Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2013
11/20/2013CN203295658U Kyropoulos method sapphire crystal oven heating body structure
11/20/2013CN203295657U Seed crystal chuck for growth of sapphire crystal by kyropoulos method
11/20/2013CN203295655U Continuous feeding device used for independently heating double crucibles grown with sapphire crystal dynamic temperature method
11/20/2013CN203295654U Novel graphite crucible bottom
11/20/2013CN203295653U Crucible for crystal growth
11/20/2013CN1961100B Directionally controlled growth of nanowhiskers
11/20/2013CN103403842A Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same
11/20/2013CN103403231A Method for manufacturing n-type silicon single crystal, and phosphorus-doped n-type silicon single crystal
11/20/2013CN103397388A Method for preparing zirconium silicate whiskers by non-hydrolytic sol-gel technique
11/20/2013CN103397387A Preparation method of rhodium-palladium alloy nano dendrite and rhodium-palladium alloy nano dendrite prepared by same
11/20/2013CN103397386A Doping technology for single crystal growth of n-type low-resistance gallium arsenide
11/20/2013CN103397385A Ytterbium, lutecium, gadolinium and gallium doped garnet laser crystal, preparation method and applications thereof
11/20/2013CN103397384A Seed crystal for growing cesium lithium borate single crystal and application thereof
11/20/2013CN103397383A Energy-saving sapphire crystal furnace and usage thereof
11/20/2013CN103397382A Preparation method of zinc-oxide nanorod array film
11/20/2013CN103397381A Preparation method for epitaxial germanium film through polymer auxiliary deposition
11/20/2013CN103397380A Polysilicon ingot furnace and rapid ingot casting technology thereof
11/20/2013CN103397379A High-efficiency polycrystalline silicon ingot casting furnace
11/20/2013CN103397378A Preparation method of polycrystalline silicon ingot
11/20/2013CN103397377A Uniform polycrystalline silicon crystal growing technology and ingot furnace thermal field heating device thereof
11/20/2013CN103397376A Method for growing InGaAs material with low dislocation density and high indium composition by adopting LP-MOCVD (Low Pressure Metal-Organic Chemical Vapor Deposition) system
11/20/2013CN103397375A Sapphire furnace with rotary heat insulated tungsten screen
11/20/2013CN103394704A Method for preparing high-purity gold nanoparticle bipyramid and composite nanomaterial of gold nanoparticle bipyramid
11/20/2013CN102674317B C injection-based Ni film assisted SiC substrate graphene nanoribbon preparation method
11/20/2013CN102272362B Group iii nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group iii nitride substrate
11/20/2013CN101906664B Manufacturing device for silicon carbide single crystal
11/19/2013US8585821 SiC epitaxial substrate and method for producing the same
11/14/2013WO2013169364A1 Method of microbially producing metal gallate spinel nano-objects, and compositions produced thereby
11/14/2013WO2013168707A1 Heat dissipation substrate and method for producing same
11/13/2013EP2662335A1 Polycrystalline silicon rod and process for production thereof
11/13/2013CN203284498U Zone-melting furnace thermal field with double heating power supplies
11/13/2013CN203284496U Silicon ingot furnace and leakage detection device thereof
11/13/2013CN203284495U Crystal continuous culture and filter system
11/13/2013CN103392223A Method of manufacturing silicon substrate and silicon substrate
11/13/2013CN103388181A Terahertz non-linear optical crystal 4-[4-(dimethylamino)styryl]-methylpyridine . p-toluenesulfonate
11/13/2013CN103388180A Industrial production method of relaxor ferroelectric single crystal PMN-PT
11/13/2013CN103388179A Co-doped thallium-doped cesium iodide scintillation crystal, preparation method thereof and applications thereof
11/13/2013CN103388178A Epitaxial structure of III-group nitride and growth method thereof
11/13/2013CN103388177A Growing device and method of semiconductor film
11/13/2013CN103388176A Ingot furnace and method for preparing silicon ingot
11/13/2013CN103388175A Method for preparing silver dendritic matter
11/13/2013CN102583813B Recovery method for terephthalic acid in alkali deweighting wastewater as well as production method and application of terephthalic acid metal salt whisker
11/13/2013CN102312284B Thermal field of straight pulling silicon single crystal furnace with a plurality of exhaust pipelines uniformly and downward distributed
11/13/2013CN102312283B Single crystal furnace having double auxiliary furnace chamber structure and production method for monocrystalline silicon
11/13/2013CN102286777B H3PO4 corrosive seed crystal for growing GaN (Gallium Nitride) single crystal by using HVPE (Hydride Vapor Phase Epitaxial) and preparation method thereof
11/13/2013CN102224113B Silica vessel and process for producing same
11/13/2013CN102219796B Coordination polymer with selective ion exchange property, and applications thereof
11/13/2013CN101676441B Single-layer beta phase nickel hydroxide two dimensional nano single chip and synthesizing method thereof
11/12/2013US8580031 Method of producing three-dimensional photonic crystal and optical functional device
11/07/2013US20130295363 Metal nitrides and process for production thereof
