Patents for C30B 9 - Single-crystal growth from melt solutions using molten solvents (1,363)
11/2003
11/27/2003WO2003097906A1 Bulk single crystal production facility employing supercritical ammonia
11/26/2003CN1128894C Hydrothermal preparing process for alkaline rare earth-carbonate crystal film
11/12/2003CN1455030A Self double-frequency blue laser crystal neodymium-doped gadolinium-aluminium borate
10/2003
10/16/2003WO2003035945A3 Substrate for epitaxy
10/09/2003WO2003083187A1 High pressure high temperature growth of crystalline group iii metal nitrides
10/02/2003US20030183155 High pressure high temperature growth of crystalline group III metal nitrides
09/2003
09/30/2003US6627582 Non-superconductive phases finely dispersed in rare earth, barium and copper oxide phases of different peritectic temperatures are laminated three-dimensionally, seed crystals
09/24/2003CN1443879A Fused salt pulling method for growing BBO crystal
09/24/2003CN1443878A Fused salt pulling method for growing LBO crystal
09/16/2003US6620752 Method for fabrication of lead-based perovskite materials
09/04/2003US20030164138 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
07/2003
07/31/2003US20030141301 High temperature high pressure capsule for processing materials in supercritical fluids
07/22/2003US6596228 Titanium materials
07/15/2003US6592663 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
07/09/2003CN2559657Y Double controlling temperature crystal grower furnace
07/09/2003CN1113987C Method for growth of gallium nitride monocrystal using molten salt method
06/2003
06/11/2003CN1423381A Tunable violet laser crystal cr3+: REA3 (BO3)4
06/11/2003CN1422993A Growth of LiB3O5 nonlinear optical crystal by integrating rotary crucible and molten salt Czochralski growth method
06/11/2003CN1422987A Growth of laser crystal Yb3+; Nd3+: REA3 (BO3)4 by integrating central seed crystal and rotary crucible molten salt growth method
06/11/2003CN1422986A Preparation of strontium barium niobate columnar single crystal grain by molten-salt growth method
06/04/2003CN1421551A Combined crucible rotating and molten salt pulling method for growing RE3+: KGd (WO4)2 laser crystal
05/2003
05/22/2003WO2003043150A1 Light emitting element structure using nitride bulk single crystal layer
05/13/2003US6562124 Method of manufacturing GaN ingots
05/08/2003US20030085378 Non-hygroscopic, and possess stronger nonlinear optical effect and good mechanical properties
05/07/2003CN1415789A Nonlinear optical crystal of compound Na3 La9 B8 O27 and yts preparation method as well as usage
05/01/2003WO2003036771A1 Nitride semiconductor laser element, and production method therefor
05/01/2003WO2003035945A2 Substrate for epitaxy
04/2003
04/10/2003US20030066478 Crystal growth vessel and crystal growth method
04/08/2003US6545387 Surface acoustic wave filter using novel piezoelectric single crystal substrate
03/2003
03/04/2003US6527853 Method for producing nitride monocrystals
02/2003
02/04/2003US6514476 Anisotropically shaped SrTiO3 single crystal particles
01/2003
01/30/2003WO2003008676A1 Method for preparing tungstate single crystal
12/2002
12/26/2002US20020194953 Titanium materials
12/19/2002WO2002101126A1 Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate
12/19/2002WO2002101125A1 Method of manufacturing bulk single crystal of gallium nitride
12/19/2002WO2002101124A1 Method and equipment for manufacturing aluminum nitride bulk single crystal
12/19/2002WO2002101120A2 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
12/19/2002US20020193237 Method for fabrication of lead-based perovskite materials
12/19/2002US20020192507 Bulk monocrystalline gallium nitride
12/19/2002US20020189531 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
12/18/2002EP1266982A2 Method for production of zinc oxide single crystal
12/12/2002US20020185933 Surface acoustic wave filter using novel peizoelectric single crystal substrate
12/12/2002US20020185055 Method for production of zinc oxide single crystal
12/11/2002EP1155170B1 Method for producing nitride monocrystals
12/10/2002US6491889 Mixed oxide
12/03/2002US6488770 Monocrystalline powder and monograin membrane production
11/2002
11/28/2002US20020175338 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
11/13/2002EP0906246A4 Growth of nickel-cobalt-manganese oxide single crystals
11/06/2002EP0923504A4 Growth of nickel-iron-manganese oxide single crystals
10/2002
10/22/2002US6468498 Composite metal material, preparation thereof and photocatalytic process using same
09/2002
09/18/2002CN1369578A Alkaline rare earth-carbonate crystical film and its hydrothermal preparing process
08/2002
08/29/2002US20020117467 Evaporating drops of transition metal intermetallic forming ultrafine three-dimensional structure on substrate surface; electroconductivity; semiconductors
08/21/2002EP1097262B1 Monocrystalline powder and monograin membrane production
06/2002
06/11/2002US6402838 Crystal growth vessel and crystal growth method
05/2002
05/21/2002US6391229 Borate crystal, growth method of the same and laser equipment using the same
