Patents for C30B 9 - Single-crystal growth from melt solutions using molten solvents (1,363)
08/2006
08/09/2006CN1814863A Method for flux growth of Na3La9B8027
08/03/2006US20060169197 Method for producing group III nitride single crystal and apparatus used therefor
07/2006
07/25/2006US7081162 Method of manufacturing bulk single crystal of gallium nitride
07/20/2006US20060159863 A carrier transporting film enhanced by a uniform molecular alignment by the phase transition from the smectic liquid crystal phase to the solid crystal, the liquid crystal being a laterally symmetrical mesogen unit including an aromatic ring; charge transport/generating compounds; high seed/density
07/18/2006US7078731 Gallium nitride crystals and wafers and method of making
07/06/2006WO2006070749A1 METHOD FOR PRODUCING SILICON CARBIDE (SiC) SINGLE CRYSTAL AND SILICON CARBIDE (SiC) SINGLE CRYSTAL OBTAINED BY SUCH METHOD
07/05/2006CN1799150A Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
07/05/2006CN1798881A Method for producing group iii nitride single crystal and apparatus used therefor
07/05/2006CN1263206C 氮化物半导体激光元件及其制造方法 The nitride semiconductor laser device and manufacturing method
06/2006
06/27/2006US7067006 OH and H resistant silicon material
06/22/2006US20060130739 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
06/21/2006CN1260862C Self-frequency-doubled blue-violet coloured laser source
06/21/2006CN1260409C Method for obtaining bulk monocrystalline gallium nitride
06/20/2006US7063741 High pressure high temperature growth of crystalline group III metal nitrides
06/15/2006US20060124050 Method of manufacturing doped superconducting materials
06/14/2006CN1259463C Nd doped scandium-strontium-yttrium borate laser crystal and its preparing method and use
06/08/2006US20060120931 Process for obtaining bulk-crystalline gallium-containing nitride
06/08/2006US20060118799 Resonant cavity light emitting devices and associated method
06/06/2006US7057211 Nitride semiconductor laser device and manufacturing method thereof
06/01/2006WO2006057463A1 Nitride single crystal seeded growth in supercritical ammonia with alkali metal ion
05/2006
05/30/2006US7052594 Elastic sheet immobilized on substrate; electrode contactors on elastic sheet; applying electric potentials; microfluids
05/17/2006CN1772972A Process for growing gallium nitride single crystal utilizing new flux molten-salt growth method
05/10/2006EP1634980A9 Method for producing group iii nitride single crystal and apparatus used therefor
05/03/2006CN1254569C Growth method of RE3+: KGd (WO4)2 laser crystal
05/03/2006CN1254568C Growth of LiB3O5 nonlinear optical crystal
05/03/2006CN1254566C Fused salt pulling method for growing LBO crystal
05/03/2006CN1254564C Growth of laser crystal Yb3+; Nd3+: REA3 (BO3)4
04/2006
04/26/2006CN1763264A Flux method for growth of gallium phosphate crystal
04/20/2006WO2006022302A3 Process for producing aluminum nitride crystal and aluminum nitride crystal obtained thereby
04/20/2006DE102004048453A1 Verfahren zur Erhöhung des Umsatzes von Gruppe-III-Metall zu Gruppe-III-Nitrid in einer Gruppe-III-haltigen Metallschmelze A method for increasing the conversion of group III metal to group III nitride in a group-III-containing molten metal
04/13/2006WO2006037310A1 Method for the production of group iii nitride bulk crystals or crystal layers from fused metals
04/13/2006US20060076324 Melting and vaporizing apparatus and method
03/2006
03/16/2006WO2005099934A3 Method and arrangement for crystal growth from fused metals or fused solutions
03/16/2006US20060054076 Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
03/15/2006EP1634980A1 Method for producing group iii nitride single crystal and apparatus used therefor
03/15/2006CN1748290A Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
03/09/2006US20060051942 Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby
03/09/2006US20060048699 Apparatus for producing single crystal and quasi-single crystal, and associated method
03/08/2006EP1631704A1 Method of manufacturing doped superconducting materials
03/08/2006EP1535309A4 Radiation detector
03/07/2006US7009215 Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
03/01/2006CN1740405A Silver nanometer wire synthesizing process
02/2006
02/23/2006US20060037531 Furnace purification and metal fluoride crystals grown in a purified furnace
02/23/2006US20060037530 Process for obtaining bulk mono-crystalline gallium-containing nitride
02/23/2006US20060037529 Single crystal and quasi-single crystal, composition, apparatus, and associated method
02/22/2006EP1627940A1 Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element
02/22/2006CN1737215A Method for growing lead lanthanum zirconate stannate titanate single-crystal utilizing composite fluxing agent
02/21/2006US7001457 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
