| Patents for C30B 9 - Single-crystal growth from melt solutions using molten solvents (1,363) |
|---|
| 10/14/2009 | CN100550303C Group III nitride crystal, method of its manufacture |
| 09/30/2009 | CN101545138A Non-linear optical crystal-sodium beryllate borate, growth method and application thereof |
| 09/23/2009 | EP2102391A2 Gallium nitride crystals and wafers |
| 09/16/2009 | EP2099956A2 Method for growing a crystalline composition comprising gallium nitride |
| 09/16/2009 | CN101535532A Method for forming nitride crystals |
| 09/15/2009 | US7589358 high quality nitride phosphor substrate manufactured by crystallization from supercritical ammonia-containing solution; light emitting devices; wavelength distribution emitting a white light and a good yield |
| 09/15/2009 | US7588636 Method of production of silicon carbide single crystal |
| 09/11/2009 | WO2009111415A1 System and method for diamond deposition using a liquid-solvent carbon-transfer mechanism |
| 09/08/2009 | US7585365 Corundum crystal formed body |
| 09/02/2009 | CN100535200C Apparatus for production of crystal of group iii element nitride and process for producing crystal of group III element nitride |
| 09/01/2009 | US7582498 Resonant cavity light emitting devices and associated method |
| 08/27/2009 | WO2009104049A1 Silicon substrate, method and equipment for making the silicon substrate |
| 08/26/2009 | CN101514489A Fluoborate and crystal containing rare earth ions, growing method and application of crystal |
| 08/26/2009 | CN101514481A Method for growing a BaAlBO3F2 crystal by fusing agent |
| 08/26/2009 | CN100532658C Method for producing semiconductor crystal |
| 08/20/2009 | WO2008155673A8 Method for producing sic single crystal |
| 08/20/2009 | US20090205561 METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME |
| 08/06/2009 | US20090194732 Method of making ternary piezoelectric crystals |
| 07/29/2009 | EP1740331B1 Method and arrangement for crystal growth from fused metals or fused solutions |
| 07/15/2009 | EP2078105A1 Method for forming nitride crystals |
| 07/09/2009 | US20090173274 PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED THEREON |
| 07/02/2009 | US20090165703 Silicon ingot fabrication |
| 06/18/2009 | US20090151622 Systems and methods for growing polycrystalline silicon ingots |
| 06/17/2009 | EP2071062A1 Process for producing group iii elment nitride crystal, and group iii element nitride crystal |
| 06/11/2009 | WO2009072254A1 Group iii nitride crystal, method for growing the group iii nitride crystal, and apparatus for growing crystal |
| 06/11/2009 | US20090145350 Method of injecting dopant gas |
| 06/09/2009 | USRE40718 Method for producing nitride monocrystals |
| 06/04/2009 | WO2009069564A1 Process for growing single-crystal silicon carbide |
| 06/04/2009 | US20090139446 Process for producing polycrystalline silicon ingot |
| 06/03/2009 | CN100494520C Method for producing iii group element nitride crystal, production apparatus used therein, and semiconductor element produced thereby |
| 05/21/2009 | US20090130014 Silicon recycling method, and silicon and silicon ingot manufactured with that method |
| 05/20/2009 | DE112007000867T5 Verfahren und Vorrichtung zum Herstellen eines Gruppe III-Nitrid basierten Verbindungshalbleiters Method and apparatus for manufacturing a Group III nitride based compound semiconductor |
| 05/20/2009 | DE112007000836T5 Herstellungsverfahren für Halbleiterkristall und Halbleitersubstrat Manufacturing processes for semiconductor crystal and semiconductor substrate |
| 05/20/2009 | CN101435109A Growth method for fluxing medium of boron phosphate single crystal |
| 05/19/2009 | US7534377 nonlinear optical materials are described having the general formula MxM'yScz(BO3)4 where M and M'are metals, typically rare earth metals, and the sum of x, y, and z is about four |
| 05/14/2009 | US20090120354 Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device |
| 05/14/2009 | US20090120353 Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt |
| 05/12/2009 | US7531472 Configured from numerous nanowires grown in a uniform direction, stem shaped cross-sectional configuration |
| 05/12/2009 | US7531038 Crystal growth method |
| 04/30/2009 | WO2009052770A1 Method for reducing macrodefects in the production of single-crystal or monocrystalline layers |
| 04/30/2009 | WO2009030683A3 Method of converting alkaline-earth metal chlorides to tungstates and molybdates and applications thereof |
| 04/28/2009 | US7524691 Method of manufacturing group III nitride substrate |
| 04/22/2009 | CN101415868A Method for manufacturing semiconductor crystal and semiconductor substrate |
| 04/22/2009 | CN101415867A Method and apparatus for manufacturing group III nitride compound semiconductor |
| 04/16/2009 | WO2008133653A3 Method for growing a crystalline composition comprising gallium nitride |
| 04/15/2009 | CN101410558A Apparatus for producing group III nitride based compound semiconductor |
| 04/15/2009 | CN101410557A Semiconductor substrate, electronic device, optical device, and production methods therefor |
