Patents for G01L 21 - Vacuum gauges (1,613)
03/2007
03/14/2007CN1928372A Shaft fastening device
03/13/2007US7189332 Apparatus and method for detecting an endpoint in a vapor phase etch
03/08/2007US20070054422 Test structure for electrically verifying the depths of trench-etching in an soi wafer, and associated working methods
03/07/2007CN1926421A Microfabricated hot wire vacuum sensor
03/06/2007US7187523 Method of marking sintered body and method for manufacturing magnetic head wafer
03/01/2007WO2007024614A2 Selection of wavelenghts for end point in a time division multiplexed process
03/01/2007US20070045228 Etching depth measuring device, etching apparatus, and etching depth measuring method
02/2007
02/22/2007WO2006068732A3 Hands-free push-to-talk radio
02/22/2007WO2006010884A8 Pirani pressure gauge
02/22/2007US20070042603 Method for etching having a controlled distribution of process results
02/21/2007CN1918461A Method and device for speech enhancement in the presence of background noise
02/15/2007WO2007017625A1 Thermal conductivity gauge
02/13/2007US7175777 Method of forming a sub-micron tip feature
02/08/2007US20070029282 Method of processing a workpiece by controlling a set of plasma parameters through a set of chamber parameters using surfaces of constant value
02/06/2007US7173430 Cold-cathode ionization manometer having a longer service life due to two separate cathodes
02/06/2007US7172839 Preventing surface damage; coarse focused ion etching followed by gas assisted electron beam removal of thin film contaminated with gallium
02/01/2007WO2006036821A3 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
02/01/2007US20070023393 polysilicon layer has at least one doped region, is provided, substrate is placed in a processing chamber, an etchant gas is provided into the processing chamber comprises N2, SF6, and at least one of CHF3 and CH2F2. The etching gas is transformed to a plasma to etch the polysilicone
01/2007
01/25/2007US20070017897 Multi-frequency plasma enhanced process chamber having a toroidal plasma source
01/25/2007US20070017896 Method for controlling a process for fabricating integrated devices
01/25/2007US20070017244 Compressor head, internal discriminator, external discriminator, manifold design for refrigerant recovery apparatus and vacuum sensor
01/24/2007CN2861992Y Micro-vacuometer built-in infrared detector dewar assembly
01/23/2007US7165458 Vacuum gauge
01/18/2007US20070012660 Cluster tool with integrated metrology chamber for transparent substrates
01/17/2007EP1744139A1 Encoding device, decoding device, and method thereof
01/11/2007US20070007244 Detection of loss of plasma confinement
01/11/2007DE102005029114A1 Measuring errors reduction method e.g. for combination pressure sensors, involves having several sensors, which supply time-discrete, standardized, optionally linearized signal provided around ambient temperature influences
01/09/2007US7159412 Compressor head, internal discriminator, external discriminator, manifold design for refrigeration recovery apparatus
01/04/2007DE202006014363U1 Non-contact verification of adequate vacuum in insulation panels, employs radio frequency transponder and pressure switch in panel, with external detection instrument
12/2006
12/28/2006US20060289384 Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal
12/28/2006US20060289381 Including selectively etching an exposed portion of the top magnetic layer, and underlying portions of the tunnel barrier and the pinned bottom magnetic film layer using an etchant solution containing an arylsulfonic acid and an aliphatic or alicyclic amine.
