Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
04/2014
04/23/2014CN103741217A Sodium yttrium borate, sodium yttrium borate nonlinear optical crystal as well as preparation method and application of sodium yttrium borate nonlinear optical crystal
04/23/2014CN103741216A Ingot casting method for purification of silicon powder
04/23/2014CN103741215A Ingot casting method of granular polysilicon
04/23/2014CN103741214A Polycrystalline silicon ingot casting process
04/23/2014CN103741213A Melting process for polycrystalline silicon cast ingots
04/23/2014CN103741212A Crystal growth furnace and control method for thermal field of crystal growth furnace
04/23/2014CN103741211A Crystal growth furnace and control method for uniform heat dissipation of crystal growth furnace
04/23/2014CN103741210A Method and device for electron beam melting to remove oxygen from polysilicon and continuous ingot casting
04/23/2014CN103741209A Continuous observation window for growth of sapphire crystals by kyropoulos method
04/23/2014CN103741207A High-quality crystal growth method
04/23/2014CN103741206A Polycrystalline silicon ingot casting molten material and impurity removing process
04/23/2014CN103741205A Full monocrystalline silicon ingot casting furnace
04/23/2014CN103741203A Mineralizing agent for growing CuI single crystal by hydrothermal method and CuI crystal growing method
04/23/2014CN102658362B Water cooling copper crucible directional freezing method for superhigh-temperature Nb-Si alloy
04/23/2014CN102383187B Growth method of sapphire single crystal
04/23/2014CN102208340B Method for making self-support gallium nitride substrate
04/23/2014CN102187253B Photonic crystal device
04/23/2014CN101896441B Method for producing Ca-La-F-based light-transparent ceramic, Ca-La-F-based light-transparent ceramic, optical member, optical system
04/17/2014WO2014058701A1 Semiconducting material laminate and sheet
04/17/2014WO2014058698A1 Sheet of semiconducting material, system for forming same, and method of forming same
04/17/2014WO2014056157A1 Polycrystalline silicon ingot, method for producing the same, and crucible
04/17/2014US20140106258 Truncated Ditetragonal Gold Prisms
04/16/2014EP2719794A2 Plasma etching of diamond surfaces
04/16/2014EP2718484A2 Rare earth reduced garnet systems and related microwave applications
04/16/2014CN203546211U Crucible for growing large-size square sapphire single crystals
04/16/2014CN203546207U Induction coil for growth of large-size silicon carbide crystal
04/16/2014CN203546206U Lower furnace lid lifting mechanism
04/16/2014CN203546205U Ingot furnace temperature detection device and ingot furnace with ingot furnace temperature detection device
04/16/2014CN203546204U Quartz ceramic crucible
04/16/2014CN203546203U Crucible for SIC crystal growth
04/16/2014CN203546202U Constant temperature cooling water system of crystal growth furnace
04/16/2014CN203546201U Lifting device for crucible
04/16/2014CN203546198U Feeding device of mono-crystal furnace
04/16/2014CN203546197U Device for reducing oxygen content of gallium-mixed silicon single crystals
04/16/2014CN203543232U Heterotypic carbon felt for crystal growth of sapphire
04/16/2014CN103732809A Method for peeling group 13 element nitride film
04/16/2014CN103732808A Silicon carbide single crystal manufacturing device
04/16/2014CN103732807A Ingot growing apparatus and method of manufacturing ingot
04/16/2014CN103726621A Anti-static tile and production method thereof
04/16/2014CN103726106A Epitaxial growth method
04/16/2014CN103726105A Growing apparatus and method for Ti sapphire crystal
04/16/2014CN103726104A Mold for growing two thick plate-shaped sapphires by edge-defined film-fed crystal growth method (EFG)
04/16/2014CN103726102A Method for preparing super-long one-dimensional mono-crystalline silicon nano/micron structure
04/16/2014CN103726101A Ending method for reducing fracture of edge-defined film-fed crystal growth tubular sapphire crystal
04/16/2014CN103726100A Polycrystalline gallium arsenide synthetic method without liquid encapsulation
04/16/2014CN103724212A Chiral (S)-phenylethylamine hydrochloride cobalt chloride complex crystal
04/16/2014CN102851545B Ni-Mn-Ge magnetic shape memory alloy and preparation method thereof
04/16/2014CN102517625B Boric acid strontium lithium micropore crystal and preparation method thereof and application
04/16/2014CN102409392B Method for preparing SmS thin film by solvothermal method
04/16/2014CN102358951B Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches
04/16/2014CN102352530B Heat shield device for CZ-Si single crystal furnace
04/16/2014CN102286780B Polycrystalline furnace infrared temperature controlling device and polycrystalline furnace adopting same
04/16/2014CN102286779B Polycrystalline furnace using lower chamber heat-insulation structure
