Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2014
10/09/2014WO2014162373A1 Epitaxial silicon wafer and method for manufacturing same
10/09/2014WO2014161774A1 Method and device for oriented solidification of a monocrystalline plate-like body
10/09/2014US20140302664 Synthesis, capping and dispersion of nanocrystals
10/09/2014DE102013107193A1 Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben Of the same blank out of silicon, a process for its preparation and use
10/08/2014EP2787104A1 Method for producing group 13 nitride crystal and apparatus for producing the same
10/08/2014EP2785898A1 Production of mono-crystalline silicon
10/08/2014EP2785897A1 Continuous synthesis of high quantum yield inp/zns nanocrystals
10/07/2014US8853829 Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
10/07/2014US8853828 Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
10/07/2014US8853670 III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
10/07/2014US8853103 Method for manufacturing semiconductor wafer
10/07/2014US8853064 Method of manufacturing substrate
10/07/2014US8853030 Method for production of selective growth masks using underfill dispensing and sintering
10/07/2014US8852965 Method of making semiconductor having superhydrophilic principal surface and method of arranging particles thereon
10/07/2014US8852696 Method for vapor deposition
10/07/2014US8852343 Apparatus for crystal growth
10/07/2014US8852341 Methods for producing GaN nutrient for ammonothermal growth
10/07/2014US8852340 Method for manufacturing single crystal
10/07/2014US8852316 Process for the preparation of silver nano particles
10/02/2014WO2014159879A1 Czochralski crucible for controlling oxygen and related methods
10/02/2014WO2014157332A1 Method for manufacturing silicon carbide semiconductor substrate
10/02/2014WO2014157192A1 Sliding member and slide bearing
10/02/2014WO2014157000A1 Carbon-doped zinc oxide film and method for producing same
10/02/2014WO2014156986A1 Silicon single crystal production apparatus, and silicon single crystal production method
10/02/2014WO2014156914A1 Method for processing group-iii nitride substrate and method for manufacturing epitaxial substrate
10/02/2014WO2014156780A1 Method for producing sapphire single crystal
10/02/2014WO2014156597A1 Compound semiconductor single crystals for photoelectric conversion elements, photoelectric conversion element, and production method for compound semiconductor single crystals for photoelectric conversion elements
10/02/2014WO2014156596A1 Compound semiconductor wafer, photoelectric conversion element, and method for producing group iii-v compound semiconductor single crystals
10/02/2014WO2014156394A1 Silicon carbide epitaxial wafer, method for manufacturing silicon carbide epitaxial wafer, device for manufacturing silicon carbide epitaxial wafer, and silicon carbide semiconductor element
10/02/2014WO2014156191A1 Manufacturing method for semiconductor light-emitting element, and semiconductor light-emitting element
10/02/2014WO2014155985A1 Device for manufacturing silicon single crystal and method for manufacturing silicon single crystal using same
10/02/2014WO2014154557A1 Photonic crystals
10/02/2014WO2014154148A1 Preparation method and use of color saturation variable photonic crystal material
10/02/2014US20140295171 Ingot, silicon carbide substrate, and method for producing ingot
10/02/2014US20140295136 SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
10/02/2014US20140291700 Sic single crystal, sic wafer, and semiconductor device
10/02/2014US20140290740 Methods and Apparatuses for Manufacturing Geometric Multicrystalline Cast Silicon and Geometric Multicrystalline Cast Silicon Bodies for Photovoltaics
10/02/2014DE102014205466A1 Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung Single crystal 4H-SiC substrate and process for its preparation
10/02/2014DE102013103271A1 Verfahren und Anordnung zur gerichteten Erstarrung eines einkristallinen plattenförmigen Körpers Method and apparatus for directional solidification of a single crystal plate-like body
09/2014
09/30/2014US8847363 Method for producing group III nitride crystal
09/30/2014US8847279 Defect reduction using aspect ratio trapping
09/30/2014US8846506 Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100)
09/30/2014US8845992 III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate
09/30/2014US8845927 Functionalized nanoparticles and method
09/30/2014US8845872 Sample processing droplet actuator, system and method
09/30/2014US8845805 Device and method for producing crystalline bodies by directional solidification
09/25/2014WO2014148820A1 Two-dimensional large-area growth method for chalcogen compound, method for manufacturing cmos-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and cmos-type structure
09/25/2014WO2014148695A1 Method of interpreting sapphire single-crystal growth and method of growing sapphire single-crystal
09/25/2014WO2014148683A1 Silicon ingot manufacturing device
09/25/2014WO2014148158A1 Crucible for growing sapphire single crystal and method for growing sapphire single crystal
