Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
02/2005
02/22/2005US6859389 Phase change-type memory element and process for producing the same
02/22/2005US6859382 Memory array of a non-volatile ram
02/22/2005US6859381 Semiconductor device and method for driving the same
02/22/2005US6859379 Semiconductor memory device and memory system
02/22/2005US6858482 Method of manufacture of programmable switching circuits and memory cells employing a glass layer
02/22/2005US6858448 Method for evaluating and manufacturing a semiconductor device
02/22/2005US6858277 Information recording medium and method for manufacturing the same
02/17/2005WO2005015566A1 Detecting over programmed memory
02/17/2005WO2004070987A3 Analog floating gate voltage sense during dual conduction programming
02/17/2005US20050039174 Apparatus and method for co-simulating processors and DUT modules
02/17/2005US20050038956 Method and an apparatus of flash cards access
02/17/2005US20050038953 Method of programming/reading multi-level flash memory using sensing circuit
02/17/2005US20050037573 Flash memories and methods of fabricating the same
02/17/2005US20050037571 Fowler-Nordheim block alterable EEPROM memory cell
02/17/2005US20050036453 Controlling method and device for data transmission
02/17/2005US20050036397 Detecting device and method for determining type and insertion of flash memory card
02/17/2005US20050036395 Non-volatile semiconductor memory device and electric device with the same
02/17/2005US20050036393 Scalable flash EEPROM memory cell with notched floating gate and graded source region, and method of manufacturing the same
02/17/2005US20050036391 Nonvolatile semiconductor memory apparatus and the operation method
02/17/2005US20050036390 Non-volatile memory and non-volatile memory data rewriting method
02/17/2005US20050036389 Electronic memory having impedance-matched sensing
02/17/2005US20050036387 Method of using flash memory for storing metering data
02/17/2005US20050036383 EEPROM memory matrix and method for safeguarding an EEPROM memory matrix
02/17/2005US20050036370 Write once read only memory with large work function floating gates
02/17/2005US20050036369 Temperature compensated bit-line precharge
02/17/2005US20050036366 Semiconductor nonvolatile memory, method of recording data in the semiconductor nonvolatile memory and method of reading data from the semiconductor nonvolatile memory
02/17/2005US20050036364 Method and driver for programming phase change memory cell
02/17/2005US20050036356 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal
02/17/2005US20050036353 Nonvolatile semiconductor memory device
02/17/2005US20050036348 Peripheral apparatus, firmware updating method thereof, and program
02/17/2005US20050036346 Electronic memory, such as flash EPROM, with bitwise-adjusted writing current or/and voltage
02/17/2005US20050035806 Circuit and method to protect EEPROM data during ESD events
02/17/2005US20050035429 Programmable eraseless memory
02/17/2005US20050035393 Split-gate non-volatile memory
02/17/2005US20050035373 Storage device
02/17/2005DE202004018337U1 Memory device for electronic data e.g. USB memory stick, has composite metal housing
02/17/2005DE102004011419A1 Speicherzellenfolgen in einem Widerstands-Kreuzungspunkt-Speicherzellarray Memory cell strings in a resistive cross-point memory cell array
02/16/2005EP1507209A1 Data storage device, method for updating management information in data storage device, and computer program
02/16/2005EP1506581A2 Superconducting quantum bit device with josephson junctions
02/16/2005EP1506552A1 Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
02/16/2005EP1058930A4 A memory supporting multiple address protocols
02/16/2005CN1582498A Non-volatile memory, method of manufacture, and method of programming
02/16/2005CN1581357A Storage card and data processing system
02/16/2005CN1581102A Circuit and method for implementing correction operation to only read memory in inlaid program
02/16/2005CN1581066A Controller and method for writing data
02/16/2005CN1189943C Monoelectron memory device composed of quantum points and making method thereof
02/16/2005CN1189823C Data processing device, data processing method, terminal, transmission method for data processing device
02/15/2005US6857099 Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
