volatile storage, IC card and data processing system
09/10/2003CN1121037C Recording and reproducing device
09/09/2003US6618789 Security memory card compatible with secure and non-secure data processing systems
09/09/2003US6618315 Non-volatile, electrically alterable semiconductor memory
09/09/2003US6618312 Method and device for providing a multiple phase power on reset
09/09/2003US6618298 Semiconductor memory device
09/09/2003US6618297 Method of establishing reference levels for sensing multilevel memory cell states
09/09/2003US6618294 Non-volatile memory with block erase
09/09/2003US6618293 Non-volatile memory with block erase
09/09/2003US6618292 Semiconductor memory device and method of operating the same
09/09/2003US6618291 Write state machine architecture for flash memory internal instructions
09/09/2003US6618290 Method of programming a non-volatile memory cell using a baking process
09/09/2003US6618289 High voltage bit/column latch for Vcc operation
09/09/2003US6618288 Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
09/09/2003US6618287 Global/local memory decode with independent program and read paths and shared local decode
09/09/2003US6618286 Non-volatile semiconductor memory device with a memory array preventing generation of a through current path
09/09/2003US6618117 Image sensing apparatus including a microcontroller
09/09/2003US6617907 Voltage translator
09/09/2003US6617885 Sense amplifiers having gain control circuits therein that inhibit signal oscillations
09/09/2003US6617632 Semiconductor device and a method of manufacturing the same
09/04/2003WO2003073512A1 Single level metal memory cell using chalcogenide cladding
09/04/2003WO2003073511A1 Dual trench isolation for a phase-change memory cell and method of making same
09/04/2003WO2003073434A1 Non-volatile memory test structure and method
09/04/2003WO2003073433A1 Nonvolatile semiconductor memory device
09/04/2003WO2003073432A1 Nonvolatile semiconductor storage unit
09/04/2003WO2003073431A1 Nonvolatile semiconductor memory device
09/04/2003WO2003073430A1 Nonvolatile semiconductor storage device
09/04/2003WO2003073429A1 Nonvolatile semiconductor storage device
09/04/2003WO2003073290A1 Pipelined parallel programming operation in a non-volatile memory system
09/04/2003WO2003073259A1 Direct memory swapping between nand flash and sram with error correction coding
09/04/2003WO2003071853A2 Removable memory media with integral indicator light
09/04/2003US20030167372 Semiconductor memory device with a flexible redundancy scheme
09/04/2003US20030165076 Method of writing data to non-volatile memory
09/04/2003US20030165075 Method of adjusting program voltage in non-volatile memories, and process for fabricating a non-volatile memory device
09/04/2003US20030164517 Nonvolatile semiconductor memory device
09/04/2003US20030164515 Carbon-containing interfacial layer for phase-change memory
09/04/2003US20030164510 Redundancy architecture for repairing semiconductor memories
09/04/2003CA2476913A1 Direct memory swapping between nand flash and sram with error correction coding
09/03/2003EP1341185A1 Operating techniques for reducing the program and read disturbs of a non-volatile memory
09/03/2003EP1340150A2 Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory
09/03/2003EP1256116B1 Flash memory architecture employing three layer metal interconnect
09/03/2003CN1440570A Automated determination and display of physical location of failed cell in array of memory cells
09/03/2003CN1440555A Block level read while write method and apparatus
09/03/2003CN1440038A Nonvolatile memory for catching charges in isolative films
09/03/2003CN1120499C Semiconductor memory device which can be set one from multiple threshold value
09/02/2003US6615355 Method and apparatus for protecting flash memory
09/02/2003US6615309 Semiconductor memory device
09/02/2003US6615307 Flash with consistent latency for read operations
09/02/2003US6614715 Integrated circuit memory device having interleaved read and program capabilities and methods of operating same
09/02/2003US6614711 Row decoder scheme for flash memory devices
09/02/2003US6614709 Method and apparatus for processing commands in a queue coupled to a system or memory
09/02/2003US6614708 Non-volatile memory device with built-in laser indicator
09/02/2003US6614699 Booster circuit for raising voltage by sequentially transferring charges from input terminals of booster units to output terminals thereof in response to clock signals having different phases
09/02/2003US6614695 Non-volatile memory with block erase
09/02/2003US6614694 Erase scheme for non-volatile memory
09/02/2003US6614693 Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM
09/02/2003US6614692 EEPROM array and method for operation thereof
09/02/2003US6614691 Flash memory having separate read and write paths
09/02/2003US6614690 Non-volatile memory having a control mini-array
09/02/2003US6614689 Non-volatile memory having a control mini-array
09/02/2003US6614688 Method of programming non-volatile semiconductor memory device
09/02/2003US6614687 Current source component with process tracking characteristics for compact programmed Vt distribution of flash EPROM
09/02/2003US6614686 Nonvolatile memory circuit for recording multiple bit information
09/02/2003US6614684 Semiconductor integrated circuit and nonvolatile memory element
09/02/2003US6614683 Ascending staircase read technique for a multilevel cell NAND flash memory device
09/02/2003US6614292 Boosting circuit of semiconductor memory device
09/02/2003US6614210 Variable voltage source for a flash device operating from a power-supply-in-package (PSIP)
09/02/2003US6614071 Non-volatile semiconductor memory device
09/02/2003US6614070 Semiconductor non-volatile memory device having a NAND cell structure
08/2003
08/28/2003WO2003071553A1 Semiconductor integrated circuit
08/28/2003WO2003071551A1 Using multiple status bits per cell for handling power failures during write operations
08/28/2003WO2003071549A1 Programmable conductor random access memory and method for sensing same
08/28/2003WO2003044803A3 Sense amplifier for multilevel non-volatile integrated memory devices
08/28/2003US20030163656 Memory configuration for a wireless communications device
08/28/2003US20030163633 System and method for achieving uniform wear levels in a flash memory device
08/28/2003US20030163629 Pipelined parallel programming operation in a non-volatile memory system
08/28/2003US20030161205 Non-volatile memory with test rows for disturb detection
08/28/2003US20030161203 Multi-level semiconductor memory architecture and method of forming the same
08/28/2003US20030161199 Removable memory media with integral indicator light
08/28/2003US20030161192 Nonvolatile semiconductor memory device and methods for operating and producing the same
08/28/2003US20030161191 Nonvolatile memory, IC card and data processing system
08/28/2003US20030161188 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell
08/28/2003US20030161187 Method for erasing a flash EEPROM
08/28/2003US20030161186 Monitoring entropic conditions of a flash memory device as an indicator for invoking erasure operations
08/28/2003US20030161185 Method and system for efficiently reading and programming of dual cell memory elements
08/28/2003US20030161184 Novel highly-integrated flash memory and mask ROM array architecture
08/28/2003US20030161183 Digital multilevel non-volatile memory system