12/21/2006WO2006122121A3 Metastable cid
12/21/2006US20060287753 Process change detection through the use of evolutionary algorithms
12/21/2006US20060283835 Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power
12/21/2006US20060283549 Plasma processing apparatus and method capable of adjusting temperature within sample table
12/19/2006US7151802 High frequency content recovering method and device for over-sampled synthesized wideband signal
12/19/2006US7150622 Systems for magnification and distortion correction for imprint lithography processes
12/14/2006US20060278610 Method of controlling chamber parameters of a plasma reactor in accordance with desired values of plural plasma parameters, by translating desired values for the plural plasma parameters to control values for each of the chamber parameters
12/14/2006US20060278609 Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants
12/14/2006US20060278608 Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current
12/14/2006DE102005020960B3 Gas pressure measuring method e. g. for hydrogen aggregates for motor vehicles, involves having temperature measuring instrument for measuring gas temperature and mechanism for determination of temperature of heating element
12/07/2006WO2006130221A1 Systems, methods, and apparatus for highband excitation generation
12/07/2006US20060277036 Method and device for adaptive bandwidth pitch search in coding wideband signals
12/06/2006EP1728059A1 Microfabricated hot wire vacuum sensor
11/2006
11/30/2006US20060266735 Plasma generation and control using dual frequency RF signals
11/29/2006EP1725847A2 An ionization gauge
11/29/2006CN1871103A Systems for magnification and distortion correction for imprint lithography processes
11/29/2006CN1869624A Thermal cup vacuum detection instrument
11/28/2006US7141983 Cold cathode device and vacuum gauge using same
11/23/2006US20060261036 Method for patterning on a wafer having at least one substrate for the realization of an integrated circuit
11/22/2006CN1865883A Bypass type ultrahigh and extreme-high vacuum gauge calibrating device and method thereof
11/21/2006US7139709 Middleware layer between speech related applications and engines
11/16/2006WO2006121563A2 Method and system for line-dimension control of an etch process
11/16/2006WO2006121173A1 Ionization vacuum gauge
11/16/2006US20060255010 Method and system for line-dimension control of an etch process
11/14/2006US7135123 Method and system for integrated circuit backside navigation
11/09/2006US20060249479 Method for inspection, proces for making analytic piece, method for analysis, analyzer, process for producing soi wafer, and soi wafer
10/2006
10/25/2006CN1851853A Device and method for reducing thin-film type capacitance vacuum gauge zero-point drift
10/19/2006US20060231526 System and method for determining the state of a film in a plasma reactor using an electrical property
10/17/2006US7122814 Arrangement for the stabilization of the radiation emission of a plasma
10/12/2006US20060226117 Phase change based heating element system and method
10/05/2006US20060223334 System for controlling a plurality of lot processes, method for controlling a plurality of lot processes and method for manufacturing a semiconductor device
10/05/2006US20060219658 Method of measuring semiconductor wafers with an oxide enhanced probe
10/03/2006US7115211 Endpoint detection using laser interferometry
10/03/2006US7115210 Measurement to determine plasma leakage
09/2006
09/28/2006WO2006101897A2 Method and apparatus for monitoring plasma conditions in an etching plasma processing facility
09/28/2006WO2005091331A3 An ionization gauge
09/28/2006US20060213864 Etching method and apparatus
09/21/2006US20060211253 Method and apparatus for monitoring plasma conditions in an etching plasma processing facility
09/14/2006WO2006094687A1 Vacuum measuring gauge
09/14/2006US20060202701 Vacuum measuring gauge
09/14/2006DE102005010716A1 Kaltkathoden-Drucksensor Cold cathode pressure sensor
09/13/2006EP1700093A2 Cold cathode ion gauge
09/12/2006US7105436 Method for in-line monitoring of via/contact holes etch process based on test structures in semiconductor wafer manufacturing
09/12/2006US7105100 System and method for gas distribution in a dry etch process
09/07/2006US20060197537 Ionization gauge
09/07/2006US20060196846 Plasma processing method and apparatus, and method for measuring a density of fluorine in plasma
09/07/2006DE102005008959A1 Pressure sensor for vacuum applications, has similar diaphragms connected together with electromechanical transducer converting deflection to electrical signal
09/06/2006EP1698878A1 Electrode configuration and pressure measuring apparatus
09/05/2006US7101805 Envelope follower end point detection in time division multiplexed processes
08/2006
08/31/2006WO2006039421A8 Pressure transducer with improved process adapter
08/31/2006US20060191866 Microfeature workpiece processing system for, e.g., semiconductor wafer analysis
08/31/2006US20060191349 Pressure sensor with expanding member
08/29/2006US7098667 Cold cathode ion gauge
08/24/2006WO2006088738A2 Application of in-situ plasma measurements to performance and control of a plasma processing system
08/23/2006EP1552265B1 Apparatus and methods for heat loss pressure measurement
08/17/2006WO2006012022A3 Methods and apparatus for determining endpoint in a plasma processing system
08/17/2006US20060180570 Application of in-situ plasma measurements to performance and control of a plasma processing system
08/09/2006CN1815157A Heat-conductive assembly containing detecting element and detecting method
08/08/2006US7087451 Microfabricated hot wire vacuum sensor
08/03/2006US20060169670 Method for etching a sample and etching system
07/2006
07/27/2006WO2006078851A2 End point detection method for plasma etching of semiconductor wafers with low exposed area
07/26/2006CN1809874A Multi-channel speech processor with increased channel density
07/25/2006US7081209 Solder mask removal method
07/20/2006US20060157449 Plasma processing apparatus and a plasma processing method
07/20/2006US20060157446 End point detection method for plasma etching of semiconductor wafers with low exposed area
07/20/2006US20060157445 Gas setting method, gas setting apparatus, etching apparatus and substrate processing system
07/20/2006DE102004055230B3 Verfahren zur Spracherkennung aus einem vorgebbaren Vokabular Method for speech recognition of a vocabulary predeterminable
07/13/2006US20060151430 Method and system for processing multi-layer films
07/13/2006US20060151429 Plasma processing method
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