Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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03/13/2014 | DE112012002192T5 Siliziumcarbidsubstrat, Ingot aus Siliziumcarbid, und Verfahren zur Herstellung eines Siliziumcarbidsubstrats und eines Ingots aus Siliziumcarbid Silicon carbide, silicon carbide ingot, and method for producing a silicon carbide substrate and an ingot of silicon carbide |
03/12/2014 | EP2705179A1 Diamond sensors, detectors, and quantum devices |
03/12/2014 | EP2705178A2 Growth of a uniformly doped silicon ingot by doping only the initial charge |
03/12/2014 | EP2705177A2 Apparatus and method for producing a multicrystalline material having large grain sizes |
03/12/2014 | CN203474963U Chemical vapor deposition equipment for producing silicon carbide epitaxial wafer |
03/12/2014 | CN203474960U Crystal growth doper |
03/12/2014 | CN203474957U Furnace pressure detection, alarm and compensation system of single-crystal furnace |
03/12/2014 | CN203474956U Volatilizer device used for arsenic impurity heavy doping of mono-crystal furnace |
03/12/2014 | CN203474955U Volatilizer device for antimony impurity heavy doping of mono-crystal furnace |
03/12/2014 | CN203474954U Heat shielding device for improvement of monocrystal radial oxygen gradient |
03/12/2014 | CN203474953U Seedholder |
03/12/2014 | CN203474952U Quartz crucible for ingot casting |
03/12/2014 | CN103635616A Method for producing nitride single crystal and autoclave used therefor |
03/12/2014 | CN103635615A Sic single crystal, Sic wafer, and semiconductor device |
03/12/2014 | CN103635614A Vessels for molten semiconducting materials and methods of making the same |
03/12/2014 | CN103635613A Growth of a uniformly doped silicon ingot by doping only the initial charge |
03/12/2014 | CN103633216A Novel cadmium sulfide thin film and growth method for same |
03/12/2014 | CN103632754A Ultrathin aluminum-doped ZnO transparent conductive film and preparing method thereof |
03/12/2014 | CN103628142A Method for preparing phosphogypsum whiskers by secondary crystallization |
03/12/2014 | CN103628141A Method for homogenizing crystalline quality of SiC monocrystal |
03/12/2014 | CN103628140A Dual sealing structure for ultra high temperature double-layer water cooling quartz tube vacuum chamber |
03/12/2014 | CN103628139A Compound cesium phosphomolybdate, cesium phosphomolybdate nonlinear optical crystals, and preparation method and applications of compound cesium phosphomolybdate and cesium phosphomolybdate nonlinear optical crystals |
03/12/2014 | CN103628138A Large-size mass terbium calcium oxide borate crystal, and growth and application of crystal |
03/12/2014 | CN103628137A Method for preparing calcium doped REBCO (rare earth barium copper oxygen) high temperature superconductivity standard single crystal |
03/12/2014 | CN103628136A Compound lead rubidium borophosphate and non-linear optical crystal of lead rubidium borophosphate, preparation method and applications thereof |
03/12/2014 | CN103628135A Compound rubidium phosphomolybdate, rubidium phosphomolybdate nonlinear optical crystals, and preparation method and applications of compound rubidium phosphomolybdate and rubidium phosphomolybdate nonlinear optical crystals |
03/12/2014 | CN103628134A Riveting molybdenum crucible for sapphire sintering and production method |
03/12/2014 | CN103628133A Method for preparing aqueous solution of directional growth monocrystalline ZnO nano wall |
03/12/2014 | CN103628132A Polycrystalline silicon chip, polycrystalline silicon ingot and method of polycrystalline silicon ingot |
03/12/2014 | CN103628130A Cold crucible smelting device capable of realizing continuous crystal pulling |
03/12/2014 | CN103628129A Graphite heater used for Czochralski method preparation of monocrystalline silicon |
03/12/2014 | CN103628127A DSS (directional solidification system) quasi-monocrystal silicon growth furnace and growth method of quasi-monocrystal silicon |
03/12/2014 | CN103628126A Manufacturing method for monocrystalloid crystalline silica ingot and polysilicon ingot furnace |
03/12/2014 | CN103628125A Polysilicon ingot furnace and polysilicon ingot casting method |
03/12/2014 | CN103628124A Low-voltage direct-current electrolysis preparation method of calcium carbonate whisker |
03/12/2014 | CN103627924A Rare earth monocrystal environmentally-friendly brass |
03/12/2014 | CN102697662B Method for preparing hydroxyapatite whisker base function hybrid material used for dental restoration |
03/12/2014 | CN102325927B Silica glass crucible |
03/12/2014 | CN102242392B Method for producing quasi-single crystal silicon with casting method and stabilizing crystal seed at furnace bottom after melting in ingot furnace |
03/12/2014 | CN102225651B Grapheme-Sr3Ti2O7/zinc-aluminum-zirconium corrosion resistant coating for polysilicon ingot furnace |
03/12/2014 | CN102197168B Method and apparatus for manufacturing SiC single crystal film |
03/12/2014 | CN102187020B Indium phosphide substrate manufacturing method, epitaxial wafer manufacturing method, indium phosphide substrate, and epitaxial wafer |
03/12/2014 | CN102146581B Producing method of silicon semiconductor wafer with diameter of at least 450 mm and silicon semiconductor wafer with 450 mm diameter |
03/12/2014 | CN101914809B Nonlinear optical crystal of potassium borate chloride compound and preparation method as well as application thereof |
03/12/2014 | CN101728247B Monocrystalline material with carrier life self-supporting thickness and method thereof |