09/25/2014WO2014148157A1 Crucible for use in growing sapphire single crystal and method for growing sapphire single crystal
09/25/2014WO2014148156A1 Crucible for growing sapphire monocrystal and method for growing sapphire monocrystal
09/25/2014WO2014147262A1 Blank made of silicon, method for the production thereof and use thereof
09/25/2014WO2014147125A1 Apparatus and process for the hydrothermal production of quartz crystals
09/25/2014WO2014147094A1 Blank composed of silicon, method for producing same, and use of same
09/25/2014WO2014146948A1 Surface-tensioned sapphire plate
09/25/2014WO2014146947A1 Break resistant and shock resistant sapphire plate
09/25/2014US20140287226 Ingot, silicon carbide substrate, and method for producing ingot
09/25/2014DE112012003499T5 Depositionssystem mit Zugangstoren sowie Verfahren dafür Deposition system with access gates and method therefor
09/25/2014DE102013107189A1 Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben Of the same blank out of silicon, a process for its preparation and use
09/24/2014EP2782117A1 SiC epitaxial wafer and semiconductor device
09/24/2014EP2781631A1 Vapor phase growth apparatus and vapor phase growth method
09/24/2014EP2780710A2 Metal/silica core/shell nanoparticles, manufacturing process and immunochromatographic test device comprising such nanoparticles
09/23/2014US8841221 MOCVD reactor having cylindrical gas inlet element
09/23/2014US8840724 Continuous growth of single-wall carbon nanotubes using chemical vapor deposition
09/23/2014US8840722 Graphene production using laser heated crystal growth
09/23/2014US8840721 Method of manufacturing silicon single crystal
09/23/2014US8840720 Method for manufacturing a polycrystalline silicon thin film by joule-heating induced crystallization
09/23/2014CA2778082C Electrode and method for supplying current to a reactor
09/18/2014WO2014145286A1 Sic substrate with sic epitaxial film
09/18/2014WO2014143966A1 Sapphire sheets and apparatus and method for producing sapphire sheets with angled heat shields
09/18/2014WO2014143955A1 Sapphire ribbons and apparatus and method for producing a plurality of sapphire ribbons having improved dimensional stability
09/18/2014WO2014141959A1 METHOD AND DEVICE FOR MANUFACTURING GALLIUM NITRIDE (GaN) FREE-STANDING SUBSTRATE
09/18/2014WO2014140372A1 Light emitting diode semiconductor structures having active regions comprising ingan
09/18/2014WO2014140371A1 Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
09/18/2014WO2014138878A1 Metal organic framework, production and use thereof
09/18/2014US20140271439 Group 13 nitride crystal and method for production of group 13 nitride crystal
09/18/2014US20140271436 Rare Earth Oxyorthosilicate Scintillation Crystals
09/18/2014DE102014103518A1 Ein verfahren zum herstellen eines siliziumkarbidsubstrats für eine elektrische siliziumkarbidvorrichtung, ein siliziumkarbidsubstrat und eine elektrische siliziumkarbidvorrichtung A method for producing a silicon carbide substrate for electrical siliziumkarbidvorrichtung, a silicon carbide substrate and an electrical siliziumkarbidvorrichtung
09/18/2014DE102013107188A1 Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben Of the same blank out of silicon, a process for its preparation and use
09/17/2014EP2778264A1 Silicon member for semiconductor apparatus and method of producing the same
09/17/2014EP2778252A2 Layered Coatings For Sapphire Structure
09/16/2014US8835983 Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers
09/16/2014US8835865 Mixed crystal organic scintillators
09/16/2014US8835284 Method of manufacturing annealed wafer
09/16/2014US8834630 Defect reduction in seeded aluminum nitride crystal growth
09/16/2014US8834629 Rhombohedral fluoroberyllium borate crystals and hydrothermal growth thereof for use in laser and non-linear optical applications and devices
09/16/2014US8834628 Method of semiconductor nanocrystal synthesis
09/16/2014US8834627 Method for producing a single crystal composed of silicon by remelting granules
09/14/2014CA2810048A1 Highly efficient electrolytic production of graphite, including oxidation and reduction of graphite, using carbon gases and compounds with subsequent electrolytes, for the manufacture and laying onto substrates of single or multi layer graphene sheets
09/12/2014WO2014138409A1 Oriented photocatalytic semiconductor surfaces
09/12/2014WO2014137635A1 Growth of crystalline materials on two-dimensional inert materials
09/12/2014WO2014137072A1 Apparatus and method for growing silicon carbide single crystals
09/12/2014WO2014136903A1 Method for producing silicon carbide single crystal
09/12/2014WO2014136749A1 Nitride semiconductor crystals and production method therefor
09/12/2014WO2014136633A1 Ga2O3 SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR
09/12/2014WO2014136602A1 Method for manufacturing gallium nitride crystal free-standing substrate
09/12/2014WO2014136393A1 Processed substrate and semiconductor device using same
09/12/2014WO2014135979A1 Copper-indium-gallium-chalcogenide nanoparticle precursors for thin-film solar cells
09/12/2014WO2014135547A1 Synthetic diamond optical elements
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