C30B 9 - Single-crystal growth from melt solutions using molten solvents

Patents for C30B 9 - Single-crystal growth from melt solutions using molten solvents (1,363)
07/2005
07/14/2005	US20050152820 High temperature high pressure capsule for processing materials in supercritical fluids
07/14/2005	CA2550921A1 Method for producing a monocrystalline cu(in,ga)se<sb>2</sb> powder, and monograin membrane solar cell containing said powder
07/13/2005	EP1553216A2 Method of manufacturing group-III nitride crystal
06/2005
06/30/2005	US20050139152 Optical lithography fluoride crystal annealing furnace
06/29/2005	EP1548160A1 Method for producing group iii element nitride single crystal and group iii element nitride transparent single crystal prepared thereby
06/29/2005	EP1548159A1 Process to produce a Cu(In,Ga)Se2 single crystal powder and monograin membrane solarcell comprising this powder
06/16/2005	WO2005054550A1 Artificial corundum crystal
06/15/2005	EP1540047A1 Oh and h resistant silicon material
06/09/2005	WO2005053003A2 Method of production of silicon carbide single crystal
06/08/2005	EP1538241A2 Group III nitride crystal, method of its manufacturing, and equipment for manufacturing group III nitride crystal
06/02/2005	WO2005049497A1 The synthesis of ordered zirconium titanate
06/01/2005	EP1535309A1 Radiation detector
05/2005
05/26/2005	US20050109270 Optical lithography fluoride crystal annealing furnace
05/26/2005	US20050109263 Electromechanical actuators
05/12/2005	WO2005043638A1 Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
05/12/2005	US20050098095 Gallium nitride crystals and wafers and method of making
05/12/2005	US20050098090 Group III Nitride Crystal, Method of Its Manufacture, and Equipment for Manufacturing Group III Nitride Crystal
05/05/2005	US20050092231 Method and apparatus for making crystals without a pre-melt step
05/04/2005	CN1612295A Group III nitride crystal, method of its manufacture, and equipment for manufacturing group III nitride crystal
04/2005
04/28/2005	US20050087753 Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
04/28/2005	US20050087124 Method and equipment for manufacturing aluminum nitride bulk single crystal
04/06/2005	EP1520329A2 Nitride semiconductor laser device and a method for improving its performance
03/2005
03/30/2005	EP1518009A1 Process for obtaining of bulk monocrystallline gallium-containing nitride
03/30/2005	CN1600906A Large size non-linear optic crystal of boron phosphate, flux growth method and usage
03/16/2005	EP1514958A1 Bulk single crystal production facility employing supercritical ammonia
03/09/2005	EP1513204A2 High-temperature superconducting device and method of manufacturing same
02/2005
02/24/2005	WO2004007352B1 Borate crystals for optical frequency conversion
02/02/2005	CN1575534A Light emitting element structure using nitride bulk single crystal layer
02/02/2005	CN1575533A 氮化物半导体激光元件及其制造方法 The nitride semiconductor laser device and its manufacturing method
02/02/2005	CN1575357A Substrate for epitaxy
02/02/2005	CN1187482C Preparation of strontium barium niobate columnar single crystal grain by molten-salt growth method
01/2005
01/19/2005	CN1566411A Neodymium-doped barium-lanthanum borate ( Ba3La2(BO3)4 ) laser crystal and its preparation method and use
12/2004
12/30/2004	US20040261692 Substrate for epitaxy
12/29/2004	EP1490537A1 High pressure high temperature growth of crystalline group iii metal nitrides
12/23/2004	WO2004111317A1 Method of manufacturing doped superconducting materials
12/23/2004	US20040256246 Electrode pad for debonding paint from a nonconductive surface
12/23/2004	US20040255840 Method for forming gallium-containing nitride bulk single crystal on heterogenous substrate
12/16/2004	US20040251471 Light emitting element structure using nitride bulk single crystal layer
12/09/2004	US20040244680 Method of manufacturing bulk single crystal of gallium nitride
12/02/2004	WO2004104276A1 Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element
12/02/2004	US20040238810 Nitride semiconductor laser device and manufacturing method therefor
11/2004
11/23/2004	CA2314732C Crystal growth vessel and crystal growth method
11/17/2004	EP1477590A2 Enhanced melt-textured growth
11/04/2004	WO2004004085A3 Nitride semiconductor laser device and a method for improving its performance
10/2004
10/14/2004	WO2003083187A8 High pressure high temperature growth of crystalline group iii metal nitrides
09/2004
09/30/2004	WO2004083498A1 Method for producing group iii nitride single crystal and apparatus used therefor
09/23/2004	WO2004081264A1 Method and apparatus for the crystallization of one or more compounds
09/22/2004	EP1460153A2 Crystal growth vessel and crystal growth method
09/21/2004	US6794533 Single-crystalline film and process for production thereof