03/12/2014 | CN101469452B Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal |
03/06/2014 | WO2014036373A1 Reactive cover glass over molten silicon during directional solidification |
03/06/2014 | WO2014035481A1 Group iii nitride wafer and its production method |
03/06/2014 | WO2014034794A1 Solid electrolyte single crystal having perovskite structure and method for producing same |
03/06/2014 | WO2014034424A1 Method for producing sic single crystal |
03/06/2014 | WO2014034338A1 Composite substrate, method for manufacturing same, method for manufacturing functional layer formed of group 13 element nitride, and functional element |
03/06/2014 | WO2014034081A1 Crystal production device, production method for sic single crystals, and sic single crystal |
03/06/2014 | WO2014034080A1 3c-sic single crystal and production method therefor |
03/06/2014 | WO2014034028A1 Method for growing silicon single crystal |
03/06/2014 | WO2014033826A1 SiC SEMICONDUCTOR THIN FILM AND PRODUCTION METHOD THEREFOR |
03/06/2014 | WO2014033649A1 Method for depositing an aluminium nitride layer |
03/06/2014 | WO2014032465A1 METHOD FOR GROWING GaN NANOWIRE |
03/06/2014 | WO2014013305A3 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL BY USING THE PRODUCTION APPARATUS AND CRUCIBLE USED IN THE PRODUCTION APPARATUS |
03/06/2014 | WO2014004481A9 Controlled directional solidification of silicon |
03/06/2014 | WO2013182878A3 Gas injection components for deposition systems, deposition systems including such components, and related methods |
03/06/2014 | WO2011114102A8 Method for synthesising diamond |
03/06/2014 | US20140065437 Segmented metallic nanostructures, homogeneous metallic nanostructures and methods for producing same |
03/06/2014 | US20140065360 Large Area, Low-Defect Gallium-Containing Nitride Crystals, Method of Making, and Method of Use |
03/06/2014 | US20140061510 Diamond sensors, detectors, and quantum devices |
03/05/2014 | EP2703526A1 A silica container for pulling up monocrystalline silicon and method for manufacturing same |
03/05/2014 | EP2703525A1 Method for producing a silicon single crystal |
03/05/2014 | EP2702191A1 Vessels for molten semiconducting materials and methods of making the same |
03/05/2014 | CN203462174U Top cover of reaction chamber for epitaxial growth of silicon carbide |
03/05/2014 | CN203462172U Gem furnace vacuum system with explosion-proof device |
03/05/2014 | CN203462171U Hook for suspending guide cylinder |
03/05/2014 | CN203462170U Device for measuring crystal growth rod of ingot furnace |
03/05/2014 | CN203462169U Temperature-measuring fixing device with limited switchable observation window |
03/05/2014 | CN203462168U Energy-saving type kyropoulos-method sapphire crystal growth furnace thermal field structure |
03/05/2014 | CN203462166U Thread rolling wheel mechanism for high-precision limiting of single crystal furnace |
03/05/2014 | CN203462164U Seed crystal journey calibrating device for growing single crystal silicon by utilizing straight pull method |
03/05/2014 | CN203462159U Carbon fiber composite crucible |
03/05/2014 | CN203462158U Lifting and rotating driving mechanism |
03/05/2014 | CN203462157U Safe explosion-proof device for polysilicon ingot furnace |
03/05/2014 | CN103620096A Method for manufacturing group 13 element nitride crystal and solvent composition |
03/05/2014 | CN103620095A Silicon carbide single crystal wafer and manufacturing method for same |
03/05/2014 | CN103620094A Apparatus and method for producing SiC single crystal |
03/05/2014 | CN103620093A Diamond sensors, detectors, and quantum devices |
03/05/2014 | CN103614779A Method for increasing uniformity of on-chip n-type doping concentration of silicon carbide epitaxial wafer |
03/05/2014 | CN103614777A Preparation method of large-area single-layer or multi-layer molybdenum diselenide single chip |
03/05/2014 | CN103614776A Laser crystal with wavelength near 2.9 micron and preparation method thereof |
03/05/2014 | CN103614775A Method for growing REBCO (Rare Earth Barium Copper Oxygen) standard single crystal in embedded seeded growth mode |
03/05/2014 | CN103614774A Preparation method of doping raw material used for growing sapphire single crystal through pulling method or edge-defined film-fed method |
03/05/2014 | CN103614773A Welded tungsten heating cage for sapphire single crystal furnace and welding method thereof |
03/05/2014 | CN103614772A Polysilicon ingot heating method and polysilicon ingot furnace utilizing same |
03/05/2014 | CN103614771A Ingot casting capacity adjustment device of polycrystalline ingot casting furnace |
03/05/2014 | CN103614770A Novel ingot furnace and production technology using ingot furnace |
03/05/2014 | CN103614768A Conveniently-fetched flow guide cylinder of single crystal furnace |
03/05/2014 | CN103614765A Method of heating graphite to grow sapphire crystal |
03/05/2014 | CN103613811A Method for preparing reinforced chloroprene rubber by using light-burned powder alkali type magnesium salt whisker |
03/05/2014 | CN102728582B Washing method for graphite piece for growing mono-crystalline silicon by using Czochralski method |
03/05/2014 | CN102326228B III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate, and method for fabricating these |
03/05/2014 | CN102296365B Vanadium-doped lithium niobate crystal |
03/05/2014 | CN101831706B Growth method of low ultraviolet absorption YA13(BO3)4 crystal |
03/05/2014 | CN101831699B Non-linear optical crystal of iodic acid barium niobate |
03/05/2014 | CN101755066B Ultrahard diamond composites |