03/2002
03/28/2002US20020036282 Electromechanical actuators
03/21/2002WO2001077501A3 Electromechanical actuators
12/2001
12/20/2001US20010053748 Non-superconductive phases finely dispersed in rare earth, barium and copper oxide phases of different peritectic temperatures are laminated three-dimensionally, seed crystals
12/19/2001EP0986655B1 THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS
11/2001
11/21/2001EP1155170A1 Method for producing nitride monocrystals
11/01/2001US20010035123 Mixed oxide
10/2001
10/30/2001US6309595 Sputtering target, microelectronics
10/18/2001WO2001077501A2 Electromechanical actuators
10/04/2001DE10111778A1 Large superconductor-intermediate product comprises a structure with a finely divided phase with different peritectic temperatures, seed crystals arranged on an oxidic superconductor layer, and excluded phases
09/2001
09/07/2001WO2001064600A1 Method for fabrication of lead based perovskite materials
08/2001
08/22/2001CN1309196A Heating method and equipment for crystal growth
08/14/2001US6273948 Method of fabrication of highly resistive GaN bulk crystals
08/07/2001US6270569 Melting a group iii metal, injecting ammonia into melt produces nitride microcrystal; the two then react on the surface of a seed/substrate crystal, allowing the nitride crystal to be grown; blue laser diodes
07/2001
07/03/2001US6255255 Inor rxn prod containing rare earth, barium, copper oxide
05/2001
05/15/2001US6231779 Piezoelectric actuators and method of making same
05/09/2001EP1097262A1 Monocrystalline powder and monograin membrane production
03/2001
03/27/2001US6207082 Layer-structured oxide and process of producing the same
03/21/2001CN1288079A Method for growth of gallium nitride monomorph using fused salt method
03/13/2001US6200453 Deposition of single crystal cadmium from cadmium halide salt over a polycrystalline base metal by dissolving the cadmium halide salt in an electrolyte solution of metal halide while controlling the temperature
03/07/2001EP1081207A1 Single-crystalline film and process for production thereof
02/2001
02/21/2001CN1284573A Crystal growth container and method
02/07/2001EP1074641A1 Crystal growth vessel and crystal growth method
01/2001
01/09/2001US6171390 Method for preparing oxide single crystalline materials
11/2000
11/16/2000WO2000068148A1 ANISOTROPICALLY SHAPED SrTiO3 SINGLE CRYSTAL PARTICLES
11/07/2000US6143679 Layered crystal structure oxide
10/2000
10/03/2000US6125529 Method of making wafer based sensors and wafer chip sensors
09/2000
09/28/2000DE19963941A1 New borate single crystal, used especially as a wavelength converter for an UV laser, comprises an orthorhombic double alkali metal borate crystal with no central symmetry
08/2000
08/15/2000US6103670 Method of manufacturing oxide superconductor containing Ag and having substantially same crystal orientation
08/10/2000WO2000046431A1 Method for producing nitride monocrystals
08/10/2000DE19904378A1 Verfahren zur Herstellung von Nitrid-Einkristallen A process for producing nitride crystals
08/08/2000US6099164 Monocrystals of nickel-manganese oxide detector having a cubic spinel geometry and a molar ratio ranges from between about .575 to .810; useful for detecting temperature within a range of between about-70 to 200 degree c.
07/2000
07/04/2000US6083886 Method of preparing oxide superconducting bulk body
06/2000
06/20/2000US6076965 Accurate temperature sensor comprising a sensing element including the monocrystal and a pair of terminals, where electrical resistance between the terminals varies with the temperature of the sensing element
06/14/2000EP0979315A4 Titanium crystal and titanium
06/07/2000EP1006595A2 Oxide superconducting material and method of producing the same
05/2000
05/31/2000CN1053021C Aluminium tetraborate gadolinium crystal blended with rare earth and growth method thereof
05/24/2000EP1002324A4 Growth of nickel-cobalt-manganese-copper oxide single crystals
05/24/2000EP1002324A1 Growth of nickel-cobalt-manganese-copper oxide single crystals
05/16/2000US6063254 Method for producing titanium crystal and titanium
04/2000
04/11/2000US6048394 Method for growing single crystals from polycrystalline precursors
04/04/2000US6046139 Making large, single crystal, 123 YBCO superconductors
03/2000
03/30/2000DE19841574A1 Production of optimized melt-textured volume samples of high temperature superconductors comprises preparing the starting material for the green body, mixing, molding and sealing, and then melt-texturing
03/23/2000DE19841576A1 Melt-textured samarium-barium cuprate high temperature superconductor bulk sample, for use as a seed crystal, is produced by melt texturing a top seeded sample in air
03/23/2000DE19841575A1 Melt-textured samarium-barium cuprate high temperature superconductor bulk sample, e.g. for contact-free self-stabilizing magnetic bearings, is produced by top seeding and texture heat treating in air
03/22/2000EP0986655A1 THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS
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