02/15/2005US6857041 Method and apparatus providing an interface to allow physical memory to be initialized using firmware/hardware methods
02/15/2005US6856571 Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure
02/15/2005US6856568 Refresh operations that change address mappings in a non-volatile memory
02/15/2005US6856556 Storage subsystem with embedded circuit for protecting against anomalies in power signal from host
02/15/2005US6856553 Flash memory with shortened erasing operation time
02/15/2005US6856552 Semiconductor memory and method of driving the same
02/15/2005US6856551 System and method for programming cells in non-volatile integrated memory devices
02/15/2005US6856550 Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data
02/15/2005US6856549 Non-volatile semiconductor memory device attaining high data transfer rate
02/15/2005US6856548 Nonvolatile semiconductor memory
02/15/2005US6856547 Circuit for biasing an input node of a sense amplifier with a pre-charge stage
02/15/2005US6856546 Multi-state memory
02/15/2005US6856545 Fast program to program verify method
02/15/2005US6856544 Semiconductor memory device in which source line potential is controlled in accordance with data programming mode
02/15/2005US6856543 Semiconductor integrated circuit device with erasable and programmable fuse memory
02/15/2005US6856541 Segmented metal bitlines
02/15/2005US6855608 Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistance
02/10/2005WO2005013283A1 Detecting over programmed memory cells after programming of adjacent memory cells
02/10/2005WO2005013281A2 Nonvolatile memory and method of making same
02/10/2005WO2004097837A3 Method of dual cell memory device operation for improved end-of-life read margin
02/10/2005US20050034034 Control device with rewriteable control data
02/10/2005US20050033937 Non-volatile data storage system and data storaging method
02/10/2005US20050033904 Multiple erase block tagging in a flash memory device
02/10/2005US20050033541 Memory cell signal window testing apparatus
02/10/2005US20050032313 Vertical gain cell
02/10/2005US20050030828 Nonvolatile semiconductor memory device and data write method thereof
02/10/2005US20050030827 PMOS memory cell
02/10/2005US20050030826 Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
02/10/2005US20050030814 Data read circuit for use in a semiconductor memory and a method thereof
02/10/2005US20050030812 Semiconductor memory device
02/10/2005US20050030811 High speed low voltage driver
02/10/2005US20050030809 Sensing circuit for a semiconductor memory
02/10/2005US20050030800 Multilayered phase change memory
02/10/2005US20050030796 Circuit and/or method for implementing a patch mechanism for embedded program ROM
02/10/2005US20050030794 Method for erasing an NROM cell
02/10/2005US20050030793 Method for operating a nor-array memory module composed of p-type memory cells
02/10/2005US20050030792 Method for programming and erasing an nrom cell
02/10/2005US20050030791 Method writing data to a large block of a flash memory cell
02/10/2005US20050030790 Nonvolatile semiconductor memory with a programming operation and the method thereof
02/10/2005US20050030789 Method for operating a nand-array memory module composed of p-type memory cells
02/10/2005US20050030788 Analog phase change memory
02/10/2005US20050030787 Read bias scheme for phase change memories
02/10/2005US20050030784 Optically accessible phase change memory
02/10/2005US20050030086 Negative voltage generator for a semiconductor memory device
02/10/2005US20050029681 Semiconductor memory device and method for producing the same
02/10/2005US20050029653 IC-chip having a protective structure
02/10/2005US20050029578 Non-volatile semiconductor memory device, method for manufacturing same and method for controlling same
02/10/2005US20050029577 Semiconductor memory device
02/10/2005US20050029505 Phase change access device for memories
02/10/2005US20050029051 Non-volatile semiconductor memory device
02/10/2005DE19882265B4 Flash-Speicher-VDS-Kompensationstechniken zum Verringern von Programmierschwankungen Flash memory VDS-compensation techniques for reducing programming fluctuations
02/10/2005DE102004034758A1 Mehrblock-Speicherbaustein und zugehöriges Betriebsverfahren Multi-block memory device and operating method thereof