| Patents for C30B 9 - Single-crystal growth from melt solutions using molten solvents (1,363) |
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| 12/30/2010 | US20100326350 Magnetic garnet single crystal and optical element using same as well as method of producing single crystal |
| 12/29/2010 | EP2267197A1 Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
| 12/29/2010 | EP2267193A1 Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same |
| 12/29/2010 | CN101928989A Neodymium-doped lithium barium ytterbium tungstate laser crystal and preparation method and application thereof |
| 12/29/2010 | CN101928988A Erbium-doped lithium barium gadolinium tungstate laser crystal as well as preparation method and application thereof |
| 12/16/2010 | WO2010143748A1 Method for growing single crystal of group iii metal nitride and reaction vessel for use in same |
| 12/15/2010 | CN101175875B Method and apparatus for producing group III element nitride crystal, and group iii element nitride crystal |
| 12/14/2010 | US7850777 Method of preparing semiconductor nanocrystal compositions |
| 12/02/2010 | US20100301358 Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor |
| 11/18/2010 | US20100288189 Floating Semiconductor Foils |
| 11/18/2010 | US20100288188 Method for growing silicon carbide single crystal |
| 10/28/2010 | DE112008003497T5 Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls A method for growing a silicon carbide single crystal |
| 10/12/2010 | US7811380 Process for obtaining bulk mono-crystalline gallium-containing nitride |
| 10/07/2010 | DE102009016134A1 Producing volume single crystal, comprises disposing seed crystal in crystal growth region of growth crucible with initial growth surface and center central longitudinal axis, and growing the single crystal by deposition onto seed crystal |
| 10/06/2010 | CN101855391A Method for processing silicon powder to obtain silicon crystals |
| 09/29/2010 | CN101848864A Method of converting alkaline-earth metal chlorides to tungstates and molybdates and applications thereof |
| 09/21/2010 | US7799158 Method for producing crystallographically-oriented ceramic |
| 09/16/2010 | WO2010103387A1 Method of producing sic single crystal |
| 09/16/2010 | US20100233064 Method for purifying silicon |
| 09/16/2010 | US20100229787 Crystal Manufacturing Apparatus |
| 09/16/2010 | DE102006035377B4 Verfahren zur Herstellung eines Halbleiterkristalls A process for producing a semiconductor crystal |
| 09/15/2010 | CN1973063B Monocrystals of nitride containing gallium and its application |
| 09/15/2010 | CN101831706A Growth method of low ultraviolet absorption YA13(BO3)4 crystal |
| 09/15/2010 | CN101831705A Method for growing YAl3(BO3)4 crystals by tungstate cosolvent system |
| 09/14/2010 | US7794539 Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby |
| 09/02/2010 | WO2010098676A1 Method for the production of solar grade silicon |
| 08/19/2010 | WO2010092736A1 Method for growing group 3b nitride crystal, and group 3b nitride crystal |
| 08/19/2010 | US20100207029 Single crystal scintillator material and method for producing the same |
| 08/11/2010 | CN101802271A Use of acid washing to provide purified silicon crystals |
| 08/11/2010 | CN101799609A BaMgBO3F non-linear optical crystal, preparation method and applications thereof |
| 08/11/2010 | CN101798707A BaMgBO3F non-linear optical crystal, preparation method and applications thereof |
| 08/04/2010 | CN101796227A Process for growing single-crystal silicon carbide |
| 07/29/2010 | WO2010084676A1 Apparatus for producing group 3b nitride crystal plate |
| 07/29/2010 | WO2010084675A1 Group 3b nitride crystal plate |
| 07/29/2010 | WO2009149299A8 Methods for producing improved crystallinity group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
| 07/28/2010 | CN101363131B Top seed solution growth reentrance technology in fluxing agent growth method |
| 07/15/2010 | WO2010079814A1 Nitride crystal manufacturing method, nitride crystal, and device for manufacturing same |
| 07/15/2010 | WO2010079655A1 Reaction vessel for growing single crystal, and method for growing single crystal |
| 07/14/2010 | CN101775652A Preparation and application of K3Al2(PO4)3 non-linear optical crystal |
| 07/14/2010 | CN101775646A Na3M2(BO3)3 nonlinear optical crystal as well as preparation method and application |
| 07/13/2010 | US7754012 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride |
| 07/07/2010 | CN101767778A BaCa4Se7 compound, BaCa4Se7 nonlinear optical crystal, preparation method and application |
| 07/06/2010 | US7750355 Light emitting element structure using nitride bulk single crystal layer |
| 07/06/2010 | US7749324 Casting method of silicon ingot and cutting method of the same |
| 06/30/2010 | CN101760772A Reaction unit for ammonia thermal growth of nitride |
| 06/29/2010 | US7744697 Bulk monocrystalline gallium nitride |
| 06/23/2010 | CN101748475A Special processing method for growing large-size high-quality LBO crystals |
| 06/17/2010 | DE19963941B4 Borat-Einkristall, Verfahren zum Züchten desselben und Verwendung desselben Borate single crystal of the same method of growing and using the same |
