Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
09/2014
09/12/2014WO2014135211A1 Sapphire structure having a plurality of crystal planes
09/11/2014US20140255705 Growth of Crystalline Materials on Two-Dimensional Inert Materials
09/11/2014US20140255704 Transparent composite pane for safety applications
09/11/2014US20140252304 Phase-change memory and semiconductor recording/reproducing device
09/11/2014DE112012004206T5 Verfahren zum Herstellen eines Einkristalls A method of manufacturing a single crystal
09/10/2014EP2775015A1 SiC SINGLE CRYSTAL MANUFACTURING METHOD
09/10/2014EP2773797A1 Crucible and method for the production of a (near) monocrystalline semiconductor ingot
09/09/2014US8829658 Method of manufacturing nitride substrate, and nitride substrate
09/09/2014US8829530 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
09/09/2014US8828849 Production of single-crystal semiconductor material using a nanostructure template
09/04/2014WO2014072829A3 Nanometer sized structures grown by pulsed laser deposition
09/03/2014EP2772570A1 Method for producing nitride crystal, and nitride crystal
09/03/2014EP2772565A2 Sapphire property modification through ion implantation
09/02/2014US8823056 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
09/02/2014US8823016 Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer
09/02/2014US8822746 Ordered cobalt-aluminum and iron-aluminum intermetallic compounds as hydrogenation catalysts
09/02/2014US8821636 Single-crystal manufacturing apparatus
09/02/2014US8821635 Method for growing Si-Ge semiconductor materials and devices on substrates
09/02/2014US8821634 High temperature furnace insulation
08/2014
08/28/2014WO2014130108A1 Vanadium doped sic single crystals and method thereof
08/28/2014WO2014129137A1 Sic single crystal, sic wafer, sic substrate, and sic device
08/28/2014US20140239452 Substrate for epitaxial growth, and crystal laminate structure
08/28/2014DE112012003652T5 Verfahren zur Herstellung eines Siliziumkristalls A process for producing a silicon crystal
08/27/2014EP2770089A1 Method for producing nitride semiconductor crystal of group 13 metal of periodic table, and nitride semiconductor crystal of group 13 metal of periodic table produced by said production method
08/27/2014EP2769006A2 Ordered stacked sheets of layered inorganic compounds, nanostructures comprising them, processes for their preparation and uses thereof
08/26/2014US8815710 Silicon epitaxial wafer and method for production thereof
08/26/2014US8815708 Method for improving the quality of a SiC crystal
08/26/2014US8815403 Silica container and method for producing the same
08/26/2014US8815119 Chloride, bromide and iodide scintillators with europium doping
08/26/2014US8815011 Magnetic garnet single crystal and optical element using same as well as method of producing single crystal
08/26/2014US8815010 InP single crystal wafer and method for producing InP single crystal
08/21/2014WO2014125092A1 P-doping of group-iii-nitride buffer layer structure on a heterosubstrate
08/21/2014US20140234194 Vanadium Doped SiC Single Crystals and Method Thereof
08/21/2014US20140231826 Methods of Growing a Silicon Carbide Epitaxial Layer on a Substrate to Increase and Control Carrier Lifetime
08/21/2014DE112012005019T5 SiC-Einkristall, SiC-Wafer und Halbleitervorrichtung SiC single crystal wafer and SiC semiconductor device
08/21/2014DE112012004967T5 Vorrichtung und Verfahren zur Züchtung von Ingots Apparatus and method for the production of ingots
