| Patents for C30B 9 - Single-crystal growth from melt solutions using molten solvents (1,363) |
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| 09/25/2008 | DE10313037B4 Verfahren zur Herstellung einer Wasserstoffspeicherlegierung A process for producing a hydrogen storage alloy |
| 09/18/2008 | US20080227617 Artificial Corundum Crystal |
| 09/18/2008 | US20080223288 Crystal growing apparatus |
| 09/09/2008 | US7422633 Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate |
| 09/04/2008 | US20080213158 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride |
| 09/04/2008 | US20080210156 Casting method for polycrystalline silicon |
| 09/02/2008 | US7420261 Bulk nitride mono-crystal including substrate for epitaxy |
| 08/27/2008 | EP1960571A2 Gan crystal sheet |
| 08/21/2008 | WO2008099720A1 Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal |
| 08/21/2008 | WO2008054840A9 Compositions of doped, co-doped and tri-doped semiconductor materials |
| 08/13/2008 | CN101243011A Method of producing group 13 metal nitride crystal, method for manufacturing semiconductor device, and solution and melt used in those methods |
| 08/06/2008 | EP1953801A1 Radiation detector |
| 07/31/2008 | US20080178793 Method and system for forming a higher purity semiconductor ingot using low purity semiconductor feedstock |
| 07/30/2008 | CN101230489A Apparatus for producing single crystal and quasi-single crystal, and associated method |
| 07/17/2008 | WO2008086000A1 Crystalline composition, wafer, and semi-conductor structure |
| 07/10/2008 | WO2008054840A3 Compositions of doped, co-doped and tri-doped semiconductor materials |
| 07/09/2008 | EP1942211A1 Method of and equipment for manufacturing group III nitride crystal |
| 06/19/2008 | WO2008072751A1 Method for producing group iii nitride-based compound semiconductor crystal |
| 06/11/2008 | EP1930294A1 Method for producing group 13 metal nitride crystal, method for manufacturing semiconductor device, and solution and melt used in those methods |
| 06/03/2008 | US7381268 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride |
| 05/29/2008 | WO2008063715A2 Crystal growth system and method for lead-contained compositions using batch auto-feeding |
| 05/28/2008 | CN100390327C Method for growing lead lanthanum zirconate stannate titanate single-crystal utilizing composite fluxing agent |
| 05/20/2008 | US7374615 Method and equipment for manufacturing aluminum nitride bulk single crystal |
| 05/14/2008 | CN100387759C Method and device for separating crystal ingot from pyrolyzed boron nitride crucible |
| 05/13/2008 | US7371280 High pressure crystal growth apparatuses and associated methods |
| 05/08/2008 | US20080108162 Light-Emitting Device Structure Using Nitride Bulk Single Crystal Layer |
| 05/07/2008 | CN101175875A Method and apparatus for producing group III element nitride crystal, and group iii element nitride crystal |
| 05/06/2008 | US7368015 Apparatus for producing single crystal and quasi-single crystal, and associated method |
| 05/02/2008 | WO2008051585A2 Gallium nitride crystal |
| 05/01/2008 | US20080098659 Temporarily adhering array of discrete segments to growth precursor in tacky state; producing high wear resistant tools |
| 04/30/2008 | EP1916321A1 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate |
| 04/29/2008 | US7364619 Process for obtaining of bulk monocrystalline gallium-containing nitride |
| 04/17/2008 | WO2008045337A1 Method for forming nitride crystals |
| 03/27/2008 | WO2008034283A1 Beryllium borate fluoride salt nonlinear optical crystal, its growth method and uses |
| 03/26/2008 | CN100376724C Method for flux growth of Na3La9B8027 |
| 03/26/2008 | CN100376317C High temperature high pressure capsule for processing material in supercritical fluid |
| 03/06/2008 | WO2008028051A1 High-index uv opitcal materials for immersion lithography |
| 03/05/2008 | CN101137774A Container for easily oxidizable or hygroscopic substance, and method for heating and pressuring treatment of easily oxidizable or hygroscopic substance |
| 02/28/2008 | US20080050855 Nitride semiconductor laser device and a method for improving its performance |
| 02/26/2008 | US7335262 Apparatus for obtaining a bulk single crystal using supercritical ammonia |
| 02/14/2008 | WO2005053003A3 Method of production of silicon carbide single crystal |
| 02/13/2008 | CN100368604C Method for producing group iii nitride single crystal and apparatus used therefor |
| 01/31/2008 | US20080022921 Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device |
| 01/30/2008 | CN100365173C Method of production of silicon carbide single crystal |
| 01/23/2008 | EP1881094A1 Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal |
| 01/23/2008 | CN101109106A Process for producing aluminum oxide crystal whisker |
| 01/23/2008 | CN100363253C Method for developing crystal of aluminium phosphate through cosolvent |
| 01/10/2008 | US20080008642 Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby |
| 01/10/2008 | DE10111778B4 Supraleiter-Zwischenprodukt und seine Verwendung Superconductor intermediate and its use |