11/07/2013CA2813276A1 Polycrystalline silicon rod and process for production thereof
11/06/2013EP2660368A1 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL
11/06/2013EP2660367A1 Semi-insulating silicon carbide single crystal and growing method therefor
11/06/2013EP2660366A1 Silicon carbide substrate, semiconductor device, method for producing silicon carbide substrate, and method for producing semiconductor device
11/06/2013EP2660365A1 Method for producing semiconductor crystal, crystal production device, and group 13 nitride semiconductor crystal
11/06/2013EP2659962A1 Target material conversion method, crystal manufacturing method, composition manufacturing method, and target material conversion device
11/06/2013EP2659504A1 Deposition systems and processes
11/06/2013EP2659033A1 METHOD FOR INCREASING THE CONTENT OF CE<sp>3+</sp> IN LASER MATERIALS
11/06/2013EP2659032A1 Method of manufacturing annealed wafer
11/06/2013EP2659030A1 Method of manufacturing silicon single crystal, silicon single crystal, and wafer
11/06/2013CN203270092U Crucible unit for growing crystal
11/06/2013CN203270090U Crucible clamp for three-jaw crystal pulling furnace
11/06/2013CN203264675U Heating and heat-preserving element for artificial diamond single crystal growth
11/06/2013CN103384910A Semiconductor device manufacturing method
11/06/2013CN103382577A [(CH3O)2CO]3Li2[C2BF204]2 single crystal and preparation method and application thereof
11/06/2013CN103382576A Copper sulphide-doped cubic crystal zinc sulfide material and preparation method thereof
11/06/2013CN103382575A A sapphire substrate
11/06/2013CN103382574A Nonlinear optical crystal Pb2TiOF(SeO3)2Cl, its preparation and application
11/06/2013CN103382573A Nonlinear optical crystal Pb2NbO2(SeO3)2Cl, its preparation and application
11/06/2013CN103382572A Crucible for enabling polycrystalline silicon ingot to be free of black edge and preparation method thereof
11/06/2013CN103382546A A method for depositing crystalline titania nanoparticles and films
11/06/2013CN103382536A Fourth-generation single-crystal high temperature alloy with high strength and stable structure and preparation method thereof
11/06/2013CN103382210A Structure of isopolyoxovanadate hybrid compound and preparation method of isopolyoxovanadate hybrid compound
11/06/2013CN102525050B Moissanite gem with bright carving surface and cutting and grinding processing methods thereof
11/06/2013CN102392303B Method for preparing basic magnesium chloride whisker from light-burnt powder with one-step process
11/06/2013CN102351184B Method for recovering silicon carbide, high-purity silicon and dispersion liquid from silicon material linear cutting waste mortar
11/06/2013CN102268735B Method for improving crystal form stability of 4H-SiC single crystal
11/06/2013CN102051674B Monocrystal ingot manufacturing device
11/06/2013CN101768777B Silicon wafer and method of manufacturing the same
11/06/2013CN101371381B A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
11/06/2013CN101286728B Energy exchanging device for magnetoelectric resonance
11/04/2013CA2815182A1 Current supply arrangement with a first and a second current supply device, wherein the second current supply device is connected to the first current supply device
10/2013
10/31/2013WO2013162145A1 Method of growing ingot and ingot
10/31/2013WO2013161999A1 Holding body, crystal growing method, and crystal growing apparatus
10/31/2013WO2013161683A1 Phosphor, method for manufacturing same, and light-emitting device
10/31/2013WO2013161591A1 SiC SINGLE CRYSTAL SUBSTRATE
10/31/2013WO2013161227A1 Metal fluoride crystal, light emitting element, scintillator, method for detecting neutrons, and method for producing metal fluoride crystal
10/31/2013WO2013161049A1 SiC SINGLE CRYSTAL SUBSTRATE
10/31/2013WO2013161022A1 Method for forming silicon nitride semiconductor thin film and silicon nitride semiconductor substrate
10/31/2013WO2013160664A1 Methods for applying graphene coatings and substrates with such coatings
10/31/2013WO2013159808A1 METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL
10/31/2013WO2013115711A3 Silicon carbide crystal growth in a cvd reactor using chlorinated chemistry
10/31/2013WO2013114313A3 Crucible for solidifying a silicon ingot, and production method therefor
10/31/2013DE102012103686A1 Epitaxiesubstrat, Verfahren zur Herstellung eines Epitaxiesubstrats und optoelektronischer Halbleiterchip mit einem Epitaxiesubstrat Epitaxial substrate, methods of manufacturing an epitaxial substrate and opto-electronic semiconductor chip having an epitaxial substrate
10/30/2013EP2657989A1 Light emission apparatus and manufacturing method thereof
10/30/2013EP2657378A1 METHOD AND DEVICE FOR MANUFACTURING SELF-SUPPORTING GALLIUM NITRIDE (GaN) SUBSTRATE
10/30/2013EP2657377A1 Feed material for epitaxial growth of monocrystalline silicon carbide, and method for epitaxial growth of monocrystalline silicon carbide
10/30/2013EP2657376A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
10/30/2013EP2657375A1 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
10/30/2013EP2657374A1 Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
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