08/21/2014DE112012004966T5 Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung A process for producing a silicon carbide semiconductor device
08/21/2014DE102013002637A1 Verfahren zur Herstellung eines Galliumarsenidsubstrats, Galliumarsenidsubstrat und Verwendung desselben The same process for the preparation of a gallium arsenide substrate, gallium arsenide substrate and using
08/20/2014EP2768013A1 Crystal layered structure and method for manufacturing same, and semiconductor element
08/20/2014EP2767621A1 Methof for producing b-ga2o3 substrate and method for producing crystal laminate structure
08/20/2014EP2767620A1 P-doping of group-III-nitride buffer layer structure on a heterosubstrate
08/19/2014US8809724 Strategically placed large grains in superalloy casting to improve weldability
08/19/2014US8808560 Method for producing single-crystal diamond movable structure
08/19/2014US8808452 Silicon film formation apparatus and method for using same
08/14/2014WO2014123636A1 Sic crystal with low dislocation density
08/14/2014WO2014123635A1 Sic crystal and wafer cut from crystal with low dislocation density
08/14/2014WO2014123634A1 Method to reduce dislocations in sic crystal grown by sublimation (pvt)
08/13/2014EP2765226A1 Gan film manufacturing method and composite substrate used in same
08/13/2014CN203768489U 一种湿法腐蚀碳化硅晶片的装置 One kind of wet etching of silicon carbide wafer device
08/13/2014CN203768488U 减少碲镉汞液相外延材料表面粘液的生长装置 Reducing the growth of HgCdTe LPE device surface mucus
08/13/2014CN203768487U 碲化锌晶体空间生长用石英安瓿 Zinc telluride crystal quartz ampoule space growth
08/13/2014CN203768484U 一种用于浸渍式碲镉汞液相外延的温度控制装置 An immersion HgCdTe LPE temperature control device for
08/13/2014CN203768483U 用于浸渍式碲镉汞液相外延的样品架 Dip for HgCdTe LPE sample holder
08/13/2014CN203768482U 一种新型真空电子束熔炼炉 A new vacuum electron beam melting furnace
08/13/2014CN103988321A 制造具有平坦表面的三维氮化镓结构的方法和使用具有平坦表面的三维氮化镓（GaN）柱状物结构的发光二极管（LED） The method of manufacturing a flat surface and having a three-dimensional structure having a flat surface GaN dimensional gallium nitride (GaN) light-emitting diode structure of pillars (LED)
08/13/2014CN103988081A 金属/二氧化硅芯/壳纳米颗粒、制造工艺以及包括该纳米颗粒的免疫层析测试装置 Metal / silica core / shell nanoparticles, and the manufacturing process of the immunochromatographic test device comprising nanoparticles
08/13/2014CN103987881A 用于生产结晶半导体锭的坩埚及其制造方法 Production of a crystalline semiconductor ingot and crucible method for manufacturing
08/13/2014CN103985836A 一种在镍纳米针锥阵列上制备锗负极材料的方法 A method of preparing a negative electrode material on germanium nanoneedle nickel cone array methods
08/13/2014CN103981574A Pr<sup>3+</sup>离子掺杂的钙镁锆钆镓石榴石及其熔体法晶体生长方法 Pr <sup> 3 + </ sup>, calcium and magnesium, zirconium and melt gadolinium gallium garnet crystal growth method using an ion doping
08/13/2014CN103981573A 提高钙钛矿结构铁电材料居里温度的方法 Improve the perovskite structure ferroelectric material Curie temperature method
08/13/2014CN103981572A 一种片状纳米氧化锌的生长方法 A sheet-like nano-ZnO growth method
08/13/2014CN103981571A 一种检测多晶铸锭炉设备气密性的方法 A polycrystalline ingot furnace airtight device detection method
08/13/2014CN103981570A 一种多晶硅铸锭炉硅液溢流报警结构 One kind of polycrystalline silicon ingot furnace silicon liquid overflow alarm structure
08/13/2014CN103981569A 一种解决铸造晶体硅长晶阴影缺陷的方法 A solution to the long-crystalline silicon crystal shadow casting defects
08/13/2014CN103981568A 形成含碳外延硅层的方法 The method of forming a carbon-containing silicon epitaxial layer
08/13/2014CN103981566A 一种椭球型光子晶体的自组装制备方法 Self-assembly method for preparing a photonic crystal ellipsoid