| 01/08/2008 | US7317237 Photovoltaic conversion device and method of manufacturing the device |
| 01/03/2008 | WO2008001786A1 METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME |
| 01/01/2008 | US7315559 Nitride semiconductor laser device and a method for improving its performance |
| 01/01/2008 | US7314518 Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace |
| 01/01/2008 | US7314517 Process for obtaining bulk mono-crystalline gallium-containing nitride |
| 12/27/2007 | US20070296061 Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device |
| 12/19/2007 | CN101089244A Molten-salt growth method for zinc oxide single crystal |
| 12/19/2007 | CN101089243A Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux |
| 12/18/2007 | US7309534 Three layers, each composed of gallium, aluminum, and/or indium nitrides; second layer includes greater defects in crystal structure, such as a dislocation density, than those of the first and third layers; formed from melt including an alkali or alkaline-earth metal; high quality |
| 12/12/2007 | CN100354458C High pressure high temperature growth of crystalline group III metal nitrides |
| 11/29/2007 | US20070272941 Method For Producing III Group Element Nitride Crystal, Production Apparatus For Use Therein, And Semiconductor Element Produced Thereby |
| 11/28/2007 | EP1860213A1 Method and apparatus for producing group iii nitride crystal |
| 11/28/2007 | EP1859477A1 Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions |
| 11/21/2007 | CN100350081C Flux method for growth of gallium phosphate crystal |
| 11/13/2007 | US7294199 Nitride single crystal and producing method thereof |
| 11/01/2007 | WO2007122949A1 Apparatus for producing nitride single crystal |
| 11/01/2007 | WO2007122867A1 Process for producing nitride single-crystal and apparatus therefor |
| 11/01/2007 | WO2007122866A1 Process for producing single crystal |
| 10/24/2007 | CN101061570A Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions |
| 10/18/2007 | WO2007117034A1 Production methods of semiconductor crystal and semiconductor substrate |
| 10/18/2007 | WO2007117033A1 Apparatus for producing group iii nitride based compound semiconductor |
| 10/18/2007 | WO2007117032A1 Method and apparatus for producing group iii nitride based compound semiconductor |
| 10/11/2007 | US20070234946 Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals |
| 10/10/2007 | CN100342064C Silver nanometer wire synthesizing process |
| 09/27/2007 | WO2007108498A1 Nitride single crystal manufacturing apparatus |
| 09/27/2007 | WO2007108338A1 Process and apparatus for producing nitride single crystal |
| 09/26/2007 | EP1837422A2 Method and apparatus for manufacturing group III nitride crystals |
| 09/26/2007 | EP1837421A2 Crystal preparing device , crystal preparing method, and crystal |
| 09/26/2007 | CN100339512C Improvemrnt of process for obtaining of bulk monocrystallline gallium-containing nitride |
| 09/20/2007 | WO2007105832A1 Semiconductor substrate, electronic device, optical device, and production methods therefor |
| 09/20/2007 | US20070215034 Crystal preparing device, crystal preparing method, and crystal |
| 09/19/2007 | CN101037791A Preparation method of I-type germanium-radical clathrate single-crystal and new single-crystal filled with barium and strontium |
| 09/19/2007 | CN100338268C Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace |
| 09/13/2007 | WO2007102610A1 Single crystal growing method |
| 09/13/2007 | US20070209575 Gallium Nitride Single Crystal Growing Method and Gallium Nitride Single Crystal |
| 08/29/2007 | CN101024900A Method for synthesizing laser crystal emerald jewel by cosolvent method |
| 08/23/2007 | WO2007094126A1 Method of recovering sodium metal from flux |
| 08/23/2007 | US20070194408 Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride |
| 08/16/2007 | US20070189956 Method for producing a monocrystalline cu(in,ga)se2powder, and mono-grain membrane solar cell containing said powder |
| 08/15/2007 | EP1818430A1 Iii group nitride single crystal and method for preparation thereof, and semiconductor device |
| 08/15/2007 | CN1332075C Non-linear optical crystal of cesium rubidium borate, its growth and use |
| 08/09/2007 | US20070181056 Crystals for a semiconductor radiation detector and method for making the crystals |
| 08/07/2007 | US7252712 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 08/01/2007 | CN101010453A Method for preparing crystal of nitride of metal belonging to group 13 of periodic table and method for manufacturing semiconductor device using the same |
| 07/31/2007 | US7250640 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
| 07/19/2007 | US20070163487 A method for producing a single crystal and an apparatus for producing a single crystal |
| 07/18/2007 | CN1327044C Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby |
| 07/12/2007 | US20070157917 High pressure superabrasive particle synthesis |
| 07/12/2007 | US20070157876 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride |
| 07/11/2007 | EP1806439A1 METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL |
| 07/11/2007 | EP1806437A1 Method for preparing silicon carbide single crystal |