02/16/2006US20060032431 High pressure crystal growth apparatuses and associated methods
02/16/2006US20060032428 Process for obtaining of bulk monocrystalline gallium-containing nitride
02/14/2006US6997987 Optical lithography fluoride crystal annealing furnace
02/01/2006CN1727527A Boron aluminate, non-linear optic crystal of boron aluminate, growth method and usage
01/2006
01/19/2006US20060011603 Melting and vaporizing apparatus and method
01/18/2006CN1723301A Process for obtaining of bulk monocrystalline gallium-containing nitride
01/12/2006WO2006005018A2 Process for producing a crystalline silicon ingot
01/05/2006US20060000409 Process for producing a crystalline silicon ingot
01/04/2006EP1612300A1 Nitrode single crystal and producing method thereof
01/03/2006US6982104 Single-crystalline film and process for production thereof
01/03/2006US6982001 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
12/2005
12/22/2005WO2005121418A1 Iii group nitride crystal and method for preparation thereof, and iii group nitride crystal substrate and semiconductor device
12/22/2005WO2005121415A1 Bulk mono-crystalline gallium-containing nitride and its application
12/08/2005US20050268841 Radiation detector
12/01/2005US20050263064 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
11/2005
11/30/2005CN1229527C Preparation method of barium sodium niobate cylindrical monocrystal particle
11/24/2005WO2005111278A1 Group iii nitride semiconductor crystal, method for producing same, and group iii nitride semiconductor device
11/24/2005WO2005068680A3 Melting and vaporizing apparatus and method
11/16/2005EP1594603A1 High temperature high pressure capsule for processing materials in supercritical fluids
11/10/2005US20050249255 Nitride semiconductor laser device and a method for improving its performance
11/10/2005US20050247918 Borate crystals for optical frequency conversion
11/10/2005DE102004018664A1 Verfahren und Anordnung zur Kristallzüchtung aus metallischen Schmelzen oder Schmelzlösungen Method and system for crystal growth from fused metals or fused solutions
11/03/2005WO2005103341A1 Apparatus for production of crystal of group iii element nitride and process for producing crystal of group iii element nitride
11/02/2005EP1590509A1 Process for obtaining of bulk monocrystallline gallium-containing nitride
10/2005
10/27/2005WO2005100647A1 Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device
10/27/2005WO2005099934A2 Method and arrangement for crystal growth from fused metals or fused solutions
10/19/2005CN1683606A Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
10/13/2005WO2005095682A1 Gallium nitride single crystal growing method and gallium nitride single crystal
10/13/2005WO2005095681A1 Method for producing iii group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
10/13/2005US20050223971 Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
10/12/2005CN1681974A Improvemrnt of process for obtaining of bulk monocrystallline gallium-containing nitride
09/2005
09/28/2005EP1579486A1 Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
09/27/2005US6949140 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
09/22/2005WO2005087984A1 Method for growing large-size perfect lithium triborate crystals
09/22/2005US20050205002 Casting method
09/21/2005EP1577496A2 Casting method for turbine blade
09/21/2005CN1671892A Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby
09/21/2005CN1219917C Process for preparing laser rod with undoped ends
09/15/2005WO2005085503A1 Method for producing corundam crystal
09/14/2005CN1668370A High temperature high pressure capsule for processing material in supercritical fluid
09/08/2005DE102004062914A1 Fotovoltaisches Umwandlungsbauteil und Verfahren zum Herstellen des Bauteils A photovoltaic conversion element and method for manufacturing the component
09/01/2005US20050188917 Method for manufacturing crystal plate
08/2005
08/31/2005CN1663088A Nitride semiconductor laser device and a method for improving its performance
08/25/2005WO2005078170A1 Artificial corundum crystal
08/25/2005WO2005078169A1 Corundum crystal formed item
08/17/2005CN1656029A Oh and h resistant silicon material
07/2005
07/28/2005WO2005068680A2 Melting and vaporizing apparatus and method
07/28/2005US20050160970 Photovoltaic conversion device and method of manufacturing the device
07/27/2005EP1557870A2 Group III nitride crystal substrate, method of its manufacture, and group-III nitride semiconductor device
07/26/2005US6921498 Nonlinear optical crystals of compound Na3La9B8O27 and producing method and uses thereof
07/20/2005CN1643187A High pressure high temperature growth of crystalline group III metal nitrides
07/14/2005WO2005064046A1 Method for producing a monocrystalline cu(in,ga)se2 powder, and monograin membrane solar cell containing said powder
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