08/13/2014CN103014625B 制备四方相室温多铁性材料BiFeO3的方法 Preparation of tetragonal phase at room temperature multiferroic material BiFeO3 methods
08/13/2014CN103008652B 镁粉表面原位生长制备氧化镁晶须/镁复合粉末的方法 The method of preparation of magnesium hydroxide surface-situ growth of whiskers / magnesium composite powder
08/13/2014CN102747404B 一种具有光催化功能的复合薄膜及其制备方法 Composite film and preparation method with photocatalytic function
08/13/2014CN102618925B 一种氧化亚铜纳米八面体材料的制备方法 A method for preparing nano-octahedral cuprous oxide material
08/13/2014CN102554261B 铟类纳米线、氧化物纳米线与导电性氧化物纳米线以及它们的制造方法 Indium nanowires oxide nanowires and the conductive oxide nanowires, and the manufacturing method thereof
08/13/2014CN102443848B 一种提高硫化铋多晶热电性能的方法 A way to improve the thermoelectric properties of polycrystalline bismuth sulfide method
08/13/2014CN101862908B 工件分离方法和设备 Method and apparatus for separating a workpiece
08/13/2014CN101573480B 氮化物半导体自立基板及其制造方法 The nitride semiconductor self-supporting substrate and a manufacturing method
08/12/2014US8803160 Lightly doped silicon carbide wafer and use thereof in high power devices
08/12/2014CA2765901C Diamond material
08/07/2014WO2014118630A1 Cover flux and method for silicon purification
08/07/2014US20140220340 Branched Nanowires and Method of Fabrication
08/07/2014US20140220325 Method to reduce dislocations in sic crystal growth
08/07/2014US20140220301 Epitaxial substrate having nano-rugged surface and fabrication thereof
08/07/2014US20140220299 Single-crystal silicon-carbide substrate and polishing solution
08/07/2014US20140220298 Sic crystal with low dislocation density
08/07/2014US20140220296 Sic crystal and wafer cut from crystal with low dislocation density
08/07/2014US20140219907 Single-crystal diamond and manufacturing method thereof
08/07/2014US20140219902 MECHANOCHEMICAL SYNTHESIS OF HEXAGONAL OsB2
08/06/2014EP2762615A2 Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device
08/06/2014CN203757102U 蓝宝石炉防爆阀 Sapphire furnace explosion-proof valve
08/06/2014CN203754854U 蓝宝石晶体热交换法生长炉氦气冷却系统 Sapphire crystal growth furnace heat exchange helium cooling system
08/06/2014CN203754852U 蓝宝石晶体炉取晶装置 Sapphire crystal furnace to take crystal device
08/06/2014CN203754851U 防热场漏硅的多晶铸锭炉 Polycrystalline ingot furnace heat-resistant silicon leakage field
08/06/2014CN203754850U 多晶硅铸锭冷却水冷却系统 Polycrystalline silicon ingot cooling water cooling system
08/06/2014CN203754849U 多晶硅铸锭恒温冷却水冷却系统 Polysilicon ingots heated water cooling system
08/06/2014CN203754848U 水平砷化镓单晶生长用籽晶腔及包括该籽晶腔的石英舟 The level of GaAs single crystal growth seed cavity and includes the seed cavity quartz boat
08/06/2014CN103975098A 氮化铝单晶基板及其制造方法 Aluminum nitride single crystal substrate and manufacturing method
08/06/2014CN103975097A 用于生产硅单晶和多晶硅锭的方法 Monocrystalline silicon and polycrystalline silicon ingot production method for
08/06/2014CN103972332A 一种p型氮化镓材料空穴激活的方法 One kind of p-type gallium nitride material of the hole active method
08/06/2014CN103966671A 一种高强度抗热腐蚀镍基单晶高温合金及制备方法 A high-strength hot corrosion of nickel-base single crystal superalloy and preparation method
08/06/2014CN103966670A 一种废硫酸处理工程与石膏晶须生产一体化的方法 An acid treatment works and plaster whisker integrated approach to waste production
08/06/2014CN103966669A 一种区熔法生长硼酸铋锌单晶的方法 One kind of zone melting bismuth zinc borate crystal growth method
08/06/2014CN103966668A 一种基于保护气氛控制棒状蓝宝石晶体直径的生长方法 Based protective atmosphere control rod sapphire crystal growth methods diameter
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