| 06/16/2010 | CN1902335B Melting and vaporizing apparatus and method |
| 05/26/2010 | CN1942611B Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device |
| 05/19/2010 | EP2185476A2 Method of converting alkaline-earth metal chlorides to tungstates and molybdates and applications thereof |
| 05/19/2010 | CN1954101B Method and apparatus for producing group III nitride crystal |
| 04/29/2010 | US20100104495 Method for producing nitride semiconductor, crystal growth rate increasing agent, single crystal nitride, wafer and device |
| 04/22/2010 | US20100098613 Preparation of rare-earth halide blocks |
| 04/14/2010 | EP2175008A1 Single crystal scintillator material and method for producing the same |
| 04/07/2010 | EP2171133A1 Use of acid washing to provide purified silicon crystals |
| 03/25/2010 | WO2010006623A3 Semiconductor material and its application as an absorber material for solar cells |
| 03/24/2010 | CN101680113A Method for producing SiC single crystal |
| 03/24/2010 | CN101676449A Crystal growth method of rare-earth sulfide with non-centrosymmetric structure |
| 03/24/2010 | CN101676448A Erbium-doped yttrium barium lithium molybdate laser crystal and preparation method and application thereof |
| 03/24/2010 | CN101676447A Erbium-doped gadolinium barium lithium molybdate laser crystal and preparation method and application thereof |
| 03/24/2010 | CN101676446A Neodymium-doped lanthanum barium lithium molybdate laser crystal and preparation method and application thereof |
| 03/24/2010 | CN101676445A Neodymium-doped gadolinium barium lithium tungstate laser crystal and preparation method and application thereof |
| 03/11/2010 | US20100059717 GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND GaN CRYSTAL PRODUCING APPARATUS |
| 03/09/2010 | US7674334 Artificial corundum crystal |
| 03/04/2010 | US20100050932 Apparatus and Method of Direct Electric Melting a Feedstock |
| 03/02/2010 | US7670430 Method of recovering sodium metal from flux |
| 02/24/2010 | EP2155933A2 Method for producing sic single crystal |
| 02/18/2010 | US20100037815 Method For Producing A Single Crystal Of Semiconductor Material |
| 02/17/2010 | EP2154273A1 Method for production of ultraviolet light-emitting hexagonal boron nitride crystal |
| 02/11/2010 | WO2010017232A1 Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| 02/02/2010 | US7655601 Enhanced melt-textured growth |
| 01/28/2010 | WO2010009581A1 A doped low temperature phase barium metaborate single crystal, growth method and frequency converter thereof |
| 01/21/2010 | WO2010006623A2 Semiconductor material and its application as an absorber material for solar cells |
| 01/21/2010 | US20100012020 Method for manufacturing nitride single crystal |
| 01/14/2010 | US20100006777 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient |
| 12/30/2009 | WO2009114130A3 Process and apparatus for diamond synthesis |
| 12/29/2009 | CA2491964C Single crystalline structure material having low material absorption and fabrication method therefor |
| 12/16/2009 | EP2132365A2 Gallium nitride crystal |
| 12/10/2009 | WO2009149299A1 Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
| 12/09/2009 | CN100567596C Method for producing silicon carbide (SiC) single crystal |
| 12/09/2009 | CN100567593C Artificial corundum crystal |
| 12/03/2009 | US20090298265 Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device |
| 12/03/2009 | US20090293805 Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal |
| 12/03/2009 | DE102009003296A1 N-leitender Gruppe III Nitrid-basierter Verbindungshalbleiter und Herstellungsverfahren dafür N-type group III nitride-based compound semiconductor and manufacturing method thereof |
| 12/02/2009 | EP2128309A1 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device |
| 12/02/2009 | CN101595249A Method for growing a crystalline composition comprising gallium nitride |
| 12/02/2009 | CN101591810A Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device |
| 12/02/2009 | CN100565800C Method for obtaining single crystal nitride substrate containing gallium |
| 12/01/2009 | US7625446 High temperature high pressure capsule for processing materials in supercritical fluids |
| 11/28/2009 | CA2666034A1 Method of manufacturing iii nitride crystal, iii nitride crystal substrate, and semiconductor device |
| 11/25/2009 | EP2122016A1 Crystalline composition, wafer, and semi-conductor structure |
| 11/25/2009 | CN101586253A N-type group iii nitride-based compound semiconductor and production method therefor |
| 11/18/2009 | CN101583744A Gallium nitride crystals and wafers and method of making |
| 11/11/2009 | EP2116636A2 Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate |
| 10/27/2009 | US7608565 Method of manufacturing doped superconducting materials |
| 10/21/2009 | EP2109695A2 Crystalline gallium nitride and associated wafer and device |
| 10/15/2009 | US20090255457 System and method for epitaxial deposition of a crystal using a liquid-solvent fluidized-bed mechanism |
| 10/14/2009 | CN101558187A Method for producing group III nitride-based compound semiconductor crystal |
| 10/14/2009 | CN100550543C Nitride semiconductor laser device and a method for improving its performance |