09/02/2004	WO2004007352A3 Borate crystals for optical frequency conversion
09/01/2004	EP1453159A1 Light emitting device structure using nitride bulk single crystal layer
09/01/2004	EP1453158A1 Nitride semiconductor laser element, and production method therefor
09/01/2004	CN1526037A Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
08/2004
08/26/2004	WO2004071649A1 High temperature high pressure capsule for processing materials in supercritical fluids
08/26/2004	US20040165858 Oh and h resistant silicon material
08/19/2004	WO2004053206A9 Process for obtaining bulk monocrystalline gallium-containing nitride
08/19/2004	WO2004048291A3 Method of producing textured ceramic based on lead magnesium niobate and lead titanate
08/19/2004	US20040159647 Melting and vaporizing apparatus and method
08/12/2004	WO2004067814A1 Method for preparing single crystal of iii group element nitride and transparent single crystal of iii group element nitride prepared thereby
08/04/2004	EP1442162A2 Substrate for epitaxy
08/04/2004	CN1518138A Method for manufacturing N0.3 family nitride substrate
07/2004
07/29/2004	US20040147096 Method of manufacturing Group III nitride substrate
07/22/2004	WO2004061923A1 Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
07/22/2004	US20040139912 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
07/22/2004	US20040139911 Electromechanical actuators
07/21/2004	EP1439572A2 Method of manufacturing group III nitride substrate
07/15/2004	US20040134413 Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
07/06/2004	US6758899 Crystal growth vessel and crystal growth method
07/01/2004	US20040124434 Gallium nitride crystal and method of making same
06/2004
06/30/2004	EP1432853A2 Process and apparatus for obtaining bulk monocrystalline gallium- containing nitride
06/24/2004	WO2004053208A1 Process for obtaining bulk-crystalline gallium-containing nitride
06/24/2004	WO2004053206A1 Process for obtaining bulk monocrystalline gallium-containing nitride
06/10/2004	WO2004048291A2 Method of producing textured ceramic based on lead magnesium niobate and lead titanate
05/2004
05/13/2004	US20040089221 Bulk monocrystalline gallium nitride
05/05/2004	CN1493718A Preparation method of barium sodium niobate cylindrical monocrystal particle
04/2004
04/29/2004	WO2002101120A3 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
04/28/2004	CN1492083A Process for preparing laser rod with undoped ends
04/22/2004	US20040075082 Single-crystalline film and process for production thereof
04/07/2004	EP1405936A1 Method and equipment for manufacturing aluminum nitride bulk single crystal
03/2004
03/18/2004	DE10241759A1 High temperature superconducting component used in power engineering, motive power engineering and in transport engineering comprises superconductor segments between which coherent grain boundaries are removed
03/17/2004	CN1142328C Nonlinear optical crystal of compound Na3 La9 B8 O27 and preparation method and use thereof
02/2004
02/19/2004	US20040031437 Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
02/12/2004	WO2004013385A1 Method for producing group iii element nitride single crystal and group iii element nitride transparent single crystal prepared thereby
02/11/2004	CN1473967A Nd doped withe scandium-strontium-yttrium borate laser crystal and its preparing method and use
02/04/2004	CN1137292C Heating method and equipment for crystal growth
01/2004
01/22/2004	WO2004007352A2 Borate crystals for optical frequency conversion
01/21/2004	EP1382722A2 Optical Lithography Fluoride Crystal Annealing Furnace
01/15/2004	WO2004005203A1 Oh and h resistant silicon material
01/08/2004	WO2004004085A2 Nitride semiconductor laser device and a method for improving its performance
01/08/2004	WO2004003261A1 Process for obtaining of bulk monocrystallline gallium-containing nitride
12/2003
12/31/2003	CN1464920A Method for preparing tungstate single crystal
12/24/2003	CN1463309A Method of forming gallium-contg. nitride bulk single crystal on heterogeneneous substrate
12/24/2003	CN1463308A Method for obtaining bulk monocrystalline gallium nitride
12/24/2003	CN1463307A Method for mfg. aluminum nitride bulk single crystal
12/18/2003	WO2003105197A1 Radiation detector
12/17/2003	CN2592657Y Water cooling apparatus for controlling fused silicon crystallization rate for high-temperature cyrstallization furnace
12/17/2003	CN1461826A Laser crystal NdA3 (BO3)4 used for generating blue-violet coloured laser
12/02/2003	US6656615 Bulk monocrystalline gallium nitride
11/2003
11/27/2003	WO2003098757A1 Light emitting element structure having nitride bulk single crystal layer
11/27/2003	WO2003098708A1 Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same

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