| 04/09/2009 | WO2009043167A1 Method for processing silicon powder to obtain silicon crystals |
| 04/09/2009 | WO2007057892A3 Gan crystal sheet |
| 04/09/2009 | CA2700997A1 Method for processing silicon powder to obtain silicon crystals |
| 04/08/2009 | CN101405440A Process for producing nitride single-crystal and apparatus therefor |
| 04/08/2009 | CN101405439A Apparatus for producing nitride single crystal |
| 04/08/2009 | CN101405438A Apparatus for producing nitride single crystal |
| 04/01/2009 | CN100474511C Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing the same |
| 03/25/2009 | CN101395305A Single crystal growing method |
| 03/25/2009 | CN100472821C Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
| 03/25/2009 | CN100472000C Process for obtaining of bulk monocrystalline gallium-containing nitride |
| 03/24/2009 | US7508003 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon |
| 03/24/2009 | US7507292 Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby |
| 03/19/2009 | WO2008155673A3 Method for producing sic single crystal |
| 03/17/2009 | USRE40662 Method of preparing a compound semiconductor crystal |
| 03/12/2009 | WO2009030683A2 Method of converting alkaline-earth metal chlorides to tungstates and molybdates and applications thereof |
| 02/26/2009 | US20090050050 Deep-eutectic melt growth of nitride crystals |
| 02/18/2009 | EP2024285A1 Method for purifying silicon |
| 02/18/2009 | CN101370971A Method of recovering sodium metal from flux |
| 02/12/2009 | US20090038539 Process for producing single crystal |
| 02/12/2009 | DE112007000705T5 Vorrichtung zur Herstellung eines Gruppe III-Nitrid basierten Verbindungshalbleiters Apparatus for manufacturing a Group III nitride based compound semiconductor |
| 02/11/2009 | CN101363131A Top seed solution growth reentrance technology in fluxing agent growth method |
| 01/29/2009 | WO2009015356A1 Method and system for forming a silicon ingot using a low-grade silicon feedstock |
| 01/29/2009 | WO2009012583A1 Use of acid washing to provide purified silicon crystals |
| 01/29/2009 | US20090026423 Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
| 01/29/2009 | CA2694806A1 Use of acid washing to provide purified silicon crystals |
| 01/22/2009 | US20090020067 Method of manufacturing solar-grade polysilicon ingot with relevant induction apparatus |
| 01/21/2009 | CN100453710C Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 01/15/2009 | US20090013925 Device for producing a block of crystalline material with modulation of the thermal conductivity |
| 01/14/2009 | CN100451183C Method for synthesizing laser crystal emerald jewel by cosolvent method |
| 01/01/2009 | US20090000536 Process for producing polycrystalline bulk semiconductor |
| 12/24/2008 | EP1405936B1 Method for manufacturing aluminum nitride bulk single crystal |
| 12/24/2008 | CN100445431C Preparation method of I-type germanium-radical clathrate single-crystal and new single-crystal filled with barium and strontium |
| 12/18/2008 | US20080311417 Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal |
| 12/17/2008 | CN101323980A Large size vanadium sodium borate nonlinear optical crystal, and preparation and use thereof |
| 12/11/2008 | US20080303032 Bulk Mono-Crystalline Gallium-Containing Nitride and Its Application |
| 12/11/2008 | US20080302297 Method of recovering sodium metal from flux |
| 12/10/2008 | CN101319396A Ytterbium doped yttrium lithium tungstate of femtosecond pulsed laser crystal and method of producing the same |
| 12/10/2008 | CN101319386A Preparation method of KTP crystal with anti-soil performance |
| 12/10/2008 | CN101319385A KTP crystal growth method suitable for PPKTP device production |
| 12/10/2008 | CN100441750C Process to produce a CU(IN,GA)SE2 single crystal powder and monograin membrane solarcell comprising this powder |
| 12/04/2008 | WO2008146865A1 Method for production of ultraviolet light-emitting hexagonal boron nitride crystal |
| 12/03/2008 | EP1997941A1 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH |
| 11/27/2008 | US20080289569 Method for Producing Group 13 Metal Nitride Crystal, Method for Manufacturing Semiconductor Device, and Solution and Melt Used in Those Methods |
| 11/26/2008 | CN101311370A Large-sized bismuth zinc borate nonlinear optical crystal, preparation method and use |
| 11/20/2008 | US20080283968 Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device |
| 11/20/2008 | US20080282969 Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor device |
| 11/12/2008 | EP1535309B1 Radiation detector |
| 10/28/2008 | US7442252 Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element |
| 10/15/2008 | CN100425743C Process for growing gallium nitride single crystal utilizing new flux molten-salt growth method |
| 10/09/2008 | WO2008085998A3 Crystalline gallium nitride and associated wafer and device |
| 10/02/2008 | WO2008063444A3 Gallium nitride crystals and wafers |
| 10/02/2008 | WO2008051585A3 Gallium nitride crystal |
| 10/01/2008 | CN100423297C Method for manufacturing N0.3 family nitride substrate |