Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2014
12/10/2014CN102449208B SiC单晶的制造方法 The method of producing single crystal SiC
12/10/2014CN102191476B 硫掺杂石墨烯薄膜的制备方法 Preparation of doped graphene films
12/09/2014US8907546 Temperature and field stable relaxor-PT piezoelectric single crystals
12/09/2014US8906788 Method for making epitaxial structure
12/09/2014US8906786 Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same
12/09/2014US8906727 Heteroepitaxial growth using ion implantation
12/09/2014US8906487 Base material with single-crystal silicon carbide film, method of producing single-crystal silicon carbide film, and method of producing base material with single-crystal silicon carbide film
12/09/2014US8906157 Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant
12/04/2014US20140356276 Optical quality diamond material
12/04/2014US20140353684 Silicon carbide epitaxial wafer and method for fabricating the same
12/04/2014US20140353680 Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer
12/04/2014US20140352607 Raw Material for Growth of Ingot, Method for Fabricating Raw Material for Growth of Ingot and Method for Fabricating Ingot
12/04/2014US20140352606 Silica glass crucible and method for producing monocrystalline silicon using same
12/04/2014US20140352604 METHOD FOR GROWING ß-Ga2O3 SINGLE CRYSTAL
12/02/2014US8901570 Epitaxial silicon carbide single crystal substrate and process for producing the same
12/02/2014US8900979 Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
12/02/2014US8900953 Crystal manufacturing apparatus, semiconductor device manufactured using the same, and method of manufacturing semiconductor device using the same
12/02/2014US8900512 Ni-based single crystal superalloy
12/02/2014US8900481 Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
12/02/2014US8900474 Recyclable superparamagnetic nanoparticles and method for producing the same
12/02/2014US8900362 Manufacturing method of gallium oxide single crystal
12/02/2014US8898874 Method of fabricating a piezoelectric vibrating piece
11/2014
11/27/2014US20140349112 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
11/27/2014US20140345686 High-throughput continuous gas-phase synthesis of nanowires with tunable properties
11/27/2014US20140345517 Method for the formation of nano-scale on-chip optical waveguide structures
11/25/2014US8897910 Particle beam-assisted ultra-precision machining method for single-crystal brittle materials
11/25/2014US8896100 III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
11/25/2014US8896020 Method and apparatus for producing large, single-crystals of aluminum nitride
11/25/2014US8895324 Method of determining an amount of impurities that a contaminating material contributes to high purity silicon
11/20/2014US20140338590 High temperature furnace insulation
11/20/2014US20140338589 Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods
11/20/2014US20140338586 Method for producing zinc oxide single crystal
11/18/2014US8890291 Silicon wafer and manufacturing method thereof
11/18/2014US8890170 Silicon carbide substrate, semiconductor device and method for manufacturing silicon carbide substrate
11/18/2014US8890091 Diamond tools
11/18/2014US8889530 Formation of highly dislocation free compound semiconductor on a lattice mismatched substrate
11/18/2014US8889036 Scintillator crystal materials, scintillators and radiation detectors
11/18/2014US8888915 High-purity vitreous silica crucible used for pulling large-diameter single-crystal silicon ingot
11/18/2014US8888914 Process for producing layered member and layered member
11/18/2014US8888912 Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal
11/18/2014US8888911 Method of producing single crystal silicon
11/18/2014US8887650 Temperature-controlled purge gate valve for chemical vapor deposition chamber
11/13/2014US20140335339 Single crystal cvd synthetic diamond material
11/13/2014US20140335308 Sapphire substrate
11/13/2014US20140332915 Direct Graphene Growth on Metal Oxides by Molecular Epitaxy
11/13/2014US20140332850 Epitaxial Growth of Crystalline Material
11/13/2014US20140331918 Method for Growing an AIN Monocrystal and Device for Implementing Same
11/13/2014US20140331917 Silicon carbide powder, method for manufacturing the same and method for growing single crystal
11/13/2014US20140331916 ZnO STRUCTURES AND METHODS OF USE
11/13/2014US20140331915 Method of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon
11/11/2014US8884252 Diamond tools
11/11/2014US8884251 Diamond tools
11/11/2014US8883903 Synthesis, capping and dispersion of nanocrystals
11/11/2014US8882935 Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition
11/11/2014US8882911 Apparatus for manufacturing silicon carbide single crystal
11/11/2014US8882910 AlGaN substrate and production method thereof
11/11/2014US8882909 Method for producing virtual Ge substrates for III/V-integration on Si(001)
11/11/2014US8882077 Seed layers and process of manufacturing seed layers
11/11/2014US8881885 Raw material loading apparatus
11/06/2014US20140326175 Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
11/04/2014US8878345 Structural body and method for manufacturing semiconductor substrate
11/04/2014US8878322 Perovskite manganese oxide thin film and manufacturing method therefor
11/04/2014US8878259 Super lattice/quantum well nanowires
11/04/2014US8878244 Semiconductor device having strained silicon film
11/04/2014US8878230 Semi-insulating group III metal nitride and method of manufacture
11/04/2014US8876973 Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same
11/04/2014US8876972 Crystallization device
10/2014
10/28/2014US8873596 Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal
10/28/2014US8872307 P-type silicon single crystal and method of manufacturing the same
10/28/2014US8872189 Substrate, semiconductor device, and method of manufacturing the same
10/28/2014US8872016 Thermoelectric conversion structure and method of manufacturing same
10/28/2014US8871647 Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate
10/28/2014US8871364 Perovskite manganese oxide thin film
10/28/2014US8871182 3D nanocrystals and manufacturing methods
10/28/2014US8871169 Methods and apparatuses for manufacturing cast silicon from seed crystals
10/28/2014US8871025 SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
10/28/2014US8871024 High pressure apparatus and method for nitride crystal growth
10/28/2014US8871023 Silicon single crystal pull-up apparatus and method of manufacturing silicon single crystal
10/28/2014US8871022 Systems and methods for preparation of epitaxially textured thick films
10/28/2014US8870975 Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
10/21/2014US8866367 Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making
10/21/2014US8865324 Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution
10/21/2014US8865105 Graphene and its growth
10/21/2014US8865027 Nanowires-based transparent conductors
10/21/2014US8864907 Silicon substrate and manufacturing method of the same
10/21/2014US8864906 Method for producing silicon wafer
10/21/2014US8864871 Method for manufacturing copper nanoparticles using microwaves
10/21/2014US8864481 Mold for casting polycrystalline silicon ingot, and silicon nitride powder for mold release material thereof, slurry containing silicon nitride powder for mold release layer thereof and mold release material for casting thereof
10/16/2014US20140305369 Method of Producing Crystals of Nitrides of Group 13 Elements and Melt Compositions
10/14/2014US8860041 Method for producing nanowires using a porous template
10/14/2014US8859446 α alumina sintered body for production of sapphire single crystal
10/14/2014US8859401 Method for growing a nitride-based III-V group compound semiconductor
10/14/2014US8859042 Methods for heating with lamps
10/14/2014US8858908 Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate
10/14/2014US8858713 Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus
10/14/2014US8858707 Synthesis of silicon nanorods
10/14/2014US8858706 Single-crystal manufacturing apparatus and single-crystal manufacturing method
10/09/2014WO2014164953A1 Controllable reductive method for synthesizing metal-containing particles
10/09/2014WO2014163056A1 METHOD FOR GROWING β-Ga2O3-BASED SINGLE CRYSTAL
10/09/2014WO2014162657A1 Method for manufacturing semiconductor wafer and cutting positioning system for semiconductor ingot
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