04/16/2014CN102268724B Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell
04/16/2014CN102257190B Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
04/16/2014CN102165107B Single crystal scintillator material, method for producing same, radiation detector and PET system
04/16/2014CN101970708B Thin film of aluminum nitride and process for producing the thin film of aluminum nitride
04/16/2014CN101831710B Method for preparing lead titanate monocrystal nanometer branch crystal with perovskite structure
04/16/2014CN101775651B Single crystal growth method of monopotassium phosphate with large caliber and high quality
04/16/2014CN101654269B Method for producing boehmite particles and method for producing alumina particles
04/15/2014US8698286 High voltage switching devices and process for forming same
04/10/2014WO2014054351A1 Substrate for epitaxial growth, manufacturing method therefor, and substrate for superconductor wire
04/10/2014WO2014054284A1 Nitride semiconductor structure, laminate structure, and nitride semiconductor light-emitting element
04/10/2014WO2014054214A1 Silicon single crystal growing apparatus and silicon single crystal growing method
04/10/2014US20140099718 Single-crystal apatite nanowires sheathed in graphitic shells and synthesis method thereof
04/10/2014US20140097446 Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
04/10/2014US20140097349 Stabilized thallium bromide radiation detectors and methods of making the same
04/10/2014DE112012003129T5 Tiegel zum Herstellen eines Verbindungskristalls, Vorrichtung zum Herstellen eines Verbindungskristalls und Verfahren zum Herstellen eines Verbindungskristalls mittels eines Tiegels For producing a compound crystal, apparatus for making a compound crystal and method for producing a compound crystal crucible by means of a crucible
04/10/2014DE112010002935B4 Epitaktischer Siliciumwafer und Verfahren zur Herstellung desselben Epitaxial silicon wafer and method for manufacturing the same
04/09/2014EP2716797A1 Oxide superconductor thin film, superconducting fault current limiter, and method for manufacturing oxide superconductor thin film
04/09/2014EP2715326A1 Diamond sensors, detectors, and quantum devices
04/09/2014EP2714969A1 Composite active molds and methods of making articles of semiconducting material
04/09/2014EP2714968A1 Process for the growth of a crystalline solid, associated crystalline solid and device
04/09/2014CN203530499U Crucible suitable for being used in kyropoulos sapphire single crystal growth furnace
04/09/2014CN203530498U Base plate of aluminium oxide single crystal growth equipment
04/09/2014CN203530497U Double-door sapphire single crystal growth furnace chamber
04/09/2014CN203530496U Polycrystalline silicon ingot casting device
04/09/2014CN203530495U Polycrystalline silicon ingot casting device
04/09/2014CN203530494U Ingot silicon rod with process protective end
04/09/2014CN203530493U Polycrystalline silicon ingot furnace
04/09/2014CN203530492U Polycrystalline silicon ingot casting furnace
04/09/2014CN203530491U Polycrystalline silicon ingot casting device
04/09/2014CN203530490U Polycrystalline silicon ingot furnace thermal field structure
04/09/2014CN203530489U Polycrystalline silicon ingot furnace thermal field structure
04/09/2014CN203530488U Polycrystalline silicon ingot furnace
04/09/2014CN203530487U Polycrystalline silicon ingot casting thermal field structure
04/09/2014CN203530486U Polycrystalline silicon ingot furnace thermal field structure
04/09/2014CN203530485U Polycrystalline silicon ingot furnace thermal field structure
04/09/2014CN203530484U Ingot furnace graphite bottom plate capable of precisely positioning
04/09/2014CN203530480U Equipment for growing sapphire single crystals
04/09/2014CN203530478U Quartz pin used in single crystal furnace
04/09/2014CN203530477U Polycrystalline silicon ingot furnace
04/09/2014CN203530476U Polycrystalline silicon ingot casting device
04/09/2014CN203530429U Semiconductor film growth equipment
04/09/2014CN103717791A Diamond semiconductor system and method
04/09/2014CN103717790A Crucible for manufacturing compound crystal, apparatus for manufacturing compound crystal, and method for manufacturing compound crystal using crucible
04/09/2014CN103710761A Mechanism capable of realizing lifting and rotating integrated movement of furnace door
04/09/2014CN103710757A Growth method for improving surface quality of indium gallium nitrogen epitaxial material
04/09/2014CN103710756A Antiferroelectric crystal lead lutecium niobate-lead titanate and preparation method thereof
04/09/2014CN103710755A Rare earth co-doping activated yttrium-aluminum-scandium garnet luminescent material and melt crystal growth method thereof
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